CAT.No.

TJ 536


 


 

USKB SERIES
UL File No. E142422

Summary
Bridge diodes are being required to take up less space accompanying the reduced size of electronic
equipment. In order to respond to these needs, Shindengen has developed a new package in offering a
complete lineup of bridge diodes that can be used in a wide range of power supply environments.

Features
● Rectified forward current : 4A（US4KB80R）, 6A（US6KB80R）, 8A（US8KB80R）,
（with heat sink） 10A（US10KB80R）, 15A（US15KB80R）, 30A（US30KB80R）
● Large current capacity of 30A with compact package

● High I FSM and High Voltage

● UL approved Bridge Rectifier Diodes, registered in file number E142422

（Single In-Line Package）

● High-density mounting for improved space efficiency through the use of SIP

Application
TV, Monitor, Switching power supply, PC, Audio, Printer
CAT.No.TJ 536

RATINGS
● Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified）
Item Symbol Conditions US4KB80R US6KB80R US8KB80R Unit

Storage Temperature Tstg −55∼150 ℃

Operation Junction Temperature Tj 150 ℃

Maximun Reverse Voltage VRM 800 V

With heatsink 4 6 8
（Tc=125℃） （Tc=116℃） （Tc=108℃）
60Hz sine wave,
Average Rectified Forward Current Io A
Resistance load 2.1 2.1 2.2
Without heatsink
（Ta=30℃） （Ta=30℃） （Ta=26℃）
60Hz sine wave, Non-repetitive 1cycle peak value,
IFSM Tj=25℃
150 175 200
Peak Surge Forward Current A
245 470 575
IFSM1 Non−repetitive, Tj=25℃
（tp=3ms） （tp=1ms） （tp=1ms）

93 112 166
Current Squared Time I2t Tj=25℃, Per diode
（3ms≦t＜8.3ms） （1ms≦t＜8.3ms） （1ms≦t＜8.3ms） A2 s

Dielectric Strength Vdis Terminals to cace, AC 1 minute 2.0 kV

Mounting Torque TOR （Recommended torque：0.5N・m） 0.8 N・m

● Electrical Characteristics（Tc=25℃／Unless otherwise specified）

Forward Voltage VF Pulse measurement, Per diode MAX. 1.00 MAX. 1.00 MAX. 1.00 V
（IF=2A） （IF=3A） （IF=4A）

Reverse Current IR VR=800V, Pulse measurement, Per diode MAX. 10 μA

θjc Junction to case, With heatsink MAX. 3.5 MAX. 3.0 MAX. 2.8

Thermal Resistance θjl Junction to lead, Without heatsink MAX. 5 ℃/W

θja Junction to ambient, Without heatsink MAX. 35

Type No. US4K80R US6K80R US8K80R

● Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified）

Item Symbol Conditions US10KB80R US15KB80R US30KB80R Unit

Storage Temperature Tstg −55∼150 ℃

Operation Junction Temperature Tj 150 ℃

Maximun Reverse Voltage VRM 800 V

With heatsink 10 15 30
（Tc=100℃） （Tc=101℃） （Tc=97℃）
60Hz sine wave,
Average Rectified Forward Current Io A
Resistance load 2 2 2.1
Without heatsink
（Ta=28℃） （Ta=30℃） （Ta=27℃）
60Hz sine wave, Non−repetitive 1cycle peak value,
IFSM Tj=25℃
150 200 350
Peak Surge Forward Current A
245 330 1000
IFSM1 Non-repetitive, Tj=25℃
（tp=3ms） （tp=3ms） （tp=1ms）

93 166 510 A2s

Current Squared Time I2 t Tj=25℃, Per diode
（3ms≦t＜8.3ms） （3ms≦t＜8.3ms） （1ms≦t＜8.3ms）

Dielectric Strength Vdis Terminals to cace, AC 1 minute 2.0 kV

Mounting Torque TOR （Recommended torque：0.5N・m） 0.8 N・m

● Electrical Characteristics（Tc=25℃／Unless otherwise specified）

Forward Voltage VF Pulse measurement, Per diode MAX. 1.10 MAX. 1.10 MAX. 1.10 V
（IF=5A） （IF=7.5A） （IF=15A）

Reverse Current IR VR=800V, Pulse measurement, Per diode MAX. 10 μA

θjc Junction to case, With heatsink MAX. 2.5 MAX. 1.5 MAX. 0.8

Thermal Resistance θjl Junction to lead, Without heatsink MAX. 5 ℃/W

θja Junction to ambient, Without heatsink MAX. 35

Type No. U10K80R U15K80R U30K80R

CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US4KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
30 10 200
20 Pulse measurement per diode

