HOME ASSIGNMENT: UNIT-2 (sOLID STATEPHYSICS)

CrystalStructure
and thrcc
I. (a) Detine a space lattice. What is unit cell? Definc translational vectors for a two
dimensional lattice.
(b)Sketch space lattices of Liand Cu.
(c) Consider a two dimensional single layer carbon (called Graphene) having honeycomb
hexagonal structure with (wo inequivalent atoms A and B separated by a distance 0.142 nm.
Ans. 0.246 nm
Sketch a unit celland determine the lattice constantof Graphene.

Graphene
0.42 nm

2. Consider a cubic crystal

(001), (110),
(a) Draw the following plancs, (011), (20), (212), (1i1), (121), (311), (104),
(496), (421), (321), (304)
(b) Draw the following directions, [l|1], [124], (222]1, [0o1], [221], [O12]. [111]. [O11], (102],
(331]. [331], [112]. [322|
radius r.
3. (a) Determine the planar density of (111) plane in FCC system in terms of atomic
Ans. 1/(2V3r2)
of atoms in this
(b) Sketch [l10] direction in FCC system and determine the line density
direction in terms of r. Ans. 1/(2r)
the
(c) Draw (100) and (1|1) crystallographic planes for Iron al room temperaturc. Calculate
planar density for each of these plancs. The Iron exhibits BCC structure below 912'C
Ans. 1.2x 10" Atoms/m, 0.70 x 10 Atoms m

4. Calculate the volume density of Si atoms (number of atoms/cm3) given that the lattice constant
of Si is 5.43 angstroms. Calculate the areal density of atoms (number/cm2) on the (100) plane
and (111) plane.
5. Write the directions (indicatcd by arrow) and planes (shaded rcgion) in following crystal
structures
 B

19

12

12
1/4
I1/2

6. (a) Sketch the unit cells of Copper. Chromium, Magnesium, Ailicon. and Indium Antimonide
and name their structures.
(b) Consider a unit cell of Aluminium with lattice constant-0,405 nm
(i) How many unit cells are in an Aluminium foil which is 0.005 cm thick and side 25 cm
(i) The Al foil weight is 8.45 g. How many atoms are present?
(Atomic weight of Al = 26.98 g/mole.)
(i11) How many atoms arethere in each unit cell?
Ans.4.7x102 cells,(ii) 1.9 x102 atoms, (ii) 4 atoms
7. (a) What is difference between primitive cell and unit cell? Consider Si and Mg crystals;
calculate the packing density in these crystals.
(b) Calculate the lattice constant of KBr. Density of KBr is 2.7x10 Kg/m and it bclongs to
FCC lattice. Given molecular weight of KBr= |1, Avogadro's number-6.02x 10 per kg mole.
Ans. 0.664 nm
8. NaClexhibits FCC structure whose density is 2180 Kg/m'. The atomic weights of Naand Cl
are 23 and 35.5 respectively. Find the lattice constant 'a' of the NaCl structure.
Ans. 0.563 nm

9. (a) Name an experimental techniquc which can be used to determine crystal plancs and latice
constants of a material and elaborate the method for cubic and tetragonal structured materials to
determine their structural properties.
0.126 nm.
(b) In tetragonal lattice, a-b-0.25 nm, and lattice spacing between (111) planes isAns. 0. 18 nim
Determine lattice constant c.

