APPLICATION NOTE

Thermal Optimization of GaN HEMT Transistor Power

Amplifiers Using New Self-heating Large-signal Model

Introduction

Gallium nitride power transistors have very high RF power densities which range from 4 to 12
watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
substrates have high thermal conductivity it is necessary to be aware of channel temperature rise incurred
by both DC and RF stimuli when designing power amplifiers. Thermal management is even more important
for broadband amplifiers (a very popular application) where drain efficiencies can vary considerably as a
function of frequency.

A new self-heating feature in Cree’s GaN HEMT large-

signal models automatically effects both DC and RF parameters
as a function of transistor drawn current. We will use the
CGH40025F transistor in a 2 to 6 GHz broadband amplifier and
demonstrate how the transistor operating temperature can be
minimized during the simulation phase of the design. The default
thermal resistance is set for the CGH40025F at 4.8 deg C/watt. The
operating case temperature (Tcase) is user defined. The self-heating engine automatically calculates the rise
in temperature (Trise) of the HEMT channel above Tcase.

Trise can be used as a function of other parameters

DCVS
ID=V1
V=2.15 V
such as frequency, output power
and efficiency. The paper shows
the direct lowering of Trise using
Rev. B

optimization in unison with the

RES
ID=R1
R=25 Ohm

PIPAD IND
CGH40025F_r6
ID=40025F1
Tcase=25
TLIN
ID=TL1
Z0=47.54 Ohm
TLIN
ID=TL2
maintenance of output power. Such
-006

ID=P1 RTH=4.8 Z0=10.4 Ohm CAP

ID=L2 EL=21 Deg
PORT Z1=50 Ohm L=2481 nH EL=17.42 Deg ID=C5
IND F0=4000 MHz

thermal optimization assures reliable

P=1 Z2=50 Ohm CAP F0=4000 MHz C=3.057 pF
Z=50 Ohm ID=L1 ID=C2 I_METER
DB=1.031 dB L=1.311 nH 2
C=11.53 pF ID=AMP1
ote: APPNOTE

1 IND CAP PORT

operation as well as improved

ID=L3 ID=C4 P=2
L=0.6882 nH C=4.958 pF Z=50 Ohm
CAP
ID=C3 CAP 4 Th 3
C=0.8985 pF ID=C1
C=2.525 pF

V_METER
performance since the transistors are
PORT_PS1 ID=VM1 I_METER
P=1 ID=AMP2

operating cooler.
Z=50 Ohm
PStart=-10 dBm
PStop=39 dBm
PStep=1 dB

DCVS
Application N

ID=V2
V=28 V

Subject to change without notice.

1
www.cree.com
Basic Amplifier Design

2 GHz to 6GHz Demonstration Amplifier Simulation
DCVS
ID=V1
V=2.15 V

RES
ID=R1
R=25 Ohm

TLIN TLIN
CGH40025F_r6 ID=TL1 ID=TL2
ID=40025F1 Z0=47.54 Ohm Z0=10.4 Ohm CAP
Tcase=25 EL=21 Deg EL=17.42 Deg ID=C5
IND RTH=4.8 C=3.057 pF
F0=4000 MHz F0=4000 MHz
ID=L2
PIPAD
L=2481 nH
ID=P1
PORT Z1=50 Ohm IND CAP I_METER
ID=C2 2
P=1 Z2=50 Ohm ID=L1 ID=AMP1 PORT
Z=50 Ohm DB=1.031 dB L=1.311 nH C=11.53 pF P=2
IND CAP
1 Z=50 Ohm
ID=L3 ID=C4
L=0.6882 nH C=4.958 pF

4 Th 3
CAP CAP
ID=C3 ID=C1
C=0.8985 pF C=2.525 pF

V_METER I_METER
ID=VM1 ID=AMP2

PORT_PS1
P=1
Z=50 Ohm
PStart=-10 dBm
PStop=39 dBm
PStep=1 dB
DCVS
ID=V2
V=28 V

Figure 1 - 2 to 6 GHz, 25 W Broadband PA Schematic

Figure 1 shows the basic schematic of a broadband, 2 to 6 GHz, power amplifier utilizing a Cree
CGH40025F GaN HEMT transistor. This device operates from a nominal 28 volt rail. The transistor symbol in
the schematic shows a 4 port device – gate, drain, source and temperature monitor – a voltmeter serves as
the “thermometer”.

