Phys. Status Solidi A, 1–6 (2014) / DOI 10.1002/pssa.

201300717

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Part of Topical Section on
Nanoscaled Magnetism and Applications www.pss-a.com
applications and materials science

Highly sensitive magnetometer based

on the off-diagonal GMI effect in Co-rich
glass-coated microwire
Sergey Gudoshnikov*,1,2, Nikolai Usov1,2, Alexey Nozdrin3, Mihail Ipatov4, Arcady Zhukov4,5,
and Valentina Zhukova2,4
1
Pushkov Institute of Terrestrial Magnetism, Ionosphere and Radio Wave Propagation (IZMIRAN), Russian Academy of Sciences,
Kaluzhskoe sh. 4, 142190 Troitsk, Moscow, Russia
2
Magnetic and Cryoelectronic Systems Ltd., IZMIRAN, Kaluzhskoe sh. 4, 142190 Troitsk, Moscow, Russia
3
Moscow State Institute of Radio Engineering, Electronics and Automation (MIREA), Prospekt Vernadskogo 78, 119454 Moscow, Russia
4
Dpto. de Fisica de Materiales, Fac. Químicas, Universidad del Pais Vasco, 20018 San Sebastián, Spain
5
IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain

Received 30 October 2013, revised 29 December 2013, accepted 23 January 2014

Published online 20 February 2014

Keywords Co-rich glass-coated microwires, giant magnetic impedance (GMI) effect, magnetometer

* Corresponding author: e-mail gudosh@izmiran.ru, Phone: þ7 495-851-97-46, Fax: þ7 495-851-97-68

The design and performance of a magnetometer based on the off-

diagonal GMI effect in Co-rich glass-coated microwire are
presented. The sensing element of the magnetometer is a 10-mm
long piece of Co–Fe–Ni–B–Si–Mo microwire with a small
pick-up coil of 85 turns wounded around the microwire. The
electronics with a feedback circuit is used to register an
electromotive force proportional to the external magnetic field
applied along the wire axis. In the absence of the feedback current
the magnetometer is capable of measuring a narrow range of
magnetic fields, 3.5 mT, in the frequency range of 0–1 kHz, the
level of the equivalent magnetic noise being about 10 pT Hz1/2 Photo of the giant magnetoimpedance magnetometer based on
at a frequency of 300 Hz. The use of the feedback circuit increases the off-diagonal GMI effect in Co-rich glass-coated microwire.
the range of the measured magnetic fields up to 250 mT.

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1 Introduction The amorphous glass-coated ferro-
magnetic microwires with thin metallic nucleus diameters
d ¼ 5–30 mm are promising for various technological
applications [1, 2]. In particular, the microwires with nearly
zero magnetostriction show a giant magnetoimpedance
(GMI) effect [3–7] that can be used to develop sensitive
sensors for detection of a weak external magnetic field.
The diagonal GMI effect in a ferromagnetic microwire
consists of a large change of the longitudinal component of
the microwire impedance, Zzz(f,H), at a frequency f under
the influence of an external uniform magnetic field H. It
was shown experimentally [4], that the GMI ratio (Zzz(f,H)–
Zzz(f,0))/Zzz(f,0) can reach more than 600% in a weak
magnetic field of the order of 100 A m1. It is worth
mentioning that the similarly to magnetic permeability GMI
is a tensor [5, 8]. Consequently microwires with a low
negative magnetostriction having nearly circular magnetic
an anisotropy present off-diagonal GMI effect [5, 9]. The
off-diagonal GMI effect is the appearance of the electro-
motive force (EMF) in a pick-up coil wound around a
microwire when an alternating current frequency f flows
through it. The off-diagonal GMI effect is especially suitable
for the creation of a highly sensitive magnetometer, since the
EMF induced in the pick-up coil is directly proportional
to the longitudinal component of applied magnetic
field. Several laboratory prototypes of sensitive GMI

