HIGH SPEED

Silicon Controlled Rectifier C364/C365

600 Volts 275 ARMS AM""Y'NG GATe ~

The General Electric C364 and C365 Silicon Controlled Rectifiers are de-
signed for power switching at high frequencies. These are all-diffused Press-
Pak devices employing the field-proven amplifying gate.

FEATURES:
" Fully characterized for operation in inverter and chopper applications.
to High di/dt ratings.
.. High dv/dt capability with selections available.
to Rugged hermetic glazed ceramic package.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE REPETITIVE PEAK REVERSE NON-REPETITIVE PEAK
TYPES VOLTAGE, VDRMI VOLTAGE, VRRMI REVERSE VOLTAGE, VRSM 1
T J = -40°C to +125°C T J = -40°C to +125°C T J = +125°C

C364/C36SA 100 Volts 100 Volts 200 Volts

C364/C36SB 200 200 300
C364/C36SC 300 300 400
C364/C36SD 400 400 SOO
C364/C36SE SOO SOO 600
C364/C36SM 600 600 720
C36SS 700 700 840
C36SN 800 800 960
1 Half sinewave waveform, 10 ms max. pulse width.

RMS On-State Current, IT(RMS)' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27S Amperes

Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 1800 Amperes
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (SO Hz) . . . . . . . . . . . . . . . . . . . . . . . . 1700 Amperes
12t (for fusing) for times;;;' 1.S milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 9,SOO (RMS Ampere)2 Seconds
I 2 t (for fusing) for times;;;' 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13,SOO (RMS Ampere)2 Seconds
Critical Rate-of-Rise of On-State Current, Non-Repetitive ...... . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 800 A/ps "I
Critical Rate-of-Rise of On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. SOO A/ps "I
Average Gate Power Dissipation, PG(A V) • . . . . . . . . . . . . . • . . . . . . . . . . . . . . • . . . • . . . . . . . . . . . . . . . • . 2 Watts
Storage Temperature, T stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40°C to +IS0°C
Operating Temperature, T J • • . • • • • . • • . . • • • . • • . • • • • • • . • . • • . . • • • • • . . . . . . • • • • • • . • . • • _40°C to +l 2S oC
Mounting Force Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 Lbs. ± 10%
3.S6 KN ± 10%

I tdijdt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts,
20 ohms gate trigger source with 0.5!1s short circuit trigger current rise time.

906
 I C364/C365
CHARACTERISTICS
TEST SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION
Repetitive Peak Reverse IRRM - S 12 rnA TJ = +2SoC
and Off-State CUlTent and
IDRM V = VDRM = VRRM
Repetitive Peak Reverse IRRM - 12 17 rnA T J = 12SoC
and Off-State Current and
IDRM V = V DRM = V RRM
Thermal Resistance ROJe .12 .13S DC/Watt Junction-to-Case (Double-Side Cooled)
.IS .26 Junction-to-Case (Single-Side Cooled)
Critical Rate-of-Rise of dv/dt 200 sao - V /Msec T J = + 12SoC, Gate Open. VDRM = Rated
Off-State Voltage Linear or Exponential Rising Waveform.
(Higher values may cause
device switching) Exponential dv/dt = VDRM (.632)/7
Higher minimum dv/dt selections available - consult factory.
Holding Current IH - 40 1000 mAdc Te = +2SoC, Anode Supply = 24 Vdc.
Initial On-State Current = 2 Amps.
DC Gate Trigger Current IGT 70 2S0 mAdc Te = +2SoC, V D = 6 Vdc, RL = 3 Ohms
- 100 400
~

Ie = -40°C, V D = 6 Vdc, RL = 3 Ohms

- 2S 17S Te = +12SoC, V D = 6Vdc, RL = 3 Ohms
DC Gate Trigger Voltage VGT - 3 S Vdc Te = -40°C to o°c, V D = 6 Vdc,
RL = 3 Ohms
- 1.2S 3.0 Te = O°c to +l2SoC, VD = 6 Vdc,
RL = 3 Ohms
0.15 - - Te = 12SoC, VDRM, RL = 1000 Ohms
Peak On-State Voltage VTM - 1.9 2.6 Volts Te = +2SoC, ITM = sao Amps. Peak
Duty Cycle < .01 %
Turn-On Delay Time td - O.S - Msec T e = +2SoC, IT = SO Adc, VDRM , Gate
Supply: 20 Volt Open Circuit, 20 Ohm,
0.1 Msec max. rise time. H, Ht
Conventional Circuit tq Msec (1) Te = +12SoC
Commutated Turn-Off (2) ITM = ISO Amps.
Time (with Reverse (3) V R = SO Volts Min.
Voltage) C364 8 10 (4) V DRM (Reapplied)
(S) Rate-of-Rise of Reapplied Off-State
Faster Maximum Turn- C36S - IS 20
Voltage = 200 V/Msec (linear)
Off Times Available,
(6) Commutation di/dt = 5 Amps/Msec.
Consult Factory
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
a Volts, lOa Ohms
Conventional Circuit tq(diode) Msec (1) Te = +12SoC
Commutated Turn-Off (2) ITlV! = ISO Amps.
Time (with Feedback (3) VR = 1 Volt
Diode) C364 IS t (4) V])f{M (Reapplied)
J. (S) Rate-of-Rise of Reapplied Forward
C36S 20 I Blocking Voltage = 200 V /Msec (linear)
(6) Commutation di/dt = S Amps/Msec
(7) Repetition Rate = I pss.
(8) Gate Bias During Turn-Off Interval =
a Volts, lOa Ohms.
tConsult factory for specified maximum Turn-Oft Time.
HDelay time may increase significantly as the gate drive approaches the IGT of the Device Under Test.
tttCurrent risetimc as measured with a current probe, or voltage risetime across a non-inductive resistor.

