3 nV/√Hz, Low Power

Instrumentation Amplifier
Enhanced Product AD8421-EP
FEATURES PIN CONNECTION DIAGRAM
Specified from −55°C to 125°C AD8421-EP
–IN 1 8 +VS
0.9 μV/°C maximum input offset voltage drift
RG 2 7 VOUT
5 ppm/°C maximum gain drift (G = 1)
RG 3 6 REF
Low power
+IN 4 5 –VS
2.3 mA maximum supply current

11139-001
Low noise TOP VIEW
(Not to Scale)
3.2 nV/√Hz maximum input voltage noise at 1 kHz
Figure 1.
200 fA/√Hz current noise at 1 kHz
10µ
Excellent ac specifications G = 100
2 MHz bandwidth (G = 100)

TOTAL NOISE DENSITY AT 1kHz (V/√Hz)

0.6 μs settling time to 0.001% (G = 10) BEST AVAILABLE
7mA LOW NOISE IN-AMP
1µ
80 dB minimum CMRR at 20 kHz (G = 1)
High precision dc performance
84 dB CMRR minimum (G = 1)
100n
2 nA maximum input bias current
Inputs protected to 40 V from opposite supply
BEST AVAILABLE
Gain set with a single resistor (G = 1 to 10,000) 1mA LOW POWER IN-AMP
10n
ENHANCED PRODUCT FEATURES AD8421

Supports defense and aerospace applications (AQEC standard) RS NOISE ONLY

Military temperature range (−55°C to +125°C) 1n

11139-078
100 1k 10k 100k 1M
Controlled manufacturing baseline SOURCE RESISTANCE, RS (Ω)
One assembly/test site
Figure 2. Noise Density vs. Source Resistance
One fabrication site
Enhanced product change notification
Qualification data available on request
The AD8421-EP delivers 3 nV/√Hz input voltage noise and
GENERAL DESCRIPTION 200 fA/√Hz current noise with only 2 mA quiescent current,
The AD8421-EP is a low cost, low power, extremely low noise, making it an ideal choice for measuring low level signals. For
ultralow bias current, high speed instrumentation amplifier that applications with high source impedance, the AD8421-EP employs
is ideally suited for a broad spectrum of signal conditioning and innovative process technology and design techniques to provide
data acquisition applications. This product features extremely noise performance that is limited only by the sensor.
high CMRR, allowing it to extract low level signals in the presence The AD8421-EP uses unique protection methods to ensure robust
of high frequency common-mode noise over a wide inputs while still maintaining very low noise. This protection
temperature range. allows input voltages up to 40 V from the opposite supply rail
The 10 MHz bandwidth, 35 V/μs slew rate, and 0.6 μs settling without damage to the part.
time to 0.001% (G = 10) allow the AD8421-EP to amplify high A single resistor sets the gain from 1 to 10,000. The reference
speed signals and excel in applications that require high channel pin can be used to apply a precise offset to the output voltage.
count, multiplexed systems. Even at higher gains, the current
The AD8421-EP is specified over the military temperature range of
feedback architecture maintains high performance; for example,
−55°C to +125°C. It is available in an 8-lead MSOP package.
at G = 100, the bandwidth is 2 MHz and the settling time is
0.8 μs. The AD8421-EP has excellent distortion performance, Additional application and technical information can be found
making it suitable for use in demanding applications such as in the AD8421 data sheet.
vibration analysis.

Rev. 0 Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved.
Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
AD8421-EP Enhanced Product

TABLE OF CONTENTS
Features .............................................................................................. 1 ESD Caution...................................................................................6
General Description ......................................................................... 1 Pin Configuration and Function Descriptions..............................7
Revision History ............................................................................... 2 Typical Performance Characteristics ..............................................8
Specifications..................................................................................... 3 Outline Dimensions ....................................................................... 18
Absolute Maximum Ratings ............................................................ 6 Ordering Guide .......................................................................... 18
Thermal Resistance ...................................................................... 6

REVISION HISTORY
5/13—Revision 0: Initial Version

Rev. 0 | Page 2 of 20
Enhanced Product AD8421-EP

SPECIFICATIONS
VS = ±15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.

