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XNEM-program
1- Theory
Lithography is the technique used to transfer a computer generated pattern onto a substrate
(silicon, glass, GaAs, etc.). This pattern is subsequently used to etch an underlying thin film
(oxide, nitride, etc.) for various purposes (doping, etching, etc.). Furthermore, photolithography
uses ultraviolet (UV) light source for purpose of patterning.
The patterned resist would identify the areas that exposed to deposition as an example building
a layer of silicon dioxide above silicon substrate. Patterned photo resist is also used as a hard
mask for some etch processes. The photo resist is used to protect the areas of the film that are
not to be etched.
2- Procedures
A. Alignment: - putting the mask in the right position is a critical issue. Due to the microscopic
size of these devices, a misalignment of one micrometer (micron or 1μm) or even smaller
can destroy the entire device and all the other devices on the wafer. It is important that each
layer is aligned properly and within specifications to the previous layers and subsequent
layers.
B. Expose: - ultraviolet (UV) light from a source travels through the mask to the resist, exposing
the resist. UV light sources normally include mercury vapor lamps. The UV light hitting the
resist causes a chemical reaction between the resist and the light make it soluble and ready
for the step of development.
Fig .6 .1 fig .6 . 2
3) Develop – The exposed photoresist is subsequently dissolved with a chemical developer. The
timing of this process is critical. Too long of a time leads to an "overdeveloped resist"; too little of
a time leads to an "underdeveloped resist" – both of which negatively affect line width. An
underdeveloped resist could prevent access to the underlying layer by leaving too much resist
on the wafer. To stop the chemical reaction of the developer with the photoresist, the wafers are
rinsed with (DI) water then spin-dried fig 7.1.
A post-develop hardbake is used to harden the photoresist for the subsequent process. In order
to do this, the temperature of the hardbake is higher than that of the softbake after coat. The
hard bake temperature for positive resist is approximately 120°C to 140°C fig 7. 2.
Fig .7 .1 immersion of substrate in HF solution fig .7 .2 hardbake at higher temperature
This device introduces an alternative way for etching; the difference here is that
this technique more expensive and complicated, however, it gives higher range of
control for etching process due to high number of variables which could be
controlled. the process work as in the sputtering where photo resist be on the surface
of substrate, and the regions to be etched be exposed through the photo resist and
inside the material. The process of etching in this type mainly be a physical process
but controlling the factors as:- 1- the intensity of plasma through( applied voltage or
frequency in case of RF sputtering) or 2- the pressure of the medium make a
combination between chemical and physical etching.
This process is effective to get straight engravings or making etching apart from the
crystalinity of the material. Thus, it can be used to achieve designs with high aspect
ratio. Finally, it gives the opportunity to get full control over the process of etching
principles of operation shown in fig .9
A
Fig .9 A) shows the total structure for DRIE which consisted of handler part and process part, B) the internal components
in the process part and the factors influence etching process.