N= MADE EASY India's Best Institute for IES, GATE & PSUs peroeui emia retin ESE-2020 eA es) Mains Test Series ters aria (ee) Qz1 (a) Solution: Types of error: 1. Gross error 2. Systematic error 3. Random error L 2. 3. Gross error: Main! calculating measurement results e.g. reading current of 31.1 A as 37.1 A. y due to human error in reading instruments, recording and Systematic error: This error is subdivided as follows: (@) Instrumental errors: It arises due to 3 reason: (i) Inherent shortcoming of instrument, (ii) Misuse of instruments, (iii) Loading effect of instruments (i) May be due to construction, calibration or ageing of instrumente.g. if spring of an instrument becomes weak. (ii) A good instrument used in unintelligent way may give erroneous results c.g, failure to adjust zero, using leads of high resistance ete, (iii) Use of voltmeter for measuring voltage across a high resistance circuit. (b) Environmental error: Error due to conditions external to device e.g. temperature, humidity, pressure, dust, etc. (©) Observational error: eg. parallax error. Random error: Error due to multitude of factors which change or fluctuate from ‘one measurement to another. Example: error due to noise. Ways to minimise systematic errors : 1 2. Calibration of instruments against standard may be used. Correction factor should be applied after determining the instrumented error.42 | ESE 2020: MAINS TEST SERIES MADE EASY 3. The error due to loading effect should be considered and corrections for these effects should be made e.g. when measuring a low resistance by ammeter-voltmeter method, voltmeter with high resistance should be made. 4. Conditions for measurement should be kept same. Using of equipment immune to external effects. e.g. variation of resistance with temperature could be minimised by using resistive material with low temperature coefficient of resistance. 6. Electrostatic and magnetic shield may be provided. 7. Parallax error can be eliminated by having a pointer and scale in same plane. Qi (b) Solution: To determine V;,,, we note that Q,, is in the triode region, and 6, is in saturation region. Equating ipy, and ipp, and assuming matched device 1 1 Wi-Vr) Y= ¥e = 5 Woo -Vi-Vr? (i) Differentiating both sides, we get, dV, av, V;-Vp) 2 +v, -v, 2 VY iV, 0 Voay, Vr) In which we substitute, vy; =1to obtain Vv, Substituting, V; = Vu and using the above result in equation (i), we get, Yoo _y |1y2 = 2[Vop- vv ABP | 3| Yoo y, 2 > 2V,(Vpp - 2Vy) = (*s2-ve] Vpp -2V 5, 8 1 Vix = 3 O¥o0 -2¥e) V;, can be determined in a similar manner. Von _ Vow Vig = Be 5e Vi ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 13 Vi = 5 Von +2¥1) NM, 1 3 V0 +20) 1 NM, = Vir~Vou = @¥o0+2¥1) Q1 (©) Solution: The value of R, can be calculated as 2 2 Vi _ 200)" _ 571 49.0 70 Ry Thus, current passing through R, is equal to V,_ 200 ko Ry 571.42 1 035A 2 RO Tea = Ib (0.7)? - (0.35)? =0.61.A Vi _ 200 _ 397 870 Tyo 0.61 P__80 Similarly, R= aor 8° and Zz 7.8 5Q X, = JZ?-R? = (1.5)? -(0.8)? X,= 1272 q R,and X, are referred to HV and since the equivalent circuit shown requires it on the LV side, thus R(LV side) = 08x 29 w X, (LV side) = 1273, 03172 ‘wwe madeeasy.in414 | ESE 2020: MAINS TEST SERIES MADE EASY Q1 (a) Solution: When the switch is at position 1, Ky then, i() = i(1-e © ) i(1ms) = 2a -e*) Lass = pare) i(1ms) = 0.091 When switch is thrown at t= 1 ms then, i-(1 ms) = i*(1 ms) 19 = BE)~ieyfr| = 9* + 0 =-0.lamp ico) = 500 (0.091 - (-0.1) exp[-2500(¢ - 1) x 10-5] + (0.1) i) i() = 0.191exp(-2.5(t-1)) - 0.1 ‘The voltage across the resistor is given by Vall) = HOR 0 = RAM? MD ~ 0.1) -2.5(t-1) = -0.6471 # = 1.260 ms Q11 (¢) Solution: Superconductivity or zero resistivity (electrical) depends on three parameters. 