Table 1.

Parameter Test Conditions/ Comments Min Typ Max Unit

COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ Source Imbalance VCM = −10 V to +10 V
G=1 84 dB
G = 10 104 dB
G = 100 124 dB
G = 1000 134 dB
Over Temperature, G = 1 TA = −55°C to +125°C 80 dB
CMRR at 20 kHz VCM = −10 V to +10 V
G=1 80 dB
G = 10 90 dB
G = 100 100 dB
G = 1000 100 dB
NOISE
Voltage Noise, 1 kHz 1 VIN+, VIN− = 0 V
Input Voltage Noise, eni 3 3.2 nV/√Hz
Output Voltage Noise, eno 60 nV/√Hz
Peak to Peak, RTI f = 0.1 Hz to 10 Hz
G=1 2 µV p-p
G = 10 0.5 µV p-p
G = 100 to 1000 0.07 µV p-p
Current Noise
Spectral Density f = 1 kHz 200 fA/√Hz
Peak to Peak, RTI f = 0.1 Hz to 10 Hz 18 pA p-p
VOLTAGE OFFSET 2
Input Offset Voltage, VOSI VS = ±5 V to ±15 V 70 µV
Over Temperature TA = −55°C to +125°C 160 µV
Average TC 0.9 µV/°C
Output Offset Voltage, VOSO 600 µV
Over Temperature TA = −55°C to +125°C 1.5 mV
Average TC 9 µV/°C
Offset RTI vs. Supply (PSR) VS = ±2.5 V to ±18 V
G=1 90 120 dB
G = 10 110 120 dB
G = 100 124 130 dB
G = 1000 130 140 dB
INPUT CURRENT
Input Bias Current 1 2 nA
Over Temperature TA = −55°C to +125°C 8 nA
Average TC 50 pA/°C
Input Offset Current 0.5 2 nA
Over Temperature TA = −55°C to +125°C 3 nA
Average TC 1 pA/°C

Rev. 0 | Page 3 of 20
AD8421-EP Enhanced Product

Parameter Test Conditions/ Comments Min Typ Max Unit

DYNAMIC RESPONSE
Small Signal Bandwidth −3 dB
G=1 10 MHz
G = 10 10 MHz
G = 100 2 MHz
G = 1000 0.2 MHz
Settling Time 0.01% 10 V step
G=1 0.7 µs
G = 10 0.4 µs
G = 100 0.6 µs
G = 1000 5 µs
Settling Time 0.001% 10 V step
G=1 1 µs
G = 10 0.6 µs
G = 100 0.8 µs
G = 1000 6 µs
Slew Rate
G = 1 to 100 35 V/µs
GAIN 3 G = 1 + (9.9 kΩ/RG)
Gain Range 1 10,000 V/V
Gain Error VOUT = ±10 V
G=1 0.05 %
G = 10 to 1000 0.3 %
Gain Nonlinearity VOUT = −10 V to +10 V
G=1 RL ≥ 2 kΩ 1 ppm
RL = 600 Ω 1 3 ppm
G = 10 to 1000 RL ≥ 600 Ω 30 50 ppm
VOUT = −5 V to +5 V 5 10 ppm
Gain vs. Temperature3
G=1 5 ppm/°C
G>1 −80 ppm/°C
INPUT
Input Impedance
Differential 30||3 GΩ||pF
Common Mode 30||3 GΩ||pF
Input Operating Voltage Range 4 VS = ±2.5 V to ±18 V −VS + 2.3 +VS − 1.8 V
Over Temperature TA = −55°C −VS + 2.5 +VS − 2.0 V
TA = +125°C −VS + 2.1 +VS − 1.8 V
OUTPUT RL = 2 kΩ
Output Swing VS = ±2.5 V to ±18 V −VS + 1.2 +VS − 1.7 V
Over Temperature TA = −55°C to +125°C −VS + 1.4 +VS − 1.9 V
Short-Circuit Current 65 mA
REFERENCE INPUT
RIN 20 kΩ
IIN VIN+, VIN− = 0 V 20 24 µA
Voltage Range −VS +VS V
Reference Gain to Output 1± V/V
0.0001