(1|1) planes.
10. In a tetragonal latiee a-b-0.25 nm and c-0.18 nm, deternine the spacing between Ans. 0.1 26 nm

atomic radius.
T. In a bcc structure, the spacing of (121) plancs are 0.1 nm Find the Ans. 0.106 nm

filled by hard
12. Calculate the maximum packing fraction of the unit cell volume that can be efficiently fills
structure most
spheres in the SC, BCC, FCC, and Diamond structures. Which
the space?
atomic radius r) that can just fit into
13. Find the maximum radius of interstitial sphere (in terms of Ans. 0. 1I55r
structure.
the empty space between the Body centered atoms of BCC
atomic radius r) that can just fit into the
14. Find the maximum radius of the sphere (in terms of
structure coordinated by facial atoms.
empty space at the body centre of the FCC Ans. rV2-1]

Ga
InP substrate. What valuc ofx (the fiaction of
15. An engincer wants to grow GaIn1-xAs on an defects
grow a relatively thick film without
and the fraction of In) is necded so that he can
occurring?
aGalnAs (X) = XaGÀs + (1X) · anAs
6.0584 angstroms are the lattie constants
where the terns aciaAs =5.6533 angstroms and as =
of the two semiconductors. Also, ainp=5.8686 angstroms)

Band Theory of Solid

1. Ihe Kronig-Penneymodel, we aye
sin aa t cos aa = cos ka
P

Where P= moab discuss the effect ofP whèn (a) P’0 and (b) P ’0.

side of this square lattice

2. Plot the first three BrNlouin zone for a 2D square lattice. If the
the first Brillouin
a=3Åthen calculate thè momentum of electron at the boundaries of
zone. Also calculate the energrof free electron corresponding to this momentum.
3. Using the Kronig- Penny model,show that for P<<1, the energy of the lowest energy band
P
7ma

4. Determine the lowest allowed energy bandwidth assuming that the coefficient P= 10 and
width of potential a =5Å.

5. For free electron hk represents the true momentum of electron, however for electrons
moving in the periodic potential, hk does not represents the true momentum, but
represents "crystal momentum".
Now consider an electron moving across the first Brillouin zone, show that the period of
Bloch oscillation (time t required for the electron to accelerate across the first Brillouin
zone) for a 1D crystal having lattice constant a is,
h
T=
eEa

6. lf an energy-wavevector (E - k) relationship for a particle of mass mhas the form,

E =k2
3m
then prove that the effective mass m is 1.5 times greater than the actual mass m.

7. If the energy- wavevector relationship for an electron in some material is,

3m-cos(k)
E =

Determine the effective mass and group velocity, what are their values at (i) k = 0, (i)
k=;.(i) k =n,(iv) k= ,(v) k =n In particular, de'scribe the motion as kvaries
2

from 0 to 2Tt (ignore scattering)

8. If the energy-wavevector relationship for an electron in some material is.

E = Eo + 2A cos(ka)
determine the electron's position as a function of time (Ignore scattering).
9. Consider an electron in a perfectly periodic lattice, wherein the energy-wavevector
relationship in the first Brillouin zone is
E= k2
5me
where m, is the mass of an electron in free space. Write down the time-independent
effective mass Schrödinger's equation for one electron in the first Brillouin zone. Define all
terms in Schrödinger's equation.

10. In the band theory of solids, there are an infinite number of bands. If, at T = 0K, the
uppermost band to contain electrons is partially filled, and the gap between that band and
the next lowest band is 0.8 eV, is the material a metal, an insulator, or a semiconductor?
11. If, at T = 0K, the uppermost band to have electrons is completely illed, and the gp
between that band and the next lowest band is 8 eV. is the material a metal, an insuaor;
or a semiconductor? What if the gap is 0.8 eV?

12. A Germanium sample is placed normal to a 0.5 T magnetic field when a current T mAs
1 cm respectively. The
passing through it. The length and width ofthesample is 2 cm and
measured Hall voltage is 6mV. Determine the concentration of charge carriers.

10% m'C1 at 300K. What is

13. The Hall coefficient R of a Silicon sample is found to be -7.35x
the sample is 200 91m,
the nature of the sample? If the electrical conductivity of
calculate the carrier concentration and mobility.

voltage is 30 mV for a current

14. Find Hall coefficient and charge carrier concentration if Hall
a
of 70 mA. The thickness of the sample is 3 mm which is placed perpendicular to
magnetic field strength 6x10'Gauss.