LT1010

Fast ±150mA Power Buffer

U
FEATURES DESCRIPTIO
■ 20MHz Bandwidth The LT®1010 is a fast, unity-gain buffer that can increase
■ 75V/µs Slew Rate the output capability of existing IC op amps by more than
■ Drives ±10V Into 75Ω an order of magnitude. This easy-to-use part makes fast
■ 5mA Quiescent Current amplifiers less sensitive to capacitive loading and reduces
■ Drives Capacitive Loads > 1µF thermal feedback in precision DC amplifiers.
■ Current and Thermal Limit
Designed to be incorporated within the feedback loop, the
■ Operates from Single Supply ≥ 4.5V buffer can isolate almost any reactive load. Speed can be
■ Very Low Distortion Operation improved with a single external resistor. Internal operat-
U ing currents are essentially unaffected by the supply
APPLICATIO S voltage range. Single supply operation is also practical.
■ Boost Op Amp Output This monolithic IC is supplied in an 8-pin miniDIP and the
■ Isolate Capacitive Loads plastic TO-220. The low thermal resistance power pack-
■ Drive Long Cables age is an aid in reducing operating junction temperatures.
■ Audio Amplifiers , LTC and LT are registered trademarks of Linear Technology Corporation.
■ Video Amplifiers
■ Power Small Motors
■ Operational Power Supply
■ FET Driver

U
TYPICAL APPLICATIO
Very Low Distortion Buffered Preamplifier

V+
18V 0.4
C2 VOUT = 10VP-P
22pF R7 RL = 400Ω
50Ω
HARMONIC DISTORTION (%)

R1 0.3
1k V+
3 7 R6 R8
+ BOOST
6 100Ω IN OUT 100Ω
LT1056CN8 LT1010CT OUTPUT
R2 C1 0.2
2
1M 22pF
R3
– 4 R4 V–
1k 10k
V+ 0.1

LM334
NOTE 1: ALL RESISTORS 1% METAL FILM RSET
NOTE 2: SUPPLIES WELL BYPASSED AND LOW ZO 33.2Ω 0
ISET = 2mA V –
1% 10 100 1k 10k 100k
V+ 1010 TA01
FREQUENCY (Hz)
–18V 1010 TA02

This datasheet has been downloaded from http://www.digchip.com at this page

1
LT1010
W W W U
ABSOLUTE AXI U RATI GS (Note 1)
Total Supply Voltage .............................................. ±22V Storage Temperature Range ................. – 65°C to 150°C
Continuous Output Current .............................. ±150mA Lead Temperature (Soldering, 10 sec).................. 300°C
Continuous Power Dissipation (Note 2)
LT1010CN8 .................................................... 0.75W U UU
LT1010CT ......................................................... 4.0W PRECO DITIO I G
Input Current (Note 3) ....................................... ±40mA 100% Thermal Limit Burn In
Operating Junction Temperature Range
LT1010C ............................................... 0°C to 125°C

U W U
PACKAGE/ORDER I FOR ATIO
TOP VIEW ORDER PART FRONT VIEW ORDER PART
V+ 1 8 INPUT
NUMBER 5 OUTPUT NUMBER
4 BIAS
BIAS 2 7 NC
LT1010CN8 V– 3 V – (TAB) LT1010CT
OUT 3 6 V–
2 V+
NC 4 5 NC 1 INPUT

N8 PACKAGE T PACKAGE
8-LEAD PDIP 5-LEAD PLASTIC TO-220

TJMAX = 100°C, θJA = 130°C/W TJMAX = 125°C, θJC = 25°C/W

Consult LTC Marketing for parts specified with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS The ● indicates specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (See Note 4. Typical values in curves)
SYMBOL PARAMETER CONDITIONS (Note 4) MIN TYP MAX UNITS
VOS Output Offset Voltage (Note 4) 0 150 mV
● –20 220 mV
VS = ±15V, VIN = 0V 20 100 mV
IB Input Bias Current IOUT = 0mA 0 250 µA
IOUT ≤ 150mA 0 500 µA
● 0 800 µA
AV Large-Signal Voltage Gain ● 0.995 1.00 V/V
ROUT Output Resistance IOUT = ±1mA 5 10 Ω
IOUT = ±150mA 5 10 Ω
● 12 Ω
Slew Rate VS = ±15V, VIN = ±10V, 75 V/µs
VOUT = ±8V, RL = 100Ω
VSOS+ Positive Saturation Offset IOUT = 0 (Note 5) 1.0 V
● 1.1 V
VSOS– Negative Saturation Offset IOUT = 0 (Note 5) 0.2 V
● 0.3 V
RSAT Saturation Resistance IOUT = ±150mA (Note 5) 22 Ω
● 28 Ω

2
 LT1010
ELECTRICAL CHARACTERISTICS The ● indicates specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (See Note 4. Typical values in curves)
SYMBOL PARAMETER CONDITIONS (Note 4) MIN TYP MAX UNITS
VBIAS Bias Terminal Voltage RBIAS = 20Ω (Note 6) 700 840 mV
● 560 880 mV
IS Supply Current IOUT = 0, IBIAS = 0 9 mA
● 10 mA

Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: For case temperatures above 25°C, dissipation must be derated
based on a thermal resistance of 25°C/W for the T package and 130°C/W
for the N8 package for ambient temperatures above 25°C. See Applications
Information.
Note 3: In current limit or thermal limit, input current increases sharply
with input-output differentials greater than 8V; so input current must be
limited. Input current also rises rapidly for input voltages 8V above V + or
0.5V below V –.
Note 4: Specifications apply for 4.5V ≤ VS ≤ 40V,
V – + 0.5V ≤ VIN ≤ V + – 1.5V and IOUT = 0, unless otherwise stated.
Temperature range is 0°C ≤ TJ ≤ 125°C, TC ≤ 100°C.
Note 5: The output saturation characteristics are measured with 100mV
output clipping. See Applications Information for determining available
output swing and input drive requirements for a given load.
Note 6: For the TO-220 package, the output stage quiescent current can be
increased by connecting a resistor between the BIAS pin and V +. The
increase is equal to the bias terminal voltage divided by this resistance.

U W
TYPICAL PERFOR A CE CHARACTERISTICS
Bandwidth Phase Lag Phase Lag
50 50 50

RL = 200Ω
40
PHASE LAG (DEGREES)

PHASE LAG (DEGREES)

FREQUENCY (MHz)

30 RL = 50Ω 20 20
RL = 50Ω RL = 50Ω RL = 200Ω
RL = 200Ω
20
10 10
VIN = 100mVP-P CL = 100pF CL = 100pF
10 CL 100pF RS = 50Ω RS = 50Ω
AV = –3dB IBIAS = 0 RBIAS = 20Ω
TJ = 25°C TJ = 25°C TJ = 25°C
0 5 5
0 10 20 30 40 2 5 10 20 2 5 10 20
QUIESCENT CURRENT (mA) FREQUENCY (MHz) FREQUENCY (MHz)
1010 G01 1010 G02 1010 G03

Small-Step Response Output Impedance Capacitive Loading

150 100 10
RL = 100Ω IBIAS = 0 RS = 50Ω
TJ = 25°C TJ = 25°C IBIAS = 0
100 TJ = 25°C
OUTPUT IMPEDANCE (Ω)
VOLTAGE CHANGE (mV)

VOLTAGE GAIN (dB)

50 0
INPUT OUTPUT 3nF 100pF
0 10

–50 –10
0.1µF
–100

–150 1 –20
0 10 20 30 0.1 1 10 100 0.1 1 10 100
TIME (ns) FREQUENCY (MHz) FREQUENCY (MHz)
1010 G04 1010 G05
1010 G06

3
 LT1010
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Slew Response Negative Slew Rate Supply Current
20 400 80
VS = ±15V VS = ±15V
15 0 ≥ VIN ≥ –10V VIN = ±10V
IL = 0
POSITIVE RL = 200Ω TC = 25°C
10 300 60

SUPPLY CURRENT (mA)

OUTPUT VOLTAGE (V)

SLEW RATE (V/µs)

RL = 100Ω
5 VS = ±15V
RL = 100Ω
0 IBIAS = 0 TJ = 25°C 200 40
RL = 50Ω
f ≤ 1MHz
–5
NEGATIVE
–10 100 20
RBIAS = 20Ω
–15

–20 0 0
–50 0 50 100 150 200 250 0 10 20 30 40 0 1 2 3 4 5
TIME (ns) QUIESCENT CURRENT (mA) FREQUENCY (MHz)
1010 G07 1010 G08 1010 G09

Output Offset Voltage Input Bias Current Input Bias Current

200 200 200
VIN = 0 VIN = 0 VS = ±15V
RL = 75Ω

150 150 150

OFFSET VOLTAGE (mV)

BIAS CURRENT (µA)

BIAS CURRENT (µA)

TJ = 125°C
V + = 38V
V + = 38V V – = –2V
– TJ = 25°C
V = –2V
100 100 100

V + = 2V TJ = –55°C
V – = –38V V + = 2V
50 50 V – = –38V 50

0 0 0
–50 0 50 100 150 –50 0 50 100 150 –150 –100 –50 0 50 100 150
TEMPERATURE (°C) TEMPERATURE (°C) OUTPUT CURRENT (mA)
1010 G10 1010 G10 1010 G12

Voltage Gain Output Resistance Output Noise Voltage

1.000 12 200
IOUT = 0 IOUT ≤ 150mA TJ = 25°C

10
VS = 40V
OUTPUT RESISTANCE (Ω)

NOISE VOLTAGE (nV/√Hz)

150
0.999 8
GAIN (V/V)

6 100
VS = 4.5V
0.998 4 RS = 1k
50
2 RS = 50Ω

0.997 0 0
–50 0 50 100 150 –50 0 50 100 150 10 100 1k 10k
TEMPERATURE (°C) TEMPERATURE (°C) FREQUENCY (Hz)
1010 G13 1010 G14 1010 G15