Rev. 0 | Page 4 of 20
Enhanced Product AD8421-EP

Parameter Test Conditions/ Comments Min Typ Max Unit

POWER SUPPLY
Operating Range Dual supply ±2.5 ±18 V
Single supply 5 36 V
Quiescent Current 2 2.3 mA
Over Temperature TA = −55°C to +125°C 2.8 mA
TEMPERATURE RANGE
For Specified Performance −55 +125 °C
1
Total voltage noise = √(eni2 + (eno/G)2 + eRG2). See the AD8421 data sheet for more information.
2
Total RTI VOS = (VOSI) + (VOSO/G).
3
These specifications do not include the tolerance of the external gain setting resistor, RG. For G > 1, add RG errors to the specifications given in this table.
4
Input voltage range of the AD8421-EP input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
See the Typical Performance Characteristics section for more information.

Rev. 0 | Page 5 of 20
AD8421-EP Enhanced Product

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE
Table 2.
Parameter Rating θJA is specified for a device in free air using a 4-layer JEDEC
printed circuit board (PCB).
Supply Voltage ±18 V
Output Short-Circuit Current Duration Indefinite Table 3.
Maximum Voltage at −IN or +IN1 −VS + 40 V Package θJA Unit
Minimum Voltage at −IN or +IN +VS − 40 V 8-Lead MSOP 138.6 °C/W
Maximum Voltage at REF2 +VS + 0.3 V
Minimum Voltage at REF −VS − 0.3 V
Storage Temperature Range −65°C to +150°C ESD CAUTION
Operating Temperature Range −55°C to +125°C
Maximum Junction Temperature 150°C
ESD
Human Body Model 2 kV
Charged Device Model 1.25 kV
Machine Model 0.2 kV
1
For voltages beyond these limits, use input protection resistors. See the
AD8421 data sheet for more information.
2
There are ESD protection diodes from the reference input to each supply, so
REF cannot be driven beyond the supplies in the same way that +IN and −IN
can. See the AD8421 data sheet for more information.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

Rev. 0 | Page 6 of 20
Enhanced Product AD8421-EP

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

AD8421-EP
–IN 1 8 +VS

RG 2 7 VOUT

RG 3 6 REF

+IN 4 5 –VS

11139-002
TOP VIEW
(Not to Scale)

Figure 3. Pin Configuration

Table 4. Pin Function Descriptions

Pin No. Mnemonic Description
1 −IN Negative Input Terminal.
2, 3 RG Gain Setting Terminals. Place resistor across the RG pins to set the gain. G = 1 + (9.9 kΩ/RG).
4 +IN Positive Input Terminal.
5 −VS Negative Power Supply Terminal.
6 REF Reference Voltage Terminal. Drive this terminal with a low impedance voltage source to level shift the output.
7 VOUT Output Terminal.
8 +VS Positive Power Supply Terminal.

Rev. 0 | Page 7 of 20
AD8421-EP Enhanced Product

TYPICAL PERFORMANCE CHARACTERISTICS

TA = 25°C, VS = ±15 V, VREF = 0 V, RL = 2 kΩ, unless otherwise noted.
600
600

500
500

400
400
UNITS

UNITS
300 300

200 200

100 100

0 11139-003
0

11139-006
–60 –40 –20 0 20 40 60 –400 –300 –200 –100 0 100 200 300 400
INPUT OFFSET VOLTAGE (µV) OUTPUT OFFSET VOLTAGE (µV)

Figure 4. Typical Distribution of Input Offset Voltage Figure 7. Typical Distribution of Output Offset Voltage

1800 1200

1500 1000

1200 800
UNITS

UNITS

900 600

600 400

300 200

0 0
11139-004

–2.0 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 2.0

11139-007
–2.0 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 2.0
INPUT BIAS CURRENT (nA) INPUT OFFSET CURRENT (nA)

Figure 5. Typical Distribution of Input Bias Current Figure 8. Typical Distribution of Input Offset Current