Initial circuit design was concentrated on achieving broadband and flat small signal gain across the
wanted frequency range (Figure 2). The power transfer characteristics of the amplifier were then simulated.
For example, at a constant CW input power of 38 dBm the output power is plotted as a function of frequency
in Figure 3 where it can be seen that the output power varies somewhat due to different levels of compression
and impedance match.

Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Cree, Inc.
the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective 4600 Silicon Drive
owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Cree Confidential and Supplied under Durham, NC 27703
terms of the Mutual NDA. USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
2 APPNOTE-006 Rev. C
 Simulated Performance Prior To Optimization

S21 S11 S22 Output Power v Frequency

20 45

p100
p92
p93
p94
p95
p96
p97
p98
p99
p82
p83
p84
p85
p86
p87
p88
p89
p90
p72
p73
p74
p75
p76
p77
p78
p79
p80
p62
p63
p64
p65
p66
p67
p68
p69
p70
p52
p53
p54
p55
p56
p57
p58
p59
p60
p91
p81
p71
p61
p51
10 p1
44

dBm
43
dB

p42
p43
p44
p45
p46
p47
p48
p49
p50
p32
p33
p34
p35
p36
p37
p38
p39
p40
p22
p23
p24
p25
p26
p27
p28
p29
p30
p12
p13
p14
p15
p16
p17
p18
p19
p20
p10
p41
p31
p21
p11
p2
p3
p4
p5
p6
p7
p8
p9
p1

-10
DB(|S(1,1)|) DB(PT(PORT_2))[X,49] (dBm)
2 to 6 GHz thermal example p142
p143
p144
p145
p146
p147
p148
p149
p150
p132
p133
p134
p135
p136
p137
p138
p139
p140
p122
p123
p124
p125
p126
p127
p128
p129
p130
p112
p113
p114
p115
p116
p117
p118
p119
p120
p102
p103
p104
p105
p106
p107
p108
p109
p110
p141
p131
p121
p111
p101 42 2 to 6 GHz thermal example
DB(|S(2,2)|)
-20 2 to 6 GHz thermal example
DB(|S(2,1)|)
2 to 6 GHz thermal example p 1 :
p 8 :
p 1 5 :
p 2 2 :
p 2 9 :
p 3 6 :
p 4 3 :
p 5 0 :
p 5 7 :
p 6 4 :
p 7 1 :
p 7 8 :
p 8 5 :
p 9 2 :
p 9 9 :
P wr
P wr

p 1 0 6 :
= p 2 -: 1 0P wdr B m=p 3 -: 9 P d
= p 9 -: 3 PdwBr m =p 1 -0 2:
P w r p =1 6 4
P w r p =2 3 1
P w r p =3 0 1
P w r p =3 7 2
P w r p =4 4 3
P w r p =5 1 3
: dPBw m
: 1 Pdw B
: 8 Pdw B
: 5 Pdw B
: 2 Pdw B
: 9 Pdw B
P w r p =5 8 -: 4 Pdw B
P w r p =6 5 3
P w r p =7 2 1
P w r p =7 9 1
P w r p =8 6 2
P w r p =9 3 3
P w r p =1 0 3
:
: 0 Pdw B
: 7 Pdw B
: 4 Pdw B
: 1 Pdw B
0 8: dP B
P w r p 1 =0 7 -: 5 P d
r p =1 7 5:
wB
d
PB
d
PB
r m =p 4 -: 8 P d
w mr p =
w mr p =
r mp =2 4 1: 2 P d
w Br mp =
r mp =3 1 1: 9 P d
w Br mp =
r mp =3 8 2: 6 P d
w Br mp =
r mp =4 5 3: 3 P d
r mp =5 2 -: 1 0
w Br mp =

r mp =5 9 -: 3 P d
dPBw m
r p =6 6 4: d
PB
w Br mp =
w mr p =
r mp =7 3 1: 1 P d
w Br mp =
r mp =8 0 1: 8 P d
w Br mp =
r mp =8 7 2: 5 P d

w mrp 1 =
w Br mp =
r mp =9 4 3: 2 P d
w Br mp =
1 8 6:
w Br m =p 5 -: 7 P dwBr m = p 6 -: 6 Pdw B
1 1 -: 1 P dwBr mp =1 2 0
d
P Bwmr p =1 9 7
2 5 1: 3 P dwBr mp =2 6 1
3 2 2: 0 P dwBr mp =3 3 2
3 9 2: 7 P dwBr mp =4 0 2
4 6 3: 4 P dwBr mp =4 7 3
P w dr Bp m=
:
:
dPBw m

