Nickel related optical centres in diamond created by ion implantation

Citation:
Orwa, J.O., Aharonovich, I., Jelezko, F., Balasubramanian, G., Balog, P., Markham, M.,
Twitchen, D.J., Greentree, A.D. and Prawer, S. 2010, Nickel related optical centres in
diamond created by ion implantation, Journal of applied physics, vol. 107, no. 9, 093512,
pp. 1-5.

DOI: http://www.dx.doi.org/10.1063/1.3357374

© 2010, American Institute of Physics

Reproduced with permission.

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 JOURNAL OF APPLIED PHYSICS 107, 093512 共2010兲

Nickel related optical centres in diamond created by ion implantation

J. O. Orwa,1,a兲 I. Aharonovich,1 F. Jelezko,2 G. Balasubramanian,2 P. Balog,3
M. Markham,4 D. J. Twitchen,4 A. D. Greentree,1 and S. Prawer1
1
Microanalytical Research Centre, School of Physics, University of Melbourne, Parkville,
Victoria 3010, Australia
2
Physikalisches Institut, Universitat Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
3
Element Six Ltd., Isle of Man, IM99 6AQ British Isles, United Kingdom
4
Element Six Ltd., King’s Ride Park, Ascot SL5 8BP, United Kingdom
共Received 16 January 2010; accepted 9 February 2010; published online 4 May 2010兲
Ni-related optical centres in diamond are promising as alternatives to the nitrogen vacancy 共NV兲
centre for quantum applications and biomarking. In order to achieve the reliability and
reproducibility required, a method for producing the Ni-related centres in a controllable manner
needs to be established. In this study, we have attempted this control by implanting high purity CVD
diamond samples with Ni and N followed by thermal annealing. Samples implanted with Ni show
a new Ni-related PL peak centered at 711 nm and a well known doublet at 883/885 nm along with
weak NV luminescence. The optical properties of the two Ni-related defects are investigated. In
particular, an excited state lifetime of the 883/885 nm peak is measured to be 11.6 ns. © 2010
American Institute of Physics. 关doi:10.1063/1.3357374兴

I. INTRODUCTION single photon emission from Ni related color centres in type

The unique mechanical, electrical and optical properties
of diamond have made it the subject of many theoretical and
experimental investigations over the past few decades.1–3
More recently there has been a rapid increase in the study of
optical centres in diamond4–6 due to their promising applica-
tions in quantum information science 共QIS兲.7 Although one
long term aim of QIS is the production of a practical and
scalable quantum computer, optical centres in diamond are
rapidly finding use in other areas such as quantum key dis-
tribution 共QKD兲,8 magnetometry9–12 and biomarking.13–15
Each of these application areas has specific requirements
which must be addressed individually. In particular QKD
requires stable, bright, and narrow width single photon emit-
ters in the near infrared, to ensure daylight operation and
minimal dispersion in fiber optics.16
Initial work in the fields of QIS focused primarily on the
nitrogen vacancy 共NV兲 centre, which consists of the NVo and
NV− with zero phonon lines at 575 nm and 637 nm, respec-
tively. A drawback for using the NV− is that, at room tem-
perature, its intensity is dominated by a large phonon side
band that spread the emission over ⬃100 nm, resulting in a
Debye–Waller factor of less than 5%, which is not ideal for
QKD applications.17
Ni-related optical centres have been identified as alter-
natives to the NV, especially for QKD applications because
of their narrow width emission in the near infrared and
typical short lifetime of ⬃3 ns. In particular, the focus has
been on the NE8 centre,18 which has a zero phonon line at
⬃800 nm and consists of a nickel atom surrounded by four
nitrogen atoms in a diamond lattice. This centre is known to
be present in high pressure high temperature 共HPHT兲 dia-
mond grown with Ni as a catalyst. Recent observation of
a兲
Author to whom correspondence should be addressed. Electronic mail:
jorwa@unimelb.edu.au.
IIa diamond19 and chemical vapor deposition 共CVD兲
diamond20,21 has led to a resurgence of interest in Ni related
centres.
A number of schemes are available for creating Ni-
related optical centres in diamond, among them incorpora-
tion of Ni during CVD growth22 and by ion implantation. Of
these, ion implantation promises the best control over the
location, density and proximity to the surface of the optical
centre. To date, however, very little work has been done
involving ion implantation of Ni in diamond. Most of the
studies characterizing Ni defects have been based on syn-
thetic diamonds grown from Ni catalyst.23–27 The only re-
corded previous attempt was based on the work by Gippius28
in 1983 in which Ni ions of up to 350 keV were implanted
into synthetic and natural diamonds. Subsequent cathodolu-
minescence spectroscopy revealed several lines, among them
the 883/885 nm doublet and the two NV peaks, but not the
NE8 peak. In addition, all the previously reported studies
were performed on diamonds containing a high concentra-
tion of nitrogen,24 which made control over the properties of
the optical centres difficult.
The focus of our research is, therefore, to explore the
possibility of creating Ni-related optical centres in a control-
lable manner by ion implantation of Ni into high purity
single crystal CVD grown diamonds. Co-implantation of Ni
and N was also performed in order to study the effect of
nitrogen on the formation of the Ni related centres.
II. EXPERIMENTAL
The low nitrogen containing 共⬍5 ppb N content兲 single
crystal diamond samples were grown using chemical vapor
deposition. The residual N content was measured by using
ensemble electron paramagnetic resonance 共EPR兲.29 Each
main face had a scaif prepared 兵100其 orientation with laser
cut 具110典 edges. Using an Al mask with a 1 mm diameter