4
 LT1010
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Positive Saturation Voltage Negative Saturation Voltage Supply Current
4 4 7
VIN = 0
IOUT = 0
IBIAS = 0 TJ = –55°C
IL = 150mA IL = –150mA

SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

SUPPLY CURRENT (mA)

3 3 6

TJ = 25°C
2 2 5
IL = 50mA IL = –50mA

IL = 5mA IL = –5mA TJ = 125°C

1 1 4

0 0 3
–50 0 50 100 150 –50 0 50 100 150 0 10 20 30 40
TEMPERATURE (°C) TEMPERATURE (°C) TOTAL SUPPLY VOLTAGE (V)
1010 G16 1010 G16 1010 G18

Bias Terminal Voltage Total Harmonic Distortion Total Harmonic Distortion

1.0 0.4 0.8
VS = ±20V RL = 50Ω IBIAS = 0
f = 10kHz VS = ±15V
0.9 VS = ±15V VOUT = ±10V
BIAS TERMINAL VOLTAGE (V)

HARMONIC DISTORTION (%)

HARMONIC DISTORTION (%)

0.3 TC = 25°C 0.6 TC = 25°C

0.8
RBIAS = 100Ω
0.2 0.4
RBIAS = 20Ω IBIAS = 0 RBIAS = 50Ω
0.7 RL = 50Ω

0.1 0.2 RL = 100Ω

0.6

0.5 0 0
–50 0 50 100 150 0.1 1 10 100 1 10 100 1000
TEMPERATURE (°C) OUTPUT VOLTAGE (VP-P) FREQUENCY (kHz)
1010 G19 1010 G20 1010 G21

Shorted Input Characteristics Peak Power Capability Peak Output Current

50 10 0.5
VS = ±15V TC = 85°C VS = ±15V
VOUT = 0 VOUT = 0
TJ = 25°C 8 0.4
25 SINK
OUTPUT CURRENT (A)
INUPT CURRENT (mA)

PEAK POWER (W)

6 0.3
SOURCE
0
TO-220
4 0.2

–25
2 0.1

–50 0 0
–15 –10 –5 0 5 10 15 1 10 100 –50 0 50 100 150
INPUT VOLTAGE (V) PULSE WIDTH (ms) TEMPERATURE (°C)
1010 G23
1010 G22 1010 G24

5
LT1010
U U W U
APPLICATIO S I FOR ATIO
General idealized buffer with the unloaded gain specified for the
LT1010. Otherwise, it has zero offset voltage, bias current
These notes briefly describe the LT1010 and how it is
and output resistance. Its output also saturates to the
used; a detailed explanation is given elsewhere1. Empha-
sis here will be on practical suggestions that have resulted internal supply terminals2.
from working extensively with the part over a wide range V+
of conditions. A number of applications are also outlined
that demonstrate the usefulness of the buffer beyond that VSOS+
IB
of driving a heavy load. R′

VOS
ROUT
Design Concept INPUT
+ A1 OUTPUT

The schematic below describes the basic elements of the

R′ R′ = RSAT – ROUT
buffer design. The op amp drives the output sink transis-
tor, Q3, such that the collector current of the output VSOS–

follower, Q2, never drops below the quiescent value (de- V– 1010 AI02

termined by I1 and the area ratio of D1 and D2). As a result,

Loaded voltage gain can be determined from the unloaded
the high frequency response is essentially that of a simple
gain, AV, the output resistance, ROUT, and the load resis-
follower even when Q3 is supplying the load current. The
tance, RL, using:
internal feedback loop is isolated from the effects of
capacitive loading by a small resistor in the output lead.
A VRL
A VL =
V+
ROUT + RL
D1 D2
BIAS
Maximum positive output swing is given by:

( V + – VSOS+ )RL
– I2
+
+
Q2 VOUT =
A1
RSAT + RL
Q1 INPUT
R1
I1 OUTPUT The input swing required for this output is:
Q3
+  R 
V– VIN = VOUT +  1 + OUT  – VOS + ∆VOS
 RL 
1010 AI01

The scheme is not perfect in that the rate of rise of sink
current is noticeably less than for source current. This can
be mitigated by connecting a resistor between the bias
terminal and V +, raising quiescent current. A feature of the
final design is that the output resistance is largely indepen-
dent of the follower quiescent current or the output load
current. The output will also swing to the negative rail,
which is particularly useful with single supply operation.
Equivalent Circuit
Below 1MHz, the LT1010 is quite accurately represented
by the equivalent circuit shown here for both small- and
large-signal operation. The internal element, A1, is an
where ∆VOS is the 100mV clipping specified for the
saturation measurements. Negative output swing and
input drive requirements are similarly determined.
Supply Bypass
The buffer is no more sensitive to supply bypassing than
slower op amps as far as stability is concerned. The 0.1µF
disc ceramic capacitors usually recommended for op
amps are certainly adequate for low frequency work. As
always, keeping the capacitor leads short and using a
1R. J. Widlar, “Unique IC Buffer Enhances Op Amp Designs; Tames Fast Amplifiers,”
Linear Technology Corp. TP-1, April, 1984.
2See electrical characteristics section for guaranteed limits.

