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This article can be cited before page numbers have been issued, to do this please use: Y. Shu, T. Ando,
Q. Yin, G. Zhou and Z. Gu, Nanoscale, 2017, DOI: 10.1039/C7NR01402C.
Volume 8 Number 1 7 January 2016 Pages 1–660 This is an Accepted Manuscript, which has been through the
Royal Society of Chemistry peer review process and has been
accepted for publication.
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[22], Sn-Bi [23-25], and Sn-In [26-28]. Joining applications using the
1. Introduction nanosolders are currently being developed [13, 15, 18-19, 26-27]. It
is also found that solders with the addition of nanoparticles tend to
In recent years, due to the health risk and environmental
have a smaller grain size [11, 29-32] and significant slower
problems of lead (Pb) containing soldering materials, many studies
intermetallic compound (IMC) growth during the aging [33-37] that
have been carried out in order to seek for alternative solders [1-2].
improved the mechanical properties.
Most current lead-free solder materials tend to have higher melting
However, the understanding of thermal properties of
temperatures, weaker mechanical properties, and higher
nanosolders, such as melting temperature and phase behavior, has
occurrence of undesirable intermetallic compounds than the
been very limited, especially for binary or ternary alloys. Their
traditional tin-lead (Sn/Pb) solders [3-6]. Furthermore, with the
phase diagrams and phase transitions will improve the
miniaturization of consumer electronics and devices, solder
understanding of nanosolders which can provide important
materials are required to be stronger, as well as being able to
information for their composition selection, solderability and
connect smaller components together while having lower
ultimately joint quality. Thermodynamic approaches of nanosolder
processing temperature [3-7]. This is especially true for the
phase diagrams using Computer Calculation of Phase Diagram
assembly and packaging of flexible electronics [8] and heat sensitive
(CALPHAD) modeling have been explored, including Sn-Ag [38] and
components such as LED, which require low assembly temperatures
SAC systems [39]. While providing some valuable information, the
and small scale joining.
theoretical approach is still limited in scope.
Nanosolders stood out among the candidates to replace the
Tin/Indium (Sn/In) solder alloys, with a eutectic temperature of
traditional Sn/Pb solders because some currently used lead-free o
118 C at Sn/In 48/52, is useful as a low temperature solder for
solders have relatively high melting temperatures; the low melting
assembling electronics and devices that are susceptible to
temperature of the nanosolders and ability to join small features
temperature damage if conventional solders are used and their
makes them ideal for micro/nanoscale assembly and soldering
excellent properties in ductility and malleability. Sn/In solders also
applications [9-11]. Several nanosolder systems have been
wet glass, quartz, and ceramic materials, which makes them
developed, such as Sn-Ag-Cu (SAC) [12-16], Sn-Ag [17-21], Ni-Sb-Sn
suitable for metal to non-metal joining. In addition, Sn/In is a binary
system with two intermetallic compounds γ-InSn4 and β-In3Sn in a
a.
wide composition range, making it an ideal system to investigate
Department of Chemical Engineering, University of Massachusetts Lowell, One
University Ave, Lowell, MA 01854, USA. the nanoscale phase diagram and phase transition [40]. From the
b.
Department of Mechanical and Industrial Engineering, Northeastern University, previous study on the synthesis and characterization of Sn/In
360 Huntington Ave, Boston, MA 02115, USA
c.
Department of Mechanical Engineering & Multidisciplinary Program in Materials
nanosolder particles [26], a wide composition range (20% to 70% In)
Science and Engineering, State University of New York, Binghamton, 4400 Vestal of Sn/In nanosolder particles has been achieved. In the present
Parkway East, Binghamton, NY 13902, USA study, the phase transition of Sn/In nanosolder particles has been
Electronic Supplementary Information (ESI) available: See investigated under different temperature treatments. HRTEM, XRD
DOI: 10.1039/x0xx00000x and DSC were used to investigate their structural transition along
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 1
different temperatures and compositions. Tammann diagrams were phase transition temperatures of the specimens, at aView
heating rate
Article Online
used to obtain the eutectic composition. Finally, phase transition of 10 °C/min from 50 °C to 300 °C. DOI: 10.1039/C7NR01402C
from the as-synthesized nanoparticles (non-equilibrium state) to
heat treated samples (equilibrium state) was discussed.