907
 C364/C365
5000
(/)
w
a::
w
a.
:::;;
A "
<t
I
....
z 1000
/; '/
w I
a:: I
a::
:::>
u
I
w
....
i'!
(/)

z0 125°C 25°C
100
(/)
:::>
0
w
Z
<t
....
z
i'!
(/)
~

2 3 4 5 6 7 8 9 10
INSTANTANEOUS ON-STATE VOLTAGE -VOLTS INSTANTANEOUS GATE CURRENT (AMPS)

1_ MAXIMUM ON-STATE CHARACTERISTICS 2_ GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

S!NE WAVE CURRENT RAT!NG DATA

3000
I
r---.. ~
til
a.
::E
2000
r-----.. ,0u( I
8~8
"r--,.
"'"
<t
I- --........,o~
"-....
0- ~
z
w
a: li88 "-
1;>8
~O
r--.. 0llt
a:
=>
u
700
600
"-
NIK
:'1-,0
500
" '200
--
~GO
......
w
0-
500
400
- 2.5 K
0)

Z
I 300
---r-- -------
5K

..'"
0
200
w 10K
a.

10010
20

20 30 405060 80 100
III 200 300 400 GOO 800 1000 2000 30004000 8000 10,000
PULSE BASE WIDTH-MICROSECONDS

3_ MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65°Cl

3000
til
a.
::E 2000
::. .............
I-
z
w
a:
a: 1000 r------ "- ,oU( 8~8 i"-r--,. "" ""
-
=>
u
800 " ,o~
.
w
0-
0-
600
1;>8
'-...~O
"-
D~O
0)
"-
:Z

.
0
:.:
400
1-1- I'-- IK 500
" "200
i'
60
300
w
a.
I I
---
I--it
2.5 K
-!-
200 -"" - -_of

I
I 5K
I
I
20 30 40 60 80 100 200 300 400 600 800 1000 2000 3000 6000 10,000
PULSE BASE WIDTH-MICROSECONDS

4. MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 9O°Cl

90B
 3000
C364/C365
........ NOTES:
~
~ ......... "- I
:i 2000 r-..... "- .......... t--.,
.......
25 WATT-SEC.
(Pertaining to Sine and Rectangular Wave Current Ratings)
-f- ...... 1'--... ~ i'
~
PU 1. Switching voltage = 400 volts.
I-
" " 10 2. Reverse voltage applied = VR ~ 600 volts.
r- - f - ~ ....... " K. ~
Z
W ...........

'" '-.... 3. Required gate drive:

0:
0: ""2.5
:::J 1~88 '-.... 20 volts, 65 ohms, 1 ~sec risetime for less than 100

-
u 1.0
w
I-

'"
I-
III
BOO
700
600
500
- ...... 1-
.......
.......
.25
"'-
.5
"'- " "-
"-
amps/~sec .
20 volts, 20 ohms, .5 ~sec risetime for greater than
100 amps/~sec.

'"
"-
"" "" l"'- "'-
I
Z
0

"'"
400
300 -- I---...... ......1'--- .05 " .1 t'. "'-
4. RC Snubber ckt. = 0.25 ~f, 5 n.
5. Double-Side Cooled.
~ ~
"-
W
0-
I'-.. .025
"" 6. Maximum energy dissipated during reverse recovery
200
r--- r-....
""l"'- 0-
~ ~
to be 15% of total W-S/P shown in W-S/P chart or

"" ""
~ i'---t--., ~ 0.03 W-S/P, whichever is least.

20 30 40 60 80 100
~ 200 300 400 600 800 1000 "" 2000 4000 6000
I'
10,000
7. Values of W-S/P are for Tj = 125°C.

PULSE BASE WIDTH-MICROSECONDS

5. ENERGY PER PULSE FOR SINUSOIDAL PULSES

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 50% DUTY CYCLE - 25%

1000 1000
900 900 I I I
800 I
I/l 800 I/l
w 700 w PULSES PER SECOND
0: 0: 700

- -
W UJ
::;; 600
0- 0-
::;; 600
r- 60 -
'"I 500
<1
I 500
l- f-.
400 -
I-
PULSES PER SECOND
I-
l- I- t--..
-----
Z Z
-
-
w 400 UJ 400 1000
0: 0:
60 ~r-....