6

U U W U
APPLICATIO S I FOR ATIO
ground plane is prudent, especially when operating at high
frequencies.
The buffer slew rate can be reduced by inadequate supply
bypass. With output current changes much above
100mA/µs, using 10µF solid tantalum capacitors on both
supplies is good practice, although bypassing from the
positive to the negative supply may suffice.
When used in conjunction with an op amp and heavily
loaded (resistive or capacitive), the buffer can couple into
supply leads common to the op amp causing stability
problems with the overall loop and extended settling time.
Adequate bypassing can usually be provided by 10µF solid
tantalum capacitors. Alternately, smaller capacitors could
be used with decoupling resistors. Sometimes the op amp
has much better high frequency rejection on one supply,
so bypass requirements are less on this supply.
Power Dissipation
In many applications the LT1010 will require heat sink-
ing. Thermal resistance, junction to still air is 100°C/W
for the TO-220 package and 130°C/W for the miniDIP
package. Circulating air, a heat sink or mounting the
package to a printed circuit board will reduce thermal
resistance.
In DC circuits, buffer dissipation is easily computed. In AC
circuits, signal waveshape and the nature of the load
determine dissipation. Peak dissipation can be several
times average with reactive loads. It is particularly impor-
tant to determine dissipation when driving large load
capacitance.
With AC loading, power is divided between the two output
transistors. This reduces the effective thermal resistance,
junction to case to 15°C/W for the TO-220 package as long
as the peak rating of neither output transistor is exceeded.
The typical curves indicate the peak dissipation capabili-
ties of one output transistor.
Overload Protection
The LT1010 has both instantaneous current limit and
thermal overload protection. Foldback current limiting has
not been used, enabling the buffer to drive complex loads
LT1010
without limiting. Because of this, it is capable of power
dissipation in excess of its continuous ratings.
Normally, thermal overload protection will limit dissipa-
tion and prevent damage. However, with more than 30V
across the conducting output transistor, thermal limiting
is not quick enough to ensure protection in current limit.
The thermal protection is effective with 40V across the
conducting output transistor as long as the load current is
otherwise limited to 150mA.
Drive Impedance
When driving capacitive loads, the LT1010 likes to be
driven from a low source impedance at high frequencies.
Certain low power op amps (e.g., the LM10) are marginal
in this respect. Some care may be required to avoid
oscillations, especially at low temperatures.
Bypassing the buffer input with more than 200pF will solve
the problem. Raising the operating current also works.
Parallel Operation
Parallel operation provides reduced output impedance,
more drive capability and increased frequency response
under load. Any number of buffers can be directly paral-
leled as long as the increased dissipation in individual
units caused by mismatches of output resistance and
offset voltage is taken into account.
When the inputs and outputs of two buffers are connected
together, a current, ∆IOUT, flows between the outputs:
VOS1 – VOS2
∆IOUT =
ROUT1 + ROUT2
where VOS and ROUT are the offset voltage and output
resistance of the respective buffers.
Normally, the negative supply current of one unit will
increase and the other decrease, with the positive supply
current staying the same. The worst-case (VIN → V +)
increase in standby dissipation can be assumed to be
∆IOUTVT, where VT is the total supply voltage.
Offset voltage is specified worst case over a range of
supply voltages, input voltage and temperature. It would
7
LT1010
U U W U
APPLICATIO S I FOR ATIO
be unrealistic to use these worst-case numbers above At lower frequencies, the buffer is within the feedback loop
because paralleled units are operating under identical so that its offset voltage and gain errors are negligible. At
conditions. The offset voltage specified for VS = ±15V, higher frequencies, feedback is through CF, so that phase
VIN = 0V and TA = 25°C will suffice for a worst-case shift from the load capacitance acting against the buffer
condition. output resistance does not cause loop instability.
V+ Stability depends upon the RFCF time constant or the
closed-loop bandwidth. With an 80kHz bandwidth, ring-
IS
IS
ing is negligible for CL = 0.068µF and damps rapidly for
A1
CL = 0.33µF. The pulse response is shown in the graph.
VIN LT1010 VOUT

Pulse Response
∆IOUT
CL = 0.068µF
A2 5
LT1010
0

OUTPUT VOLTAGE (V)

IS – ∆IOUT IS + ∆IOUT –5

1010 AI03
CL = 0.33µF
V– 5

Output load current will be divided based on the output 0

resistance of the individual buffers. Therefore, the avail- –5

able output current will not quite be doubled unless output

0 50 100 150 200
resistances are matched. As for offset voltage, the 25°C TIME (µs)
limits should be used for worst-case calculations. 1010 AI05

Parallel operation is not thermally unstable. Should one

unit get hotter than its mates, its share of the output and
its standby dissipation will decrease.
As a practical matter, parallel connection needs only some
increased attention to heat sinking. In some applications,
a few ohms equalization resistance in each output may be
wise. Only the most demanding applications should re-
Small-signal bandwidth is reduced by CF, but consider-
able isolation can be obtained without reducing it below
the power bandwidth. Often, a bandwidth reduction is
desirable to filter high frequency noise or unwanted
signals.
RF
2k

quire matching, and then just of output resistance at 25°C. CF

1nF
–
Isolating Capacitive Loads RS A1 A2
VOUT
2k LT118A LT1010
The inverting amplifier below shows the recommended VIN + CL
method of isolating capacitive loads. Noninverting ampli- 1010 AI06

fiers are handled similarly.