1. Critical temperature (T,) 2. Critical magnetic field (H,) 3. Critical current density ([,) ‘The process of superconductivity is reversible like liquid-gas phase. According to Silsbee’s rule if a current greater than critical current is applied then superconductivity of the material is lost. At critical values of parameter there is a transition in state of material Ina long superconducting wire of radius r, the superconductivity may be destroyed when a current I exceeds the critical current value /,, which at the surface of wire will produce a critical field H.. I, = 2nrlH, ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 15 I, _ 2nrH, Critical current density = (= "737 => On the basis of their magnetic properties superconductors are categorized in two types (1) Typel 2) Typell ‘Type 1: These superconductor shows perfect diamagnetism upto critical field H, and shows normal state after that, Soft metals belongs to this group. e.g. lead, Indium. These materials are not suitable for high field applications. These materials follows Silsbee’s rule and shows Meissner’ effect. ‘Type Il: These superconductors have different magnetization properties. Hard metals and alloys belongs to this group. These have high transition temperature, high critical field, incomplete Meissner’s effect, breakdown of Silsbee’s rule and broad transition region. -M He H He H Type Typel Applications 1, Inmagnetic levitation trains 2. Making electricity generation more efficient. 3. Very fast computing 4, In detecting even the weakest magnetic field in superconducting quantum interference devices (SQUID’s) 5. In particle accelerator. Q2 (a) Solution: For condition (i) the logic is MS For condition (ii) the logic is TMS For condition (iii) the logic is THS For condition (iv) the logic is TMS and for condition (v) the logic is TH scoot MADE EASY ‘wwe madeeasy.in46 | ESE 2020: MAINS TEST SERIES MADE EASY ‘Thus, the to turn on the sprinkler becomes f= SM+SMT+STH+SMT+TH ‘Thus, the expression for minterm can be written as (SM, T, H) = %m(0,1, 2,3, 6,8, 9, 10, 11, 14, 15) ‘Thus, the K-map can be drawn as follows TH sM 00. ol 00 |} o 1 10 f(S,M,T,H) = M+ST+AT M+(S+A)T Thus, we have to use 2 input gates i.e. AND, OR and two nor gates to get inverted signal. H > pH s——_ D—p—: Q2 (b) Solution: A piezo-electric material is one in which an electric potential appears across certain surfaces of a crystal if the dimensions of the crystal are changed by the application of a mechanical force. This potential is produced by the displacement of charges. The effect is reversible, i.e. conversely, if a varying potential is applied to the proper axis of the crystal, it will change the dimensions of the crystal thereby deforming it. This effect is known as piezo-electric effect. Elements exhibiting piezo-electric quantities are called as clectro-resistive elements. The materials that exhibit a significant and useful piezo-electric effect are divided into two categories: (a) Natural group and (b) Synthetic group. Quartz and Rochelle salt belong to natural group while materials like lithium sulphate, ethylene diamine tartrate belong to the synthetic