DC-20 GHz Distributed Power Amplifier

Features Functional Block Diagram

► Ultra wideband performance 3 4

► High linearity ACG1 ACG2

► High output power

► Excellent return losses
► Small die size RFOUT & Vdd
5
Vgg2

Description
RFIN
1

The CMD201 is wideband GaAs MMIC dis- Vgg1 ACG4 ACG3

8 7 6
tributed power amplifier die which operates
from DC to 20 GHz. The amplifier delivers
greater than 12 dB of gain with a correspond-
ing output 1 dB compression point of +29 dBm
and output IP3 of 38 dBm at 10 GHz. The
CMD201 is a 50 ohm matched design which
eliminates the need for RF port matching. The
CMD201 offers full passivation for increased
reliability and moisture protection.

Electrical Performance - Vdd = 10.0 V, Vgg1 = -0.55 V, Vgg2 = 5.0 V , TA = 25 oC, F = 10 GHz
Parameter Min Typ Max Units
Frequency Range DC - 20 GHz
Gain 12 dB
Noise Figure 3.4 dB
Input Return Loss 16 dB
Output Return Loss 17 dB
Output P1dB 29 dBm
Supply Current 400 mA

ver 1.4 0218

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300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Specifications

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Rating Parameter Min Typ Max Units

Drain Voltage, Vdd 12.0 V Vdd 8.0 10.0 12.0 V
Gate1 Voltage, Vgg1 -2.0 to 0 V Idd 350 400 450 mA
Gate2 Voltage, Vgg2 6.0 V Vgg1 -0.55 V
RF Input Power +30 dBm Vgg2 5.0
Channel Temperature, Tch 150 °C Electrical performance is measured at specific
test conditions. Electrical specifications are not
Power Dissipation, Pdiss 5.43 W guaranteed over all recommended operating con-
ditions.
Thermal Resistance 11.9 °C/W
Operating Temperature -55 to 85 °C Operation of this device outside the maximum
ratings may cause permanent damage.
Storage Temperature -55 to 150 °C

Electrical Specifications, Vdd = 10.0 V, Vgg1 = -0.55 V, Vgg2 = 5.0 V, TA = 25 oC

Parameter Min Typ Max Min Typ Max Units

Frequency Range DC - 6 6 - 20 GHz

Gain 8 11 9 12 dB
Noise Figure 5 3.5 dB
Input Return Loss 15 17 dB
Output Return Loss 10 18 dB
Output P1dB 27 29.5 25 29 dBm
Output IP3 40 35 dBm
Supply Current 300 400 500 300 400 500 mA
Gain Temperature
0.009 0.014 dB/°C
Coefficient
Noise Figure Temperature
0.01 0.012 dB/°C
Coefficient
ver 1.4 0218

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300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Typical Performance

Broadband Performance, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, Idd = 400 mA, TA = 25 oC

15 7

10 6
S11
S22
5 S21 5
NF

Noise Figure/dB
Response/dB

0 4

-5 3

-10 2

-15 1

-20 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Frequency/GHz

Narrow-band Performance, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, Idd = 400 mA, T=25 oC
15 7

10 6
S11
S22
5 S21 5
NF
Noise Figure/dB
Response/dB

0 4

-5 3

-10 2

-15 1

-20 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz ver 1.4 0218

Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Typical Performance

Gain vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

15

14

13

12

11

10

9
Gain/dB

7
+25C
+85C
6 -55C
5

0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

Noise Figure vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

10

+25C
9 +85C
-55C
8

7
Noise Figure/dB

0
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz
ver 1.4 0218

Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Typical Performance

Output Power, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V, TA = 25 oC

35
34
P1dB
33
32
Psat

31
30
29
28
Response/dBm

27
26
25
24
23
22
21
20
19
18
17
16
15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

P1dB vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

35
34 +25C
33 +85C
32 -55C
31
30
29
28
27
P1dB/dBm

26
25
24
23
22
21
20
19
18
17
16
15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz
ver 1.4 0218

Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Typical Performance

Output IP3 vs. Temperature, Vdd = 10 V, Vgg1 = -0.55 V, Vgg2 = 5 V

45
+25C
+85C
40 -55C

35
Output IP3/dBm

30

25

20

15

10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Frequency/GHz

ver 1.4 0218

Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Mechanical Information

Die Outline (all dimensions in microns)

247.00

114.00

3 4

5
1550.00
1384.00 2

863.00
728.00
1

411.00
8 7 6

162.00
1781.00
2058.50
2185.50
2820.00

Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 78 microns square
6. RF bond pads are 108 x 193 microns

ver 1.4 0218

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 RF in
RF in RF out
45 deg

Port B

Port A
Vgg Vdd Vdd VggVdd
(-) (+)

