MITSUBISHI IGBT MODULES

CM600DY-12NF
HIGH POWER SWITCHING USE

CM600DY-12NF

¡IC ................................................................... 600A

¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack

APPLICATION
General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Tc measured point (Base plate)

110
93±0.25
14 14 14 4
E2 G2

6
62±0.25

(20.5)
80

30
15
G1 E1

C2E1 E2 C1

3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES

E2 G2

18 7 18 7 18 TAB #110. t=0.5

8.5

C2E1 E2 C1
+1.0
–0.5

21.2

LABEL
G1 E1
29

CIRCUIT DIAGRAM

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM600DY-12NF
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage G-E Short 600 V
VGES Gate-emitter voltage C-E Short ±20 V
IC DC, TC’ = 89°C*3 600 A
Collector current
ICM Pulse (Note 2) 1200 A
IE (Note 1) 600 A
Emitter current
IEM (Note 1) Pulse (Note 2) 1200 A
PC (Note 3) Maximum collector dissipation TC = 25°C 1130 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Main terminals M6 screw 3.5 ~ 4.5 N•m
Torque strength
— Mounting M6 screw 3.5 ~ 4.5 N•m
— Weight Typical value 580 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7.5 V

IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 µA

Tj = 25°C — 1.7 2.2
VCE(sat) Collector-emitter saturation voltage IC = 600A, VGE = 15V V
Tj = 125°C — 1.7 —
Cies Input capacitance — — 90 nF
VCE = 10V
Coes Output capacitance — — 11 nF
VGE = 0V
Cres Reverse transfer capacitance — — 3.6 nF
QG Total gate charge VCC = 300V, IC = 600A, VGE = 15V — 2400 — nC
td(on) Turn-on delay time — — 500 ns
tr Turn-on rise time VCC = 300V, IC = 600A — — 300 ns
td(off) Turn-off delay time VGE = ±15V — — 750 ns
tf Turn-off fall time RG = 1Ω, Inductive load — — 300 ns
trr (Note 1) Reverse recovery time IE = 600A — — 250 ns
Qrr (Note 1) Reverse recovery charge — 8.7 — µC
VEC(Note 1) Emitter-collector voltage IE = 600A, VGE = 0V — — 2.6 V
Rth(j-c)Q IGBT part (1/2 module) — — 0.11 K/W
Thermal resistance*1
Rth(j-c)R FWDi part (1/2 module) — — 0.18 K/W
Rth(c-f) Contact thermal resistance Case to heat sink, Thermal compound Applied*2 (1/2 module) — 0.02 — K/W
Rth(j-c’)Q Thermal resistance Case temperature measured point is just under the chips — — 0.046*3 K/W
RG External gate resistance 1.0 — 10 Ω
*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM600DY-12NF
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
1200 4

SATURATION VOLTAGE VCE (sat) (V)

VGE = 15 Tj = 25°C VGE = 15V
20V
COLLECTOR CURRENT IC (A)

1000 13

COLLECTOR-EMITTER
12
3
800

600 2
11

400
1
10
200 Tj = 25°C
8 9 Tj = 125°C
0 0
0 2 4 6 8 10 0 200 400 600 800 1000 1200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 104
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7
5
EMITTER CURRENT IE (A)

3
8
COLLECTOR-EMITTER

103
6 7
5
3
2
4
IC = 600A
102
IC = 1200A 7
5
2
3
Tj = 25°C
IC = 240A 2
Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 1 2 3 4 5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
103 103
7 7 td(off)
CAPACITANCE Cies, Coes, Cres (nF)

5 5 td(on)
3 3
tf
SWITCHING TIME (ns)

2 2

102 102
7 Cies 7
5 5 tr
3 3
2 2
Conditions:
101 101 VCC = 300V
7 Coes 7
5 5 VGE = ±15V
3 3 RG = 4.2Ω
2 Cres 2 Tj = 125°C
VGE = 0V Inductive load
100 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM600DY-12NF
HIGH POWER SWITCHING USE

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part & FWDi part)
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 100
REVERSE RECOVERY TIME trr (ns)

7 7

THERMAL IMPEDANCE Zth (j–c)

5 Single Pulse

NORMALIZED TRANSIENT
5
3 TC = 25°C
2
3
2 10–1 10–1
Irr 7 7
5 5
102 trr 3 3
7 2 2
Conditions: IGBT part:
5 10–2 Per unit base = 10–2
VCC = 300V
7 7
3 VGE = ±15V 5 Rth(j–c) = 0.11K/W 5
RG = 4.2Ω FWDi part:
2 3 3
Tj = 25°C 2
Per unit base = 2
Inductive load Rth(j–c) = 0.18K/W
101 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TIME (s)

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
GATE-EMITTER VOLTAGE VGE (V)

VCC = 200V
16

VCC = 300V
12

0
0 1000 2000 3000
500 1500 2500 3500
GATE CHARGE QG (nC)

Feb. 2009