--
0: 0:
::J
l- i- -
::J
r-.. I"--
1"-. r-... "'"
U U
300 400 300
w
l- r- I- r--I-t-- w
l- 2500
r- ~ i'!

--- r--.
i'! l- I- 1000
'f
z 200 r-
'f
z 200
r-...
0
'"' 2500
0

" 1"-1"-
'"" 5000
<1
W
0- I"-- l"- W
a.
I"-- 1"-1-
5000
100 100
~ 00 10 100
RATE OF RISE OF ON-STATE CURRENT-AMPERES RATE OF RISE OF ON-STATE CURRENT-AMPERES
PER MICROSECONDS
PER MICROSECONDS

6. MAXIMUM ALLOWABLE PEAK ON-STATE 8. MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65°CI CURRENT VS. di/dt (Tc = 65°CI

1000 1000
900 900
I/l 800 I/l 800
w 700 UJ
0: 0: 700
W w I I I I
a.
::;; 600 -
0-
600
<1
500
::;;
"i'
r- PULSES PER
SECOND
I
I-
500
I-

-
Z

---
Z w I"- 60 _
w 400 400

--
a: 0:

----
0: 0:
I-f-.
---
::J ::J
U U I- 400
300 300
UJ w
I- I- f-.I-
<1
I- PULSES PER SECOND ~ 1000
I/l
Z 200
~o
I/l
z
I
200 r---
- -
::> - 0 I""-- I---
" r--I-
<1
UJ
I- l- r-- f- 1000 "
<1
li
2500
0- i- I-r-- L

100
10
r---
i - - 2500
100
RATE OF RISE OF ON-STATE CURRENT-AMPERES

7. MAXIMUM ALLOWABLE PEAK ON-STATE

PER MICROSECONDS
100
~
RATE OF RISE OF ON-STATE CURRENT-AMPERES
PER MICROSECONDS

9. MAXIMUM ALLOWABLE PEAK ON-STATE

~

I
CURRENT VS. di/dt (Tc = 90°CI CURRENT VS. di/dt (Tc = 90°CI

909
 C364/C365
WATT-SECOND PER PULSE

I I

10. ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 100 A/j1sec)

PULSE BASE WIDTH -MICROSECONDS

~" ~~"4;-"-
"f',

1000

"-
"" "- "-~s
I'.
<S'' '
S-~"l;7~

"-
11. ENERGY PER PULSE VS. PEAK CURRENT
AND PULSE WIDTH (di/dt = 25 A/j1sec)

" "
/

i'-..
I'

'" 1\ ~ ~
"-
~
"-
"-
's
'" "-
""
N's

~ ~
I' I'
100
10 100
PULSE BASE WIDTH-MICROSECONDS
1000
'" 10K

12. ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/j1sec)

I I' ~ ~"'~ 1Ft ~ "'~

I~O~--~--L-~-W~loo~--~~~~wwuIOOO~--~~~~LL~'OK

PULSE BASE WIDTH-MICROSECONDS

910
-----,- 20,000 I C364/C365
u
w 15,000
en, ~
oJ

~~<t

,
10,000
~

0E.~
If)
:IE 8,000
~ E.- SI
6,000

INITIAL TJ = -40°C TO +125°C I V ~I _SlOE. COOLED

---
Wen 4,000 V 'oOueLE
!-w
<to:
r- L V
u..!-w
~~~
:r:o<!
3,000
--. r-. ~ i-'"
~w ~ ~ r-.. V
«~ z 2,000
l"'- I'- ~~
~~~ i"'" -'
zO:
-::J
enu Vi'"
--*-- 1,000
\.5 2 3 4 6 8 10
.0 I
.001 .01 10 100
PULSE BASE WIOTH - MILLISECONDS TIME - SECONDS

13. SUB-CYCLE SURGE (NON-REPETITIVE) 14. TRANSIENT THERMAL IMPEDANCE -

ON-STATE CURRENT AND 12 t RATING JUNCTION-TO-CASE

OUTLINE DRAWING

TABLE OF DIMENSIONS
Conversion Table

f) AUX.
CATHODE
RED
SYM
A
DECIMAL INCHES
MIN
.744
MAX.
.752
METRIC MM
MIN.
18.897
MAX.
19.101

f
B .030 .060 .762 1.524
R-DIA. C .515 .565 13.081 14.351
S-DEEP 0 1.600 1.656 40.64 42.06
P E .110 - 2.794 -
F .031 .017 .330 .432
G .057 .059 1.447 1.449
H 7.980 8.115 202.70 206.11
J - .300 - 7.620
K .137 .153 3.479 3.886
L .065 .070 1.651 1.778
M .245 .260 6.223 6.604
N .120 .140 3.048 3.556
P 1.090 1.125 27.69 28.55

\4-------0
-- R
S
T
U
.135
.067
.340
.186
.145
.083
-
.189
3.429
1.701
8.636
4.724
3.683
2.108

4.801
-
H
B

ACCEPTS AMP.
TERMINAL # 60598-1
l-- A B
TYP.
OR EQUIVALENT
H - STRAIGHT LEAD LENGTH, TYP. 2 LEADS
T - SURFACE CREEPAGE

911