group. scoot MADE EASY ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 17 Piezoelectric crystal Cable Amplifier i 2 ° oz. I: : | © Consider the transducer, the connecting cable and the amplifier as a unit. The impedance of the transducer is very high and hence an amplifier with a high input impedance has to be used in order to avoid loading errors. Charge produced, q = K, x, Coulomb where, K, = sensitivity; C/m and x, = displacement; m Figure (b) shows the equivalent circuit: Ry = Leakage resistance of transducer; 2 C, = Capacitance of transducer; F Co = Capacitance of cable; F Cy = Capacitance of amplifier; F R, = Resistance of amplifier; 2 The charge generator is converted into a constant current generator as shown in figure (c). ‘The capacitance connected across the current generator is C where: C=C HCH RaRp Ra+Rp Resistance, R scoot MADE EASY ‘wwe madeeasy.in48 | ESE 2020: MAINS TEST SERIES MADE EASY Since the leakage resistance of transducer is very large (of the order of 0.1 x 10! Q) and therefore, R=R, Converting the charge generator into a current generator AL g ( fo ap (dt ) where icy is the current of the constant current generator. Now, i icR Output voltage at load, or or or ReMi se, = K, RAG) dt . ‘ dt where, K= Taking Laplace transform: (ts +1) E,(s) = Kts X, (9) ©. Transfer function: Ex(s) _ _Kts Xs) 1+ts Sinusoidal transfer function: E,G®) _ 14(jo) = J0K® X,(jo) 1+ jot For starting torque, s = 1. Hence, KE3-Ry Tyan = REEX? ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 19 « Ry For maximum torque, Syy¢ = YX" Hence, 2 re KES max ~ 2X, Tre 0.5(R}+X})_0.5(R7/X} +1) Therefore, Tea XR RT for X_ 7 Smax 200 © 0.5(s2,4, +1) 80 Sax Sao ~5Smaxt1 = 0 Simag = O21, 4.79 For motoring mode slip should be between 0 Sq = 0.056, 0.7865 Sq = 0.056 (Sp Srnax) (iii) The rotor current is given by, scoot MADE EASY www. madecasy.in20 | ESE 2020: MAINS TEST SERIES MADE EASY (onn/ Sa) +1 Smax t1 (0.21/0.056) +1 _ “yo (021741 =38 Thus, the rotor current at starting is 3.8 times the full load current. (iv) Let R, be increased to KR, for increasing the starting torque, ses, (Ra/sg)° 4X2 Tramioua ——-K’R3* XZ xKSq K[ (0.21 /0.056)* +1 }X0.056 1x21 K?~19.13 K + 22.675 = 0 K=127 Hence, the rotor resistance must be increased by a factor of 1.27. Q3 (a) Solution: @ IFT, is the number of photons arriving per unit area per unit second (the photon I flux), then Ty, 7.5 where [is the light intensity (energy flowing per unit area per second) and hv is the energy per photon. Thus, number of EHP is generated per unit volume per second, the photogeneration rate per unit volume G,, is given by I AU pp hw Th c= ne J Ph AD dp" d&n An at = Gy =0 dt Pet ah An = Gyn =n mS pe Ne But by definition, Ao = quAn+ qu, Ap Since, electrons and holes are generated in pairs An = Ap ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 214 Ao = gAn(u, + H,) Thus, substituting for An in the Ac expression = Ate +H) A= cD EHP = Total photogeneration rate Th AD = (AD)G, (AD) — (AP) = (APM Fc [40 x10) (1) (1010) (450%10°*) | ~ (6.63x10™) (3x10°) = 2.26 x 108 EHP st = Haas + Hn) Ao= heD _ (.6x10" 19) (1) (10° x10*) (450x10"°) (10°) (0.0358) (6.63x10™) (310°) (0.1x10) = 1307 mt (iii) Photocurrent density will be AJ = EAo = (50/10*) (1.30) = 6.5 x 10# Am? ‘Thus the photocurrent, AI = AAJ (10 x 0.1 x 10%) (6.5 x 10") = 65*103A=65mA Q.3 (b) Solution: Ina crystallline solid, the energy and volume density of electronic states