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6 6.0V
60
ID [A]
PD [W]
4
40
2 VGS=5.5V
20
0 0
0 25 50 75 100 125 150 0 5 10 15 20
10
10
ID[A]
gfs [S]
1
0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10
VGS[V] ID [A]
RDS(on) [ Ω ]
2.3
4
2.2
max.
3
2.1
typ.
2
2.0
1
1.9
1.8 0
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
2
2SK3532-01MR FUJI POWER MOSFET
6.5
6.0 12
Vcc= 180V
5.5
450V
5.0 max. 10 720V
VGS(th) [V]
4.5
4.0 8
VGS [V]
3.5
3.0 min. 6
2.5
2.0 4
1.5
1.0 2
0.5
0.0 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35
10
Ciss
0
10
IF [A]
C [nF]
-1
10
Coss
1
-2
10
Crss
10
-3 0.1
10
0
10
1
10
2 0.00 0.25 0.50 0.75 1.00 1.25 1.50
Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω 800
E(AS)=f(starting Tch):Vcc=90V
10
IAS=2A
tf
600
2
10
td(off)
EAS [mJ]
t [ns]
400 IAS=4A
td(on)
1 IAS=6A
10
tr 200
0
10 0
-1 0 1
10 10 10 0 25 50 75 100 125 150
3
2SK3532-01MR FUJI POWER MOSFET
1 Single Pulse
10
0
10
-1
10
-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]
0
10
Zth(ch-c) [°C/W]
-1
10
-2
10
-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
t [sec]
http://www.fujielectric.co.jp/denshi/scd/