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PD- 91380B
IRLL2705
HEXFET® Power MOSFET
l Surface Mount
l Dynamic dv/dt Rating D
VDSS = 55V
l Logic-Level Gate Drive
l Fast Switching
RDS(on) = 0.04Ω
l Ease of Paralleling
G
l Advanced Process Technology
l Ultra Low On-Resistance
ID = 3.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
1/22/99
IRLL2705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.040 VGS = 10V, ID = 3.8A
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.051 Ω VGS = 5.0V, ID = 3.8A
––– ––– 0.065 VGS = 4.0V, ID = 1.9A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = V GS, ID = 250µA
gfs Forward Transconductance 5.1 ––– ––– S V DS = 25V, ID = 1.9A
––– ––– 25 µA VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– 32 48 ID = 3.8A
Qgs Gate-to-Source Charge ––– 3.5 5.3 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 9.7 14 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time ––– 6.2 ––– VDD = 28V
tr Rise Time ––– 12 ––– ID = 3.8A
ns
td(off) Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω
tf Fall Time ––– 22 ––– RD = 7.1Ω, See Fig. 10
Ciss Input Capacitance ––– 870 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5
Notes:
Repetitive rating; pulse width limited by ISD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
VDD = 25V, starting TJ = 25°C, L = 15mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 3.8A. (See Figure 12)
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IRLL2705
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , D rain-to-Source C urrent (A)
10 10
3 .0V
3 .0 V
2 0µ s P U L S E W ID T H 2 0µ s P U L S E W ID TH
TJ = 25 °C A TJ = 15 0°C
1 1 A
0.1 1 10 100 0.1 1 10 100
V DS , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V )
100 2.0
I D = 3.8 A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
I D , D rain-to-So urce C urren t (A )
1.5
TJ = 2 5 °C
TJ = 1 50 °C
(N o rm alize d)
10 1.0
0.5
V DS = 25V
2 0 µ s P UL S E W ID TH V G S = 1 0V
1 0.0 A
A
3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
IRLL2705
1400 20
V GS = 0V , f = 1M H z I D = 3.8 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 4 4V
V G S , G ate-to-Source V oltage (V )
1200 C rs s = C gd V D S = 2 8V
C iss C o ss = C d s + C gd 16
C , Capacitance (pF)
1000
12
800
C oss
600
8
400
C rss 4
200
F O R TE S T C IR C U IT
S E E F IG U R E 9
0 A 0 A
1 10 100 0 10 20 30 40 50
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )
100 100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)
10µ s
I D , D rain Current (A )
10
TJ = 1 50 °C 100µ s
10
TJ = 25 °C 1m s
1
10m s
T A = 25 °C
T J = 15 0°C
V G S = 0V S ing le P u lse
1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )
IRLL2705
RD
QG VDS
VGS
10V QGS QGD D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Charge Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ 90%
12V .2µF
.3µF
+
V
D.U.T. - DS
10%
VGS VGS
3mA td(on) tr t d(off) tf
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Therm al R esponse (Z thJA )
100
D = 0 .5 0
0 .2 0
10 0 .1 0
0 .0 5
0 .0 2
0 .0 1
1 PD M
t
1
S IN G L E P U L S E t2
0.1
(T H E R M A L R E S P O N S E )
N o te s:
1 . D u ty fa c to r D = t / t
1 2
2. P e a k TJ = P D M x Z th J A + T A
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000
t 1 , R e c ta n g u la r P u ls e D u ra tio n (s e c )
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IRLL2705
250
ID
L D R IV E R
VD S 150
RG D .U .T +
- VD D 100
IA S A
20V
tp 0 .01 Ω
50
IAS
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IRLL2705
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRLL2705
Package Outline
SOT-223 (TO-261AA) Outline
W A FER
P A R T NU M B E R LO T CO D E
F L0 14
XXXXXX
IN TE RN A TIO NA L 31 4
RE CT IF IE R D A TE CO D E (Y W W )
LO G O Y = LA S T D IG IT O F TH E Y E A R
TOP W W = W E EK B O TT O M
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IRLL2705
Tape & Reel Information
SOT-223 Outline
4 .1 0 (.1 6 1) 0 .3 5 (.0 1 3 )
3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 )
2 .0 5 (.0 8 0 ) 1 .6 5 (.0 6 5 ) 0 .2 5 (.0 1 0 )
TR 1 .9 5 (.0 7 7 )
7 .5 5 (.2 9 7 )
7 .4 5 (.2 9 4 )
1 6 .3 0 (.6 4 1 )
7 .6 0 (.2 9 9 ) 1 5 .7 0 (.6 1 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
7 .1 0 (.2 79 ) 2 .3 0 (.0 9 0 )
6 .9 0 (.2 72 ) 2 .1 0 (.0 8 3 )
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S .
330.0 0 5 0.0 0 (1 .9 6 9 )
(13.000) M IN .
M AX.
1 8 .4 0 (.7 2 4 )
N O T ES :
M AX .
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 1 4 .4 0 (.5 6 6 ) 4
3 . D IM E N S IO N M E A S U R E D @ H U B . 1 2 .4 0 (.4 8 8 )
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 3
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http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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