change across the energy band. Generally, the number of energy levels, which correspond to the electronic wavefunctions in the crystal, in the central region of the band are expected to be very large as shown in figure below. ‘| Energy band ae comet MADE EASY www. madecasy.in22 | ESE 2020: MAINS TEST SERIES MADE EASY ‘Therefore, the number of electron energy states per unit volume over the energy interval E~E +dE, are called the density of states (DOS) and defined as p(E) dE, where p(E) is the DOS. Thus, the number of states per unit volume up to some energy E’ will be Fi Ny(E) = Jotede 0 ‘The expression for the density of states for a 3D crystal is 1 fom’? 8 Td ~E 2 P(E)sp = ele (E~ Eno) where m” is the electron effective mass in a band, E,.. is a potential energy, which may be the conduction band edge or valence band edge, E..or E,, respectively (his the reduced form of Planck's constant h, where f= hh/2n = 1.0546 x 10%? Js). For 2D structures, such as a quantum well, the confinement of carriers in one spatial direction results in the formation of quantum states for motion in this direction. Therefore, the density of states for 2D structures is modified accordingly and can be expressed as mt PE)ap = yz DHE-E) where H(E - E,) is the Heaviside function, It takes the value of zero when E is less than E, and 1, when E is equal to or greater than E,. E,is the ith energy level within the 2D quantum well. For 1D structures, like quantum wires, motion of charge carries are allowed only in one direction and other two directions are quantized. The density of states in this case will then be expressed as af 2m’)? of niH(E-E, PE) = Cr) 3) where once again, H(E ~ E,) is the Heaviside function and nis the degeneracy factor. For quantum structures with dimensions lower than 2, it is possible for the same energy level to occur for more than one arrangement of confined states. To account for this, a second factor 11(E) is introduced. For OD structures, like quantum dots, all three spatial directions are quantized and the expression for the density of states follows a 6-function as P(E)oo = 228(E-E;) scoot MADE EASY ‘wwe madeeasy.inMock Test : 3 E & T ENGINEERING | 23 where the summation is over all of the i quantum states. The densities of states for 3D, 2D, 1D and OD electron systems for one quantized level are schematically shown in figure below: Q3 (c) Solution: @ 30 20 w oo a, ) / Degrees of freedom xt aD (ove t ot 20 ~£° = constant Ez HE) rT) E E+ oD HE) = Density of states The fourth row of the matrix can be constructed as follows: 1000-4 -1-1-10 0 001-40 ‘wwe madeeasy.in24 | ESE 2020: MAINS TEST SERIES MADE EASY Now, there are 4 rows and 5 columns, thus the graph will have 4 nodes and 5 branches. (i) The number of possible trees are given as [AAT] (AJ[AT]=|-1 -1 -1 0 of0 11 oo 1A 0 0 lH o 2-10 =|1 3 4 o -1 2 thus, number of possible trees are 2-10 det[Aa"| = |-1 3 -)=8 0-12 (iii) Consider the tree with branches 1, 2 and 3, the tie-set can be shown in the figure below: 1B 3 183 ttc Arete AR Qa Y tieset 1 : 4,3, 2] tieset 2: (5, 1, 2] 12345 1fo 12110 “21 10041 ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 25 ‘The cutset can be drawn as Cutset 1 Cutset 1 :[1, 5] Cutset 2 :[3, 4] Cutset 3 : (2, 4,5] 1 234 11000 Q-=2)001-1 3jo 1011 Q4 (a) Solution: @ Given output Displacement Vrms 0.4 «10% m Sensitivity of LVDr = OutPut voltage Sensitivity o ~ “Displacement Sensitivity = aa =15V/mm 10 V