2SC3679

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC3679 Unit Symbol Conditions 2SC3679 Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0
µA

1.8
VCBO 900 V ICBO VCB=800V 100max 9.6 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

19.9±0.3
VEBO 7 V V(BR)CEO IC=10mA 800min V

4.0
a ø3.2±0.1
IC 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30
b
IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max V
PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 125 2 10 –5 0.3 –1 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
700mA 600mA (I C /I B =5) (V C E =4V)
5 5
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )

500mA

4 400 mA 4

Collector Current I C (A)

2
Collector Current I C (A)

300mA

3 3

mp)
200mA

)
Temp

p)
e Te

ase Tem
V B E (sat)

(Cas

(Case
2 1 2
I B =100mA –55˚C (Case Temp)

125˚C

–55˚C (C
25˚C (Case Temp)

25˚C
e Temp)
125˚C (Cas
m p)
C

1 1
–5 5 ˚C
25˚
Te

se
Ca
V C E (sat) 125˚C (
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/ W)

(V C E =4V)
50 10 2
t on• t s t g • t f (µ s)

5 t s tg
125˚C
DC Cur rent Gain h F E

V C C 250V
Transient Thermal Resistance

1
25˚C I C :I B 1 :–I B2
=2:0.3:1Const.
0.5
Switching T im e

–55˚C
1 tf
10
0.5
t on

5 0.2 0.1
0.02 0.05 0.1 0.5 1 5 0.1 0.5 1 5 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 100

10 10
10 1m 10
10

m 0µ
M aximum Power Dissipa ti on P C (W)

s s s
µs

5 5
10
0m
W

s
ith
Collector Curren t I C ( A)

Collector Curren t I C (A)

DC

In
fin
( Tc

1 1
ite
=2

he
5

0.5 0.5 50
at
C)

si
nk

Without Heatsink
0.1 Without Heatsink 0.1 Natural Cooling
Natural Cooling L=3mH
0.05 0.05 IB2=–1.0A
Duty:less than1%

Without Heatsink
3.5
0.01 0.01 0
5 10 50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

68