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SEMICONDUCTOR TECHNICAL DATA by MRF284/D


The RF Sub–Micron MOSFET Line
    
N–Channel Enhancement–Mode Lateral MOSFETs 
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio 30 W, 2000 MHz, 26 V
and wireless local loop. LATERAL N–CHANNEL
BROADBAND
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
RF POWER MOSFETs
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = –29 dBc
• Typical Single–Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
CASE 360B–01, STYLE 1
• Characterized with Series Equivalent Large–Signal Impedance Parameters (MRF284)
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
CASE 360C–03, STYLE 1
(MRF284S)
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS ± 20 Vdc
Total Device Dissipation @ TC = 25°C PD 87.5 Watts
Derate above 25°C 0.5 W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ 200 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.0 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current IDSS — — 1.0 µAdc
(VDS = 20 Vdc, VGS = 0)
Gate–Source Leakage Current IGSS — — 10 µAdc
(VGS = 20 Vdc, VDS = 0)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 3

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997 MRF284 MRF284S
1
This datasheet has been downloaded from http://www.digchip.com at this page
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 Vdc
(VDS = 10 Vdc, ID = 150 µAdc)
Gate Quiescent Voltage VGS(q) 3.0 4.0 5.0 Vdc
(VDS = 26 Vdc, ID = 200 mAdc)
Drain–Source On–Voltage VDS(on) — 0.3 0.6 Vdc
(VGS = 10 Vdc, ID = 1.0 Adc)
Forward Transconductance gfs 1.0 1.5 — S
(VDS = 10 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 43 — pF
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance Coss — 23 — pF
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss — 1.4 — pF
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (in Motorola Test Fixture)

Common–Source Power Gain Gps 9 10.5 — dB
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency η 30 35 — %
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion IMD — –32 –29 dBc
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss IRL 9 15 — dB
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Amplifier Power Gain Gps 9 10.4 — dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency η — 35 — %
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion IMD — –34 — dBc
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss IRL 9 15 — dB
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Amplifier Power Gain Gps 8.5 9.5 — dB
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Drain Efficiency η 35 45 — %
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Output Mismatch Stress Ψ
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
No Degradation In Output Power
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)

MRF284 MRF284S MOTOROLA RF DEVICE DATA

2
VGG(BIAS) B1 B2 B3 B4 B5 B6 VDD(DCSupply)
+ +
+ +
C1 R1 C4 R2 C7 R3 C5 C8 C13 C15 R4 C12 R5 C14 R6 C17
_
–

L3
L4
RF
OUTPUT
L1 L2 Z9 Z10 Z11 Z12 Z13 Z14 Z15
RF
INPUT DUT C16
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
C10 C11
C6
C2 C3 C9

B1 – B6 Ferrite Bead, Round Z3 0.185″ x 0.080″ Microstrip

C1, C17 470 µF, 63 V, Mallory Electrolytic Capacitor Z4 0.395″ x 0.080″ Microstrip
C2 0.6 – 4.5 pF Johansen Gigatrim Variable Capacitors Z5 0.490″ x 0.080″ Microstrip
C3, C9 0.8 – 8.0 pF Johansen Gigatrim Variable Capacitors Z6 0.035″ x 0.325″ Microstrip
C4, C14 0.1 µF Chip Capacitor, KEMET Z7 0.240″ x 0.325″ Microstrip
C5, C15 91 pF ATC RF Chip Capacitors, Case “B” Z8 0.210″ x 0.515″ Microstrip
C6, C16 10 pF ATC RF Chip Capacitors, Case “B” Z9 0.130″ x 0.515″ Microstrip
C7, C12 1000 pF ATC RF Chip Capacitors, Case “B” Z10 0.080″ x 0.515″ Microstrip
C8, C13 5.1 pF ATC RF Chip Capacitors, Case “B” Z11 0.190″ x 0.325″ Microstrip
C10 2.7 pF ATC RF Chip Capacitors, Case “B” Z12 0.090″ x 0.325″ Microstrip
C11 0.4 – 2.5 pF Johansen Gigatrim Variable Capacitors Z13 0.515″ x 0.080″ Microstrip
L1 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH Z14 0.860″ x 0.080″ Microstrip
L2, L3 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH Z15 0.510″ x 0.080″ Microstrip
L4 2 Turns, #24 AWG, 0.85″ OD, 0.042″ ID, 0.064″ Long, 5.2 nH Board 0.030″ Glass Teflon, 2 oz Copper,
R1 – R6 12 Ω Fixed Film Chip Resistor 0.08″ x 0.13″ 3 x 5″ Dimensions, Manufacturer;
Z1 0.145″ x 0.080″ Microstrip Arlon, P/N: GX0300–55–22, εr = 2.55
Z2 0.680″ x 0.080″ Microstrip

