STD38NH02L

STD38NH02L-1
N-channel 24V - 0.011Ω - 38A - DPAK/IPAK
STripFET™ III Power MOSFET

General features
Type VDSS RDS(on) ID
STD38NH02L-1 24V <0.0135Ω 38A
STD38NH02L 24V <0.0135Ω 38A
( s ) 3 3

■ Logic level device

c t 1
2 1

■ RDS(ON) * Qg Industry’s benchmark

d u iPAK DPAK
■ Conduction losses reduced
r o s )
■ Switching losses reduced
e P c t (
■ Low threshold drive

l e t d u
Description
s o r o
O b
This device utilizes the latest advanced design
Internal
e P
schematic diagram
-
rules of ST’s proprietary STripFET™ technology.
l e t
( s )
This is suitable fot the most demanding DC-DC
o
be achieved.
c b s
converter application where high efficiency is to
t
Applications d u - O
r o s )
■
P
Switching application

e c t (
l e t d u
s o r o
b
OOrder codes e P
l e t
s o
O b Part number
STD38NH02L-1
Marking
D38NH02L
Package
IPAK
Packaging
Tube
STD38NH02LT4 D38NH02L DPAK Tape & reel

July 2006 Rev 8 1/16

www.st.com 16
 Contents STD38NH02L - STD38NH02L-1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuit ................................................ 8

4
s )
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
(
c t
5 u
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
d
r o s )
6
P (
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

e c t
7
l e t d u
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b

2/16
 STD38NH02L - STD38NH02L-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Vspike (1) Drain-source voltage rating 30 V

VDS Drain-source voltage (VGS = 0) 24 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 24 V
VGS Gate- source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C

( s ) 38 A
ID

c t
Drain current (continuous) at TC = 100°C 27 A
IDM (2) Drain current (pulsed)

d u 152 A
Ptot

r o
Total dissipation at TC = 25°C

s )
40 W

EAS (3)
Derating Factor

e P
Single pulse avalanche energy
c t ( 0.27 W/°C

t
250 mJ
Tstg
l e
Storage temperature
d u
Tj
s o r o
Max. operating junction temperature
-55 to 175 °C

b P
1. Garanted when external Rg=4.7 Ω and tf < tfmax.

O e
- t
2. Pulse width limited by safe operating area.

l e
( s )
3. Starting Tj = 25 °C, ID = 19A, VDD = 18V

o
Table 2.
c t b
Thermal data s
Rthj-case
d u - O
Thermal resistance junction-case max 3.75 °C/W

r o
Rthj-amb
)
Thermal resistance junction-ambient max
s
100 °C/W

e PTJ

c t (
Maximum lead temperature for soldering purpose 275 °C

l e t d u
s o r o
O b e P
l e t
s o
O b

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 Electrical characteristics STD38NH02L - STD38NH02L-1

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 25mA, VGS =0 24 V
breakdown voltage
Zero gate voltage VDS = 20V 1 µA
IDSS
drain current (VGS = 0)
Gate-body leakage
( s )
VDS = 20V, TC = 125°C 10 µA

IGSS
current (VDS = 0)
c t
VGS = ± 20V ±100 nA

VGS(th) Gate threshold voltage

d u
VDS = VGS, ID = 250µA 1 1.8 2.5 V

RDS(on)
Static drain-source on
r o s )
VGS = 10V, ID = 19A 0.011 0.0135 Ω
resistance

e P c t (
VGS = 5V, ID = 9.5A 0.015 0.025 Ω

Table 4. Dynamic
l e t d u
Symbol
s o
Parameter
r o Test conditions Min. Typ. Max. Unit