3. Results and discussion
2.3 Characterization
Sn/In nanoparticles were examined by scanning electron
microscopy (SEM, JEOL7401F field emission-SEM) for their
morphology and size. The elemental composition of the Sn/In
nanosolder particles with different Sn/In ratios was examined by an
energy dispersive X-ray spectrometer (EDS) equipped on the FE-
SEM. Transmission electron microscopy (JEOL EM2100F) was also
used to examine the morphology of the nanosolder particles as well
as to identify the crystal structure of individual nanoparticles. The
Sn/In nanoparticles, with and without heat treatment, were
subjected to X-ray diffraction (XRD, BRUKER AXS D5005 X-ray
diffractometer, Cu KR radiation, λ=1.540598 Å) to identify the
phases presented in the specimens. Differential scanning
calorimetry (DSC, TA instrument Q100) was used to determine the
2 | J. Name., 2012, 00, 1-3 This journal is © The Royal Society of Chemistry 20xx
30
whereas the InSn4 decreased accordingly inDOI:the10.1039/C7NR01402C
same range of In
concentration. The absence of the equilibrium phase In3Sn at the
compositions studied indicates that the as-synthesized Sn/In
count
20
o
melting of the remaining In at the liquidus temperature at 122.8 C,
10 o o o
125 C, 128.7 C, and 148.4 C, respectively.
100 nm 0
30 40 50 60 70 80 90 100 Comparing the above phase behavior with the equilibrium
size (nm) Sn/In phase diagram [40], significant differences can be observed.
Fig. 1: SEM images and the size analysis of Sn/In nanosolder At equilibrium state, the 24% In specimen is expected to consist
particles at Sn/In compositions: (a) 70/30, (b) 50/50, and (c) 30/70. mainly of InSn4 at room temperature [40], but the phases present in
the as-synthesized nanoparticles are InSn4 and Sn. Also, the eutectic
100 composition of the Sn-In system at the equilibrium state was
reported to be 52% In with the contribution from InSn4 and In3Sn.
However, in the present study the In3Sn phase was absent in the
80 Sn/In nanosolder particles at any of the compositions examined.
72
Instead, In was found from the specimens with indium content from
In% from EDS (%)
65
35% to 72%, whereas In should only be observed from 88% to 100%
60 56 In if the alloy is at equilibrium state. The absence of In3Sn phase and
47 the phase boundary shift suggested that the as-synthesized Sn/In
nanosolder particles were not in the equilibrium state. Therefore, a
40
35 series of heat treatments were conducted to investigate the phase
24 transition of the Sn/In nanosolder particles.
20
3.3 HRTEM analysis of the as-synthesized Sn/In nanosolder
particles
0 The morphology and crystal structures of the as-synthesized Sn/In
0 10 30 50 70 90 In nanosolder particles with different elemental compositions were
Starting In% also examined by HRTEM. Fig. 3a represents the morphology of a
typical polyhedral nanoparticle that was found in the 35% In
Fig. 2: EDS results of Sn/In nanoparticles at different weight specimen. HRTEM image of this particle is shown in Fig. 3b. Fig. 5c
compositions. shows a calculated Fast Fourier Transformed (FFT) pattern from the
selected area marked by the white dashed square as indicated in
Fig. 3b. The HRTEM image in Fig. 3b clearly reveals that the
3.2 Structure analysis of the as-synthesized Sn/In nanosolder nanoparticle is a single crystal with a thin (<5nm) layer of
particles amorphous oxide on the surface. The interplanar spacing d
XRD was used to identify the phases at different Sn/In measured from the HRTEM image is 0.28 nm, which is close to
compositions (Fig. S-2) [26]. From the XRD results, at 24% In, mainly 0.278 nm for InSn4 {10𝟏 ̅0} or 0.279 nm for β-Sn {011}. The FFT
InSn4 peaks with small Sn peaks were observed. In the XRD spectra diffraction pattern as shown in Fig. 5c can only be indexed as InSn4
of other Sn/In compositions (35%-72%), both InSn4 and In can be along the <0001> zone axis because InSn4 is hexagonal (P6/mmm).
observed. The intensity of In peaks increased from almost negligible
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 3
Journal Name
10 nm
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InSn4[0001]
Fig. 3: (a) Morphology of In 35% specimen, (b) HRTEM image of the particle as shown in Fig. 3 (a), (c) Diffractogram from the selected area
marked by the white dash square indicated in Fig. 3 (b).
