Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V
ICsat Collector saturation current 4.5 - A
VF Diode forward voltage IF = 4.5 A 1.6 2.0 V
tf Fall time ICsat = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
c
case
1 base
2 collector
b
3 emitter Rbe

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
-IB(AV) Reverse base current average over any 20 ms period - 100 mA
-IBM Reverse base current peak value 1 - 5 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

1 Turn-off current.

July 1998 1 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - 227 - mA
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Rbe Base-emitter resistance VEB = 7.5 V - 33 - Ω
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
hFE DC current gain IC = 1 A; VCE = 5 V - 13 -
hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflectioin circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 4.7 5.7 µs
tf Turn-off fall time 0.25 0.35 µs

2 Measured with half sine-wave voltage (curve tracer).

July 1998 2 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

ICsat h FE BU2508DF
TRANSISTOR 100
IC DIODE

t Tj = 25 C
Tj = 125 C
5V
IB IBend
10
t

20us 26us

1V
64us

VCE
1
0.01 0.1 1 10
t IC / A
Fig.1. 16kHz Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE

ICsat VBESAT / V BU2508DF

90 % 1.2
Tj = 25 C
1.1
Tj = 125 C
IC
1

0.9
10 %
0.8 IC/IB=
tf t
ts 0.7 3
IB
IBend 4
0.6
5
t 0.5

0.4
0.1 1 10
- IBM IC / A
Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB

+ 150 v nominal VCESAT / V BU2508DF

adjust for ICsat 1
IC/IB=
0.9
5
0.8
4
0.7
1mH 3
0.6
0.5
Tj = 25 C
0.4
D.U.T. Tj = 125 C
IBend LB 0.3
12nF
0.2
0.1
-VBB Rbe

0
0.1 1 10
IC / A
Fig.3. 16kHz Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB

July 1998 3 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

Zth K/W BU2508AX

VBESAT / V BU2508DF 10
1.2
Tj = 25 C
1.1 Tj = 125 C 0.5
1
0.2
1
0.1

0.05
0.9 IC= 0.1
0.02
6A
0.8
4.5A
tp t
3A 0.01 P
D D= p
T
0.7 2A
0 t
T
0.6
0.001
0 1 2 3 4 1.0E-06 1E-04 1E-02 1E+00
IB / A tp / sec

Fig.7. Typical base-emitter saturation voltage. Fig.10. Transient thermal impedance.

VBEsat = f (IB); parameter IC Zth j-hs = f(t); parameter D = tp/T

VCESAT / V BU2508DF ts, tf / us BU2508DF

10 12
Tj = 25 C 11
Tj = 125 C 10 ts
6A 9
8
4.5A 7
1 6
5 IC =
3A 4
4.5A
3 3.5A
IC=2A 2
tf
1
0.1 0
0.1 1 10 0.1 1 10
IB / A IB / A
Fig.8. Typical collector-emitter saturation voltage. Fig.11. Typical collector storage and fall time.
VCEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

Eoff / uJ BU2508DF PD% Normalised Power Derating

1000 120
with heatsink compound
110
100
IC = 4.5A
90
80
3.5A 70
100 60
50
40
30
20
10
10 0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.9. Typical turn-off losses. Tj = 85˚C Fig.12. Normalised power dissipation.
Eoff = f (IB); parameter IC; f = 16 kHz PD% = 100⋅PD/PD 25˚C = f (Ths)

July 1998 4 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

IC / A IC / A
100 100

= 0.01 = 0.01
ICM max ICM max
tp = tp =
10 IC max 10 IC max
10 us 10 us
II II

Ptot max Ptot max

1 1
100 us 100 us

1 ms 1 ms
I I
0.1 0.1
10 ms 10 ms

DC DC

0.01 0.01
1 10 100 1000 1 10 100 1000
VCE / V VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C Fig.14. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation. I Region of permissible DC operation.
II Extension for repetitive pulse operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of 30 ± 5 newton force on the centre of
the envelope. the envelope.

July 1998 5 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

MECHANICAL DATA

Dimensions in mm
15.3 max 5.2 max
Net Mass: 5.5 g
0.7 3.1
7.3 3.3 3.2

o
6.2 45
5.8

21.5
max
seating
plane

3.5 max
3.5 not tinned

15.7
min

1 2 3
2.1 max 1.2 0.7 max
1.0
0.4 M 2.0
5.45 5.45

Fig.15. SOT199; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

July 1998 6 Rev 1.600

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 7 Rev 1.600

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