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  • Mosfet-2: DC Analysis of FET

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    Komay Abo Shakra
    6 views12 pages
    The document discusses field-effect transistors (FETs) and provides examples of calculating drain current, effective resistance, and determining resistor values for NMOS and PMOS circuits. Specifically, it defines FETs as voltage-controlled devices where the gate-source voltage determines drain current. It then gives examples of designing circuits to establish a specific drain voltage and current, including calculating the effective resistance between drain and source for a given operating point and determining resistor values needed for a transistor to operate at a target drain current and voltage.

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    MOSFET2

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    The document discusses field-effect transistors (FETs) and provides examples of calculating drain current, effective resistance, and determining resistor values for NMOS and PMOS circuits. Specifically, it defines FETs as voltage-controlled devices where the gate-source voltage determines drain current. It then gives examples of designing circuits to establish a specific drain voltage and current, including calculating the effective resistance between drain and source for a given operating point and determining resistor values needed for a transistor to operate at a target drain current and voltage.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    6 views12 pages

    Mosfet-2: DC Analysis of FET

    Uploaded by

    Komay Abo Shakra
    The document discusses field-effect transistors (FETs) and provides examples of calculating drain current, effective resistance, and determining resistor values for NMOS and PMOS circuits. Specifically, it defines FETs as voltage-controlled devices where the gate-source voltage determines drain current. It then gives examples of designing circuits to establish a specific drain voltage and current, including calculating the effective resistance between drain and source for a given operating point and determining resistor values needed for a transistor to operate at a target drain current and voltage.

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    © All Rights Reserved
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    MOSFET-2

    DC analysis of FET
    LIST OF FORMULAS: NMOS
    Circuit Symbols and Conventions –
    NMOS

    FET is a voltage controlled device


    meaning the voltage VGS determines
    the current flowing, ID
    Circuit Symbols and Conventions –
    PMOS Enhancement mode
    Example-1
    • Problem Statement:
    Design the circuit in Figure
    to establish a drain voltage
    of 0.1V. What is the
    effective resistance
    between drain and source
    at this operating point?
    Let Vtn = 1V and k’n(W/L) =
    1mA/V2.
    Example-2
    • Problem Statement:
    Design the circuit in the
    Figure, that is, determine
    the values of RD and RS –
    so that the transistor
    operates at ID = 0.4mA
    and VD = +0.5V. The
    NMOS transistor has Vt =
    0.7V, mnCox = 100mA/V2, L
    = 1mm, and W = 32mm.
    Example-3
    Example-4
    Example-5

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