IFSM
Io

 Forward Power Dissipation PF［W］

Peak Surge Forward Current I FSM［A］

tp
10 8 T D=tp/T 8.3ms 8.3ms
Forward Current IF［A］

Tc=150℃［TYP］ 150 1cycle

5
Tc= 25℃［TYP］ Tj=150℃ SIN non−repetitive
sine wave
Tj=25℃

6
2
100

1 4

0.5
50
2
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 4 5 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 7 500
heatsink Tc−sensing point
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

Sine wave on glass−epoxy substrate Sine wave

I tp）FSM
Tc

Peak Surge Forward Current I FSM1［A］

R-load R-load 400
Free in air 6 With heatsink
2.5

（
P.C.B
300
SIN tp
5 non−repetitive
2 soldering land 3mm φ Tj=25℃ sine wave

SIN 200
4
Tj=150℃
1.5
3

1
2 100
90
80
0.5 1 70
60
0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

US6KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
30 14 250
20 Pulse measurement per diode
IFSM
Io
Peak Surge Forward Current I FSM［A］
 Forward Power Dissipation PF［W］

12 tp
10 T D=tp/T SIN 200 8.3ms 8.3ms
Tc=150℃［TYP］ 1cycle
Forward Current IF［A］

Tc= 25℃［TYP］ 10 non−repetitive

5 Tj=150℃ sine wave
Tj=25℃
150
8
2

6
1 100

0.5 4

50
2
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 10 1000
on glass−epoxy substrate heatsink Tc−sensing point
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

Sine wave Sine wave

I tp）FSM
Peak Surge Forward Current I FSM1［A］

R-load R-load Tc
Free in air With heatsink
2.5
（

P.C.B 8
500
SIN tp
non−repetitive
2 soldering land 3mm φ Tj=25℃ sine wave
SIN
6

1.5
200
Tj=150℃
4
1

100
2
0.5

0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US8KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 20 300
Pulse measurement per diode

IFSM
Io

 Forward Power Dissipation PF［W］

Peak Surge Forward Current I FSM［A］

20 tp 250
T D=tp/T 8.3ms 8.3ms
SIN
Forward Current IF［A］

Tc=150℃［TYP］ 15 1cycle
Tc= 25℃［TYP］ Tj=150℃ non−repetitive
200 sine wave
Tj=25℃
5

10 150
2

1
100
5
50
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 2 4 6 8 10 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 14 1000
heatsink Tc−sensing point
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

on glass−epoxy substrate
Sine wave Sine wave

I tp）FSM
Tc

Peak Surge Forward Current I FSM1［A］

R-load R-load
Free in air 12 With heatsink
2.5

（
P.C.B
SIN 500
Tj=25℃ tp
10 non−repetitive
soldering land 3mm φ sine wave
2
SIN
8
1.5 Tj=150℃
200
6

1
4
100
0.5 2

0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

US10KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 30 200
Pulse measurement per diode
IFSM
Peak Surge Forward Current I FSM［A］
 Forward Power Dissipation PF［W］

Io

20 25 tp
T D=tp/T 8.3ms 8.3ms
150
Forward Current IF［A］

10 SIN
1cycle
non−repetitive
Tc=150℃［TYP］ Tj=150℃ sine wave
20 Tj=25℃
5 Tc= 25℃［TYP］

2 15 100

1
10

0.5 50
5
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 2 4 6 8 10 12 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 16 500
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

on glass−epoxy substrate heatsink Tc−sensing point

Sine wave Sine wave
I tp）FSM
Peak Surge Forward Current I FSM1［A］

Tc
R-load R-load 400
Free in air 14 With heatsink
2.5
（

P.C.B
300
12 tp
SIN non−repetitive
2 soldering land 3mm φ SIN Tj=25℃
sine wave
10
200
Tj=150℃
1.5 8

6
1
100
4 90
80
0.5
2 70
60
0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US15KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 40 250

Pulse measurement per diode

 Forward Power Dissipation PF［W］

IFSM
Peak Surge Forward Current I FSM［A］
Io
35
20 tp
T D=tp/T SIN 200
Forward Current IF［A］

8.3ms 8.3ms
Tc=150℃［TYP］ 30
10 1cycle
Tc= 25℃［TYP］ non−repetitive
Tj=150℃
sine wave
Tj=25℃
5 25
150

2 20

100
1 15

0.5 10
50

0.2 5

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 24 1000
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

on glass−epoxy substrate heatsink Tc−sensing point

Sine wave Sine wave

I tp）FSM
Peak Surge Forward Current I FSM1［A］
Tc
Tc
R-load R-load
Free in air 20 With heatsink