RF
RS 20k The follower configuration is unique in that capacitive
VIN
load isolation is obtained without a reduction in small-
CF
100pF signal bandwidth, although the output impedance of the
–
A1 A2 buffer comes into play at high frequencies. The precision
LT1007 LT1010 VOUT
+
unity-gain buffer above has a 10MHz bandwidth without
CL
capacitive loading, yet it is stable for all load capacitance
1010 AI04
to over 0.3µF, again determined by RFCF.

8
 LT1010
U U W U
APPLICATIO S I FOR ATIO
This is a good example of how fast op amps can be made stage. Feedback is arranged in the conventional manner,
quite easy to use by employing an output buffer. although the 68µF-0.01µF combination limits DC gain to
unity for all gain settings. For applications sensitive to
Integrator NTSC requirements, dropping the 25Ω output stage bias
A lowpass amplifier can be formed just by using large C F value will aid performance.
in the inverter described earlier, as long as the increasing R2
closed-loop output impedance above the cutoff frequency 800Ω

is not a problem and the op amp is capable of supplying C1

the required current at the summing junction. – 15pF
A1 A2
CI HA2625 LT1010 VOUT
1010 AI09

IIN VIN +
RF
20k R1
100Ω
–
A1 A2
LT1012 LT1010 VOUT
1010 AI07
+ This shows the buffer being used with a wideband ampli-
CF
500pF fier that is not unity-gain stable. In this case, C1 cannot be
used to isolate large capacitive loads. Instead, it has an
optimum value for a limited range of load capacitances.
If the integrating capacitor must be driven from the buffer
output, the circuit above can be used to provide capacitive The buffer can cause stability problems in circuits like
load isolation. As before, the stability with large capacitive this. With the TO-220 packages, behavior can be im-
loads is determined by RFCF. proved by raising the quiescent current with a 20Ω
resistor from the bias terminal to V +. Alternately, devices
Wideband Amplifiers in the miniDIP can be operated in parallel.
This simple circuit provides an adjustable gain video It is possible to improve capacitive load stability by
amplifier that will drive 1VP-P into 75Ω. The differential operating the buffer class A at high frequencies. This is
pair provides gain with the LT1010 serving as an output done by using quiescent current boost and bypassing the
bias terminal to V – with more than 0.02µF.
15V TYPICAL SPECIFICATIONS
1VP-P INTO 75Ω R2
AT A = 2 1.6k
8.2k 25Ω 0.5dB TO 10MHz
3dB DOWN AT 16MHz
AT A = 10
+ BIAS –
22µF + 0.5dB TO 4MHz
A1 A2
22µF –3dB = 8MHz OUTPUT
HA2625 LT1010 1010 AI10
INPUT +
LT1010 OUTPUT
(75Ω)
R1
400Ω

–15V
PEAKING
900Ω
5pF to 25pF
Putting the buffer outside the feedback loop as shown
INPUT Q1 Q2
1k here will give capacitive load isolation, with large output
Q1, Q2: 2N3866
GAIN SET capacitors only reducing bandwidth. Buffer offset, re-
5.1k
+ ferred to the op amp input, is divided by the gain. If the
0.01µF 68µF
–15V load resistance is known, gain error is determined by the
1010 AI08 output resistance tolerance. Distortion is low.