1600
1400
1400
1200
1200
1000
1000
UNITS

800
UNITS

800

600
600

400
400

200
200

0
0
11139-005

–20 –15 –10 –5 0 5 10 15 20

11139-008

–120 –90 –60 –30 0 30 60 90 120

PSRR (µV/V) CMRR (µV/V)

Figure 6. Typical Distribution of PSRR (G = 1) Figure 9. Typical Distribution of CMRR (G = 1)

Rev. 0 | Page 8 of 20
Enhanced Product AD8421-EP
15 4
G=1 VS = ±15V G = 100
3
10 VS = ±5V
COMMON-MODE VOLTAGE (V)

COMMON-MODE VOLTAGE (V)

2
VS = ±12V
5
1

0 0 VS = ±2.5V

–1
–5
–2

–10
–3

–15 –4

11139-009

11139-012
–15 –10 –5 0 5 10 15 –4 –3 –2 –1 0 1 2 3 4
OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V)

Figure 10. Input Common-Mode Voltage vs. Output Voltage; Figure 13. Input Common-Mode Voltage vs. Output Voltage;
VS = ±12 V and ±15 V (G = 1) VS = ±2.5 V and ±5 V (G = 100)

4 40
G=1 VS = 5V
VS = ±5V G=1
3 30
COMMON-MODE VOLTAGE (V)

20
2

INPUT CURRENT (mA) 10

1 VS = ±2.5V
0
0
–10

–1
–20

–2
–30

–3 –40
11139-010

11139-013
–4 –3 –2 –1 0 1 2 3 4 –35 –30 –25 –20 –15 –10 –5 0 5 10 15 20 25 30 35 40
OUTPUT VOLTAGE (V) INPUT VOLTAGE (V)

Figure 11. Input Common-Mode Voltage vs. Output Voltage; Figure 14. Input Overvoltage Performance; G = 1, +VS = 5 V, −VS = 0 V
VS = ±2.5 V and ±5 V (G = 1)

15 30
G = 100 VS = ±15V VS = ±15V
G=1
10 20
COMMON-MODE VOLTAGE (V)

VS = ±12V
INPUT CURRENT (mA)

5 10

0 0

–5 –10

–10 –20

–15 –30
11139-014
11139-011

–15 –10 –5 0 5 10 15 –25 –20 –15 –10 –5 0 5 10 15 20 25

OUTPUT VOLTAGE (V) INPUT VOLTAGE (V)

Figure 12. Input Common-Mode Voltage vs. Output Voltage; Figure 15. Input Overvoltage Performance; G = 1, VS = ±15 V
VS = ±12 V and ±15 V (G = 100)

Rev. 0 | Page 9 of 20
AD8421-EP Enhanced Product
40 160
VS = 5V GAIN = 1000
G = 100
30 140
GAIN = 100
20 120 GAIN = 10
INPUT CURRENT (mA)

POSITIVE PSRR (dB)

10 100 GAIN = 1

0 80

–10 60

–20 40

–30 20

–40 0

11139-018
11139-015
–35 –30 –25 –20 –15 –10 –5 0 5 10 15 20 25 30 35 40 0.1 1 10 100 1k 10k 100k 1M
INPUT VOLTAGE (V) FREQUENCY (Hz)

Figure 16. Input Overvoltage Performance; +VS = 5 V, −VS = 0 V, G = 100 Figure 19. Positive PSRR vs. Frequency

30 160
VS = ±15V GAIN = 1000
G = 100
140 GAIN = 100
20
GAIN = 10
120
INPUT CURRENT (mA)

NEGATIVE PSRR (dB)

10 GAIN = 1
100

0 80

60
–10

40
–20
20

–30 0

11139-019
11139-016

–25 –20 –15 –10 –5 0 5 10 15 20 25 0.1 1 10 100 1k 10k 100k 1M

INPUT VOLTAGE (V) FREQUENCY (Hz)

Figure 17. Input Overvoltage Performance; VS = ±15 V, G = 100 Figure 20. Negative PSRR vs. Frequency

2.5 70
GAIN = 1000
2.0 60

1.5 50
GAIN = 100
1.0 40
BIAS CURRENT (nA)

