Data Sheet No.

PD60028-M

IR2111(S) & (PbF)

HALF-BRIDGE DRIVER
Features Product Summary
• Floating channel designed for bootstrap operation
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage
dV/dt immune IO+/- 200 mA / 420 mA
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels VOUT 10 - 20V
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels ton/off (typ.) 750 & 150 ns
• Internally set deadtime
• High side output in phase with input Deadtime (typ.) 650 ns
• Also available LEAD-FREE

Description Packages
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided 8-Lead PDIP 8-Lead SOIC
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection
up to 600V

VCC

VCC VB
IN IN HO
COM VS TO
LOAD

LO

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

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IR2111(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in figures 7 through 10.

Symbol Definition Min. Max. Units

VB High side floating supply voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25 V

VLO Low side output voltage -0.3 VCC + 0.3

VIN Logic input voltage -0.3 VCC + 0.3
dVs/dt Allowable offset supply voltage transient (figure 2) — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8 Lead PDIP) — 1.0
W
(8 lead SOIC) — 0.625
RthJA Thermal resistance, junction to ambient (8 lead PDIP) — 125
°C/W
(8 lead SOIC) — 200
TJ Junction temperature — 150
TS Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

VB High side floating supply absolute voltage VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 600
VHO High side floating output voltage VS VB
V
VCC Low side and logic fixed supply voltage 10 20
VLO Low side output voltage 0 VCC
VIN Logic input voltage 0 VCC
TA Ambient temperature -40 125 °C

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).

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 IR2111(S) & (PbF)

Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in figure 3.

Symbol Definition Min. Typ. Max. Units Test Conditions

ton Turn-on propagation delay 550 750 950 VS = 0V
toff Turn-off propagation delay — 150 180 VS = 600V
tr Turn-on rise time — 80 130
ns
tf Turn-off fall time — 40 65
DT Deadtime, LS turn-off to HS turn-on & 480 650 820
HS turn-off to LS turn-on
MT Delay matching, HS & LS turn-on/off — 30 —

Static Electrical Characteristics

VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

VIH Logic “1” input voltage for HO & logic “0” for LO 6.4 — — VCC = 10V
9.5 — — VCC = 15V
12.6 — — VCC = 20V
VIL Logic “0” input voltage for HO & logic “1” for LO — — 3.8 V VCC = 10V
— — 6.0 VCC = 15V
— — 8.3 VCC = 20V
VOH High level output voltage, VBIAS - VO — — 100 IO = 0A
mV
VOL Low level output voltage, VO — — 100 IO = 0A
ILK Offset supply leakage current — — 50 VB = VS = 600V
IQBS Quiescent VBS supply current — 50 100 VIN = 0V or VCC
IQCC Quiescent VCC supply current — 70 180 µA VIN = 0V or VCC
IIN+ Logic “1” input bias current — 30 50 VIN = VCC
IIN- Logic “0” input bias current — — 1.0 VIN = 0V
VBSUV+ VBS supply undervoltage positive going threshold 7.6 8.6 9.6
VBSUV- VBS supply undervoltage negative going threshold 7.2 8.2 9.2
V
VCCUV+ VCC supply undervoltage positive going threshold 7.6 8.6 9.6
VCCUV- VCC supply undervoltage negative going threshold 7.2 8.2 9.2
IO+ Output high short circuit pulsed current 200 250 — VO = 0V, VIN = VCC
PW ≤ 10 µs
mA
IO- Output low short circuit pulsed current 420 500 — VO = 15V, VIN = 0V
PW ≤ 10 µs

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IR2111(S) & (PbF)
Functional Block Diagram

VB
UV R
DETECT
Q
HV
LEVEL PULSE R HO
DEAD SHIFT
TIME FILTER S

PULSE VS
GEN
UV
IN DETECT VCC

LO
DEAD
TIME

COM

Lead Definitions
Symbol Description
IN Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
VCC Low side and logic fixed supply
LO Low side gate drive output
COM Low side return

Lead Assignments

8 Lead DIP 8 Lead SOIC

IR2111 IR2111S
Part Number

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 IR2111(S) & (PbF)

IN

HO

LO

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit

IN(LO)
50% 50%
IN(HO)
ton tr toff tf

90% 90%

LO
HO 10% 10%

Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition

IN (LO)
50% 50%
50% 50%
IN
IN (HO)

90% LO HO

10%
HO 10%
DT MT MT

LO 90% 90%

10% LO HO

Figure 5. Deadtime Waveform Definitions Figure 6. Delay Matching Waveform Definitions

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IR2111(S) & (PbF)

1500 1500

Turn-On Delay Time (ns)

Turn-On Delay Time (ns)

1250 1250
M ax.
Max.
1000 T yp. 1000
Typ.
750 M in. 750
Min.
500 500

250 250

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
o
Temperature ( C) V BIA S Supply V oltage (V)
Figure 11A Turn-On Time vs Temperature Figure 11B Turn-On Time vs Voltage