9
LT1010
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APPLICATIO S I FOR ATIO
R3
800Ω
current boost. The appearance is always worse with fast
rise signal generators than in practical applications.
C1
– 20pF R4
A1 A2 39Ω Track and Hold
INPUT HA2625 LT1010 OUTPUT 1
+ The 5MHz track and hold shown here has a 400kHz power
bandwidth driving ±10V. A buffered input follower drives
R1
50Ω
R2
200Ω
the hold capacitor, C4, through Q1, a low resistance FET
R5
39Ω
switch. The positive hold command is supplied by TTL
A3
LT1010
OUTPUT 2 logic with Q3 level shifting to the switch driver, Q2. The
1010 AI11
output is buffered by A3.
OTHER When the gate is driven to V – for HOLD, it pulls charge out
SLAVES
of the hold capacitor. A compensating charge is put into
The 50Ω video line splitter here puts feedback on one the hold capacitor through C3. The step into hold is made
buffer with the others slaved. Offset and gain accuracy of independent of the input level with R7 and adjusted to zero
slaves depend on their matching with master. with R10.
When driving long cables, including a resistor in series Since internal dissipation can be quite high when driving
with the output should be considered. Although it reduces fast signals into a capacitive load, using a buffer in a power
gain, it does isolate the feedback amplifier from the effects package is recommended. Raising buffer quiescent cur-
of unterminated lines which present a resonant load. rent to 40mA with R3 improves frequency response.
When working with wideband amplifiers, special atten- This circuit is equally useful as a fast acquisition sample
tion should always be paid to supply bypassing, stray and hold. An LT1056 might be used for A3 to reduce drift
capacitance and keeping leads short. Direct grounding of in hold because its lower slew rate is not usually a problem
test probes, rather than the usual ground lead, is abso- in this application.
lutely necessary for reasonable results.
Current Sources
The LT1010 has slew limitations that are not obvious from
standard specifications. Negative slew is subject to A standard op amp voltage to current converter with a
glitching, but this can be minimized with quiescent buffer to increase output current is shown here. As usual,

V+

R1 R3 –
2k 20Ω Q1 A3
INPUT + 2N5432 LT118A OUTPUT
A1 A2 S D
LT118A LT1010 +
– C1 C3
50pF R2 100pF
+
D2*
2k A4 6V
C2 LT118A
D1 R4 C4 –
150pF HP2810 2k 1nF R8
5k
R5 Q3 R9
1k C5
2N2907 Q2 10pF 10k
HOLD
2N2222
R6 R10
1k R7 R11
200k 50k 6.2k
1010 AI12
V– *2N2369 EMITTER BASE JUNCTION

10
 LT1010
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APPLICATIO S I FOR ATIO
excellent matching of the feedback resistors is required to R2
get high output resistance. Output is bidirectional. – C1
1nF
2k
R3
A1 A2 2Ω
R1 R2 R2(V2 – V1) LT118A LT1010 OUTPUT
100k 100k IOUT =
R1R4 + R4
0.01% 0.01% 2k R5
V1 0.1% 2k
D1 – 0.1%
R4 1N457
A3
– 10Ω
LT118A
A1 A2 0.1% +
LT1012 LT1010 IOUT R1 C2 D2
10pF 1N457 R6
+ 2k 99.8k
R3
0.1%
100k R7
0.01% VV 99.8k VI
1010 AI13
V2 1V/V 10mA/V
0.1%
R4
1010 AI15
100k
0.01%

This circuit uses an instrumentation amplifier to eliminate enables the current regulator to get control of the output
the matched resistors. The input is not high impedance current from the buffer current limit within a microsecond
and must be driven from a low impedance source like an for an instantaneous short.
op amp. Reversal of output sense can be obtained by
In the voltage regulation mode, A1 and A2 act as a fast
grounding Pin 7 of the LM163 and driving Pin 5.
voltage follower using the capacitive load isolation tech-
nique described earlier. Load transient recovery as well as
capacitive load stability are determined by C1. Recovery
A2
LT1010
IOUT =
VIN from short circuit is clean.
10R1

R1
Bidirectional current limit can be obtained by adding
VIN 10Ω another op amp connected as a complement to A3.
2 0.1%
7 –
IOUT
A1
6
LM163
Supply Splitter
×10 + 3
5 Dual supply op amps and comparators can be operated
1010AI14 from a single supply by creating an artificial ground at half
the supply voltage. The supply splitter shown here can
Output resistances of several megohms can be obtained source or sink 150mA.
with both circuits. This is impressive considering the
±150mA output capability. High frequency output charac- The output capacitor, C2, can be made as large as neces-
teristics will depend on the bandwidth and slew rate of the sary to absorb current transients. An input capacitor is
amplifiers. Both these circuits have an equivalent output also used on the buffer to avoid high frequency instability
capacitance of about 30nF. that can be caused by high source impedance.

Voltage/Current Regulator V+
C3
R1 0.1µF
This circuit regulates the output voltage at VV until the 10k
A1
load current reaches a value programmed by VI. For LT1010 V +/2
heavier loads, it is a precision current regulator. C1 R2 C2
1nF 10k 0.01µF
With output currents below the current limit, the current
regulator is disconnected from the loop by D1 with D2 1010 AI16

keeping its output out of saturation. This output clamp

11
LT1010
U U W U
APPLICATIO S I FOR ATIO
High Current Booster 5V

The circuit below uses a discrete stage to get 3A output INPUT

Q1
2N5486
capacity. The configuration shown provides a clean, quick A A2 B
OUTPUT
way to increase LT1010 output power. It is useful for high LT1010
10M
current loads such as linear actuator coils in disk drives. –5V
0.1µF
The 33Ω resistors sense the LT1010’s supply current 4 + 3
with the grounded 100Ω resistor supplying a load for the Q2
10k 6 A1
2N2222 LTC1050
LT1010. The voltage drop across the 33Ω resistors – 2
0.01µF
biases Q1 and Q2. Another 100Ω value closes a local 10M 100Ω 7
2000pF 0.1µF
feedback loop, stabilizing the output stage. Feedback to –5V
5V 1k

the LT1056 control amplifier is via the 10k value. Q3 and

Q4, sensing across the 0.18Ω units, furnish current 1010 AI18

limiting at about 3.3A.