voltmeter with 100 scales, 2 th of a division can be estimated 1 scale division = 22 V = 100 mv scale division = 755 V = 100m’ ) Minimum voltage that can be read = (2 | 100x107) = 20 mv (10) Minimum voltage reading Resolution of voltmeter Sensitivity 3 aa Sensitivity = 15 V/mm) 1x10 20x10 - S = 1.33 x 10 m= 133 pm 5 ‘wwe madeeasy.in26 | ESE 2020: MAINS TEST SERIES MADE EASY (i) Deflection per unit pressure= ; x =05%108m P = 1000 N/m? 05x10 Defl = 25x10" <0, 2 Deflection/ pressure = Thy) = 0.5 um/(Nm*) Overall sensitivity = (Deflection/Pressure x Sensitivity) -6,( 15 . - = (0.5x10 “Lsa) =75 mV/Nm? Minimum pressure that can be measured _ Minimum voltage that can be measured by voltmeter Sensitivity of the instrument (20x10) ~ 5x10") So, Resolution of instrument = 2.67 Nm? = 2.67 Nm? Q44 (b) Solution: () As the armature moves very fast, flux has no time to change. It remains 0.012 Wb. There is no induced emf in the excitation coil, so current changes instantaneously and AT reduces from 1200 to 750 corresponding to the magnetization curve of closed position, Thus, AW, = 0 rea OAF ~ area OCF area OAC By energy balance, AW, = AW, + W,, 0 = -area OAC + AW, Area EDAC AW,, = Area OAC= = $ (1200-750) «0.012 =27 Gi) Asthe armature moves very slowly, the flux increase while excitation current-remains constant. Therefore, the magnetic circuit state corresponds to a point B Area FABG ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 27 AW, = Area OBG-Area OAF = 1 Area FABC 2 So, AW,, = AW, -AW, = Larea FABG 2 0.012 1200 = 0.0192 W, Hence, AW, Fio.ors2 -0.012) 1200 = 4.32 J i p= ~ 1922 ii) 17 O8 Oe 1200 _ 495 @ 0012 1200 0.0192 Thus, R(total) = R(core) + R(air-gap) (100000 - 62500). 2x0.0 R,+0.75 x 10%r Now, Ry (relay oper = 62500 R, (relay closed) R.+ 2x Relay open - ; (0.012)? x0.75x10° = The minus sign means that the force tends to reduce the air-gap. Relay closed Plo= > ; (0.0192)? x0.75x10° 138.24 N ‘wwe madeeasy.in28 | ESE 2020: MAINS TEST SERIES MADE EASY Q4 (c) Solution: Drawing the small signal equivalent of the circuit, we get, Applying KCL at the output, we get, V, Va v, ‘ Tot tan Ves* T (i) => sL+—_ sCy sCy By voltage division rule, a C, V,= || Vo Ci) —+sL sCy Substituting equation (ii) in equation (i), we get, Vile sca Haein Foc] =0 ©. Thus, in the equation V, cannot be zero if we are receiving sustained oscillation at the output, thus, 2 SLC, Cy +2 L +96. +0)+[ +9 =0 Let s= jo, R ‘The condition for oscillation implies that both the real and imaginary part of the equation 2 (+9 Me jl +C,)—07LC, Cy] =0 must be zero. Thus, ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 29 and equating the real part to zero, we have, wZLC, 1 f al R 8m te (2 VLG gg yh = butt Q5 (a) Solution: Since it is a wave winding. A=2;1,= 100A; Z=960;P=8 (i) When the brushes are along GNP, the demagnetizing ampere turns are zero. The cross magnetizing 1,Z _ 100x960 2AP 2x2x8 3000 AT per pole (i) When they are shifted by 10° electrical degrees. . 