Ls MADE ERSY India's Best Institute for IES, GATE & PSUs ESE 2020 : Mains Test Series UPSC ENGINEERING SERVICES EXAMINATION Electronics & Telecommunication Engineering Mock Test-3 Full Syllabus Test : Paper-I Name Roll No Test Centres Student's Signature Delhi Bhopal] Nelda] Jaipur Indore Lucknow?) Pune Kolkata] Bhubaneswar] Patna] Hyderabad} Dene Ud (RE RGLL UL Question No. Marks Obtained Do furnish the appropriate details in the re answer sheet (viz. Name & Roll No}. Ql Answer must be written in English only a2 Use only black/blue pen. ly pe a3 ‘The space limit for every part of the 4 uestionis specified inthis Question Cum 2 ‘Answer Booklet. Candidate should write Section-B the ansiverin the space provided Qs Any page or portion ofthe page leftblank a6 in the Question Cum Answer Booklet a rust be cleatly struck off , as Last two pages of this booklet are provided for rough work. Stike off Total Marks these two pages after completion of the Obtained examination Signature ofFvaluator Cross Checked by Corp. office: 44-A/1,Kalu Sarai, New Delhi-16 | Ph: 011-45124612, 9958995830 | Web: wwwmadeeasyinMADE EASY Question Cum Answer Booklet —_| Page 1 of 58 Donat ‘his margin Q1 (a) Explain the classification of errors in measurement, explain systematic errors giving, suitable examples. Also explain how systematic errors can be minimised. [12 marks]MADE EASY Question Cum Answer Booklet —_| Page 2of 58 Donat ‘his margin Q1(b) Consider the transfer characteristic of CMOS inverter shown in figure below : O Vp Vn VeVi Yoo- Vr Vig vi Calculate the value of noise margin high (NM, and the value of noise margin low (NM,). [Assume both the transistor are matched ie. K,,= K,] [12 marks]MADE EASY Question Cum Answer Booklet Page 3 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet —_| Page 4 of 58 Donat ‘his margin Q1 (0) Consider the diagram for the equivalent circuit of a single phase 4 kVA, 200/400 V, 50 Hz transformer referred to primary side as shown in the figure below The test results of the transformer were O.C test 200 V, 0.7 A, 70 W on low voltage side. S.C test 15 V, 10 A 80 W on HV side. Calculate the value of R, Gi) X, R, (iv) X, [12 marks]MADE EASY Question Cum Answer Booklet Page 5 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet —_| Page 6 of 58 Donat wt ‘his margin Q1(d) Consider the circuit shown in the figure below: 500 wv gon “7 = The switch is moved from point (N) to (1) at t= 0, then the switch is moved to position (2) after 1 ms, Find the time at which the voltage across the resistor is zero for > 1 ms. [12 marks]MADE EASY Question Cum Answer Booklet Page 7 of 58 Donat ‘his margin Q1(e) Explain Silsbee’s rule for superconductors. Also give some applications of superconductors. [12 marks]MADE EASY Question Cum Answer Booklet Page 8 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet —_| Page 9 of 58 Donat wt ‘his margin A lawn-sprinkling system is controlled automatically by certain combinations of the following variables. Season (S = 1, if summer ; 0, otherwise) Moisture content of soil (M = 1, if high ; 0, if low) Outside temperature (T= 1, if high ; 0, if low) Outside humidity (H = 1, if high ; 0, if low) ‘The sprinkler is turned on under any of the following circumstances. 1, _ The moisture content is low in winter. 2. The temperature is high and the moisture content is low in summer. 3. The temperature is high and the humidity is high in summer. 4, ‘The temperature is low and the moisture content is low in summer. 5. The temperature is high and the humidity is low, Use a K-map to find the simplest possible logic expression involving the variables S, M, T and H for turning on the sprinkler system and realise using two input basic gates. [20 marks]MADE EASY Question Cum Answer Booklet Page 10 of 58 Donat ‘his marginDonat | Page 11 of 58 | sre" ‘his margin @ | MADE EASY ouestion cum Answer Booklet Q.2(b)| Explain the piezoelectric phenomenon. Name two piezoelectric materials, Draw the equivalent circuit with appropriate cable connection model and charge amplifier. Obtain transfer function between amplifier output and input displacement to the piezoelectric device, [20 marks]MADE EASY Question Cum Answer Booklet Page 12 of 58 Donat ‘his marginonet @| MADE EASY Question cum Answer Booklet | Page t30f 58 |e Q2 (0) A3-phase induction motor has a starting torque of 80% and a maximum torque of 200% of the full-load torque. Find (Slip at maximum torque. (ii) Full load slip (iii) Rotor current at starting in terms of full load current. (iv) Factor by which the rotor resistance must be increased to give a starting torque of equal to of the full load torque. [20 marks]MADE EASY Question Cum Answer Booklet Page 14 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 15 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ age 160f 58 Donat wt ‘his margin Q3 (a) A photoconductive cell has a CdS crystal 1 mm long, 1 mm wide and 0.1 mm thick with electrical contacts at the end, so the receiving area of