0.5 30
GAIN (dB)

GAIN = 10
0 20

–0.5 10
GAIN = 1
–1.0 0

–1.5 –10

–2.0 –20

–2.5 –30
11139-020
11139-017

–12 –10 –8 –6 –4 –2 0 2 4 6 8 10 12 14 100 1k 10k 100k 1M 10M

COMMON-MODE VOLTAGE (V) FREQUENCY (Hz)

Figure 18. Input Bias Current vs. Common-Mode Voltage Figure 21. Gain vs. Frequency

Rev. 0 | Page 10 of 20
Enhanced Product AD8421-EP
160 6
GAIN = 1000 REPRESENTATIVE SAMPLES

GAIN = 100 4
140

GAIN = 10 2

BIAS CURRENT (nA)

120
CMRR (dB)

0
GAIN = 1
100
–2

80
–4

60 –6

40 –8

11139-125
0.1 1 10 100 1k 10k 100k –55 –40 –25 –10 5 20 35 50 65 80 95 110 125

11139-021
TEMPERATURE (°C)
FREQUENCY (Hz)

Figure 22. CMRR vs. Frequency Figure 25. Input Bias Current vs. Temperature

160 100
GAIN = 1000 REPRESENTATIVE SAMPLES
80 GAIN = 1

140 60
GAIN = 100
40

GAIN ERROR (µV/V)

120
GAIN = 10 20
CMRR (dB)

100 0
GAIN = 1
–20
80 –40

–60
60
–80

40 –100

11139-126
0.1 1 10 100 1k 10k 100k –55 –40 –25 –10 5 20 35 50 65 80 95 110 125
11139-022

TEMPERATURE (°C)
FREQUENCY (Hz)

Figure 23. CMRR vs. Frequency, 1 kΩ Source Imbalance Figure 26. Gain vs. Temperature (G = 1)

2.0 15
REPRESENTATIVE SAMPLES
GAIN = 1
CHANGE IN INPUT OFFSET VOLTAGE (µV)

10
1.5

5
CMRR (µV/V)

1.0

0.5
–5

0 –10

–0.5 –15
11139-127

–55 –40 –25 –10 5 20 35 50 65 80 95 110 125

11139-023

0 5 10 15 20 25 30 35 40 45 50
WARM-UP TIME (Seconds) TEMPERATURE (°C)

Figure 24. Change in Input Offset Voltage (VOSI) vs. Warm-Up Time Figure 27. CMRR vs. Temperature (G = 1)

Rev. 0 | Page 11 of 20
AD8421-EP Enhanced Product
3.0 45
VS = ±15V
40
2.5 –SR
35
SUPPLY CURRENT (mA)

2.0 30

SLEW RATE (V/µs)

+SR
25
1.5
20

1.0 15

10
0.5
5

0 0

11139-131
11139-128
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125 –55 –40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 28. Supply Current vs. Temperature (G = 1) Figure 31. Slew Rate vs. Temperature, VS = ±5 V (G = 1)

80 +VS
–55°C
–0.5 –40°C
60 +25°C
ISHORT+ –1.0 +85°C

REFERRED TO SUPPLY VOLTAGES

+105°C
SHORT CIRCUIT CURRENT (mA)

40
–1.5 +125°C
20 INPUT VOLTAGE (V)
–2.0
0 –2.5

–20
+2.5
–40
+2.0
–60
+1.5
–80
+1.0
ISHORT–
–100 +0.5

–120 –VS
11139-129

2 4 6 8 10 12 14 16 18

11139-132
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C) SUPPLY VOLTAGE (±VS)

Figure 29. Short-Circuit Current vs. Temperature (G = 1) Figure 32. Input Voltage Limit vs. Supply Voltage

40 15
–SR
35
+SR 10
OUTPUT VOLTAGE SWING (V)

30
5
SLEW RATE (V/µs)

25
+125°C
20 0 +105°C
+85°C
+25°C
15 –40°C
–5 –55°C

10
–10
5

0 –15
11139-135
11139-130

–55 –40 –25 –10 5 20 35 50 65 80 95 110 125 100 1k 10k 100k

TEMPERATURE (°C) LOAD (Ω)