: 4 Pdw B
: 1 Pdw B
: 8 Pdw B
: 5 Pdw B
5 3 -: 9 P dwBr mp =5 4 -: 8 Pdw B
6 0 -: 2 P dwBr mp =6 1 -: 1 Pdw B
6 7 5: d
P Bwmr p =6 8 6
7 4 1: 2 P dwBr mp =7 5 1
8 1 1: 9 P dwBr mp =8 2 2
8 8 2: 6 P dwBr mp =8 9 2
9 5 3: 3 P dwBr mp =9 6 3
0 1 3: 9 P dwBrp m1 =0 2 -: 1 0P w d
w Brpm1 =
0 8 -: 4 P dwBrp m1 =0 9 -: 3 Pdw B
:

: 0 Pdw B
: 7 Pdw B
: 4 Pdw B
rp B1m=0 3 -: 9 P d
rp m1 =1 0 -: 2 P d
r p =1 3 1: dP B
dPBw m
r p =2 0 8: dP B

r mp =6 2 0: dP B
dPBw m
: 3 Pdw B
r p =6 9 7: dP B
r m =p 7 -: 5 P d
w mr p =
w mr p =
r mp =2 7 1: 5 P d

w mr p =
w mr p =
r mp =7 6 1: 4 P d
r mp =8 3 2: 1 P d

wB
wB
r pm1 =
r pm1 =
1 4 2:
2 1 9:
w Br mp =
r mp =3 4 2: 2 P d
r mp =4 1 2: 9 P d

6 3 1:
7 0 8:
w Br mp =
w Br mp =
r mp =9 0 2: 8 P d
w Br m =
d
P Bwmr
d
P Bwmr
2 8 1: 6 P dwBr m =
w Br mp =
3 5 2: 3 P dwBr m =
w Br mp =
r mp =4 8 3: 6 P d
4 2 3: 0 P dwBr m =
w Br mp =
r mp =5 5 -: 7 P d
4 9 3: 7 P dwBr m =
w Br mp =
5 6 -: 6 P dwBr m =
d
P Bwmr
d
P Bwmr
7 7 1: 5 P dwBr m =
8 4 2: 2 P dwBr m =
w Br mp =
r mp =9 7 3: 5 P d
9 1 2: 9 P dwBr m =
w Br mp =
9 8 3: 6 P dwBr m =
=
=

=
=

0 4 -: 8 P dwBrpm1 =0 5 -: 7 PdwBr m =
1 1 -: 1 P dwBrpm1 =1 2 0: dPBwmr
- 4

=
3
1 0
1 7
2 4
3 1
3 8
- 5
2
9
1 6
2 3
3 0
3 7
d B m
d B m

- 6
1
d Bm
d Bm
d Bm
d Bm
d Bm
d Bm
d B m
d B m
d Bm
d Bm
d Bm
d Bm
d Bm
d Bm
p1: Pwr = 38 dBm
41
p 1 1 3 : P w r p 1 =1 4 2: dP B w mrp 1 =
1 5 3: d
P Bwmrp 1 =1 6 4 : dPBw m
rp 1 =1 7 5: dP B
wmrp 1 =1 8 6: d
P Bwmrp 1 =1 9 7: dPBwmr = 8 d Bm
p 1 2 0 : P w r p 1 =2 1 9: dP B w mrp 1 =
2 2 1: 0 P dwBrp m1 =2 3 1: 1 Pdw Brp m1 =2 4 1: 2 Pd wBr pm1 =
2 5 1: 3 P dwBrpm1 =2 6 1: 4 PdwBr m = 1 5 d Bm
p 1 2 7 : P w r p 1 =2 8 1: 6 P dw Brpm1 =
2 9 1: 7 P dwBrp m1 =3 0 1: 8 Pdw Brp m1 =3 1 1: 9 Pd wBr pm1 =
3 2 2: 0 P dwBrpm1 =3 3 2: 1 PdwBr m = 2 2 d Bm
p 1 3 4 : P w r p 1 =3 5 2: 3 P dw Brpm1 =
3 6 2: 4 P dwBrp m1 =3 7 2: 5 Pdw Brp m1 =3 8 2: 6 Pd wBr pm1 =
3 9 2: 7 P dwBrpm1 =4 0 2: 8 PdwBr m = 2 9 d Bm
p 1 4 1 : P w r p 1 =4 2 3: 0 P dw Brpm1 =
4 3 3: 1 P dwBrp m1 =4 4 3: 2 Pdw Brp m1 =4 5 3: 3 Pd wBr pm1 =
4 6 3: 4 P dwBrpm1 =4 7 3: 5 PdwBr m = 3 6 d Bm