radiation is 1 mm*, whereas the area of each contacts is 0.1 mm?. The cell is illuminated with a blue radiation of wavelength 450 nm and intensity 1 mW/cm®, For unity quantum efficiency and an electron recombination time of 1 ms, calculate () The number of EHP’s generated per second. (ii) The photoconductivity of the sample (iii) The photocurrent produced if 50 V is applied to the sample. (Assume that CdS photoconductor is a direct bandgap semiconductor with an energy gap E, = 2.6 eV, electron mobility 4, = 0.034 m? V- s*, and hole mobility 1, = 0.0018 m? V~! s+) [25 marks]MADE EASY Question Cum Answer Booklet Page 17 of 58 Donat ‘his marginDoret @ MADE EASY Question Cum Answer Booklet —_| Page 18of 58 | te Q.3(b)| How does the density of state vary in 0D, 1D and 2D nanostructures? [15 marks]MADE EASY Question Cum Answer Booklet Page 19 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | Page 200f 58 Donat wt ‘his margin Q3 () The reduced incidence matrix of a graph is given as 0 0 0 4 -1-10 0 o 4-7 () Draw the graph. (ii) How many trees are possible (iii) Write tie-set and cut-set matrix considering any possible tree for the graph. [20 marks]MADE EASY Question Cum Answer Booklet Page 21 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | Page 22of 58 Donat wt ‘his margin Q4 (a) ALVDT has an output of 6 V rms when the displacement is 0.4 x 10- m, Determine the sensitivity of this instrument in volt/mm. A 10 V voltmeter with 100 scale divisions is used to read the output. Two tenths of a division can be estimated with ease. Determine the resolution of the voltmeter. The above arrangement is used in a pressure transducer for measuring the deflection of a diaphragm. The diaphragm is deflected by 0.5 * 10 m, by a pressure of 1000 N/m?, Determine () Resolution of voltmeter. (ii) Resolution of this instrument. [20 marks]MADE EASY Question Cum Answer Booklet Page 23 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 24 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | Page 25 of 58 Donat wt ‘his margin Q4(b) An attracted armature relay is shown in the figure below: Wb) close position open position AT\in) 07501200 0.05 mm ( _ Iftherelay armature move very fast from open to close position. Find the mechanical work done. (i) If in part (i) the relay armature moves very slow, find the work done. (iii) Calculate the force on the armature in open and close position. [20 marks]MADE EASY Question Cum Answer Booklet Page 26 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 27 of 58 Donat ‘his margin Q4 () Consider the circuit shown in the figure below Assuming V, # 0, calculate the frequency of sustained oscillation. Also, determine the condition for which this oscillation will occur. [20 marks]MADE EASY Question Cum Answer Booklet Page 28 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 29 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ Page 30of 58 Donat ‘his margin Q5 (a) An8 pole generator has 960 armature conductors and a wave winding, The armature current is 100 A. Determine the demagnetizing and cross magnetizing ampere turns due to armature reaction if () Brushes are along Geometric Neutral Axis. (ii) Brushes are shifted by 10° electrical degree (iii) Brushes are shifted by 10° mechanical from GN Axis. [12 marks]MADE EASY Question Cum Answer Booklet | —_ Page 31 of 58 Donat ‘his margin Q5(b) Determine the current through 10 @ resistance of the network shown in the figure below using superposition theorem. cy | jib a na 109 10290° [12 marks]MADE EASY Question Cum Answer Booklet Page 32 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ Page 33 of 58 Donat wt ‘his margin Q5 () Consider a silicon Hall effect device which is used for the experiment as shown below: ‘The device has dimensions d=5 x 10~ cm, W=5 x 10cm and L = 0.5 cm. The electrical 5 mA, V, = 1.25 V and 16.5 mV/cm, then determine: parameters measured as the result of the experiment are [, = B,=6.35 x 10T, If the induced Hall electric field is E, () Hall voltage (V,,) (ii) The type of semiconductor (iii) The majority carrier concentration [12 marks]MADE EASY Question Cum Answer Booklet Page 34 of 58 Donat ‘his margin Q5(d) What are Ferrofluid? List its properties and uses. [12 marks]MADE EASY Question cum Answer Booklet | Page 35 of 58 Donat wt ‘his margin Q5 (e) and in other is /, = 204 0.5 A. Determine the value of the total current /= () considering the errors in [, and /, as limiting errors, (ii) considering the errors as standard deviations, Comment on the result. A circuit consists of two branches in parallel. The current in one branch is , = 10+0.2 A, I, + ly [12 marks]MADE EASY Question Cum Answer Booklet Page 36 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ Page 37 of se Donat wt ‘his margin AnabruptSip*n junction diode has cross-sectional area of 1 mm?, an acceptor concentration lc, and a donor concentration of 10 arsenic atoms sm on the n-side. The lifetime of holes in the n-region is 417 ns, whereas that of