gfs (1)
Forward
O b e P
-
transconductance

l e t VDS = 10V, ID = 19A 19 S

Ciss
( ) o
Input capacitance
s 1070 pF
Coss
c t s
Output capacitance

b
Reverse transfer
VDS = 25V, f = 1MHz,
VGS = 0
305 pF
Crss

d u O
capacitance

-
45 pF

r o s ) f = 1 MHz Gate

e P RG

c t (
Gate Input Resistance DC Bias = 0 Test Signal
Level = 20 mV Open
1 Ω

l e t d
td(on)u Turn-on delay time
Drain
7 ns

s o r o
tr Rise time
VDD = 10V, ID = 19A
62 ns

O b e P td(off) Turn-off delay time

RG = 4.7Ω VGS = 10V
(see Figure 13)
25 ns

l e t tf Fall time
0.44V ≤VDD ≤10V,
12 ns

s o Qg
Qgs
Total gate charge
Gate-source charge
ID = 38A,
18
4
24 nC
nC

O b Qgd Gate-drain charge

VGS = 10V, RG = 4.7Ω
(see Figure 14)
2.5 nC

Qoss(2) Output charge VDS= 16 V, VGS= 0 V 6.5 nC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A

4/16
 STD38NH02L - STD38NH02L-1 Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Source-drain current
ISD 38 A
Source-drain current
ISDM (1) 152 A
(pulsed)
VSD (2) Forward on voltage ISD = 19A, VGS = 0 1.3 V
trr Reverse recovery time ISD = 38A, di/dt = 100A/µs, 27 ns
Qrr Reverse recovery charge VDD = 18V, Tj = 150°C 22 nC
IRRM Reverse recovery current (see Figure 15) 1.6 A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
( s )
c t
d u
r o s )
e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b

5/16
 Electrical characteristics STD38NH02L - STD38NH02L-1

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

( s )
c t
d u
Figure 3. Output characterisics Figure 4. r o s )
Transfer characteristics

e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
Figure 5.

l e t d u
Transconductance Figure 6. Static drain-source on resistance

s o r o
O b e P
l e t
s o
O b

6/16
 STD38NH02L - STD38NH02L-1 Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

( s )
c t
Figure 9. Normalized gate threshold voltage
d u
Figure 10. Normalized on resistance vs
vs temperature
r o )
temperature
s
e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t
characteristics (
Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs
temperature

l e t d u
s o r o
O b e P
l e t
s o
O b

7/16
 Test circuit STD38NH02L - STD38NH02L-1

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

( s )
c t
d u
r o s )
e P c t (
Figure 15. Test circuit for inductive load

l
switching and diode recovery times
e t d u
Figure 16. Unclamped Inductive load test
circuit

s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

O b e P
l e t
s o
O b

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 STD38NH02L - STD38NH02L-1 Appendix A

4 Appendix A

Figure 19. Buck converter: power losses estimation

( s )
c t
d u
r o s )
P t (
The power losses associated with the FETs in a synchronous buck converter can be
e c
l e t
estimated using the equations shown in the table below. The formulas give a good

d u
approximation, for the sake of performance comparison, of how different pairs of devices

s o r o
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
b P
heat generated inside the devices is removed to allow for a safer working junction
O e
temperature.
- l e t
●

( s )
The low side (SW2) device requires:
o
●
●
c b s
Very low RDS(on) to reduce conduction losses
t
Small Qgls to reduce the gate charge losses
●
d u O
Small Coss to reduce losses due to output capacitance
-
●
r o )
Small Qrr to reduce losses on SW1 during its turn-on

s
●
●
e P c t (
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;

l e●t d u
The high side (SW1) device requires:

s o ●
r o
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on

O b ●
e P
the gate
Small Qg to have a faster commutation and to reduce gate charge losses

l e●t Low RDS(on) to reduce the conduction losses.

s o
O b

9/16
 Appendix A STD38NH02L - STD38NH02L-1

Table 6. Power losses calculation

High side switching (SW1) Low side switch (SW2)

Pconduction
R DS(on)SW1 * I 2L * δ R DS(on)SW2 * I 2L * (1 − δ )

IL
Pswitching Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * Zero Voltage Switching
Ig

Recovery
(1) Not applicable

( s ) Vin * Q rr(SW2) * f
Pdiode
c t
*I u
Conductio
n V
o d
Not applicable
*t *f
)
f(SW2) L deadtime