Therefore, the phase and structure of nanoparticles in 35% In InSn4 along the [0001] zone axis. Therefore, the two typical phases
specimen are confirmed as InSn4. TEM examination of other of nanoparticles in the 56% In specimen are In and InSn 4,
nanoparticles of this specimen further confirmed the crystallinity respectively. The results match well with the XRD observation in the
and phase of the nanoparticles in 35% In specimen as single crystals previous section (Fig. S-2), and further confirmed that a mixture of
of InSn4. The analysis agreed with the XRD analysis shown. From the both In and InSn4 phases exists in the form of separate single
XRD result, a very small amount of In should also be present in this crystalline nanoparticles. The In particles are well rounded and the
specimen (see Fig. S-2); however, due to the limited number of InSn4 particles are faceted.
nanoparticles that were examined by HRTEM, In nanoparticles were Similar to the 56% In specimen, two types of nanoparticles were
not found through HRTEM imaging. found in the 72% In specimen. Fig. 5a shows a HRTEM image and a
The HRTEM analysis of the 56% In specimens is shown in Fig. 4. low-magnification overview (inset) of one of the two types of the
Two typical types of nanoparticles were found in this composition. nanoparticles in the 72% In specimen. Fig. 5b is a FFT calculated
Fig. 4a represents one typical structure of the nanoparticles. The pattern from the area marked by the dashed line in Fig. 5a, which
inset in Fig. 4a is a low magnification bright field (BF)-TEM image of matches well with that of In along the [111] zone axis. Another type
the nanoparticle, from which we can see the size and the shape of of nanoparticles in the sample is shown in Fig. 5c. An electron
the particle. The diffraction pattern from the area marked by the diffraction pattern taken from the area encircled by the red dashed
dashed square in Fig. 4a is shown in Fig.4b. It matches well with the line in Fig. 5c is shown in Fig. 5d. The diffraction pattern is indexed
diffraction pattern of In along the <100> zone axis. Fig. 4c and matches well with hexagonal InSn4 along [𝟏 ̅𝟐𝟏̅𝟎]. Compared to
represents another typical structure of the nanoparticles in the 56% the 56% In specimen, more In nanoparticles were found during the
In specimen. The HRTEM of Fig. 4c is taken from the edge of the examination; however, the particles that were found in this
particle indicated by the red arrow in the low magnification image composition are still In and InSn4 nanoparticles, which agreed with
in the inset. The diffractogram from the area marked by the white the XRD analysis as well.
dash square in Fig. 4c is shown in Fig. 4d, which matches well with
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 4
(011)
In[100]
(d) FFT
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Fig. 4: In 56%, specimen, (a) HRTEM image and low-magnification TEM image (inset) of an In nanoparticle, (b) Diffractogram from the area
marked by the white dash square in Fig. 4 (a); (c) HRTEM image and low-magnification TEM image (inset) of an InSn4 nanoparticle, (d)
Diffractogram from the area marked by the white dash square in Fig. 4 (c).
(c) (d) InSn4[1210]
(2110)
(0001)
Fig. 5: 72% In specimen; (a) HRTEM image and low magnification TEM image (inset) of an In particle, (b) Diffractogram of the area marked
by the white dash square in Fig. 5(a); (c) BF-TEM image of InSn4 nanoparticles, (d) Electron Diffraction pattern taken from the area encircled
by the red dash line in Fig. 5(c).
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 5
synthesized 24% In specimen and the same samples that were heat
(a) RT (b) RT
115.6
223.5
50oC 50oC
117.5 223.5
100oC 100oC
Intensity (%)
Heat Flow (W/g)
116.5 218.1
125oC 125oC
114.9
222.2
150oC 150oC
114.7
215.1
225oC 225oC
119.1
201.3
100 200 25 30 35 40 45 50 55 60 65 70 75 80
o o
Temperature ( C) Deg. ( ) InSn4 Sn In SnO
Fig. 6: Specimen of 24% In treated under different temperatures: (a) DSC curves, and (b) XRD spectra.
o
treatment temperature from 50-150 C is not sufficient to reach the be observed that the major compound that was present after the
o
equilibrium state. For the specimen after 225 C treatment, the Sn 225 °C heat treatment was InSn4, which is very close to the result in
peak became very small, indicating a small amount of isolated Sn the equilibrium phase diagram at the 24% In [40]. As the
o o
particles still remained. In the meanwhile, a small peak at 50.9 temperature increased to 225 C, the Sn/In nanosolder particles
corresponding to SnO crystal showed up in the XRD spectrum of the with 24% In moved from the metastable state to the equilibrium
specimen. It is confirmed that the amorphous SnO crystallized state.