（
2.5 500
P.C.B
tp
SIN Tj=25℃ non−repetitive

2 soldering land 3mm φ 16 SIN sine wave

200
Tj=150℃
1.5 12

100

1 8

50
0.5 4

0 0 20
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

US30KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
100 80 500

Pulse measurement per diode

Peak Surge Forward Current I FSM［A］

50
 Forward Power Dissipation PF［W］

IFSM
Io
70
tp
Tc=150℃［TYP］ T D=tp/T SIN 400 8.3ms 8.3ms
20 60
Forward Current IF［A］

Tc= 25℃［TYP］ 1cycle

Tj=150℃ non−repetitive
10 sine wave
Tj=25℃
50
300
5
40
2
200
30
1

0.5 20
100
10
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 1 2 5 10 20 50 100

Forward Voltage VF［V］ Average Rectified Forward Current Io［A］ Number of Cycles ［cycle］

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 50 2000
Average Rectified Forward Current Io［A］

Average Rectified Forward Current Io［A］

on glass−epoxy substrate heatsink Tc−sensing point

Sine wave Sine wave
Peak Surge Forward Current I FSM1［A］

I tp）FSM

Tc
R-load R-load
Free in air With heatsink
2.5
（

P.C.B 40
1000
SIN tp
Tj=25℃ non−repetitive
soldering land 3mm φ sine wave
2 SIN
30
500 Tj=150℃
1.5

20
1

10 200
0.5

0 0 100
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient Temperature Ta［℃］ Case Temperature Tc［℃］ Pulse Wide tp［ms］

CAT.No.TJ 536

OUTLINE DIMENSIONS

＋


  

22.1 −0.3 C3 3.45 ＋−0.2

US4K 80R
＋ 0.15
2−

Type No.
18.5 −0.3
＋

R1.8
9771
10 −0.15

3.6 −0.2
＋
＋

0.1 Date code

Control No.
＋
2.05−0.2
Polarity
＋ 0.3

＋
2.5−0.2
2−

＋
− 0.2
2.2
18.6 −0.8

1 2 3 4
＋

0.1
＋
＋
1.1 −0.1 0.5 −0.05
＋ ＋ ＋
5.08 −0.3 5.08 −0.3 5.08 −0.3

1 2 3 4
Unit：

■The level of quality of our products is intended for use in standard applications.（OA and other office equipment, communication equipment, measuring instruments,
home appliances, industrial equipment, etc.）In the case these products are to be used in equipment or devices in which failure or malfunction of a product may
directly affect human life or health（Nuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment,
traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc.）, always make sure to contact us in
advance.
■All specifications are subject to change without notice.
■Please contact us for the latest specifications before you order.
■Please use our products after confirming the details in the specifications and the application manuals.

U.S.A
Shindengen America, Inc.
Head Office
161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A.
Phone:+1-805-445-8420 Fax:+1-805-445-8421
Chicago Office
2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A.
Phone:+1-847-444-1363 Fax:+1-847-444-0654
Europe
Shindengen UK Ltd.
Head Office
Howard Court, 12 Tewin Road,
Welwyn Garden City, Hertfordshire. AL7 1BW U.K.
Phone:+44-1707-332992 Fax:+44-1707-332955
German Branch
Kapell Strasse 6, D-40479, Dusseldorf, Germany
Phone:+49-211-4919680 Fax:+49-211-4986499
Asia
Shindengen Singapore PTE Ltd.
750D, Chai Chee Road, #05-01,
Technopark@Chai Chee, Singapore 469004
Phone:+65-6445-0082 Fax:+65-6445-6089
Shindengen（H.K.）Co., Ltd.
Head Office
Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST,
Kowloon, Hong Kong.
Phone:+852-2317-1884 Fax:+852-2314-8561
Taipei Branch
Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2,
Chung Shan N. RD. Taipei, Taiwan R.O.C.
Phone:+886-2-2560-3990 Fax:+886-2-2560-3991
Shanghai Liaison Office
W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China
Phone:+86-21-6270-1173 Fax:+86-21-6270-0419
Shindengen Electric Mfg. Co., Ltd.
Head Office
New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku,
Tokyo 100-0004, Japan
Phone : +81-3-3279-4545, 4546, 4547
Fax : +81-3-3279-4519
Seoul Office
Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, ELECTRIC MFG. CO., LTD.
【 URL 】http://www.shindengen.co.jp
Kangnam-ku, Seoul, Korea
Phone:+82-2-551-1431 Fax:+82-2-551-1432

07600（NQ）