-30
p 1 4 8 : P w r p 1 =4 9 3: 7 P dw Brpm1 =
5 0 3: 8 P dwBr m = 3 9 d Bm

2000 3000 4000 5000 6000 2000 3000 4000 5000 6000
Frequency (MHz) Frequency (MHz)

Figure 2 - S21, S11 and S22 Figure 3 - Output Power vs. frequency
prior to optimization at Pin=38 dBm prior to optimization

The self-heating feature of the large-signal Temperature Rise

200
model automatically calculates the thermal rise
in the transistor from package flange to channel. 150

This is shown in Figure 4 for the amplifier before 3235 MHz

167.3 V
Degrees C

any specific attention has been taken to decreasing 100

operating drain current. Optimization parameters p1

50
were set up in Microwave Office for output
|Vcomp(V_METER.VM1,0)|[X,49] (V) p1: Pwr = 38 dBm
power, gain and temperature rise as a function of 2 to 6 GHz thermal example

0
frequency. The intention of the optimization is to 2000 3000 4000 5000 6000
Frequency (MHz)
ensure that the transistor’s channel temperature
never exceeds 225°C at a case temperature of Figure 4 - Transistor temperature rise above
Tcase prior to optimization
85°C i.e. a temperature rise of 140°C.

Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Cree, Inc.
the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective 4600 Silicon Drive
owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Cree Confidential and Supplied under Durham, NC 27703
terms of the Mutual NDA. USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
3 APPNOTE-006 Rev. C
 Simulated Performance After To Optimization

Following thermal optimization the small signal parameters are re-simulated as shown in Figure 5
where there is little change in gain and some improvement in output return loss. Figure 6 shows the CW
output power as a function of frequency – again there is general improvement in output power over the band
even though the “profile” has changed.

S21 S11 S22 Output Power v Frequency

12 p100
p92
p93
p94
p95
p96
p97
p98
p99
p82
p83
p84
p85
p86
p87
p88
p89
p90
p72
p73
p74
p75
p76
p77
p78
p79
p80
p62
p63
p64
p65
p66
p67
p68
p69
p70
p52
p53
p54
p55
p56
p57
p58
p59
p60
p91
p81
p71
p61
p51 45
10
44.5 p1
5

44
0

dBm
dB

43.5
-5 p110
p142
p143
p144
p145
p146
p147
p148
p149
p150
p132
p133
p134
p135
p136
p137
p138
p139
p140
p122
p123
p124
p125
p126
p127
p128
p129
p130
p112
p113
p114
p115
p116
p117
p118
p119
p120
p102
p103
p104
p105
p106
p107
p108
p109
p141
p131
p121
p111
p101
p42
p43
p44
p45
p46
p47
p48
p49
p50
p32
p33
p34
p35
p36
p37
p38
p39
p40
p22
p23
p24
p25
p26
p27
p28
p29
p30
p12
p13
p14
p15
p16
p17
p18
p19
p20
p10
p41
p31
p21
p11
p2
p3
p4
p5
p6
p7
p8
p9
p1