8 The demagnetizing AT/pole = 45 %755 AT = = 30002 = 334 AT/poles The cross magnetizing AT/pole = 3000 - 334 = 2666 AT/pole (ii) When the shift is 10° mechanical. The electrical shift will be equal to Electrical shift = Mechanical degree x No. of pair of poles = 10% 4=40° LZ, 0 _ 100x960, 40 AP 180 2x8 180 1334 AT/pole Hence, cross magnetizing AT/pole = 3000 - 1334 = 1666 AT/pole. +. demagnetizing AT/pole = scoot MADE EASY ‘wwe madeeasy.in30 | ESE 2020: MAINS TEST SERIES MADE EASY Q5 (b) Solution: Considering 200° source and S.C the 10290° source we get, jisQ I 2020" 102 “52 Now, the current I can be calculated as 2020° 200° EEO 21 788.2-79.69°A j15+(-j5Q 102) 2+j11 Ix(-j5) ~ 10+ (-5) 1.7882 -79.69° x5Z-90° 11,1803 2 — 26.56° I = 0.8 2-143,13° = ~0.64 ~ j0.48 A Now, considering the 10.290° source and SC the 200° source we get, “62 1, ¥ 715.9) 2 109° 10.290" 10290" Thus, I, =1.442.293.18°A (5) +(10Q] j15) 6.9332-3.18 f15__ 1.4423,293.18°x 15290" 10+ j15 18.027 256.31° 1.2.2126.87° A = -0.72 + j0.96 A = I+ 1" = 1.4422 2160.56°A toa = 1-442 2160.56? A Q5 (¢) Solution: () The Hall voltage can be given as, Vy = EyW = -(165 * 10°) (6 x 10) Vy = -0.825 mV Gi) Since the value of Hall voltage is negative, the type of semiconductor has electrons as their majority carriers. Hence, the semiconductor is n-type. ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 34 (ii) The majority carrier concentration can be calculated as -1,B, | ~(0.5x10~)(6.5x10-) mS qdVq (1.6x107) (5x10) (-0.825x10~) n = 4.92 x 107! m= 4.92 * 1015 cm Q5 (d) Solution: A ferrofluid is a stable dispersion of ferromagnetic particles (e.g. 7 Fe,Oy Fe,O,) in a liquid. The liquid is usually oil or water. A typical ferrofluid usually contains 3 to 8 volume % nanoparticles and about 10 % surfactant. The particles in the ferrofluid remain suspended due to the Brownian motion and are prevented from coagulation by the surfactant coating on their surfaces, In the absence of a magnetic field, the net magnetic moment of the assembly is zero because their moments point in random directions. In a magnetic field gradient, the whole fluid moves to the regions of the highest flux. A magnetic field can therefore be used to position and hold the ferrofluid at a desired location. An application of this effect is the use of ferrofluids as bearings for a rotating shaft. Another important property of the ferrofluids is a significant increase in viscosity in the presence of amagnetic field. As the liquid is sheared, the particles tend to keep their moments aligned in the field direction and offer resistance to the shear force. This property is used for 4 Shaft Yn N > Ferrofluid as bearing for a rotating shaft damping applications in the shock absorbers of automobiles and in CD and DVD player systems. A commercially successful application of ferrofluids is in loudspeakers. By placing the voice coil of the loudspeaker inside the ferrofluid surrounded by the field of a permanent magnet, three effects are achieved simultaneously: (a) positioning of the coil in the center position (b) damping of the membrane and (c) conducting away of the heat generated by the coil. The ferrofluids have found several applications in addition to those indicated above e.g, for forming seals between regions of different pressures, magnetic ink printing, electromagnetic drug delivery, etc. ot MADE EASY ‘wwe madeeasy.in32 | ESE 2020: MAINS TEST SERIES MADE EASY Q5 (e) Solution: @ +h (18h, b dh \ {Iq 1 he = 32 <0m 05 20 10+20=30A (10 200.024 220.025 | = + 0.0233 30 30 Fractional error in /, 0.025 In percentage form %, —— = 2.33% 30 T= 304 2.33 = (30+0.7) A 700” (30 + 0.7) — at] (an 2) = ¥(0.2) +(0.5)? = 0.538 A [: ot ' Oh } (ah (i) Standard deviation of / T= (30-4 0.538) A Errors as standard deviation has less effect on total current. Q66 (a) Solution: @ N, = 5% 10% cmp, = 120 em? Vs 0° cm By, = 440 cm? V7 st Ea (0.0259 V) (120 em? V's')=3.10cem’s? 4 kT wy, = (0.0259) (440) = 11.39 cm? s D, =, = (3-10) (5x10) =1.2x104 em=1.2um [D,,, = (11.39) (417x107) = 21.810 em = 21.8 um Diffusion length are, —_L, ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 33 L, < Mechanical length of 5 um. L,, < Mechanical length of 100 pm Thus, we have a long diode. 