0021-8979/2010/107共9兲/093512/5/$30.00 107, 093512-1 © 2010 American Institute of Physics

093512-2 Orwa et al.
" "
76 6/01
7 6/01
./01 +234! 506(1-
# $
%&'() +,-
FIG. 1. SRIM prediction of 40 keV Ni and 14 keV N ion profiles in dia-
mond showing a projected ion range of ⬃195⫾ 44 Å
hole, different regions of one main face of the slab were
implanted at room temperature to fluences of 1 ⫻ 1011, 1
⫻ 1012, 1 ⫻ 1013, and 1 ⫻ 1015 cm−2 with 40 keV Ni, result-
ing in a projected ion range of 195⫾ 44 Å. The opposite
face was co-implanted with Ni and N in a ratio of 1:4, with
the Ni doses and energy being identical to those on the Ni
only implanted opposite side. The energy of the N atoms was
14 keV, chosen to ensure that the concentration profiles of
the two ions coincided as closely as possible at the end of
range as shown in Fig. 1. The purpose of the coimplantation
of Ni and N was to study possible formation of the NE8
centre by ion implantation.
The sample was then annealed in forming gas 共4% H2
in Ar兲 at 800, 900, and 1000 ° C for 1 h. Further annealing
was carried out at 1100 and 1400 ° C in vacuum for 1 h and
at 2000 ° C for 2 h under a pressure of 8 GPa in a belt press.
In between each annealing step, full photoluminescence 共PL兲
characterization at 80 K using a 514.5 nm excitation laser
was performed.
Confocal microscopy on the samples following anneal-
ing at 1100 ° C allowed determination of the brightness and
lifetime of the optical centres. Confocal images for the 883/
885 nm centre were obtained using a Ti-Sapphire laser tuned
to 710 nm together with an 880–890 nm band pass filter.
This excitation wavelength regime ensured no contribution
from the NV PL. A femtosecond pulse laser operating at 670
nm was used for lifetime measurements. The resolution of
lifetime measurements was limited by jitter of detectors 共500
ps兲
III. RESULTS AND DISCUSSION
Figure 2 shows representative PL spectra obtained
following annealing at 1000 ° C in forming gas for
an unimplanted diamond sample, a sample implanted
with 1 ⫻ 1013 Ni/ cm2 and another coimplanted with 1
⫻ 1013 Ni/ cm2 : 4 ⫻ 1013 N / cm2. The spectra were normal-
ized with respect to the diamond Raman line at 552 nm.
Except for the diamond Raman line, the unimplanted sample
shows no other spectral features in the range 530–900 nm.
For the sample implanted with Ni only, prominent peaks are
observed at 711, 738 and 883/885 nm with smaller peaks at
575 and 637 nm. The peaks at 575 and 637 nm are the zero
J. Appl. Phys. 107, 093512 共2010兲
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!+!= 58
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FIG. 2. Typical spectra obtained at 80 K from 1 ⫻ 1013 Ni/ cm2 and 1
⫻ 1013 Ni/ cm2 : 4 ⫻ 1013 Ni/ cm2 implanted diamond samples using the
514.5 nm line of an argon-ion laser following annealing at 1000 ° C in
forming gas. Each spectrum was normalized with respect to the diamond
Raman line at 552 nm.
phonon lines of the NVo and NV− optical centres, respec-
tively. The presence of weak NV peaks in the Ni only im-
planted sample suggests that a residual concentration of na-
tive nitrogen was present in the sample, consistent with the
low N content of the samples. The peak at 738 nm is due to
the Si-V, which shows that the starting material contained
some low level of Si.
The PL doublet at 883/885 nm is associated with a Ni
defect. Based on EPR experiments, several possible struc-
tures for the centre have been proposed including interstitial
Ni+ with an associated vacancy,30 interstitial Ni+ with a pos-
sible nearby B− 共Ref. 31兲 and more recently photoESR stud-
ies have shown that this centre is an interstitial Ni+ at the
centre of a divacancy.25 Unlike in HPHT diamond where Ni
is commonly used as a catalyst, we do not expect the high
purity CVD diamond samples in this study to contain any
native Ni, as proved by the absence of any Ni related peaks
in the PL for the unimplanted sample shown in Fig. 2. In
addition, it was previously believed that this centre is only
formed in the 兵111其 growth sectors, in contrast to the 兵100其
single sectored CVD samples of this study. The fact that this
centre can be produced on implantation into the CVD dia-
mond clearly indicates that its formation is not exclusive to
兵111其 growth sectors.
In addition, in the Ni only implanted sample, a new line
at 711 nm is observed. That this line was found to be pre-
dominant in the Ni only implanted sample compared to the
sample coimplanted with Ni and N suggests that the 711 nm
peak is related to the presence of Ni and not N. This is
discussed in more detail in subsequent paragraphs.
The spectrum for the sample co-implanted with Ni and
N shows strong peaks at 575 and 637, a very weak peak at
883/885 nm and no peaks at 711 and 738 nm. The higher
intensity of the two NV peaks in this sample can partly be
accounted for by the coimplantation of Ni and N which gen-
erates more vacancies. Further, the additional N atoms intro-
duced by the implantation provide a larger pool of N which
combine with the vacancies, resulting in the increased NV
intensities observed.
There are two possible explanations for the observed de-
093512-3 Orwa et al. J. Appl. Phys. 107, 093512 共2010兲

