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Application
Low frequency power amplifier, Muting
Outline
1. Emitter
2. Collector
3. Base
3
2
1
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 15 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0
Collector cutoff current ICBO — — 1.0 µA VCB = 20 V, IE = 0
Base to emitter voltage VBE — — 1.0 V VCE = 1 V, IC = 150 mA
Collector to emitter saturation voltage VCE(sat) — 0.15 0.5 V IC = 500 mA, IB = 50 mA*2
DC current transfer ratio hFE*1 250 — 1200 VCE = 1 V, IC = 150 mA*2
Gain bandwidth product fT — 250 — MHz VCE = 1 V, IC = 150 mA
Notes: 1. The 2SD655 is grouped by hFE as follows.
2. Pulse test
D E F
250 to 500 400 to 800 600 to 1200
Main Characteristics
600 0.04
0.035
20 0.015
200
0.01
10
0.005 mA
IB = 0
0 50 100 150 0 2 4 6 8 10
1,000 10,000
DC Current Transfer Ratio hFE
VCE = 1 V VCE = 1 V
Collector Current IC (mA)
100 1,000
30 300
10 100
3 30
1 10
0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000
3.0 3,000
Gain Bandwidth Product fT (MHz)
VCE = 1 V
IC = 10 IB
1.0 1,000
0.3 300
VCE (sat) (V)
0.1 100
0.03 30
0.01 10
0.003 3
3 10 30 100 300 1,000 3,000 0.3 1.0 3 10 30 100 300
f = 1 MHz
20 IE = 0
10
1
1 2 5 10 20 50
Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-43A PRSS0003DA-A TO-92(1) / TO-92(1)V 0.25g Unit: mm
5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.55 Max 0.7 0.5 Max
1.27
2.54
Ordering Information
Part Name Quantity Shipping Container
2SD655DTZ-E 2500 Hold Box, Radial Taping
2SD655ETZ-E
2SD655FTZ-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.