400 400
350 350
Turn-Off Delay Time (ns)

Turn-Off Delay Time (ns)

300 300
Max
250 250
Max
200 200
Typ
150 150
Typ
100 100
50 50
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C)
VBIAS Supply Voltage (V)

Figure 12A Turn-Off Time vs Temperature Figure 12B Turn-Off Time vs Voltage

400 400

350 350
Turn-On rise Time (ns)

Turn-On Rise Time (ns)

300 300
250 250
200 200
Max Max
150 150
100 100
Typ Typ
50 50
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (°C) V B IA S Supply V oltage (V )

Figure 13A Turn-On RiseTime vs Temperature Figure 13B Turn-On RiseTime vs Voltage

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200 200
Turn -Off Fall Time (ns)

150 150

Turn-Off Fall Time (ns)

100 100
Max Max

50 50
Typ Typ

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VBIAS Supply Voltage (V)

Figure 14A Turn-Off Fall Time vs Temperature Figure 14B Turn-Off Fall Time vs Voltage
1250 1250

1000 M ax. 1000

Max.
Deadtime (ns)
Deadtime (ns)

Typ. 750 Typ.

750
M in. Min.
500 500

250 250

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (oC) VBIAS Supply Voltage (V)

Figure 15A Dead Time vs Temperature Figure 15B Dead Time vs Voltage
15

15
Logic "1" Input Threshold (V)

Logic " 1 " Input Treshold (V)

12
12

Min
Min
9
9

6
6

3
3

0
0

-50 -25 0 25 50 75 100 125

10 12 14 16 18 20
Temperature (°C)
Figure 16A Logic “I” Input voltage for HO & Figure 16B Logic “I” Input voltage for HO &
Logic “0” for LO vs Temperature Logic “0” for LO vs Voltage

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IR2111(S) & (PbF)

15
15

Logic " 0 " Input Treshold (V)

Logic "0" Input Threshold (V)

12
12

9
Max Max
6

6
3
3

0
0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VCC Logic Supply Voltage (V)

Figure 17A Logic “0” Input voltage for HO & Figure 17B Logic “0” Input voltage for HO &
Logic “I” for LO vs Temperature Logic “I” for LO vs Voltage
1 H igh Level O utput V oltage (V )
1

0.8
H igh Level O utput V oltage (V )

0.8

0.6 0.6

0.4 0.4
M ax.
M ax.
0.2 0.2

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
T e m p e ra tu re V B A IS S upply V otage (V )

Figure 18A. High Level Output vs. Temperature Figure 18B. High Level Output vs. Voltage

1 1
Low Level Output Voltage (V)

Low Level Output Voltage (V)

0.8 0.8

0.6 0.6

0.4 0.4
Max. Max.
0.2 0.2

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (°C) VBIAS Supply Votage (V)

Figure 19A. Low Level Output vs. Temperature Figure 19B. Low Level Output vs. Voltage

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 IR2111(S) & (PbF)
Offset Supply Leakage Current (uA)

500 500

Offset Supply Leakage Current (uA)

400 400

300 300

200 200
Max.
M ax .
100 100
0
0
-50 -25 0 25 50 75 100 125
0 100 200 300 400 500 600

Temperature (°C) V B B oos t V oltage (v)

Figure 20A Offset Supply Current vs
Temperature Figure 20B Offset Supply Current vs Voltage

200 200
VBS Supply Current (uA)

VBS Supply Current (uA)

150 150
Max. Max.
100 100
Typ. Typ.
50 50

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C) VBS Floating Supply Voltage (V)

Figure 21A VBS Supply Current vs Temperature Figure 21B VBS Supply Current vs Voltage

500 500
Vcc Supply Current (uA)

400 400
V cc S upply C urrent (uA )

300 300
Max.
Max
200 200

Typ.
100 100
Typ
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (°C)
V cc F ixed S upply V oltage (V )
Figure 22A VCC Supply Current vs Temperature Figure 22B VCC Supply Current vs Voltage

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IR2111(S) & (PbF)

120 120
Logic "1 " Input Bias Current (uA)

100

Logic " 1" Input Bias Current (uA)

100

80 80
Max.
60 60

40 40

20
20 Typ.
0
0
10 12 14 16 18 20
-50 -25 0 25 50 75 100 125
Temperature (°C) VCC Supply Voltage (V)

Figure 23A Logic “1” Input Current vs Temperature Figure 23B Logic “1” Input Current vs VCC Voltage

5
Logic "0" Input Current (uA) 5
Logic "0" Input Bias Current (uA)

4 4

3
3
2
2
Max.
Max. 1
1
0
0 10 12 14 16 18 20
-50 -25 0 25 50 75 100 125
VCC Supply Voltage (V)
Temperature (°C)

Figure 24A. Logic “0” Input Current vs. Temperature Figure 24B. Logic “0” Input Current vs. VCC Voltage

12 12
VBS UVLO Threshold +(V)

V B S U V LO Threshold -(V )

11 11
Max.
10 10 M ax.