5x10" x10" | 2 “ado N (ii) The built-in potential, o|. (0.0259) | Gii) To calculate the forward current when V = 0.6 V, we need to evaluate both the diffusion and recombination components to the current, Itis likely that the diffusion component will exceed the recombination component at this forward bias, Assuming that the forward current is only due to minority charge carrier, we get, v v I, < |-1|=I,exp| > [teh D, D, AJ, = Agr? || Px}, Pn LiNp J) (1nNa Agn? Dy, I >> N Api, (2 N>> Np) (0.01) (1.6107) (1x10)? (11.39) (21.8x107) (107) 8.36 x 10-4 A = 0,084 pA Then the diode current is equal to v Lexp| & erly, | = 0.96 «10 A= 0.96 mA I Where, I 8.36x 1074) oo 25] (0.0259) @ 1,@73K) _ { 7,(373K) 1,@00K) — | n,(300K) 1,373K) ~ 0.836nA . At 100°C, the forward current with 0.6 V across the diode is v]_ 10 (0.6) (300) I tex| F |-@asxa0 dese] Soe aT =01A ‘wwe madeeasy.in34 | ESE 2020: MAINS TEST SERIES MADE EASY Res (V,+V,) _ [2(11.9) (8.85x10™) (0.877 +5) apo (1.6x107") (1077) = 0.88 um The thermal generation current with V, =5 V is _ gAWn, _ (16x10) (0.01) (0.88x10) (1x10) een ¢ (10-*) 141x10° A=14nA ) w Q6 (b) Solution: Now, Van *+| Vip [+ V 2s We can follow a similar process from Qu and Qp. W/E)” TE Veg = Ve 1 1 1 Your = Ve [Vir + V2 | eerie eum Thus, | JR 7D." R702 T 1 bias | | VKW 7D (RW 7D 2 i. 1 1 J, = 2x10-3 | 14%250x10° _V2x100x10% T T + | ¥2x250x10° ¥4x100x10~ | = 2% 10 x 1167 33 mA ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 35 Q6 (c) Solution: At time f = 0, circuit element is 50 @ is in series with 0.1 H inductance with zero initial condition. Hence, current i(t) for i> 0 is di(t) soit) +012 = 100u(t) ‘Taking Laplace transform on both side 100 (60+ 0.18)I() = — 100 qooof1_ 4 19 = SG0+0.1s) ~ 500|s s+500 i() = 2(1 - eS) A Hence, in the interval 0 < ¢< 4 ms, the current i() = 20-2) A 5004 i(4ms) al -e 1000 ) (1—e?) =1.729 Amp. At time t= 4 ms, circuit parameter is changed with initial current i(0°) = 1.729 Amp. Now the current equation for t > fis 5Oi(t) + 100%(t) +0. 140 = 100V 150i(t) +0. 140 = 100V Taking Laplace transform from both side 100 1501(8) + 0:151(8) -0.1((0")) = = i(0*) = i(0*) =1.729 Amp Taking Laplace transform we get, 100 0.1729 Is) = Set 5(150++0.18) ” (150+-0.1s) 2/1 1 0.1729 16) = 3] 57 + s s+1500 |” 0.1(6+1500) it) = 2a 5008 ) 4 1.729629 ‘wwe madeeasy.in36 | ESE 2020: MAINS TEST SERIES i) = Zane Ba .729¢-9 i(t) = (1.06e >" 40.667) Amp for £>4ms Q7 (a) Solution: () Core cross-section area, Aq = (10 * 10)(10 * 10) 0 m? AT required c 6, = BA,=14* 107 Wb Lh 150x107 + “Grd 3000x109 ~ 998 * 10°A/ Wh Core reluctance R, Total mmf needed, F(total) = 6,8, ~ 557 AT Coil 2 produces F, = 2 800 = 1600 AT F(total) = F, + F, 557 = F, + 1600 Required I, Thus, the current direction is out of the terminal ‘a’ B.=14T Energy stored in the core Gi) Leg We= ZR? = $x398 10° x (1410)? 