Figure 1. Schematic of 1.93–2.0 GHz Broadband Test Circuit

MOTOROLA RF DEVICE DATA MRF284 MRF284S

3
VSUPPLY
+
+
R1 C1
R3
+ B3 B4 B5 VDD
P1 VDD
B1 B2 +
Q1 +
+ R9 R10 R11
R6 C11 C13 C10 C15 C16
R2 R4 Q2 R5 C9 C7 R7 C8
R8 C2 C4

L4
RF
OUTPUT
L1 L3 Z10 Z11 Z12 Z13 Z14 Z15 Z16
RF
INPUT DUT C14
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
C12 C17
C3
L2 C5 C6

B1 – B5 Ferrite Bead, Round R5 2 x 1500 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″
C1, C9, C16 100 µF, 50 V, Electrolytic Capacitor, Sprague R6 270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″
C2, C13 51 pF, ATC RF Chip Capacitors, Case “B” R7 – R11 12 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″
C3, C14 10 pF, ATC RF Chip Capacitors, Case “B” Z1 0.363″ x 0.080″ Microstrip
C4, C11 12 pF, ATC RF Chip Capacitors, Case “B” Z2 0.080″ x 0.080″ Microstrip
C5 0.8 – 8.0 pF Variable Capacitor, Johansen Gigatrim Z3 0.916″ x 0.080″ Microstrip
C6 4.7 pF, ATC RF Chip Capacitor, Case “B” Z4 0.517″ x 0.080″ Microstrip
C7, C15 91 pF, ATC RF Chip Capacitors, Case “B” Z5 0.050″ x 0.325″ Microstrip
C8 1000 pF, ATC RF Chip Capacitor, Case “B” Z6 0.050″ x 0.325″ Microstrip
C10 0.1 µF, Chip Capacitor, KEMET Z7 0.071″ x 0.325″ Microstrip
C12, C17 0.6 – 4.5 pF, Variable Capacitors, Johansen Gigatrim Z8 0.125″ x 0.325″ Microstrip
L1 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, Z9 0.210″ x 0.515″ Microstrip
0.069″ Long, 10 nH Z10 0.210″ x 0.515″ Microstrip
L2 5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, Z11 0.235″ x 0.325″ Microstrip
0.128″ Long, 12.5 nH Z12 0.02″ x 0.325″ Microstrip
L3, L4 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, Z13 0.02″ x 0.325″ Microstrip
0.170″ Long, 30.8 nH Z14 0.510″ x 0.080″ Microstrip
P1 1000 Ohm Potentiometer, 1/2 W, 10 Turns Z15 0.990″ x 0.080″ Microstrip
Q1 Transistor, NPN, Motorola P/N: MJD31, Case 369A–10 Z16 0.390″ x 0.080″ Microstrip
Q2 Transistor, PNP, Motorola P/N: MJD32, Case 369A–10 Raw PCB
R1 360 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″ Material 0.030″ Glass Teflon, 2 oz Copper,
R2 2 x 12 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″ 3 x 5″ Dimensions, Manufacturer;
R3 1 Ω, Wirewound, 5 W, 3% Resistor Arlon, P/N: GX–0300–55–22, εr = 2.55
R4 4 x 6.8 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″

Figure 2. Schematic of 2.0 GHz Class A Test Circuit

MRF284 MRF284S MOTOROLA RF DEVICE DATA

4
 TYPICAL CHARACTERISTICS

40 14 45
Pout 4W
35 13 40
Pout , OUTPUT POWER (WATTS)