!#$
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+',
A8)36-:

5673),89+: 8-/+-;8/<
B)3)-

!# '## -3
5?6 5?
>
=8>?

! "
%"% &"% '"% $"%
()*+,+-./0 2-34
/"# %&
'%# !"# %&
+-, FIG. 4. High purity CVD diamond sample implanted with Ni to a fluence of
1 ⫻ 1015 cm−2 and annealed in vacuum at 1400 ° C showing a strong peak at
()*+),-*. 0123% 4)-*,5

'%"
883/885 nm but no peak at 711 nm.
&%#

&%"
corresponding diamond Raman intensity at 552 nm. As
'#
'(') +,-.&
'*
/
/
shown in Fig. 3共c兲, the intensity of the two peaks increases
'(') +,-.&
"%# '/
'(') +,-.&
/
linearly with Ni fluence, suggesting that only one Ni atom is
'' /
'(') +,-.&
"%" 0%,&123%456
involved as suggested in Ref. 31 for the 883/885 nm centre.
!" !# " # $" $# In a recent study, a similar linear increase in intensity with
617+8+)9*: 0);5
fluence was observed for a Xe related optical centre in dia-
&"
!"" #$ %&'(
mond and was attributed to the presence of one Xe atom.32
))* #$ %&'( To further characterize the 711 and 883/884 nm centres,
>?2;18-@+A BC -)*+),-*.

the sample was subjected to 1400 ° C anneal. Spectra taken

& +., after annealing at 1400 ° C are presented in Fig. 4 for the Ni
only implanted sample and show presence of the 883/885 nm
"%& peak but no trace of the 711 nm peak, indicating that the
defect centres associated with the latter peak become un-
stable at temperatures between 1100 and 1400 ° C.
"%"&
&"
&"
&"
&'
&"
&<
&"
&= Ensemble intensity saturation curves for the 711 and
F'
D84+)E+ 0E; 5 883/885 nm peaks obtained by 514.5 nm laser excitation at
80 K are shown in Figs. 5共a兲 and 5共b兲, respectively. By fitting
FIG. 3. 关共a兲 and 共b兲兴 Normalized fluence dependence of 711 and 883/885 nm the data points with a function of the form
PL obtained after annealing at 1000 ° C for Ni only implanted diamond. The
spectra have been vertically shifted for clarity. 共c兲—Variation in intensity of
the 711 and 883/885 nm peaks with Ni ion implantation fluence. The inten- I0 P
sities have been normalized with respect to the diamond Raman line.
I= ,
Psat + P