90 my (ii) Self-inductance coil 1 Self-inductance coil 2 ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 37 As their is no leakage. K = 1 M = Jl; = V04x16 =08H Q7 (b) Solution: When R, change to (R, + AR,), E E LR, R== (RR =R, DR eR Ray RR) ws 7 LR 8 (Rs EAR) +Ry Voltage between point b and d= Vy, E E, -(R5 £AR3) Vo Ew, y, = —E(&#AR,) _E 0 (Ry +R; 4AR3) 2 As, Rs = Ry | eeee +) 2R,4AR, 2 . o[ 2st 84h) _ ECAR) 2(2R, £AR;) 2(2R3 £ARs) For, ARs cc = AR, << R, R . So, q Y, E (#AR3) 4° R AR. Vy « ARs ae RS ‘wwe madeeasy.in38 | ESE 2020: MAINS TEST SERIES MADE EASY Condition for maximum sensi R R. For balance, R . R For slight unbalance, Vy = Egg - Egy= [eee R,+R,£AR, Ry +R, R; R. s Rk Yo= da aRaak R Ok | 4 tRy EAR, Ry +Ry ERsARs _ ER,AR, (Ry +R,) FARS(R3#R,) (Ry +R,P As, AR, (Ry + Ry) <<(Ry + Ry? Let, Sy = Voltage sensitivity of galvanometer “Vy ER,AR, (Ry + Ry)? Bridge sensitivity = @/AR, /R; SyERsRy SyE-RsRy (Ry +R) Ry +2R3Ry +2 Condition for maximum sensitivity, Bai Ry SVE 5,2 = with ® =4 4 Ry Q7 (0 Solution: Let I, = 0, ice,, port 2 is open circuited 19; 19 1, +2,-D = 31-21 (1) ‘wwe madeeasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 39 Applying KVL, to closed path V, = 1 +1+2V, +21 -V, = 1,431 V, = -h)-31 2) Thus, from equation (1) and (2) we get I 3, - 2(-4l,) a v, -%| 2-80 a To Let I, = 0, ie, port 1 is open circuited. As 1 @ connected to terminal is carrying zero current, hence it can be removed thus, y rr. % goa goo y (h-Dt Applying KVL at the output side V, = Ip + 2-1) Applying KVL to second loop including V,, V, = 1,-2V, +31 Vv, = 2 = 2(2) +31 > 0.02584 eV at 300 K or 0,0626/r = 0.5 x 0.02584 = 0.1292 (say) or r= 0.5 nm Hence the quantum dot should have a radius of the order of 0.5 nm for this effect to be observable at room temperature. scoot MADE EASY ‘wwe madeeasy.in42 | ESE 2020: MAINS TEST SERIES MADE EASY Q8 (b) Solution: When the BE junction is forward biased, holes are injected into the base, giving an emitter current I; qj and electrons are injected into the emitter, giving an emitter current of Tz (ccctrony- The total emitter current is therefore, Te = Tr quote * Le (tecron) Only the holes injected into the base are useful in giving a collector current because only they can reach the collector. Injection efficiency is defined as Tepnote) 1 Teqhote) + Heyetecron) 7 4 /8Cleton) Teqhote) But, provided that W, and W, are shorter than minority carrier diffusion length 2 exp) Ven I, ny Expl so (| 2 GAD (emitter) Mi V, and Teetaton) 7 NS OP a —_1 1 Nos ceninen La We Bis ase) Q8 (c) Solution: The counter has only four states : 3, 4, 6, 7. Thus the maximum number of flip-flop to be used are (7<2) A counter using three flip-flops can have eight states. So, unused states are 0, 1, 2 and 5. ‘Thu, the state excitation table can be drawn as PS NS Excitation BAA! ASA! Bl bh &Ih & ora} 100;1 x}xa]{x a 100/11 0}/x 0/1 x}]o x 110/11 21/x 0} xX o]1 x 111{011;/x 1/Xx o}x 0 comet MADE EASY www. madecasy.inMADE EASY Mock Test :3 E & T ENGINEERING | 43 ‘The minimal expressions : From the excitation table, we can see 2 222 o_o 10 o_o 10 0 0 x 1 Thus, the circuit can be drawn as ho Qi le hh Q, les Qs Kw Ql | K Q Uk @ ‘To test that the counter is self starting or not PS: Present Input NS Bal b Bl bh lh B | ®A% ooo/10]/11J/o1/110 oo1rj/i1aifiij11 1120 o1o0/10]/11J/o1, 100 rao1f11]{1o0]1 0) 011 scoot MADE EASY ‘wwe madeeasy.in44 | ESE 2020: MAINS TEST SERIES MADE EASY ‘The complete state diagram for the designed circuit is as below PS Reset B2Aal Rk ooo} a oo1f a o 10] a a 3 R=Q,0, +230, Thus, the circuit can be modified as below to make the counter go to state 3 when any invalid state occurs : —_{— PRE. PRE, ho Q oh & K aH K, Q Clk scoot MADE EASY ‘wwe madeeasy.in