electrons in the p-region is 5 ns due to a greater concentration of impurities (recombination centres) on that side. Mean thermal generation lifetime (t,) is about 1 us. The length of p-side and side regions are 5 and 100 microns, respectively. (Assume 1,(27°) = 10! em’, € 44) = 11.9, , = 120 em? V1 sand , V,(27°C) is equal to 25.9 mV) i) Calculate the minority diffusion lengths and determine what type of diode it is. Calculate the built-in potential across the junction. Calculate the current when there is a forward bias of 0.6 V across the diode at 27°C. (Assume the current is by minority carrier diffusion) 440 cm? V's“! and ri) (iv) Calculate the forward current at 100°C when the voltage across the diode remains at 0.6 V. (Assuming n,(373K) = 10% cm and the temperature dependance of n dominates over those of D, L and) (v) Calculate the reverse current when the diode is reverse-biased by a voltage V, = 5 V. [25 marks]MADE EASY Question Cum Answer Booklet Page 38 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 39 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 40 of 58 Donat ‘his margin Q.6(b) Consider the CMOS circuit shown in the figure below v, Kj, =250A/V?, K, =100uA/V?, if V,, = 0.5 V, the value of | \ Ww) th and (7 (0 =2. If yg, = 2mA then calculate the value of Ip. r [15 marks]MADE EASY Question Cum Answer Booklet Page 41 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | Page 42 of se Donat ‘his margin Q6 (c) Consider the circuit shown in the figure below: ‘The switch 1 is closed at f = 0 and then is at f= 4 ms, switch 2 is opened. Find () The current for the interval 0 < [<4 ms. (ii) The current for f> 4 ms. [20 marks]MADE EASY Question Cum Answer Booklet Page 43 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 44 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ Page as of 58 Donat wt ‘his margin Q7 (a) A cast steel core is shown in the figure below: Coil 1, [+ Thickness 10 mm. hb — a Coil 2 The core has uniform cross-section and has metal core length 150 cm. It is wound with two coils, The coil 2 carries a current of 2A. () Fora core flux densi the direction and magnitude of current in coil 1 (Assume p, = 3000) of 1.4T in direction indicated in the figure, then calculate (ii) With both coils carrying currents as found in part (i), find the energy stored in the core, (iii) Find the inductances L,, L, and mutual inductance between coils, (Assume there is no leakage of flux.) [20 marks]MADE EASY Question Cum Answer Booklet Page 46 of 58 Donat ‘his marginonet @| MADE EASY Question cum Answer Booklet | Pages7ot se [inn Q7(b)| A Wheatstone bridge has resistances R,, R,, R, and R, in its four arms. The bridge is excited by E volts de. Assuming that the ratio of arms R, and R, are equal, the bridge is initially balanced with R, equal to Ry. A slight unbalance (R, * AR,) is created by Ry, Show that the unbalance voltage, V,, is directly proportional to (AR;/R;) as long (AR,/R,) << 1. Derive the condition for maximizing the sensitivity. [20 marks]MADE EASY Question Cum Answer Booklet Page 48 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 49 of 58 Donat ‘his margin a7 Consider the two port network shown in the figure below: 19 19 3h 19 + ¥ £0 go y, Calculate the [Z], [Y1, [h] and [T] parameter for the network. [20 marks]MADE EASY Question Cum Answer Booklet Page 50 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 51 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet | —_ Page s2of se Donat wt ‘his margin Q8 (a) @ (i) Explain how quantum dot can be used to construct a nano capacitor. Also plot the V-I characteristic curve. Calculate the size of a sphere shaped quantum dot of Si that would produce observable single electron effect at room temperature. (Assume the energy change on charging of the quantum dot capacitor to be much larger than kT in order to observe the single electron effects. At 300 K, KT = 414 x 10 J = 25.84 meV and € ,.,) = 11.5) ri) [20 marks]MADE EASY Question Cum Answer Booklet Page 53 of 58 Donat ‘his marginDoret @ MADE EASY Question Cum Answer Booklet —_| Page S4of se |e Q8(b)| Consider the BJT transistor shown in the figure below Emitter Collector Ni de Ip Vee Ven Show that the injection efficiency of the emitter is defined as Emitter current due to minority carrier injected into the base Total emitter current —1 __ 14 No Wabn Na Web is given by Y= [15 marks]MADE EASY Question Cum Answer Booklet Page 55 of 58 Donat ‘his marginDonet @ MADE EASY Question Cum Answer Booklet —_| Page 56 of 58 | ste ‘his margin Q8 (c)] Design a JK counter that goes through states 3, 4, 6, 7 and 3. Test that the counter is a self starting counter or not. Design a combinational logic such that whenever it goes to an invalid state it comes back to state 3. [25 marks]MADE EASY Question Cum Answer Booklet Page 57 of 58 Donat ‘his marginMADE EASY Question Cum Answer Booklet Page 58 of 58 Donat ‘his marginSpace for Rough WorkSpace for Rough WorkSpace for Rough WorkSpace for Rough Work