where I is the intensity and Psat is the saturation power, a

crease in the intensity of the 711 and 738 nm peaks on the saturation power of ⬃0.7 mW for the 711 nm peak and 12.6
one hand and an increase in that of the NV peaks. First, since mW for the 883/885 nm peak were obtained.
both the 711 and 738 nm peaks are located within the phonon Figures 6共a兲 and 6共b兲 show confocal map and spectrum
wing of the NV, a dominating NV presence could easily for the 883/885 nm peak in the sample implanted with Ni
mask the two peaks. In the case of the Si-V, a second and only to a fluence of 1 ⫻ 1015 cm−2. In spite of the high dose,
more plausible scenario is that the large presence of the NV
consumes most of the available vacancies so that only small
amounts, if at all, are available to create the Si-V. This latter
account could also explain the low intensity of the 883/885
nm peak in these samples, which would support vacancy
related models for the 883/885 nm peak. It is also generally
believed that the 737 nm peak represents Si-V in the negative
charge state. Thus as more of the N is used up in making
NV−, there is less N available to donate an electron to make
the Si-V into the negative charge state, which could explain
the decrease in the intensity of the Si-V and the 711 nm peak
in the samples co-implanted with Ni and N.
Normalized dose dependence of the 711 and 883/885 nm
FIG. 5. 共Color online兲 Integrated PL intensity of the 711 and 883/885 nm
peak intensities are shown in Figs. 3共a兲 and 3共b兲 for Ni only
peaks as a function of 514.5 nm laser excitation power for spectra collected
implanted sample, following annealing at 1000 ° C. The nor- at 80 K,—共a兲 and 共b兲, showing saturation at 0.7 mW and 12 mW for the 711
malization was achieved by dividing each spectrum by the and 883/885 nm peaks, respectively.
093512-4 Orwa et al.
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!"# 7(8$-9:'(&*;
#$%&'()* , -.
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00"100024
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!%#
FIG. 6. 共Color online兲 共a兲—Room temperature confocal spectrum of the 1
⫻ 1015 cm−2 Ni implanted diamond. The implanted region was defined by
using a 1 mm diameter Al mask. The spectrum in 共b兲 was obtained from the
implanted region of 共a兲 and represents the 883/885 nm peak. 共c兲—decay of
883/885 nm Ni-related peak following excitation with a femtosecond laser
pulse at 670 nm. A lifetime of 11.6 ns was deduced for the centre.
the count rate for the centre is very low, making it unlikely
that bright single photon sources can be obtained from this
centre.
From an optical device perspective, the lifetime of an
optical centre is one of its most important properties. In ad-
dition to determining speed with which a device can be op-
erated, the lifetime also affects the brightness. Although the
883/885 nm peak has been extensively characterized, the
lifetime of the centre has not been reported. Here, we used a
femtosecond laser source operating at 670 nm to excite the
centre at room temperature and monitor the decay rate. Fig-
ure 6共c兲 shows a direct excited state lifetime measurement of
the 883/885 nm emitter. From a single exponential fit, a life-
time of 11.6 ns is deduced, which is comparable to that of
bulk diamond NV− at room temperature.
The final annealing of the samples was done at 2000 ° C
for 2 h using a stabilizing pressure of 8 GPa in a belt press.
J. Appl. Phys. 107, 093512 共2010兲
&
3(./(4).5 678'89
1
$""" 2
1
% $$"" 2
$&"" 2
%""" 2
'()*+,-(./0
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FIG. 7. Spectra showing effect of annealing temperature on the PL spectra
of 共a兲—the 711 and 共b兲—the 883/885 nm Ni related peaks for a fluence of
1 ⫻ 1015 cm−2 Ni. The defect responsible for the 711 nm peak anneals out
