FFB2222A / FMB2222A / MMPQ2222A

FFB2222A FMB2222A MMPQ2222A

E2 C2 B4
E4
B2 E1 B3
E3
C1 B2
C1 E2
B1
E1 C4
C2 B2 C4
SC70-6 B1
C3
E2 C3
Mark: .1P pin #1 E1 C2
pin #1 B1
SOIC-16 C1
C2
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
SuperSOT-6 Mark: pin #1 C1
be of either orientation and will not affect the Mark: .1P MMPQ2222A
functionality of the device. Dot denotes pin #1

NPN Multi-Chip General Purpose Amplifier

This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 5.0 V 4
IC Collector Current - Continuous 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

FFB2222A FMB2222A MMPQ2222A
PD Total Device Dissipation 300 700 1,000 mW
Derate above 25°C 2.4 5.6 8.0 mW/°C
RθJA Thermal Resistance, Junction to Ambient 415 180 °C/W
Effective 4 Die 125 °C/W
Each Die 240 °C/W

 1998 Fairchild Semiconductor Corporation

 FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 40 V
Voltage*
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 60 V, IE = 0 10 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 10 nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 150 mA, VCE = 10 V* 100 300
IC = 150 mA, VCE = 1.0 V* 50
IC = 500 mA, VCE = 10 V* 40
VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA 0.3 V
IC = 500 mA, IB = 50 mA 1.0 V
VBE(sat) Base-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA 1.2 V
IC = 500 mA, IB = 50 mA 2.0 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF
NF Noise Figure IC = 100 µA, VCE = 10 V, 2.0 dB
RS = 1.0 kΩ, f = 1.0 kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, 8 ns
tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ns
ts Storage Time VCC = 30 V, IC = 150 mA, 180 ns
tf Fall Time IB1 = IB2 = 15 mA 40 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
 FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYPICAL PULSED CURRENT GAIN

500 0.4
V CE = 5V
β = 10
400
0.3
125 °C
300
125 °C
0.2
200
25 °C 25 °C

100 0.1
- 40 °C
- 40 °C
0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
V BESAT - BASE-EMITTER VOLTAGE (V)

1
1 β = 10 VCE = 5V

- 40 °C 0.8 - 40 °C
0.8 25 °C 25 °C

0.6
125 °C
0.6 125 °C

0.4
4
0.4

0.2
1 10 100 500 0.1 1 10 25
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Emitter Transition and Output

vs Ambient Temperature Capacitance vs Reverse Bias Voltage
500
I CBO - COLLECTOR CURRENT (nA)

20 f = 1 MHz
100 V = 40V
CB
CAPACITANCE (pF)

16
10

12
1 C te

8
0.1
C ob
4

25 50 75 100 125 150 0.1 1 10 100

T A - AMBIENT TEMPERATURE (° C) REVERSE BIAS VOLTAGE (V)
 FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Turn On and Turn Off Times Switching Times

vs Collector Current vs Collector Current
400 400
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
320 320
V cc = 25 V V cc = 25 V
TIME (nS)

TIME (nS)
240 240

160 160 ts
tr
t off
80 80 tf
t on
td
0 0
10 100 1000 10 100 1000
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWE R DIS SIPATION (W)

SOIC-16

0.75 SOT-6

0.5
SC70 -6
0.25

0
0 25 50 75 100 125 150
TE MPE RATURE (°C)
 FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)

Typical Common Emitter Characteristics (f = 1.0kHz)

Common Emitter Characteristics Common Emitter Characteristics

CHAR. RELATIVE TO VALUES AT I C = 10mA

CHAR. RELATIVE TO VALUES AT TA = 25oC

8 2.4
V CE = 10 V V CE = 10 V
T A = 25oC I C = 10 mA h re
2 h ie
6
h fe
1.6
h oe
hoe
4 1.2

h re
0.8
2
h fe
0.4
h ie
0 0
0 10 20 30 40 50 60 0 20 40 60 80 100
I C - COLLECTOR CURRENT (mA) T A - AMBIENT TEMPERATURE ( o C)

Common Emitter Characteristics

CHAR. RELATIVE TO VALUES AT VCE = 10V

1.3
I C = 10 mA
1.25 T A = 25oC h fe
1.2
1.15
1.1 h ie
1.05
1
0.95
0.9
h re 4
0.85
hoe
0.8
0.75
0 5 10 15 20 25 30 35
VCE - COLLECTOR VOLTAGE (V)
 FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)

Test Circuits
30 V

200 Ω

16 V
Ω
1.0 KΩ
0

≤ 200ns
500 Ω

FIGURE 1: Saturated Turn-On Switching Time

- 1.5 V 6.0 V

1k 37 Ω

30 V
Ω
1.0 KΩ
0

≤ 200ns
50 Ω

FIGURE 2: Saturated Turn-Off Switching Time

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench  SyncFET™

Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ UHC™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOSTM MICROWIRE™ SILENT SWITCHER 
EnSignaTM OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST  POP™ SuperSOT™-8

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G