o
during the 225 C treatment, and the exothermic peak observed on The comparison of the 35% In specimen heated at different
o
the DSC curves of the 50-150 C treatments was from the temperatures is shown in Fig. 7. From the DSC curve (Fig. 7a), the
o
crystallization of SnO. From the XRD of the 225 C specimen, it can as-synthesized Sn/In nanosolder particles only showed one peak at
6 | J. Name., 2012, 00, 1-3 This journal is © The Royal Society of Chemistry 20xx
(a) RT (b) RT
115.5
50oC 50oC
118.4 204.7
100oC 100oC
Heat Flow (W/g)
Intensity (%)
117.3 213.7
125oC 125oC
116.8 206.8
150oC 150oC
116.9 203.5
225oC 225oC
119.7 175.1
100 150 200 30 40 50 60 70 80
o o InSn4 Sn In SnO In3Sn
Temperature ( C) Deg. ( )
Fig. 7: 35% In specimen treated under different temperatures: (a) DSC curves, and (b) XRD spectra.
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 7
116.1
50oC 50oC
119.7 127
100oC
Heat Flow (W/g)
100oC
Intensity (%)
120.4 127.5
125oC 125oC
117.8 126.6
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117.8 123.3
225oC 225oC
121.1
100 150 200 250 30 40 50 60 70 80
o
Temperature ( C) o
Deg. ( ) InSn4 In3Sn In SnO
Fig. 8: Specimen of 56% In treated under different temperatures: (a) DSC curves, and (b) XRD spectra.
(a) RT (b) RT
117.9 148.4
50oC 50oC
119.3 152.4
140.8
Intensity (%)
Heat Flow (W/g)
100oC 100oC
118.9 152.7
140.2
125oC 125oC
117.7
139.1 152.1
150oC 150oC
132.5 135.3
225oC 225oC
128.3
131.7
100 150 200 250 30 40 50 60 70 80
o
Temperature (oC) Deg. ( ) InSn4 In3Sn In SnO
Fig. 9: Specimen 72% In specimen treated under different temperatures: (a) DSC curves, and (b) XRD spectra.
8 | J. Name., 2012, 00, 1-3 This journal is © The Royal Society of Chemistry 20xx
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 9
3.5 Phase diagram analysis Sn/In nanosolder particles shifted toward the equilibrium state.Online
View Article The
formation of In3Sn is accelerated with the DOI: 10.1039/C7NR01402C
heat treatment. The
The eutectic composition and eutectic range were calculated from eutectic composition moved from 62.1% to 53.8% In as the heat
the respective Tammann diagrams. The eutectic range of the as- applied. In the as-synthesized specimen, metastable eutectic
o
synthesized nanoparticles is 32.7%-75.2% In and after 225 C melting between InSn4 and In occurs in a composition range
treatment the eutectic range is 24.7%-65.4% In. The eutectic between 32.7% and 75.2% In, which is much wider than that for the
compositions determined from the DSC data of the respective equilibrium eutectic melting between InSn4 and In3Sn (23 - 57% In).
conditions are 62.1% and 53.8%. The above information may be The phase transition phenomenon of the Sn/In nanosolder particles
used to construct full range phase diagrams. Fig. 11 shows the not only provides structure-property information of Sn/In solders at
metastable phase diagram of the as-synthesized Sn/In nanosolder a nanoscale, but also contributes to the design and development of
o
particles and the equilibrium phase diagram of the 225 C heat nanosolders for their potential application in a smaller scale.
treated nanoparticles. From Fig. 11a, the metastable phase
boundaries, as well as the eutectic composition, of the as-
synthesized Sn/In nanosolder phase diagrams are shifted to the In Conflicts of Interests
Published on 25 July 2017. Downloaded by University of Windsor on 29/07/2017 03:08:19.
Fig. 11: Full range metastable phase diagram comparing with the equilibrium phase diagram: (a) as-synthesized Sn/In nanosolder particles,
o
(b) the nanoparticles heat treated at 225 C.
10 | J. Name., 2012, 00, 1-3 This journal is © The Royal Society of Chemistry 20xx
Journal Name
This journal is © The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 11