signal. The amplified difference between these signals is
15pF
used to set Q2’s bias, and hence, Q1’s channel current.
10k This forces Q1’s VGS to whatever voltage is required to
15V
match the circuit’s input and output potentials. The 2000pF
0.18Ω capacitor at A1 provides stable loop compensation. The
+
Q3
1k RC network in A1’s output prevents it from seeing high
22µF 33Ω
68pF 2N3906 speed edges coupled through Q2’s collector-base junc-
tion. A2’s output is also fed back to the shield around Q1’s
10k Q1
INPUT – MJE2955 gate lead, bootstrapping the circuit’s effective input ca-
LT1056 LT1010 OUTPUT pacitance down to less than 1pF.
100Ω
+ 100Ω

Q2
Gain-Trimmable Wideband FET Amplifier
MJE3055
A potential difficulty with the previous circuit is that the
33Ω Q4 1k gain is not quite unity. The figure labeled A on the next
2N3904
page maintains high speed and low bias while achieving
–15V 1010 AI17

22µF 0.18Ω a true unity-gain transfer function.

+
HEAT SINK OUTPUT TRANSISTORS
Wideband FET Input Stabilized Buffer
The figure below shows a highly stable unity-gain buffer
with good speed and high input impedance. Q1 and Q2
constitute a simple, high speed FET input buffer. Q1
functions as a source follower with the Q2 current source
load setting the drain-source channel current. The LT1010
buffer provides output drive capability for cables or
whatever load is required. Normally, this open-loop con-
figuration would be quite drifty because there is no DC
feedback. The LTC®1050 contributes this function to
stabilize the circuit. It does this by comparing the filtered
circuit output to a similarly filtered version of the input
This circuit is somewhat similar except that the Q2-Q3
stage takes gain. A2 DC stabilizes the input-output path
and A1 provides drive capability. Feedback is to Q2’s
emitter from A1’s output. The 1k adjustment allows the
gain to be precisely set to unity. With the LT1010, output
stage slew and full power bandwidth (1VP-P) are 100V/µs
and 10MHz respectively. – 3dB bandwidth exceeds 35MHz.
At A = 10 (e.g., 1k adjustment set at 50Ω), full power
bandwidth stays at 10MHz while the –3dB point falls to
22MHz.
With the optional discrete stage, slew exceeds 1000V/µs
and full power bandwidth (1VP-P) is 18MHz. – 3dB band-
width is 58MHz. At A = 10, full power is available to
10MHz, with the – 3dB point at 36MHz.

12
 LT1010
U U W U
APPLICATIO S I FOR ATIO
Figures A and B show response with both output stages. faster. Either stage provides more than adequate perfor-
The LT1010 is used in Figure A (Trace A = input, Trace B mance for driving video cable or data converters and the
= output). Figure B uses the discrete stage and is slightly LT1012 maintains DC stability under all conditions.

Gain-Trimmable Wideband FET Amplifier

15V

10pF
1k 470Ω

Q1 Q3
INPUT 2N3906 15V
2N5486
Q2 A A2 B
2N3904 OUTPUT
LT1010
0.01µF
3k

1k 2N3904

1k
3Ω
GAIN
ADJ A B
10M 10k 2k 300Ω 50Ω 5.6k 3k 10M
3Ω

0.1µF 2N3906
–15V +
3k
A1
LT1012 0.1µF
– 1k
–15V
0.002µF

1010 AI19

(A) (B)

A = 0.2V/DIV A = 0.2V/DIV
B = 0.2V/DIV B = 0.2V/DIV
1010 AI20 1010 AI21
10ns/DIV 10ns/DIV

Figure A. Waveforms Using LT1010 Figure B. Waveforms Using Discrete Stage

13
LT1010
W W
SCHE ATIC DIAGRA (Excluding protection circuits)

R6
15Ω
V+
R7 R10
Q11 Q18
300Ω 200Ω
R5
BIAS
1.5k
Q17 Q19

Q5 R2 R3 R4 R11
1k 1k 1k 200Ω
C1 Q20
30pF
Q6 Q7 R12
Q8 Q21 R14
3k 7Ω
Q3 Q12 R8 OUTPUT
1k
Q2 Q15
R13
Q4 Q13 200Ω
Q22

Q1 R1 Q9 Q10 Q14 R9 Q16 INPUT

4k 4k
V–
1010 SD

U U W
DEFI ITIO OF TER S
Output Offset Voltage: The output voltage measured with Saturation Resistance: The ratio of the change in output
the input grounded (split supply operation). saturation voltage to the change in current producing it,
going from no load to full load.*
Input Bias Current: The current out of the input terminal.
Slew Rate: The average time rate of change of output
Large-Signal Voltage Gain: The ratio of the output volt-
voltage over the specified output range with an input step
age change to the input voltage change over the specified
between the specified limits.
input voltage range.*
Bias Terminal Voltage: The voltage between the bias
Output Resistance: The ratio of the change in output
terminal and V +.
voltage to the change in load current producing it.*
Output Saturation Voltage: The voltage between the out- Supply Current: The current at either supply terminal with
no output loading.
put and the supply rail at the limit of the output swing
toward that rail. *Pulse measurements (~1ms) as required to minimize thermal effects.

