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Electrostatic nanostructure (metal nanotube) and reaction with hydrogen and

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Article · January 2021

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4 authors:

Mohsen Miandehy ‫دﮐﺘﺮ اﻓﺸﯿﻦ رﺷﯿﺪ‬

National Iranian Gas Company (NIGC) Islamic Azad University Tehran Science and Research Branch
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S J Malik Srinivas Kasulla

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Electrostatic nanostructure (metal nanotube) and reaction with

hydrogen and fluorine gas

Note: In the electrical structure of hybridization (metal nanotubes),

the reaction with hydrogen gas and fluorine, by entering SP3,

converts the electrical structure of hybridization of metal

nanotubes into semiconductors.

These reactions sometimes damage the nanotube walls and lead

to the formation of amorphous carbon or graphite layer structures.

By hydrogenating single-walled nanotubes, the semiconductor

nature of SWCNTs increases at room temperature. Strong plasma

or high temperature reaction engraves the wall of metal

nanotubes. That semiconductor SWCNTs are not damaged.

Therefore, controlling the reaction conditions is very important. In

nanotubes, reaction with methane plasma removes metal

SWCNTs without degrading semiconductor SWCNTs. In the

method of using soft nanomolecular hydrogen plasma in which

hydrogen plasma is used to convert metal SWCNTs to

semiconductor SWCNTs, in which case the nanotube walls are

not destroyed or engraved. These reactions, which take place in

the gas phase, result in the fabrication of large-scale TFTS and

FETS with semiconductor nanotubes, which is critical to the

commercialization of high-efficiency nanotube-based equipment

. By selecting the appropriate reactant gases, this method can

also be used for selective reaction with semiconductor

nanotubes. By reacting SWCNTs SO3 as under neutral gas in the

presence of gas; Reagent gas inside the furnace at 400 ° C,

semiconductor nanotubes preferably react with gas . The

nanotubes are then heated to a temperature of 900 ° C to recover

metal defects with structural defects. This process is a simple

way to enrich the nanotube sample from Nanotubes are metal.

Mass production of metal nanotubes can be done by more

precise control of reaction conditions and ultimately increase the

production scale of its uses, including conductive films and

transparent electrodes.

In general, based on the reaction rate, the electrochemical

covalent selectivity of metal nanotubes can be divided into two

categories:

1. First, the nanotube metal to a semiconductor, turn that off of

the type of metal used and end the nanotube metal is the first

reaction along with the establishment of the electron and the

loss of symmetry and a dash of energy at the Fermi level

nanotube metal Creates.

2. The second reaction conjugate all systems into a series of

smaller aromatic compounds through the open CC bonds in the

structure of nanotubes makes. The end result of both modes is

the acquisition of semiconductor nanotubes suitable for the

manufacture of nanoelectronic equipment .

In selective covalent reactions, the concentration of the

reactant is always important. And when the concentration of the

reactant is high , both types of nanotubes are affected by the

reaction . For example, in the case of FETS, increasing the

reactant concentration reduces the Off current , resulting in an

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off / On ratio of more than 105. On the other hand, the strong

reaction reduces mobility, which is another important parameter

for electronic equipment. Therefore, there must be a balance

between the rate of reaction progress and the final efficiency of

the equipment.

Conclusion :

There are several drawbacks to covalent methods . First of all,

most nanotubes become functional and as a result the

electronic structure of SWCNTs is defective. Second, due to the

strong reaction, it is difficult to purify the product from

amorphous carbon. Most importantly, there is no covalent

reaction after which the nanotube (m, n) can be purified

uniformly