between 1100 and 1400 ° C. As the annealing temperature increases, the
width of the 883/885 nm peak sharpens and becomes comparable to that of
the Sumitomo type Ib HPHT sample. The spectra in 共b兲 have been multi-
plied by various constants in order to allow for easy comparison.
As shown in Fig. 7共a兲, there is no trace of the 711 nm peak,
which was annealed out at 1400 ° C. Figure 7共b兲 shows the
dependence of the 883/885 nm peak on annealing tempera-
ture together with the peak as observed in a native, unan-
nealed type Ib Sumitomo HPHT diamond. Some of the spec-
tra were multiplied by constants and shifted vertically to
allow for easy comparison of the spectral features. At lower
annealing temperatures, each of the peaks of the 883/885 nm
doublet is broad and slightly shifted to lower wavelengths.
Annealing to higher temperatures results in a narrowing of
the linewidth and a shift to longer wavelengths. Following
annealing at 2000 ° C, the 883/885 nm peak in the Ni im-
planted sample is identical to the same peak in a representa-
tive HPHT grown Sumitomo unimplanted sample. The nar-
rowing of the linewidth with increasing annealing
temperature is an indication of increased residual damage
repair as the sample is annealed to higher temperatures.
Last we comment on the absence of the NE8 centre in
the spectra of the Ni:4N co-implanted samples. None of the
annealing procedures undertaken resulted in the formation of
this centre. Although nitrogen is believed to be mobile at
temperatures above 1400 ° C, this condition is not sufficient
to fabricate the NE8 centre. The mechanism of the NE8 for-
mation involves placement of a nitrogen atom in a neighbor-
ing lattice position to the Ni atom,24 which requires a sub-
stantial amount of energy. Additionally, the Ni atom in the
NE8 complex should occupy a specific lattice site which
093512-5 Orwa et al.
should be possible only under extreme HPHT conditions. A
detailed study of the formation of this centre will be pre-
sented elsewhere.
IV. SUMMARY
Ni implanted high purity CVD diamond samples were
investigated as a function of annealing temperature and im-
plantation dose. It was shown that Ni related centres can be
successfully created in high purity diamond. Among the cen-
tres created was the well known 883/885 nm zero phonon
line doublet which was found to have a saturation power of
12 mW and an excited state lifetime of 11.6 ns. The other
centre created was a new, previously unidentified, Ni related
centre with a zero phonon line at 711 nm and a saturation
power of 0.7 mW. The linear dependence of the intensity of
the two centres on dose suggests that each of the centres
consist of one Ni atom.
ACKNOWLEDGMENTS
This work was supported by the Australian Research
Council 共ARC兲 and the International Science Linkages Pro-
gram of the Australian Department of Innovation, Industry,
Science, and Research 共Project No. CG090191兲 and by the
European Union Sixth Framework Program under Grant No.
EQUIND IST-034368. A.D.G. is the recipient of an Austra-
lian Research Council Queen Elizabeth II Fellowship 共Grant
No. DP0880466兲. A.D.G, I.A., and S.P. acknowledge ARC
linkage grant 共Grant No. LP0775022兲. The authors are grate-
ful to Electronic Materials Engineering 共EME兲 for allowing
us the use of their ion implantation facilities and to Dr. Jeff
McCallum for helping with the ion implantation.
1
J. E. Field, The Properties of Diamond 共Academic, London, 1979兲.
2 26
I. Pankove and C. Qui, in Synthetic Diamond: Engineering CVD Science
and Technology, edited by K. E. Spear and J. P. Dismukes 共Wiley, New
York, 1994兲, pp. 401–418.
3 27
A.M. Zaitsev, Optical Properties of Diamond, 共Springer-Verlag, Berlin,
2001兲.
4 28
J. O. Orwa, A.D. Greentree, I. Aharonovich, A. D. C. Alves, J. Van
