Si4835DDY

www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SO-8 Single FEATURES
D • TrenchFET® power MOSFET
D 5
D 6 • 100 % Rg and UIS tested
D 7
8
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available

4 APPLICATIONS S
3 G
2 S • Load switches
1 S - Notebook PCs
S - Desktop PCs
Top View
G
PRODUCT SUMMARY
VDS (V) -30
RDS(on) max. () at VGS = -10 V 0.018
RDS(on) max. () at VGS = -4.5 V 0.030
D
Qg typ. (nC) 22
ID (A) d -13 P-Channel MOSFET
Configuration Single

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si4835DDY-T1-E3
Lead (Pb)-free and halogen-free Si4835DDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30
V
Gate-source voltage VGS ±25
TC = 25 °C -13
TC = 70 °C -10.5
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C -8.7 a, b
TA = 70 °C -7.7 a, b
A
Pulsed drain current IDM -50
TC = 25 °C -4.6
Continuous source-drain diode current IS
TA = 25 °C 2 a, b
Avalanche current IAS -20
L = 0.1 mH
Single-pulse avalanche energy EAS 20 mJ
TC = 25 °C 5.6
TC = 70 °C 3.6
Maximum power dissipation PD W
TA = 25 °C 2.5 a, b
TA = 70 °C 1.6 a, b
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a, c t  10 s RthJA 39 50
°C/W
Maximum junction-to-foot Steady state RthJF 18 22
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 85 °C/W
d. Based on TC = 25 °C

S09-0136-Rev. B, 02-Feb-09 1 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si4835DDY
www.vishay.com
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - V
VDS temperature coefficient VDS/TJ - -31 -
ID = -250 μA mV/°C
VGS(th) temperature coefficient VGS(th)/TJ - 5.5 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 25 V - - ± 100 nA
VDS = -30 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS μA
VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -5
On-state drain current a ID(on) VDS  -10 V, VGS = -10 V -30 - - A
VGS = -10 V, ID = -10 A - 0.0140 0.0180
Drain-source on-state resistance a RDS(on) 
VGS = -4.5 V, ID = -7 A - 0.0245 0.0300
Forward transconductance a gfs VDS = -10 V, ID = -10 A - 23 - S
Dynamic b
Input capacitance Ciss - 1960 -
Output capacitance Coss VDS = -15 V, VGS = 0 V, f = 1 MHz - 380 - pF
Reverse transfer capacitance Crss - 325 -
VDS = -15 V, VGS = -10 V, ID = -10 A - 43 65
Total gate charge Qg
- 22 33
nC
Gate-source charge Qgs VDS = -15 V, VGS = -4.5 V, ID = -10 A - 6 -
Gate-drain charge Qgd - 11 -
Gate resistance Rg f = 1 MHz 0.3 1.3 2.5 
Turn-on delay time td(on) - 11 22
Rise time tr VDD = -15 V, RL = 3  - 13 25
Turn-off delay time td(off) ID  -5 A, VGEN = -10 V, Rg = 1  - 32 50
Fall time tf - 9 18
ns
Turn-on delay time td(on) - 44 70
Rise time tr VDD = -15 V, RL = 3  - 100 160
Turn-off delay time td(off) ID  -5 A, VGEN = -4.5 V, Rg = 1  - 28 50
Fall time tf - 15 30
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -4.6
A
Pulse diode forward current ISM - - -50
Body diode voltage VSD IS = -2 A, VGS = 0 V - -0.75 -1.2 V
Body diode reverse recovery time trr - 28 45 ns
Body diode reverse recovery charge Qrr IF = -2 A, di/dt = 100 A/μs, - 20 40 nC
Reverse recovery fall time ta TJ = 25 °C - 13 -
ns
Reverse recovery rise time tb - 15 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing






Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S09-0136-Rev. B, 02-Feb-09 2 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si4835DDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

60 5
VGS = 10 V thru 5 V
50
4
I D - Drain Current (A)

I D - Drain Current (A)

40
3
30 VGS = 4 V

2
20
VGS = 125 °C

1
10
VGS = 3 V VGS = 25 °C
VGS = - 55 °C
0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.05 3000

0.04 2400
R DS(on) - On-Resistance (Ω)

Ciss
C - Capacitance (pF)

0.03 VGS = 4.5 V 1800

0.02 1200
VGS = 10 V

0.01 600 Coss

Crss

0.00 0
0 10 20 30 40 50 60 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6

ID = 10 A VDS = 10 V
ID = 10 A VGS = - 10 V
VGS - Gate-to-Source Voltage (V)

8 1.4
VDS = 15 V
R DS(on) - On-Resistance
(Normalized)

6 VDS = 20 V 1.2
VGS = - 4.5 V

4 1.0

2 0.8

0 0.6
0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

S09-0136-Rev. B, 02-Feb-09 3 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si4835DDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 0.10

ID = 10 A
TJ = 150 °C
10 0.08

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 25 °C
1 0.06

0.1 0.04
TJ = 125 °C

0.01 0.02

TJ = 25 °C
0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.8 50

0.6 ID = 5 mA
40
VGS(th) Variance (V)

0.4
30
Power (W)

0.2 ID = 250 µA
20
0.0

10
- 0.2

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by R DS(on)*

10
I D - Drain Current (A)

1 ms

10 ms
1

100 ms

1s
0.1 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified

Safe Operating Area

S09-0136-Rev. B, 02-Feb-09 4 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si4835DDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

15

12

I D - Drain Current (A)

9

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating a

7.0 2.0

5.6 1.6
Power Dissipation (W)

Power Dissipation (W)

4.2 1.2

2.8 0.8

1.4 0.4

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Foot Power Derating, Junction-to-Ambient

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

S09-0136-Rev. B, 02-Feb-09 5 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si4835DDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot





















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69953.

S09-0136-Rev. B, 02-Feb-09 6 Document Number: 69953

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019 1 Document Number: 91000