VDS

900 V

E3M0280090D ID @ 25˚C 11.5 A

RDS(on) 280 mΩ
Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode
Features Package

• 3rd generation SiC MOSFET technology

• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

• Higher system efficiency

• Reduced cooling requirements
• Increased power density
• Increased system switching frequency

Applications

• Automotive EV battery chargers

• Renewable energy
• High voltage DC/DC converters
Part Number Package Marking
• Telecom Power Supplies
E3M0280090D TO-247-3 E3M0280090

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA

VGSmax Gate - Source Voltage -8/+18 V Note: 1

VGSop Gate - Source Voltage (Recommended operating values) -4/+15 V Note: 2

11.5 VGS = 15 V, TC = 25˚C Fig. 19

ID Continuous Drain Current A
7.5 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 22 A Pulse width tP limited by Tjmax Fig. 22

PD Power Dissipation 54 W TC=25˚C, TJ = 150 ˚C Fig. 20

-55 to
TJ , Tstg Operating Junction and Storage Temperature
+150
˚C

1.6mm (0.063”) from case for

TL Solder Temperature 260 ˚C
10s
1 Nm
Md Mounting Torque
8.8 lbf-in
M3 or 6-32 screw

Note (1): When using MOSFET Body Diode VGSmax = -4V/+18V

Note (2): MOSFET can also safely operate at 0/+15 V

1 E3M0280090D Rev. - , 07-2018

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA
1.7 2.1 3.5 V VDS = VGS, ID = 1.2 mA
VGS(th) Gate Threshold Voltage Fig. 11
1.6 V VDS = VGS, ID = 1.2 mA, TJ = 150ºC
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
280 364 VGS = 15 V, ID = 7.5 A Fig. 4,
RDS(on) Drain-Source On-State Resistance mΩ
385 VGS = 15 V, ID = 7.5 A, TJ = 150ºC 5, 6

3.6 VDS= 15 V, IDS= 7.5 A

gfs Transconductance S Fig. 7
3.1 VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
Ciss Input Capacitance 150
VGS = 0 V, VDS = 600 V Fig. 17,
Coss Output Capacitance 20 pF
18
f = 1 MHz
Crss Reverse Transfer Capacitance 2
VAC = 25 mV
Eoss Coss Stored Energy 4.5 μJ Fig. 16

EON Turn-On Switching Energy (Body Diode FWD) 57 VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A, Fig. 26,
μJ 29
RG(ext) = 2.5Ω, L= 220 μH, TJ = 150ºC Note 3
EOFF Turn Off Switching Energy (Body Diode FWD) 6

td(on) Turn-On Delay Time 26

VDD = 400 V, VGS = -4 V/15 V
tr Rise Time 10 Fig. 27,
ID = 7.5 A, RG(ext) = 2.5 Ω,
ns 29
td(off) Turn-Off Delay Time 17.5 Timing relative to VDS
Note 3
Inductive load
tf Fall Time 7.5
RG(int) Internal Gate Resistance 26 Ω f = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 2.8
VDS = 400 V, VGS = -4 V/15 V
Qgd Gate to Drain Charge 3.4 nC ID = 7.5 A Fig. 12
Qg Total Gate Charge 9.5 Per IEC60747-8-4 pg 21

Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)

Symbol Parameter Typ. Max. Unit Test Conditions Note

4.8 V VGS = -4 V, ISD = 4 A
Fig. 8,
VSD Diode Forward Voltage 9, 10
4.4 V VGS = -4 V, ISD = 4 A, TJ = 150 °C

IS Continuous Diode Forward Current 9.6 A VGS = -4 V, TC = 25˚C Note 1

IS, pulse Diode pulse Current 22 A VGS = -4 V, pulse width tP limited by Tjmax Note 1

trr Reverse Recover time 20 ns

VGS = -4 V, ISD = 4 A, VR = 400 V
Qrr Reverse Recovery Charge 47 nC Note 1
dif/dt = 800 A/µs, TJ = 150 °C
Irrm Peak Reverse Recovery Current 3.4 A