POWER (WATTS)
3W
30 12
35

G pe , GAIN (dB)
25 11 2W
30
20 10

OUTPUT
Gpe 25
15 9 Pin = 1 W
20
10 8

Pout ,
VDD = 26 Vdc VDD = 26 Vdc
5 IDQ = 200 mA 7 15 IDQ = 200 mA
f = 2000 MHz Single Tone Single Tone
0 6 10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000
Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 3. Output Power & Power Gain Figure 4. Output Power versus Frequency
versus Input Power

– 20 12 –10

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc
IDQ = 200 mA
– 30 f = 2000.0 MHz 11 –15
1
f2 = 2000.1 MHz Gpe
– 40 10 –20
G pe , GAIN (dB)

3rd Order
– 50 9 –25

5th Order
– 60 8 –30
Pout = 30 W (PEP)
7th Order
– 70 7 IDQ = 200 mA IMD –35
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 80 6 –40
0.1 1.0 10 16 18 20 22 24 26 28
Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN SUPPLY VOLTAGE (Vdc)

Figure 5. Intermodulation Distortion Figure 6. Power Gain and Intermodulation

versus Output Power Distortion versus Supply Voltage

– 20 13
IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc IDQ = 400 mA

f1 = 2000.0 MHz
300 mA
f2 = 2000.1 MHz 12
G pe , POWER GAIN (dB)

– 30
100 mA 200 mA
11
– 40 300 mA
10
200 mA
– 50
9 100 mA VDD = 26 Vdc
IDQ = 400 mA f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 60 8
0.1 1.0 10 0.1 1.0 10
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Figure 7. Intermodulation Distortion Figure 8. Power Gain versus Output Power

versus Output Power

MOTOROLA RF DEVICE DATA MRF284 MRF284S

5
 TYPICAL CHARACTERISTICS

3 100
Tflange = 75°C Ciss
ID, DRAIN CURRENT (Adc)

Tflange = 100°C

C, CAPACITANCE (pF)
2 Coss

10

TJ = 175°C Crss

0 1
0 4 8 12 16 20 24 28 0 4 8 12 16 20 24 28
VDD, DRAIN SUPPLY VOLTAGE (Vdc) VDS, DRAIN SOURCE VOLTAGE (VOLTS)

Figure 9. DC Safe Operating Area Figure 10. Capacitance versus

Drain Source Voltage

60
50
40 FUNDAMENTAL
Pout , OUTPUT POWER (dBm)

30
20
10
0
–10 3rd Order
– 20
– 30
– 40
– 50 VDD = 26 Vdc
– 60 IDQ = 1.8 Adc
–70 f1 = 2000.0 MHz
– 80 f2 = 2000.1 MHz
– 90
0 5 10 15 20 25 30 35 40 45 50 55 60
Pin, INPUT POWER (dBm)

Figure 11. Class A Third Order Intercept Point

MRF284 MRF284S MOTOROLA RF DEVICE DATA

6
 TYPICAL CHARACTERISTICS

11 45

EFFICIENCY (%)
GAIN
10 40

9 35
η
Pout = 30 Watts (PEP)

Gp , GAIN (dB)
8 30
VDD = 26 Vdc, IDQ = 200 mA
7 Two–Tone –32 3.0
Frequency Delta = 100 kHz

INTERMODULATION
DISTORTION (dBc)

INPUT VSWR
6
IMD
5 –36 2.0

4
VSWR
3 –40 1.0
1920 1940 1960 1980 2000
f, FREQUENCY (MHz)

Figure 12. 1.92–2.0 GHz Broadband Circuit Performance

1.E+10
MTBF FACTOR (HOURS x AMPS 2 )

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

1.E+04
0 50 100 150 200 250
TJ, JUNCTION TEMPERATURE (°C)
This graph displays calculated MTBF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than ±10%
of the theoretical prediction for metal failure. Divide MTBF factor by ID2
for MTBF in a particular application.