-10 43
DB(|S(1,1)|)
2 to 6 GHz thermal example

-15
DB(|S(2,2)|) 42.5
2 to 6 GHz thermal example DB(PT(PORT_2))[X,49] (dBm)
p1: Pwr = 38 dBm
p 1: P wr = - 1 0p 2d: B m
P wr = - 9 pd3 :B m P w r = - 8 p4
d :B m P w r = - 7 p5
d B: m P w r = - 6 p d6B: m P w r = - 5 pd7B: mP w r = - 4 d Bm
p 8: P wr = - 3 pd9B: m P w r = - 2 pd1 0
Bm: Pw r = - 1p 1 1
d B: m P w r = 0 p1
d B2m
: P wr = 1 p d1B3m
: P wr = 2 pd1B4 :m P wr = 3 d Bm

2 to 6 GHz thermal example

p 15: P wr = 4 pd1B6 :m P wr = 5 pd1 7
Bm: Pw r = 6 p1
d8Bm
: Pw r = 7 p1
d B9m
: P wr = 8 p d2B0m
: P wr = 9 pd2B1 :m P wr = 10 d Bm

DB(|S(2,1)|)
p 22: P wr = 1 1p 2d3 :B m P w r = 1 2p 2 4
d B: m P w r = 1 3p 2 5
d B: m P w r = 1 4p 2 d6B: m P w r = 1 5
p 2d7B: m P w r = 1 6p 2d8 :B m P w r = 17 d Bm
p 29: P wr = 1 8p 3d0 :B m P w r = 1 9p 3 1
d B: m P w r = 2 0p 3 2
d B: m P w r = 2 1p 3 d3B: m P w r = 2 2
p 3d4B: m P w r = 2 3p 3d5 :B m P w r = 24 d Bm
p 36: P wr = 2 5p 3d7 :B m P w r = 2 6p 3 8
d B: m P w r = 2 7p 3 9
d B: m P w r = 2 8p 4 d0B: m P w r = 2 9
p 4d1B: m P w r = 3 0p 4d2 :B m P w r = 31 d Bm
p 43: P wr = 3 2p 4d4 :B m P w r = 3 3p 4 5
d B: m P w r = 3 4p 4 6
d B: m P w r = 3 5p 4 d7B: m P w r = 3 6
p 4d8B: m P w r = 3 7p 4d9 :B m P w r = 38 d Bm
p 50: P wr = 3 9p 5d1 :B m P w r = - 1p05 2 d: B m
Pw r = - 9p 5 3
d B: m P w r = - 8p 5 d4B: m P w r = - 7
p 5d5B: m P w r = - 6p 5d6 :B m P w r = - 5 d Bm
p 57: P wr = - 4p 5d8 :B m P w r = - 3p 5 9
d B: m P w r = - 2p 6 0
d B: m P w r = - 1p 6 d1B: m P w r = 0 p d6B2m
: P wr = 1 pd6B3 :m P wr = 2 d Bm
p 64: P wr = 3 pd6B5 :m P wr = 4 pd6 6
Bm: Pw r = 5 p6
d7Bm
: Pw r = 6 p6
d B8m
: P wr = 7 p d6B9m
: P wr = 8 pd7B0 :m P wr = 9 d Bm