9 Typ. 9
Typ.
8 8

7 Min. 7 M in.

6 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature (°C) Tem perature (°C )

Figure 25 VBS Undervoltage Threshold (+) Figure 26 VBS Undervoltage Threshold (-)
vsTemperature vsTemperature

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 IR2111(S) & (PbF)
11 11

VCC Undervoltage Lockout - (V)

Vcc Undervoltage Lockout +(V)

10 10
Max.
Max.
9 9
Typ.
Typ.
8 8
Min.
Min.
7 7

6 6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125

Temperature (°C) Temperature (°C)

Figure 27 VCC Undervoltage (-) vs Temperature Figure 28 VCC Undervoltage (-) vs Temperature
500 500
Output source Current (mA)
Output source Current (mA)

400 400
Typ.
300 300
Typ.
200 Min.
200
Min.
100
100

0
0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (°C)
VBIAS Supply Voltage (V)

Figure 29A Output Source Current vs Temperature Figure 29B Output Source Current vs Voltage

750 750
Output Sink Current (mA)
Output Sink Current (mA)

600 600
Typ. Typ.
450 450

300
300 Min.
Min.
150
150

0
0
10 12 14 16 18 20
-50 -25 0 25 50 75 100 125
VBIAS Supply Voltage (V)
Temperature (°C)

Figure 30A Output Sink Current vs Temperature Figure 30B Output Sink Current vs Voltage

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IR2111(S) & (PbF)

320V
150 150
320 160V
125 125
Ju n ctio n T e m p e ratu re (°C )

Ju n ctio n T e m p e ratu re (°C )

100 100
160 30V
75 30V 75

50 50

25 25

0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6

Frequency (Hz) Frequency (Hz)

Figure 31. IR2111 TJ vs. Frequency (IRFBC20) Figure 32. IR2111 TJ vs. Frequency (IRFBC30)
Ω, VCC = 15V
RGATE = 33Ω Ω, VCC = 15V
RGATE = 22Ω

320V 160V 320V 160V 30V

150 150

125 30V 125

Ju n ctio n T e m p e ratu re (°C )
Ju n ctio n T e m p e ratu re (°C )

100 100

75 75

50 50

25 25

0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6

Frequency (Hz) Frequency (Hz)

Figure33. IR2111 TJ vs. Frequency (IRFBC40) Figure 34. IR2111 TJ vs. Frequency (IRFPC50)
Ω, VCC = 15V
RGATE = 15Ω Ω, VCC = 15V
RGATE = 10Ω

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 IR2111(S) & (PbF)
320V 320V 140V
150 150
160
30V
125 125
Ju n ctio n T e m p e ratu re (°C )

Ju n ctio n T e m p e ratu re (°C )

100 100

75 75
30V
50 50

25 25

0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6

Frequency (Hz) Frequency (Hz)

Figure 35. IR2111S TJ vs. Frequency (IRFBC20) Figure 36. IR2111S TJ vs. Frequency (IRFBC30)
Ω, VCC = 15V
RGATE = 33Ω Ω, VCC = 15V
RGATE = 22Ω

320V 140V 320V 140V 30V

150 30V 150

125 125
Ju n ctio n T e m p e ratu re (°C )
Ju n ctio n T e m p e ratu re (°C )

100 100

75 75

50 50

25 25

0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6

Frequency (Hz) Frequency (Hz)

Figure 37. IR2111S TJ vs. Frequency (IRFBC40) Figure 38. IR2111S TJ vs. Frequency (IRFPC50)
Ω, VCC = 15V
RGATE = 15Ω Ω, VCC = 15V
RGATE = 10Ω

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IR2111(S) & (PbF)

Case outlines

01-6014
8-Lead PDIP 01-3003 01 (MS-001AB)

INCHES MILLIMETERS
D B DIM
MIN MAX MIN MAX
A 5 FOOTPRINT A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8X 0.72 [.028]
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E E .1497 .1574 3.80 4.00
0.25 [.010] A
1 2 3 4 6.46 [.255] e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
L .016 .050 0.40 1.27
6X e 3X 1.27 [.050] 8X 1.78 [.070] y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
A1 8X L 8X c
8X b
7
0.25 [.010] C A B

NOTES: 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
8-Lead SOIC
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)

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 IR2111(S) & (PbF)

LEADFREE PART MARKING INFORMATION

Part number IRxxxxxx

Date code YWW? IR logo

Pin 1 ?XXXX
Identifier
Lot Code
? MARKING CODE (Prod mode - 4 digit SPN code)
P Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free) Leadfree Part

8-Lead PDIP IR2111 order IR2111 8-Lead PDIP IR2111 order IR2111PbF
8-Lead SOIC IR2111S order IR2111S 8-Lead SOIC IR2111S order IR2111SPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice. 4/12/2004

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