Figure 13. MTBF Factor versus Junction Temperature

MOTOROLA RF DEVICE DATA MRF284 MRF284S

7
 + j1

+ j0.5 + j2

+ j3

Zin
2 GHz
+ j0.2 + j5

+ j10
Zo = 1 Ω
f = 1.8 GHz 2 GHz

0.2 0.5 1 2 3 5
0.0
ZOL*
f = 1.8 GHz
– j10

– j0.2 – j5

– j3

– j2
– j0.5

– j1

VCC = 26 V, ICQ = 200 mA, Pout = 15 Wavg

f Zin(1) ZOL*
MHz Ω Ω

1800 1.0 + j0.4 2.1 – j0.4

1860 1.0 + j0.8 2.2 + j0.2

1900 1.0 + j1.1 2.3 + j0.5

1960 1.0 + j1.4 2.5 + j0.9

2000 1.0 + j2.3 2.6 + j0.92

Zin(1)= Conjugate of fixture base terminal impedance.

ZOL* = Conjugate of the optimum load impedance at

given output power, voltage, bias current and
frequency.

Figure 14. Series Equivalent Input and Output Impedence

MRF284 MRF284S MOTOROLA RF DEVICE DATA

8
 Table 1. Common Source S–Parameters at VDS = 26 Vdc, ID = 1.8 Adc

f S11 S21 S12 S22

GHz
GH |S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f
1.0 0.902 –170 1.10 28 0.005 60 0.913 –162
1.1 0.934 –167 0.92 26 0.006 82 0.921 –163
1.2 0.948 –167 0.85 24 0.007 89 0.924 –164
1.3 0.957 –169 0.73 21 0.009 94 0.929 –165
1.4 0.959 –169 0.68 19 0.011 94 0.931 –165
1.5 0.960 –170 0.59 17 0.014 94 0.933 –167
1.6 0.958 –172 0.53 14 0.015 92 0.936 –168
1.7 0.958 –172 0.50 13 0.016 93 0.936 –169
1.8 0.956 –174 0.45 10 0.019 92 0.937 –170
1.9 0.954 –175 0.43 8 0.020 90 0.937 –171
2 0.944 –177 0.39 6 0.023 82 0.937 –173
2.1 0.934 –177 0.38 4 0.023 72 0.935 –174
2.2 0.935 –178 0.35 –1 0.013 72 0.932 –176
2.3 0.945 180 0.31 –4 0.016 116 0.925 –179
2.4 0.944 178 0.30 –5 0.023 112 0.930 –179
2.5 0.946 177 0.29 –7 0.024 105 0.935 179
2.6 0.941 174 0.25 –11 0.025 112 0.930 176

MOTOROLA RF DEVICE DATA MRF284 MRF284S

9
 NOTES

MRF284 MRF284S MOTOROLA RF DEVICE DATA

10
 PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G
1
INCHES MILLIMETERS
–B– DIM MIN MAX MIN MAX
A 0.790 0.810 20.07 20.57
3 B 0.220 0.240 5.59 6.09
C 0.125 0.175 3.18 4.45
D 0.205 0.225 5.21 5.71
2 Q 2 PL E 0.050 0.070 1.27 1.77
0.25 (0.010) M T A M B M F 0.004 0.006 0.11 0.15
K G 0.562 BSC 14.27 BSC
D
H 0.070 0.090 1.78 2.29
F C K 0.215 0.255 5.47 6.47
H E N N 0.350 0.370 8.89 9.39
Q 0.120 0.140 3.05 3.55
SEATING
–T– PLANE STYLE 1:
PIN 1. DRAIN
–A– 2. GATE
3. SOURCE
CASE 360B–01
ISSUE O
(MRF284)

1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
–B– Y14.5M, 1982.
2 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
K DIM MIN MAX MIN MAX
D
A 0.370 0.390 9.40 9.91
B 0.220 0.240 5.59 6.09
C 0.105 0.155 2.67 3.94
D 0.205 0.225 5.21 5.71
E E 0.035 0.045 0.89 1.14
N F F 0.004 0.006 0.11 0.15
H H 0.057 0.067 1.45 1.70
K 0.085 0.115 2.16 2.92
3 C –T– N 0.350 0.370 8.89 9.39
SEATING
PLANE

–A–
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360C–03
ISSUE B
(MRF284S)

MOTOROLA RF DEVICE DATA MRF284 MRF284S

11
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MRF284 MRF284S MOTOROLA RF DEVICEMRF284/D

DATA
12