Thermal Characteristics

Symbol Parameter Max. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 2.3
°C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

2 E3M0280090D Rev. - , 07-2018

Typical Performance

20 20
Conditions: VGS = 15 V Conditions: VGS = 15 V
18 TJ = -55 °C 18 TJ = 25 °C
tp = < 200 µs tp = < 200 µs VGS = 13 V
VGS = 13 V
16 16
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

14 14 VGS = 11 V

12 12
VGS = 11 V
VGS = 9 V
10 10
VGS = 9 V
8 8

6 6 VGS = 7 V
VGS = 7 V
4 4

2 2

0 0
0 2 4 6 8 10 0 2 4 6 8 10
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -55 ºC Figure 2. Output Characteristics TJ = 25 ºC

20 2.5
Conditions: Conditions:
18 TJ = 150 °C VGS = 15 V IDS = 7 A
tp = < 200 µs VGS = 15 V
VGS = 13 V
16 2.0 tp < 200 µs
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

14 VGS = 11 V

12 1.5

10 VGS = 9 V

8 1.0

6 VGS = 7 V

4 0.5

0 0.0
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3. Output Characteristics TJ = 150 ºC Figure 4. Normalized On-Resistance vs. Temperature

600 600
Conditions: Conditions:
VGS = 15 V 550 IDS = 7 A
tp < 200 µs tp < 200 µs
500 500
450
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)

TJ = 150 °C VGS = 11 V
400 400
350 VGS = 13 V
TJ = -55 °C
300 300
TJ = 25 °C 250 VGS = 15 V

200 200
150
100 100
50
0 0
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

3 E3M0280090D Rev. - , 07-2018

Typical Performance

15 -8 -7 -6 -5 -4 -3 -2 -1 0
Conditions: 0
VDS = 20 V
tp < 200 µs
TJ = 150 °C
VGS = -4 V

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

10 -5
TJ = 25 °C
VGS = 0 V

TJ = -55 °C
VGS = -2 V -10
5

-15

Conditions:
0 TJ = -55°C
tp < 200 µs
0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00
-20
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)

Figure 7. Transfer Characteristic for

Figure 8. Body Diode Characteristic at -55 ºC
Various Junction Temperatures
-8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0
0 0
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = -4 V VGS = -4 V
VGS = 0 V -5 VGS = 0 V -5

VGS = -2 V
VGS = -2 V
-10 -10

-15 -15

Conditions: Conditions:
TJ = 25°C TJ = 150°C
tp < 200 µs tp < 200 µs
-20 -20
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC

3.0 16
Conditons Conditions:
VGS = VDS IDS = 7.5 A
2.5 IDS = 1.2 mA IGS = 10 mA
12 VDS = 400 V
TJ = 25 °C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

2.0
8

1.5

4
1.0

0
0.5

0.0 -4
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
Junction Temperature TJ (°C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

4 E3M0280090D Rev. - , 07-2018

Typical Performance
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
0 0

VGS = 0 V VGS = 0 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-5 -5
VGS = 5 V VGS = 5 V

VGS = 10 V
VGS = 10 V

-10 -10
VGS = 15 V
VGS = 15 V

-15 -15

Conditions: Conditions:
TJ = -55 °C TJ = 25 °C
tp < 200 µs tp < 200 µs
-20 -20
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC

-6 -5 -4 -3 -2 -1 0 10
0

VGS = 0 V
8
Drain-Source Current, IDS (A)

Stored Energy, EOSS (µJ)

-5
6
VGS = 5 V

VGS = 10 V
-10 4
VGS = 15 V

2
-15

Conditions:
TJ = 150 °C 0
tp < 200 µs
0 100 200 300 400 500 600 700 800 900 1000
-20
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy

1000 1000
Conditions: Conditions:
TJ = 25 °C TJ = 25 °C
VAC = 25 mV VAC = 25 mV
f = 1 MHz f = 1 MHz
Ciss Ciss