Figure 30. Slew Rate vs. Temperature, VS = ±15 V (G = 1) Figure 33. Output Voltage Swing vs. Load Resistance

Rev. 0 | Page 12 of 20
Enhanced Product AD8421-EP
+VS 100
–55°C GAIN = 1000
–40°C 80
–2 +25°C
+85°C
REFERRED TO SUPPLY VOLTAGES

–4 +105°C 60
OUTPUT VOLTAGE SWING (V)

+125°C
40

NONLINEARITY (ppm)
–6

20
RL = 600Ω
0

–20

+6 –40

+4 –60

+2 –80

–VS –100

11139-072
11139-136
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 –10 –8 –6 –4 –2 0 2 4 6 8 10
OUTPUT CURRENT (A) OUTPUT VOLTAGE (V)

Figure 34. Output Voltage Swing vs. Output Current Figure 37. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT = ±10 V

5 100
GAIN = 1 GAIN = 1000
4 80

3 60

2
NONLINEARITY (ppm)

40

1 NONLINEARITY (ppm) 20
RL = 600Ω
0 0

–1 –20

–2 –40

–3 –60

–4 RL = 2kΩ
–80
RL = 10kΩ
–5 –100
11139-035

11139-073
–10 –8 –6 –4 –2 0 2 4 6 8 10 –5 –4 –3 –2 –1 0 1 2 3 4 5
OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V)
Figure 35. Gain Nonlinearity (G = 1), RL = 10 kΩ, 2 kΩ Figure 38. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT = ±5 V

5
1k
GAIN = 1
VOLTAGE NOISE SPECTRAL DENSITY (nV/√Hz)

2
NONLINEARITY (ppm)

100
1 GAIN = 1
RL = 600Ω
0

–1

–2 10 GAIN = 10

–3 GAIN = 100

–4 GAIN = 1000

–5
1
11139-036

–10 –8 –6 –4 –2 0 2 4 6 8 10
11139-037

1 10 100 1k 10k 100k

OUTPUT VOLTAGE (V)
FREQUENCY (Hz)
Figure 36. Gain Nonlinearity (G = 1), RL = 600 Ω Figure 39. RTI Voltage Noise Spectral Density vs. Frequency

Rev. 0 | Page 13 of 20
AD8421-EP Enhanced Product
30
G = 1000, 40nV/DIV

25

OUTPUT VOLTAGE (V p-p)

20

15
G = 1, 1µV/DIV

10

11139-038
1s/DIV
0

11139-045
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 40. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1, G = 1000)
Figure 43. Large Signal Frequency Response

10k
CURRENT NOISE (fA/√Hz)

1k
5V/DIV

720ns TO 0.01%
1.12µs TO 0.001%

100

0.002%/DIV

11139-041
10 1µs/DIV
11139-039

0.1 1 10 100 1k 10k 100k

FREQUENCY (Hz)

Figure 41. Current Noise Spectral Density vs. Frequency

Figure 44. Large Signal Pulse Response and Settling Time (G = 1),
10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF

5V/DIV

420ns TO 0.01%
604ns TO 0.001%

0.002%/DIV
11139-040

5pA/DIV 1s/DIV
11139-042

1µs/DIV

Figure 42. 0.1 Hz to 10 Hz Current Noise

Figure 45. Large Signal Pulse Response and Settling Time (G = 10),
10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF

Rev. 0 | Page 14 of 20
Enhanced Product AD8421-EP

GAIN = 1

5V/DIV

704ns TO 0.01%
764ns TO 0.001%

0.002%/DIV

11139-043

11139-046
1µs/DIV 50mV/DIV 1µs/DIV

Figure 46. Large Signal Pulse Response and Settling Time (G = 100), Figure 49. Small Signal Pulse Response (G = 1), RL = 600 Ω, CL = 100 pF
10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF

