PD-91490C

IRFP3710
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = 100V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.025W
l Fully Avalanche Rated G

ID = 57A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package TO-247AC
because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V … 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V … 40 A
IDM Pulsed Drain Current … 180
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 530 mJ
IAR Avalanche Current… 28 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RqJC Junction-to-Case ––– 0.75
RqCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RqJA Junction-to-Ambient ––– 40

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 W VGS = 10V, ID = 28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 28A…
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 190 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 82 VGS = 1.7V, See Fig. 6 and 13 „…
td(on) Turn-On Delay Time ––– 14 ––– VDD = 50V
tr Rise Time ––– 59 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 58 ––– RG = 2.5W
tf Fall Time ––– 48 ––– RD = 1.7W, See Fig. 10 „…
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 3000 ––– VGS = 0V

Coss Output Capacitance ––– 640 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 57
(Body Diode)… showing the
ISM Pulsed Source Current A integral reverse G

––– ––– 180

(Body Diode) … p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
trr Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A
Qrr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs „…
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width £ 300µs; duty cycle £ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.4mH … Uses IRF3710 data and test conditions
RG = 25W , IAS = 28A. (See Figure 12)
ƒ ISD £ 28A, di/dt £ 460A/µs, VDD £ V(BR)DSS,
TJ £ 175°C

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 IRFP3710

1000 VGS
1000 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-S ource C urrent (A )

I , D rain-to-S ource C urrent (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V
10 4.5V 10
D

D
20µ s P U LS E W ID TH 20µ s P U LS E W ID TH
TC = 25°C T C = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 46A
R D S (on) , D rain-to-S ource O n R esistance
I D , D ra in -to-S o urc e C urren t (A )

2.5

T J = 2 5 °C
100 2.0
T J = 1 7 5 °C
(N orm alized)

1.5

10 1.0

0.5

VDS = 50V
2 0 µ s P U L S E W ID T H V G S = 10V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

V G S , G a te -to -S o u rce V o lta g e (V ) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP3710

6000 20
V GS = 0V , f = 1M H z I D = 28 A
C iss = C gs + C gd , C ds S H O R TE D V D S = 80V

V G S , G ate-to-S ource V oltage (V )

C rss = C gd V D S = 50V
5000
C oss = C ds + C gd 16 V D S = 20V
C is s
C , C apacitanc e (pF )

4000
12

3000

C os s 8
2000

C rs s 4
1000

FO R TE S T C IR C U IT
S E E FIG U R E 13
0 A 0 A
1 10 100 0 40 80 120 160 200
V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I S D , R everse D rain C urrent (A )

I D , D rain C urrent (A )

10µ s
100 100

T J = 17 5°C 100µ s

T J = 25°C
10 10 1m s

10m s
T C = 25°C
T J = 175°C
V G S = 0V S ingle P ulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100 1000
V S D , S ource-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP3710

60
RD
VDS

50 VGS
D.U.T.
RG
I D , Drain Current (A)

+
40 -VDD

10V
30
Pulse Width £1 µs
Duty Factor £ 0.1 %

20
Fig 10a. Switching Time Test Circuit
10 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP3710

1200
ID

E A S , S ingle P ulse A valanc he E nergy (m J)

TO P 11A
20A
15V 1000 B O TTO M 28 A

800
L D R IVE R
VDS

600
RG D .U .T +
V
- DD
IA S A
20V 400
tp 0 .01 Ω

Fig 12a. Unclamped Inductive Test Circuit 200

V D D = 25V
0 A
25 50 75 100 125 150 175
V (B R )D S S S tarting T J , Junction T em perature (°C )
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms Current Regulator

Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP3710

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
· Low Stray Inductance
· Ground Plane
ƒ
· Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG · dv/dt controlled by RG +
· Driver same type as D.U.T. VDD
-
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP3710

Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.143) -D -
15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
1 2 3 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
-C - T O -247-A C .
14.80 (.583)
4.30 (.170)
14.20 (.559)
3.70 (.145)

2.40 (.094) LE A D A S S IG N M E N TS
1.40 (.056) 0.80 (.031)
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 1 - G A TE
2X 2 - D R A IN
0.25 (.010) M C A S 2.60 (.102) 3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - D R A IN
3.40 (.133)
2X 3.00 (.118)

Part Marking Information

TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 A
W ITH A S S E M B L Y PART NUMBER
LOT CODE 3A1Q IN TE R N A TIO N A L
R E C T IF IE R IR F P E 3 0
LOGO
3A 1 Q 9 3 0 2
ASSEMBLY D A TE C O D E
LOT CODE (Y YW W )
YY = YEAR
W W W EEK

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http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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Note: For the most current drawings please refer to the IR website at:
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