100 100
Capacitance (pF)

Capacitance (pF)

Coss

Coss

10 10

Crss
Crss

1 1
0 50 100 150 200 0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 200V) Voltage (0 - 900V)

5 E3M0280090D Rev. - , 07-2018

Typical Performance
12 60
Conditions: Conditions:
TJ ≤ 150 °C TJ ≤ 150 °C
Drain-Source Continous Current, IDS (DC) (A)

10

Maximum Dissipated Power, Ptot (W)

50

8 40

6 30

4 20

2 10

0 0
-55 -30 -5 20 45 70 95 120 145 -55 -30 -5 20 45 70 95 120 145
Case Temperature, TC (°C) Case Temperature, TC (°C)

Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature Case Temperature
Junction To Case Impedance, ZthJC (oC/W)

0.5 10.00 10 µs
Limited by RDS On
1 100 µs
0.3
Drain-Source Current, IDS (A)

1 ms

0.1 100 ms
1.00
0.05

100E-3 0.02

0.01 SinglePulse 0.10

Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
10E-3
0.1 1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area
(Junction - Case)
300 180
Conditions: Conditions:
TJ = 25 °C TJ = 25 °C
160
VDD = 600 V VDD = 400 V
250 RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω
VGS = -4V/+15 V 140 VGS = -4V/+15 V
FWD = EM0280090D FWD = E3M0280090D
200 L = 220 μH 120 L = 220 μH
Switching Loss (uJ)

Switching Loss (uJ)

ETotal ETotal
100
150
80
EOn EOn
100 60

40
50
EOff 20 EOff

0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)

Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V) Drain Current (VDD = 400V)

6 E3M0280090D Rev. - , 07-2018

Typical Performance
100 100
Conditions: Conditions:
TJ = 25 °C IDS = 7.5 A
VDD = 400 V VDD = 400 V
80 IDS = 7.5 A 80 RG(ext) = 2.5 Ω
VGS = -4V/+15 V VGS = -4V/+15 V
FWD = E3M0280090D ETotal FWD = E3M0280090D
L = 220 μH L = 220 μH
ETotal
Switching Loss (uJ)

Switching Loss (uJ)

60 60
EOn
EOn

40 40

20 20
EOff
EOff

0 0
0 5 10 15 20 25 0 25 50 75 100 125 150 175
External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)

Figure 26. Clamped Inductive Switching Energy vs.

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
Temperature
45
Conditions:
TJ = 25 °C
40
VDD = 400 V
IDS = 7.5 A
35 VGS = -4V/+15 V
FWD = E3M0280090D
30 L = 220 μH td(on)
Times (ns)

25

20 td(off)

15 tr

10
tf
5

0
0 5 10 15 20 25
External Gate Resistor RG(ext) (Ohms)

Figure 27. Switching Times vs. RG(ext) Figure 28. Switching Times Definition

7 E3M0280090D Rev. - , 07-2018

Test Circuit Schematic

Figure 29. Clamped Inductive Switching Test Circuit

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

8 E3M0280090D Rev. - , 07-2018

 Package Dimensions
Inches Millimeters
Package TO-247-3 POS
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
T U Pinout Information: L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
• Pin 1 = Gate
• Pin 2, 4 = Drain Q .216 .236 5.49 6.00

V W • Pin 3 = Source S .238 .248 6.04 6.30

T 9˚ 11˚ 9˚ 11˚
U 9˚ 11˚ 9˚ 11˚
V 2˚ 8˚ 2˚ 8˚
W 2˚ 8˚ 2˚ 8˚

Recommended Solder Pad Layout

TO-247-3

9 E3M0280090D Rev. - , 07-2018

Notes

• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.

• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.

Related Links

• LTSPICE Models: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

Cree, Inc.
Copyright © 2018 Cree, Inc. All rights reserved. 4600 Silicon Drive
Durham, NC 27703
The information in this document is subject to change without notice. USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. www.cree.com/power

10 E3M0280090D Rev. -, 07-2018