Saturation Offset Voltage: The output saturation voltage

with no load.

14
 LT1010
U
APPE DIX
Thermal Considerations for the MiniDIP Package This causes the LT1010 junction temperature to rise
The miniDIP package requires special thermal consider- another (0.280W)(0.130°C/W) = 36.4°C.
ations since it is not designed to dissipate much power. Be This heats the junction to 68.7°C + 36.4°C = 105.1°C.
aware that for applications requiring large output cur-
Caution: This exceeds the maximum junction temperature
rents, another package should be used.
of the device.
Typical thermal calculations for the miniDIP package are
An example of 1MHz operation further shows the limita-
detailed in the following paragraphs.
tions of the N (or miniDIP) package. For ±15V operation:
For 4.8mA supply current (typical at 50°C, 30V supply
PD at IL = 0 at 1MHz* = (10mA)(30V) = 0.30W
voltage—see supply current graphs) to the LT1010 at
±15V, PD = power dissipated in the part is equal to: This power dissipation causes the junction to heat from
50°C (ambient in this example) to 50°C + (0.3W)
(30V)(0.0048A) = 0.144W
(130°C/W) = 89°C. Driving 2VRMS of 1MHz signal into a
The rise in junction is then: 200Ω load causes an additional
(0.144W)(130°C/W—This is θJA for the N package)
 2V 
= 18.7°C. PD =   • 15 – 2 = 0.130W
 200Ω 
( )
This means that the junction temperature in 50°C ambient
air without driving any current into a load is: to be dissipated, resulting in another (0.130W)
18.7°C + 50°C = 68.7°C (0.130°C/W) = 16.9°C rise in junction temperature to
89°C + 16.9°C = 105.9°C.
Using the LT1010 to drive 8V DC into a 200Ω load using
±15V power supplies dissipates PD in the LT1010 where: Caution: This exceeds the maximum junction temperature
of the device.

P =
D
(V +
)( )
– VOUT VOUT *See Supply Current vs Frequency graph.

RL

=
( )( ) = 0.280W
15V – 8 V 8 V
200Ω

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15
LT1010
U
PACKAGE DESCRIPTIO
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
0.400*
(10.160)
0.300 – 0.325 0.045 – 0.065 0.130 ± 0.005 MAX
(7.620 – 8.255) (1.143 – 1.651) (3.302 ± 0.127)
8 7 6 5

0.065
0.255 ± 0.015*
(1.651)
0.009 – 0.015 TYP (6.477 ± 0.381)
(0.229 – 0.381) 0.125
(3.175) 0.020
+0.035 MIN (0.508) 1 2 3 4
0.325 –0.015

( )
0.100 0.018 ± 0.003 MIN
N8 1098
+0.889
8.255 (2.54) (0.457 ± 0.076)
–0.381 BSC
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)

T Package
5-Lead Plastic TO-220 (Standard)
(Reference LTC DWG # 05-08-1421)

0.147 – 0.155 0.165 – 0.180

0.390 – 0.415 (3.734 – 3.937) (4.191 – 4.572) 0.045 – 0.055
(9.906 – 10.541) DIA (1.143 – 1.397)

0.230 – 0.270
(5.842 – 6.858)

0.570 – 0.620
0.620
0.460 – 0.500 (14.478 – 15.748)
(15.75)
(11.684 – 12.700) TYP
0.330 – 0.370
0.700 – 0.728
(8.382 – 9.398)
(17.78 – 18.491)

0.095 – 0.115
SEATING PLANE
(2.413 – 2.921)
0.152 – 0.202
0.260 – 0.320 (3.861 – 5.131) 0.155 – 0.195*
(6.60 – 8.13) (3.937 – 4.953)

0.013 – 0.023
(0.330 – 0.584)
0.067
BSC 0.028 – 0.038 0.135 – 0.165
(1.70)
(0.711 – 0.965) (3.429 – 4.191) * MEASURED AT THE SEATING PLANE
T5 (TO-220) 0399

RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1206 250mA, 60MHz Current Feedback Amplifier 900V/µs, Excellent Video Characteristics
LT1210 1.1A, 35MHz Current Feedback Amplifier 900V/µs Slew Rate, Stable with Large Capacitive Loads
LT1795 Dual 500mA, 50MHz CFA 500mA IOUT ADSL Driver
LT1886 Dual 700MHz, 200mA Op Amp DSL Driver

Linear Technology Corporation 1010fa LT/TP 0601 1.5K REV A • PRINTED IN THE USA

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