45 deg
Vgg (-)

DC-20 GHz Distributed Power Amplifier

Vgg Vdd Vdd
Pad Description RF in
Vgg Vdd Vdd
eg
For CMD146
3 Pad Diagram 4 5
Port B
Vgg For CMD146 LFT1

Vdd
4 Port A 5 Vctl Vgg 3
Vdd

4
LFT2
Vgg

Vgg (-)
LFT1 400 ohm
RF in To Gat
eg Vdd GND
Vgg
LFT2
20 ohm

GB 400 ohm RFin

RF in To Gates
Vgg Vctl
Vgg Vdd 5 Vdd
4 bit
20 ohm
2
Vgg Vdd Vdd
LFT3
GB
LFT4 RF out & Vdd

For CMD146
Vctl
1
RF out Ven RF inVdet

4 5
0.01 uF
Vdd LFT3
45LO
deg RF
4 dB 8 7 6
Vgg Vgg GB
LFT4 RF out & Vdd ACG3
Port B
4 RF out Vgg
Vdd ACG4
Functional Description 3 bit
5
Ven Vdet
Port A
0.01 uF LO RF 400 oh
4 dB 45 deg RF in T
IF
GND Vctl
Vgg RF in 20 ohm
0.01 uF Pad Function Description
GB Vgg
Schematic
Vgg Vctl Vgg Vdd Vdd

Vctl
Vee RF in Vgg2
IF
1 RF in 50 ohm matched
ACG1 input For CMD146 Vgg Vd
1 2 3 4 ACG2 4 bit
5 Vgg
RF out & Vdd
Vgg
ACG2
ACG3

Vdd Vdd Vdd ACG4

RF out Ven Vdet
LO RF RF
Power supply voltage
2 Vgg2 RF in Vgg2 RF in
GND
Decoupling and bypass caps required
GB

Vgg Vgg Vctl 45 deg

4 dB

Low frequency termination. Attach

A, B bypass
3, 4 ACG1, 2
ACG1 Port B
RF1, 2 out
IF
capacitor per application circuit ACG2 RF out & Vdd

3 bit
RF in RF out Port A Ven

RF out & Power supply voltage and 50 ohm matched

,3
LO RF RF

5
Vdd output 4 dB 45 deg
Vctl
Vee RF in ACG3 Vgg2
ACG4

Low frequency termination. Attach bypass

RF1, 2 in RF1, 2 out
IF

6, 7 ACG3, 4
capacitor per application circuit
Vctrl1 Vgg Vd
RF in
Vctrl2
LO

Vctl
Vee RF in Vgg2
Vctl
RF out
Vdd 1Power supply2voltage
Vctrl1
3 Vgg1 Vgg
4
IF1, IF2
8 Vgg1 Vctrl2
RF in
Vctl Decoupling and bypass caps required
Vdd Vdd Vdd

GND

Backside Ground Connect to RF / DC ground

Vgg Vgg Vc

ver 1.4 0218

Custom MMIC RF in RF out

300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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 DC-20 GHz Distributed Power Amplifier
Applications Information

Assembly Guidelines

The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically and
thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures
should be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity
to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.

The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.

Assembly Diagram

To Vgg2

0.1 uF CAP TO GROUND

0.1 uF BYPASS CAP

100 pF BYPASS CAP

To Vdd
(example: Presidio part 100 pF CAP TO GROUND
LSA1515B101M2H5R-L)

RF out
RF in

100 pF CAP TO GROUND

100 pF BYPASS CAP

0.1 uF BYPASS CAP 0.1 uF CAP TO GROUND

(example: Presidio part
MVB4080X104ZGK5R3L)

To Vgg1

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.4 0218

Custom MMIC
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 DC-20 GHz Distributed Power Amplifier
Applications Information

Application Circuit

100 pF 0.1 uF

3 Vdd

Vgg2 2
0.1 uF 100 pF
4
5 RF out
6
7

RF in 1
8 100 pF 0.1 uF

Vgg1
0.1 uF 100 pF

Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.
External DC block is required on RF input.

Biasing and Operation

The CMD201 is biased with a positive drain supply, a negative gate1 supply and a positive gate2 supply.
Performance is optimized when the drain voltage is set to +10 V. The recommended gate1 and gate2
voltages are -0.55 V and +5 V respectively.

Turn ON procedure:

1.Apply gate voltage Vgg1 and set to -0.55 V

2.Apply drain voltage Vdd and set to +10 V
3.Apply gate voltage Vgg2 and set to +5V

Turn OFF procedure:

1.Turn off gate voltage Vgg2

2.Turn off drain voltage Vdd
3.Turn off gate voltage Vgg1

ver 1.4 0218

Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com