P r ( s
* Vct* f
Pgate(QG)

e t e Q g(SW1) * Vgg * f
Q
u gls(SW2) gg

o l o d
PQoss
b s P r
Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f

- O e t e 2 2

) l
1. Dissipated by SW1 during turn-on

s o
Table 7.
c t ( b s
Paramiters meaning

d u
Parameter
- O Meaning

r o d
s ) Duty-cycle

e P Qgsth
c t ( Post threshold gate charge

l e t d u
Qgls Third quadrant gate charge

s o r o
Pconduction On state losses

O b e P Pswitching On-off transition losses

l e t Pdiode
Pgate
Conduction and reverse recovery diode losses
Gate drive losses

s o PQoss Output capacitance losses

O b

10/16
 STD38NH02L - STD38NH02L-1 Package mechanical data

5 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

( s )
c t
d u
r o s )
e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b

11/16
 Package mechanical data STD38NH02L - STD38NH02L-1

TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B
B2
0.64
5.2

( s )
0.9
5.4
0.025
0.204
0.031
0.212
B3

c t 0.85 0.033
B5
B6
0.3

d u 0.95
0.012
0.037
C 0.45

r o )
0.6

s
0.017 0.023

P (
C2 0.48 0.6 0.019 0.023
D 6

t e c t 6.2 0.236 0.244

E
G
6.4
4.4
l e d u 6.6
4.6
0.252
0.173
0.260
0.181
H 15.9

s o r o 16.3 0.626 0.641

b P
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2

- O e t e 0.8 1 0.031 0.039

s ) o l
c t ( b s H

u O
C

o d ) -
A

P r ( s
t
A3
C2

t e c
A1

l e d u
o
L

o
L2 D

b s P r
B3

B6

B5
B

O t e
3

l e
=

=
B2

G
E

o
2
=

b s
1

O L1
0068771-E

12/16
 STD38NH02L - STD38NH02L-1 Package mechanical data

DPAK MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019

( s ) 0.023

t
D 6 6.2 0.236 0.244
D1
E 6.4
5.1
6.6 0.252
u c0.200
0.260
E1
e
4.7
2.28
o d 0.185
0.090
)
e1 4.4 4.6
r
0.173

P ( s 0.181
H
L
9.35
1
10.1

t e
0.368
0.039
c t 0.397

(L1)
L2
2.8
0.8
l e d u 0.110
0.031
L4 0.6

s o 1

r o
0.023 0.039

b P
R 0.2 0.008
V2 0° 8° 0° 8°

- O e t e
s ) o l
c t ( b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b 0068772-F

13/16
 Packing mechanical data STD38NH02L - STD38NH02L-1

6 Packing mechanical data

DPAK FOOTPRINT

( s )
All dimensions are in millimeters
c t
d u
r o s )
e P c t (
TAPE AND REEL SHIPMENT

l e t d u REEL MECHANICAL DATA

o
mm inch

s o r
DIM.
MIN. MAX. MIN. MAX.

O b e P A
B 1.5
330
0.059
12.992

- l e t C 12.8 13.2 0.504 0.520

( s ) o
D 20.2 0.795

c t b s G
N
16.4
50
18.4 0.645 0.724
1.968

d u - O T 22.4 0.881

r o )
TAPE MECHANICAL DATA
s
BASE QTY BULK QTY

P (
2500 2500

t
mm inch
DIM.

e t e A0
u cMIN.
6.8
MAX.
7
MIN. MAX.
0.267 0.275

o l B0

o d 10.4 10.6 0.409 0.417

b s P rB1
D 1.5
12.1
1.6
0.476
0.059 0.063

O t e D1 1.5 0.059

o l e E
F
1.65
7.4
1.85
7.6
0.065 0.073
0.291 0.299

b s K0
P0
2.55
3.9
2.75
4.1
0.100 0.108
0.153 0.161

O P1
P2
R
7.9
1.9
40
8.1
2.1
0.311 0.319
0.075 0.082
1.574
W 15.7 16.3 0.618 0.641

14/16
 STD38NH02L - STD38NH02L-1 Revision history

7 Revision history

Table 8. Revision history

Date Revision Changes

21-Jun-2004 7 Preliminary version

11-Jul-2006 8 New template, no content change

( s )
c t
d u
r o s )
e P c t (
l e t d u
s o r o
O b e P
- l e t
( s ) o
c t b s
d u - O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b

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 STD38NH02L - STD38NH02L-1

( s )
Please Read Carefully:

c t
d u
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r o s )
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