(1) Contact to source/drain of MOSFET.

Al
SiO2 SiO2 “ideal”
n+
p-Si

Al
SiO2 SiO2
n+ “short”, ohmic contact
Alignment error ∆
p-Si

1
Solution: Design n+ region larger than contact hole

Al

SiO2 SiO2
n+

2
 (2) Poly-Gate Overlap over FOX

“Ideal”

S/D implant
Electrical
Fox n+
short

“With
poly-gate
alignment
error”

Professor N. Cheung, U.C. Berkeley 3

 Solution: Make poly gate longer to overlap the FOX

Professor N. Cheung, U.C. Berkeley 4

 Total Overlay Tolerance

σ 2
total = ∑σi 2

σi = std. deviation of overlay error for ith masking step

σtotal = std. deviation for total overlay error

Layout design-rule specification should be > σtotal

Professor N. Cheung, U.C. Berkeley 5

 Standing Waves
*Photoresist has a finite thickness

hv

Higher Intensity Faster Development rate

Lower Intensity Slower Development rate

Positive
Photoresist

substrate
Positive
After development Photoresist.
substrate
Professor N. Cheung, U.C. Berkeley 6
 Standing
reflecting wave effect
surface

Air Photoresist Oxide

E4 Resist profile and energy

deposition depend on
E3
oxide thickness underneath
E2
E
1
(see handout for derivation)
x=0 x=d r x=d

T I23(max)
1
I23 (x) = ⌠ (E (x)+E3(x)) 2dt
T⌡ 2
0
1
= 2 (E2 - E3)2 + 2E2E3sin2[k(d-x)] I23(min)

1 1
∴ I23 (max) = 2(E2 + E3) 2 ; I 23(min) = 2 (E2 - E3)2
x

d
2 πn
Intensity minima occur at : (d-x) =0, π , 2 π, .......
λ
2πn
Intensity maxima occur at : (d-x) = π/2, 3 π/2 , 5 π/2 , .......
λ
Professor N. Cheung, U.C. Berkeley 7
EE143 S06 Lecture 12

x
P.R. d

SiO2/Si substrate

λ
Intensity = minimum when x =d −m m = 0, 1, 2,...
2n
λ
Intensity = maximum when x = d − m m = 1, 3, 5,...
4n
n = refractive index of resist
Professor N. Cheung, U.C. Berkeley 8
EE143 S06 Lecture 12

Simulated Resist Cross-section as function of

development time

Professor N. Cheung, U.C. Berkeley 9

 Proximity Scattering

Professor N. Cheung, U.C. Berkeley 10

 Approaches for Reducing Substrate Effects

• Use absorption dyes in photoresist

• Use anti-reflection coating (ARC)
• Use multi-layer resist process
1: thin planar layer for high-resolution imaging (imaging layer)
2: thin develop-stop layer, used for pattern transfer to 3 (etch stop)
3: thick layer of hardened resist (planarization layer)

Professor N. Cheung, U.C. Berkeley 11

 Electron-Beam Lithography

12.3 Angstroms
λ=
V for V in Volts

Example: 30 kV e-beam
=> λ = 0.07 Angstroms
NA = 0.002 – 0.005
Resolution < 1 nm
But beam current needs
to be 10’s of mA for a
throughput of more
than 10 wafers an hour.
Professor N. Cheung, U.C. Berkeley 12
EE143 S06 Lecture 12

Low Throughput
for both raster and Variable
vector scanning (Serial Beam-shape
Process) EBL

Stencil
Mask
EBL

Professor N. Cheung, U.C. Berkeley 13

 Source: A. Liddle, LBL
Professor N. Cheung, U.C. Berkeley 14
 e-beam lithography
resolution factors
• beam quality ( ~1 nm)
• secondary electrons ( lateral range: few nm)

performance records
organic resist PMMA ~ 7 nm
inorganic resist, b.v. AlF3 ~ 1-2 nm
Professor N. Cheung, U.C. Berkeley 15
 Lecture 12

The Proximity Effect

Monte Carlo simulation of electron trajectories

Professor N. Cheung, U.C. Berkeley 16

 X-Ray Source

Synchrotron
Radiation

Professor N. Cheung, U.C. Berkeley 17

 X-Ray Proximity Printing

λ ≈ 10 Angstroms

lm ∝ λg

Professor N. Cheung, U.C. Berkeley 18

 X-Ray Projection Lithography

Professor N. Cheung, U.C. Berkeley 19

 Alpha-Machine for EUV Lithography

Stulen & Sweeny

Professor N. Cheung, U.C. Berkeley 20

Professor N. Cheung, U.C. Berkeley 21
 Resist patterned by Extreme UV Lithography

Professor N. Cheung, U.C. Berkeley 22

Professor N. Cheung, U.C. Berkeley 23
 Immersion Lithography
•A liquid with index of refraction n>1 is introduced between the
imaging optics and the wafer.
Advantages
1) Resolution is improved
proportionately to n. For
water, the index of
refraction at λ = 193 nm
is 1.44, improving the
resolution significantly,
from 90 to 64 nm.
2) Increased depth of focus at
larger features, even those
that are printable with dry
lithography.

Professor N. Cheung, U.C. Berkeley 24

 B.J. Lin Sept. 02

Drag a drop schemes also being considered by UTA.

Professor N. Cheung, U.C. Berkeley 25
Professor N. Cheung, U.C. Berkeley 26
 Maskless Lithography

Professor N. Cheung, U.C. Berkeley 27

EE143 S06 Lecture 12

Professor N. Cheung, U.C. Berkeley 28

For your reference only
29