SHINDENGEN

Schottky Rectifiers (SBD) Dual

OUTLINE DIMENSIONS
D5SC4M Case : ITO-220 Unit : mm

40V 5A

FEATURES
Tj150
PRRSM avalanche guaranteed
Fully Isolated Molding

APPLICATION
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommunication

RATINGS
œAbsolute Maximum Ratings (If not specified Tc=25Ž)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40`150 Ž
Operating Junction Temperature Tj 150 Ž
Maximum Reverse Voltage VRM 40 V
Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 45 V
Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=136Ž 5 A
Peak Surge Forward Current I FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125Ž 50 A
Repetitive Peak Surge Reverse Power PRRSM Pulse width 10Ês, Rating of per diode, Tj=25Ž 330 W
Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV
Mounting Torque TOR (Recommended torqueF 0.3N¥m) 0.5 N¥m

œElectrical Characteristics (If not specified Tc=25Ž)

Item Symbol Conditions Ratings Unit
Forward Voltage VF IF=2.5A, Pulse measurement, Rating of per diode Max 0.55 V
Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max 2.5 mA
Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode Typ 116 pF
Thermal Resistance Æjc junction to case Max 3.3 Ž/W
Æjf junction to heatsink (reference value) Max 4.8

Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd

 D5SC4M Forward Voltage

10
Forward Current IF [A]

Tc=150°C [MAX]
Tc=150°C [TYP]

Tc=25°C [MAX]
Tc=25°C [TYP]
1

Pulse measurement per diode

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Forward Voltage VF [V]

 D5SC4M Junction Capacitance

1000
f=1MHz
Tc=25°C
TYP
per diode

100

Junction Capacitance Cj [pF]

10
0.1 1 10

Reverse Voltage VR [V]

 D5SC4M Reverse Current
1000

Tc=150°C [MAX]
100

Tc=150°C [TYP]
Reverse Current IR [mA]

10 Tc=125°C [TYP]

Tc=100°C [TYP]

Tc=75°C [TYP]

0.1

Pulse measurement per diode

0.01
0 5 10 15 20 25 30 35 40

Reverse Voltage VR [V]

 D5SC4M Reverse Power Dissipation
10
Reverse Power Dissipation PR [W]

8 DC
D=0.05
0.1
0.2
6
0.3

4 0.5

2 SIN
0.8

0
0 10 20 30 40 50

Reverse Voltage VR [V]

Tj = Tjmax 0
VR

tp
D=tp /T
T
 D5SC4M Forward Power Dissipation
5

DC
D=0.8
Forward Power Dissipation PF [W]

4
0.5
SIN
0.3
0.2
3
0.1
0.05

0
0 1 2 3 4 5 6 7 8

Average Rectified Forward Current IO [A]

Tj = Tjmax
IO
0
tp
D=tp /T
T
 D5SC4M Derating Curve
10
Average Rectified Forward Current IO [A]

DC
8
D=0.8

6
0.5
SIN
0.3
4
0.2

0.1

2 0.05

0
0 20 40 60 80 100 120 140 160

Case Temperature Tc [°C]

VR = VRM/2
IO
0
0
VR

tp
D=tp /T
T
 D5SC4M Peak Surge Forward Capability
100

IFSM
10ms 10ms
1 cycle
non-repetitive,
80 sine wave,
Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]

60

40

20

0
1 2 5 10 20 50 100

Number of Cycles [cycles]

 SBD Repetitive Surge Reverse Power Derating Curve
120

100
PRRSM Derating [%]

80

60

40

20

0
0 50 100 150

Junction Temperature Tj [°C]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP

 SBD Repetitive Surge Reverse Power Capability
10
PRRSM(t p) / PRRSM(t p=10µs) Ratio

0.1
1 10 100

Pulse Width t p [µs]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP