Swapna Sarker

Roll No:194571
Project Topic: Reliability analysis & modeling of BJT.
Abstract
Reliability is a concern in every semiconductor device. The Commercial
success of a semiconductor device supplier rests largely on his ability to
develop a robust manufacturing process that consistently produces
reliable devices combined with the quantitative assurance he can
provide to his customers proving the reliability of his devices. Various
reliability effects can happen under circuit operating conditions where
one particular effect usually dominates over the others in certain
operating regions. They include HCI (Hot-Carrier Instability), NBTI
(Negative Bias Temperature Instability), PBTI (Positive Bias
Temperature Instability) and NCS (Non-conductive stress). The most
important phenomena are HCI and NBTI since they are two major
contributors to the device degradation in advanced technologies. In this
project, the hypothesis is the higher temperature, the more active the
BJT. However, after a certain temperature, the BJT would fail. Besides,
the higher frequency, the BJT performance would be affected. Then, the
higher voltage (or current), the easier the BJT would fail. In this project,
I’ll discuss the temperature effect on BJT and model it by using TCAD.

Procedure
1. To build a simple BJT test circuit
2. To analysis the current gain of a BJT at various temperatures
3. Model it by using TCAD

Summary
The main purpose of this project is to build a simple circuit with bipolar
junction transistor (BJT) and test the reliability and failure analysis of the
BJT component at various temperatures & model it.