1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode

Electrical Characteristics* TA=25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Max. Units

VR Breakdown Voltage IR = 100µA 100 V
IR = 5.0µA 75 V
VF Forward Voltage 1N914B/4448 IF = 5.0mA 620 720 mV
1N916B IF = 5.0mA 630 730 mV
1N914/916/4148 IF = 10mA 1.0 V
1N914A/916A IF = 20mA 1.0 V
1N916B IF = 20mA 1.0 V
1N914B/4448 IF = 100mA 1.0 V
IR Reverse Leakage VR = 20V 25 nA
VR = 20V, TA = 150°C 50 µA
VR = 75V 5.0 µA
CT Total Capacitance
1N916A/B/4448 VR = 0, f = 1.0MHz 2.0 pF
1N914A/B/4148 VR = 0, f = 1.0MHz 4.0 pF
trr Reverse Recovery Time IF = 10mA, VR = 6.0V (600mA) 4.0 ns
Irr = 1.0mA, RL = 100Ω
* Non-recurrent square wave PW = 8.3ms

Typical Characteristics

160 120
o o
Ta=25 C Ta= 25 C
100
[nA]

150
[V] R

80
Reverse Voltage, V

140
Reverse Current, I

60
130

40

120
20

110
1 2 3 5 10 20 30 50 100 0
10 20 30 50 70 100
Reverse Current, IR [uA] Reverse Voltage, VR [V]

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current Figure 2. Reverse Current vs Reverse Voltage
BV - 1.0 to 100µA IR - 10 to 100V

550 750
o
o
Ta= 25 C Ta= 25 C

500 700
[mV]
[mV]

650
R

450
Forward Voltage, V
Forward Voltage, V

400 600

350 550

300 500

250 450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
Forward Current, IF [uA] Forward Current, IF [mA]

Figure 3. Forward Voltage vs Forward Current Figure 4. Forward Voltage vs Forward Current
VF - 1 to 100µA VF - 0.1 to 10mA

2 www.fairchildsemi.com
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2