GAIN = 10

5V/DIV

3.8µs TO 0.01%
5.76µs TO 0.001%

0.002%/DIV
11139-044

11139-047
4µs/DIV 50mV/DIV 1µs/DIV

Figure 47. Large Signal Pulse Response and Settling Time (G = 1000), Figure 50. Small Signal Pulse Response (G = 10), RL = 600 Ω, CL = 100 pF
10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF

2500
GAIN = 100

2000
SETTLING TIME (ns)

1500

1000 SETTLED TO 0.001%

SETTLED TO 0.01%
500
11139-048

20mV/DIV 1µs/DIV
GAIN = 1
0
11139-054

2 4 6 8 10 12 14 16 18 20
STEP SIZE (V)

Figure 48. Settling Time vs. Step Size (G = 1), RL = 2 kΩ, CL = 100 pF Figure 51. Small Signal Pulse Response (G = 100), RL = 600 Ω, CL = 100 pF

Rev. 0 | Page 15 of 20
AD8421-EP Enhanced Product
–40
GAIN = 1000 NO LOAD VOUT = 10V p-p
–50 RL = 2kΩ
RL = 600Ω
–60

–70

AMPLITUDE (dBc)
–80

–90

–100

–110

–120

–130

11139-049
20mV/DIV 2µs/DIV –140

–150

11139-056
10 100 1k 10k
FREQUENCY (Hz)
Figure 52. Small Signal Pulse Response (G = 1000), RL = 600 Ω, CL = 100 pF Figure 55. Third Harmonic Distortion vs. Frequency (G = 1)

100pF –40
G=1 NO LOAD VOUT = 10V p-p
20pF 50pF
RL = 2kΩ
NO LOAD –50 RL = 600Ω

–60
AMPLITUDE (dBc)
–70

–80

–90

–100
11139-053

–110
50mV/DIV 1µs/DIV
–120

11139-075
10 100 1k 10k
FREQUENCY (Hz)
Figure 53. Small Signal Response with Various Capacitive Loads (G = 1),
RL = Infinity Figure 56. Second Harmonic Distortion vs. Frequency (G = 1000)

–40
RL ≥ 600Ω VOUT = 10V p-p –40
–50 RL ≥ 600Ω VOUT = 10V p-p
–50
–60

–70 –60
AMPLITUDE (dBc)

–80
AMPLITUDE (dBc)

–70
–90

–100 –80

–110 –90
–120
–100
–130

–140 –110

–150
–120
11139-055

10 100 1k 10k
11139-076

10 100 1k 10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 54. Second Harmonic Distortion vs. Frequency (G = 1) Figure 57. Third Harmonic Distortion vs. Frequency (G = 1000)

Rev. 0 | Page 16 of 20
Enhanced Product AD8421-EP
–20
G =1 VOUT = 10V p-p
–30 G = 10 RL = 2kΩ
–40 G = 100
G = 1000
–50

–60
AMPLITUDE (dBc)

–70

–80
–90

–100
–110

–120
–130

–140

11139-077
10 100 1k 10k
FREQUENCY (Hz)

Figure 58. THD vs. Frequency

Rev. 0 | Page 17 of 20
AD8421-EP Enhanced Product

OUTLINE DIMENSIONS
3.20
3.00
2.80

8 5 5.15
3.20 4.90
3.00 4.65
2.80 1
4

PIN 1
IDENTIFIER

0.65 BSC

0.95 15° MAX

0.85 1.10 MAX
0.75
0.80
0.15 6° 0.23
0.40 0.55
0.05 0° 0.09 0.40
COPLANARITY 0.25

10-07-2009-B
0.10

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 59. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters

ORDERING GUIDE
Model 1 Temperature Range Package Description Package Option Branding
AD8421TRMZ-EP −55°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 Y4T
AD8421TRMZ-EP-R7 −55°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 Y4T
1
Z = RoHS Compliant Part.

Rev. 0 | Page 18 of 20
Enhanced Product AD8421-EP

NOTES

Rev. 0 | Page 19 of 20
AD8421-EP Enhanced Product

NOTES

©2013 Analog Devices, Inc. All rights reserved. Trademarks and

registered trademarks are the property of their respective owners.
D11139-0-5/12(0)

Rev. 0 | Page 20 of 20