EC21107@VD Semiconductor Devices 

Continuous Assessment-1

1. Label the following planes using the correct notation for a cubic lattice of unit cell edge
length a (shown within the unit cell).

2. Write out all of the equivalent <100> directions using the correct notation.

3. Which of the following three unit cells are primitive cells for the two-dimensional lattice.
Which is the correct combination below.

4. Which of the following three planes (shown within the first quadrant only) is a (121)
plane?

5. Diamond and zincblende crystal structures are both composed of a Bravais lattice with a
two-atom basis. Name the correct unit cell. (Cubic, FCC, BCC)

6. GaAs has a zincblende crystal structure. (T/F)

7. Si has diamond crystal structure. (T/F)

8. Calculate the densities of Si and GaAs from the lattice constants. The atomic weights of
Si, Ga, and As are 28.1, 69.7, and 74.9, respectively. Lattice constant of Si and GaAs are
5.43 Å and 5.65 Å respectively.
EC21107@VD Semiconductor Devices 

9. The atomic radii of In and Sb atoms are approximately 1.44 A and 1.36 A, respectively.
Using the hard-sphere approximation, find the lattice constant of InSb (zinc blende
structure), and the volume of the primitive cell. What is the atomic density on the (110)
planes? (Hint: The volume of the primitive cell is one-fourth the fcc unit cell volume.)

10. Assuming that the lattice constant varies linearly with composition x for a ternary alloy,
what composition of AlSbxAs1-x is lattice-matched to InP?
What composition of InxGa1-xP is lattice-matched to GaAs? What is the band gap energy
in each case?
[Lattice constants AlSb (6.14 Å), AlAs (5.66 Å), InP (5.87 Å), GaP (5.45 Å), GaAs (5.65
Å). For bandgap use the picture given below]

11. A Silicon crystal is to be pulled from the melt and doped with arsenic (kd = 0.3). If the Si
weighs 1 kg, how many grams of arsenic should be introduced to achieve 1015 cm-3
doping during the initial growth? [Atomic weight of As=74.9 g/mol, density og Si = 2.33
g cm-3 ]

12. Consider growing InAs on the following crystal substrates: InP, AlAs, GaAs, and GaP.
For which case would the critical thickness of the InAs layer be greatest?