Donkelaar, A. Stacey, and S. Prawer, J. Lumin. 共in press兲.
5 29
D. A. Simpson, E. Ampem-Lassen, B. C. Gibson, S. Trpkovski, F. M.
Hossain, S. T. Huntington, A. D. Greentree, L. C. L. Hollenberg, and S.
Prawer, Appl. Phys. Lett. 94, 203107 共2009兲.
6 30
I. Aharonovich, S. Castelletto, D. Simpson, A. Stacey, J. McCallum, A. D.
Greentree, and S. Prawer, Nano Lett. 9, 3191 共2009兲.
7 32
A. D. Greentree, B. A. Fairchild, F. M. Hossain, and S. Prawer, Mater.
Today 11, 22 共2008兲.
J. Appl. Phys. 107, 093512 共2010兲
8
A. Beveratos, R. Brouri, T. Gacoin, A. Villing, J.-P. Poizat, and P.
Grangier, Phys. Rev. Lett. 89, 187901 共2002兲.
9
G. Balasubramanian, I. Y. Chan, R. Kolesov, M. Al-Hmoud, J. Tisler, C.
Shin, C. Kim, A. Wojcik, P. R. Hemmer, A. Krueger, T. Hanke, A. Le-
itenstorfer, R. Bratschitsch, F. Jelezko, and J. Wrachtrup, Nature 共London兲
455, 648 共2008兲.
10
J. R. Maze, P. L. Stanwix, J. S. Hodges, S. Hong, J. M. Taylor, P. Cap-
pellaro, L. Jiang, M. V. Gurudev Dutt, E. Togan, A. S. Zibrov, A. Yacoby,
R. L. Walsworth, and M. D. Lukin, Nature 共London兲 455, 644 共2008兲.
11
G. Balasubramanian, P. Neumann, D. Twitchen, M. Markham, R. Kolesov,
N. Mizuochi, J. Isoya, J. Achard, J. Beck, J. Tissler, V. Jacques, P. R.
Hemmer, F. Jelezko, and J. Wrachtrup, Nature Mater. 8, 383 共2009兲.
12
V. M. Acosta, E. Bauch, M. P. Ledbetter, C. Santori, K.-M. C. Fu, P. E.
Barclay, R. G. Beausoleil, H. Linget, J. F. Roch, F. Treussart, S. Chemer-
isov, W. Gawlik, and D. Budker, Phys. Rev. B 80, 115202 共2009兲.
13
P. H. Chung, E. Perevedentseva, J. S. Tu, C. C. Chang, and C. L. Cheng,
Diamond Relat. Mater. 15, 622 共2006兲.
14
C. C. Fu, H. Y. Lee, K. Chen, T. S. Lim, H. Y. Wu, P. K. Lin, P. K. Wei,
P. H. Tsao, H. C. Chang, and W. Fann, Proc. Natl. Acad. Sci. U.S.A. 104,
727 共2007兲.
15
I. Chao, E. Perevedentseva, P. H. Chung, K. K. Liu, C. Y. Cheng, C. C.
Chang, and C. L. Cheng, Biophys. J. 93, 2199 共2007兲.
16
C. H. Bennett and G. Brassard, in Proceedings of the IEEE International
Conference on Computers, Systems, and Signal Processing, Bangalore,
1984, p. 175.
17
F. Jelezko, I. Popa, A. Gruber, C. Tietz, and J. Wrachtrup, Appl. Phys.
Lett. 81, 2160 共2002兲.
18
M. H. Nazaré, A. J. Neves, and G. Davies, Phys. Rev. B 43, 14196 共1991兲.
19
T. Gaebel, I. Popa, A. Gruber, M. Domhan, F. Jelezko, and J. Wrachtrup,
New J. Phys. 6, 98 共2004兲.
20
J. R. Rabeau, Y. L. Chin, S. Prawer, F. Jelezko, T. Gaebel, and J. Wracht-
rup, Appl. Phys. Lett. 86, 131926 共2005兲.
21
E. Wu, J. R. Rabeau, G. Roger, F. Treussart, H. Zeng, P. Grangier, S.
Prawer, and J. F. Roch, New J. Phys. 9, 434 共2007兲.
22
M. Wolfer, A. Kriele, O. A. Williams, H. Obloh, C.-C. Leancu, and C. E.
Nebel, Phys. Status Solidi A 206, 2012 共2009兲.
23
I. Aharonovich, C. Zhou, A. Stacey, F. Treussart, J.-F. Roch, and S.
Prawer, Appl. Phys. Lett. 93, 243112 共2008兲.
24
A. Yelisseyev, S. Lawson, I. Sildos, A. Osvet, V. Nadolinny, B. Feigelson,
J. M. Baker, M. Newton, and O. Yuryeva, Diamond Relat. Mater. 12, 2147
共2003兲.
25
K. Iakoubovskii and G. Davies, Phys. Rev. B 70, 245206 共2004兲.
V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, M. E. Newton, D. J.
Twitchen, S. C. Lawson, O. P. Yuryeva, and B. N. Feigelson, J. Phys.:
Condens. Matter 11, 7357 共1999兲.
K. Iakoubovskii and A. T. Collins, J. Phys.: Condens. Matter 16, 6897
共2004兲.
A. A. Gippius, V. S. Vavilov, A. M. Zaitsev, and B. S. Zhakupbekov,
Physica B⫹C 116, 187 共1983兲.
A. Tallaire, A. T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel,
M. E. Newton, A. M. Edmonds, and R. J. Cruddace, Diamond Relat.
Mater. 15, 1700 共2006兲.
J. Isoya, H. Kanda, and Y. Uchida, Phys. Rev. B 42, 9843 共1990兲.
31
J. M. Baker, J. Phys.: Condens. Matter 15, S2929 共2003兲.
A. A. Bergman, A. M. Zaitsev, M. Huang, and A. A. Gorokhovsky, J.
Lumin. 129, 1524 共2009兲.