2 to 6 GHz thermal example

p 71: P wr = 1 0p 7d2 :B m P w r = 1 1p 7 3
d B: m P w r = 1 2p 7 4
d B: m P w r = 1 3p 7 d5B: m P w r = 1 4
p 7d6B: m P w r = 1 5p 7d7 :B m P w r = 16 d Bm
p 78: P wr = 1 7p 7d9 :B m P w r = 1 8p 8 0
d B: m P w r = 1 9p 8 1
d B: m P w r = 2 0p 8 d2B: m P w r = 2 1
p 8d3B: m P w r = 2 2p 8d4 :B m P w r = 23 d Bm
p 85: P wr = 2 4p 8d6 :B m P w r = 2 5p 8 7
d B: m P w r = 2 6p 8 8
d B: m P w r = 2 7p 8 d9B: m P w r = 2 8
p 9d0B: m P w r = 2 9p 9d1 :B m P w r = 30 d Bm
p 92: P wr = 3 1p 9d3 :B m P w r = 3 2p 9 4
d B: m P w r = 3 3p 9 5
d B: m P w r = 3 4p 9 d6B: m P w r = 3 5
p 9d7B: m P w r = 3 6p 9d8 :B m P w r = 37 d Bm
p 99: P wr = 3 8p 1d0 0
Bm: Pw r = 3p91 0 d1B: m P w r = -p 1 0 2d: B m
P wr = -p 9
1 0d3B: m P w r = -p 81 0d4 B
: m P wr = -p71 0 d
5B: m P wr = - 6 d Bm
p 106: P wr = -p51 0 d
7 B: m P w r = -p41 0 d8B: m P w r = -p 3
1 0 d9B: mP w r = -p 2
1 1d0B: m P w r = -p 11 1d1 B
: m P wr = 0p 1d1 2
B :m P wr = 1 d Bm
p 113: P wr = 2p 1d1 4
Bm: Pw r = 3p 1 1
d B5m
: P wr = 4p 1 1
d B6m
: P wr = 5p 1 d1B7m
: P wr = 6
p 1d1B8 :m P wr = 7p 1d1 9
B :m P wr = 8 d Bm
p 120: P wr = 9p 1d2 1
Bm: Pw r = 1p01 2 d2B: m P w r = 1p 1 2 d3B: mP w r = 1p 2
1 2d4B: m P w r = 1
p 31 2d5 B
: m P wr = 1p41 2 d
6B: m P wr = 15 d Bm
p 127: P wr = 1p61 2 d
8 B: m P w r = 1p71 2 d9B: m P w r = 1p 8
1 3 d0B: mP w r = 1p 9
1 3d1B: m P w r = 2
p 01 3d2 B
: m P wr = 2p11 3 d
3B: m P wr = 22 d Bm
p 134: P wr = 2p31 3 d
5 B: m P w r = 2p41 3 d6B: m P w r = 2p 5
1 3 d7B: mP w r = 2p 6
1 3d8B: m P w r = 2
p 71 3d9 B
: m P wr = 2p81 4 d
0B: m P wr = 29 d Bm
p 141: P wr = 3p01 4 d
2 B: m P w r = 3p11 4 d3B: m P w r = 3p 2
1 4 d4B: mP w r = 3p 3
1 4d5B: m P w r = 3
p 41 4d6 B
: m P wr = 3p51 4 d
7B: m P wr = 36 d Bm

42
p 148: P wr = 3p71 4 d
9 B: m P w r = 3p81 5 d0B: m P w r = 3 9 dB m

-20
2000 3000 4000 5000 6000 2000 3000 4000 5000 6000
Frequency (MHz) Frequency (MHz)

Figure 5 - S21, S11 and S22 after optimization Figure 6 - Output Power vs. frequency at
Pin=38 dBm after optimization

Figure 7 is a plot of transistor drain current as a function of frequency which indicates drain current
reduction of as much as 12% compared to the original design. Figure 8 indicates the temperature rise after
thermal optimization showing temperature decreases of as much as 35°C compared to the original design.

Drain Current versus Frequency Temperature Rise

p1
1800 150

1600
p1

1400 100 3250 MHz

132.5 V
Degrees C
Milliamps

1200

|Icomp(I_METER.AMP2,0)|[X,49] (mA)
1000 2 to 6 GHz thermal example 50

800
p1: Pwr = 38 dBm |Vcomp(V_METER.VM1,0)|[X,49] (V) p1: Pwr = 38 dBm
2 to 6 GHz thermal example
600 0
2000 3000 4000 5000 6000 2000 3000 4000 5000 6000
Frequency (MHz) Frequency (MHz)

Figure 7 - Drain current vs. frequency at Figure 8 - Transistor temperature rise

Pin of 38 dBm after optimization above Tcase after optimization

Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Cree, Inc.
the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective 4600 Silicon Drive
owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Cree Confidential and Supplied under Durham, NC 27703
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4 APPNOTE-006 Rev. C
Conclusion

This paper has shown a demonstration of how to use the self-heating feature of Cree’s large-signal GaN
HEMT models to calculate transistor temperature rise as a function of other parameters such as frequency
and RF power level. Specifically the self-heating engine has been used, via optimization, to lower transistor
temperature by minimizing Trise while maintaining output power.

Reference

Cree, Inc. proprietary large-signal model CGH40025F_r6 for Applied Wave Research’s Microwave
Office generated the results in this application note.

Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Cree, Inc.
the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective 4600 Silicon Drive
owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Cree Confidential and Supplied under Durham, NC 27703
terms of the Mutual NDA. USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
5 APPNOTE-006 Rev. C