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2 S. Gudoshnikov et al.: Highly sensitive magnetometer based on the off-diagonal GMI effect
magnetometers based on ferromagnetic microwires have
been presented recently [10–12]. Furthermore, Aichi Micro
Intelligent Corporation has created a commercial version of a
GMI magnetometer with a sensitivity of 10 nT [13].
It is well known that the GMI effect of thin amorphous
Co-rich glass-coated microwires with small negative
magnetostriction is very sensitive to external magnetic
fields [14, 15] because the internal residual quenching stress,
in the presence of negative magnetostriction, creates nearly
circular magnetic anisotropy. However, it was recently
understood [9, 16] that strictly circular magnetization is
only an idealized model. In reality, most of the Co-rich
glass-coated microwires show a helical type of magnetic
anisotropy. The presence of even a weak helical anisotropy
significantly affects [9, 16] the electrodynamics properties of
a Co-rich glass-coated microwire. The aim of the present
work is to study the characteristics of a highly sensitive
magnetometer developed using the off-diagonal GMI effect
in amorphous Co-rich glass-coated microwire with a weak
helical anisotropy. It is shown that the elimination of the
influence of the helical anisotropy by means of a magnetic
field of a small dc bias current enables one to create a GMI
sensor with a good linear characteristic in the range of weak
magnetic fields.
2 Magnetometer design
2.1 GMI sensor and its characteristics The Co-rich
glass-coated microwires of different compositions and
diameters were obtained by means of the Taylor–Ulitovski
method [14, 17]. Quasistatic hysteresis loops of the
microwires were measured using both a vibrating sample
magnetometer and an induction method. We selected the
microwires with nearly circular anisotropy, showing small
hysteresis and low anisotropy field, as a consequence of a
small negative magnetostriction constant. Figure 1 shows the
magnetization curve of a piece of the microwire of 5 mm
length measured with a vibrating magnetometer. It can be
seen that the wire magnetization curve has no hysteresis, the
anisotropy field being about 95 A m1. The wire magneto-
Figure 1 The hysteresis characteristic of the 5-mm segment of
Co-rich glass-coated microwire measured by the vibration sample
magnetometer.
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Table 1 Microwire parameters.
parameter value
MW composition Co67Fe3.85Ni1.45B11.5Si14.5Mo1.7
metal core radius, R 10.7 mm
total radius, Rt 13.1 mm
magnetization, M 0.5  106 A m1
anisotropy field, Ha 95 A m1
magnetostriction, l 3  107
striction constant was estimated by means of the induction
measurements carried out at different loads and small angle
rotation [18, 19]. The parameters of the microwire selected
for creation of the sensing element are given in Table 1.
A special GMI holder has been developed to measure the
diagonal and off-diagonal GMI components of a microwire.
It has contact pads to install a piece of microwire of 6–10 mm
length and a receiving pick-up coil. The hand-made pick-up
coil of 0.5 mm diameter contains 85 turns of 50 mm copper
wire. A sharp scalpel was used to remove the glass shell
at the ends of the microwire to make electrical contacts
by soldering. Figure 2 shows a scheme of the electronics
set-up used to measure the off-diagonal GMI component.
The diagonal GMI component was measured by means of the
usual four-point method. The installation used to measure the
GMI components of amorphous microwire consists of a
power source creating the external uniform magnetic field,
and the sources of the alternating current of the frequency
f ¼ 1–10 MHz and the dc bias current. Two separate
measurement channels have been used to register the
diagonal and off-diagonal GMI components, respectively.
The GMI holder was connected to the measuring system
with a shielded twisted pair of 0.5 m length and was placed
within a solenoid within a magnetic shield made of
permalloy. The linearly varying axial magnetic field of
amplitude 1200 A m1 was applied during the measure-
ments. A microwire can be additionally supplied by a bias
current in the range of 0–5 mA. High-frequency signals of
diagonal and off-diagonal GMI components were amplified
and then detected by corresponding lock-in detectors. The
Figure 2 Block diagram of the electronics setup used to measure
the microwire GMI-characteristics.
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Phys. Status Solidi A (2014)
Figure 3 The reduced diagonal GMI component of the Co-rich
microwire in the absence of the dc bias current, Idc ¼ 0 (gray), and
for Idc ¼ 0.7 mA (black) as a function of applied magnetic field.
measured values of the GMI components were normalized to
the dc microwire resistance per unit length, Rdc ¼ r/pR2,
where r is the specific wire resistance and R is the radius of
the metallic core of the microwire.
Figure 3 shows the reduced diagonal GMI component
of the microwire, Zzz/Rdc, measured at a frequency
f ¼ 4 MHz with the amplitude of the high-frequency current
Iz ¼ 0.22 mA without DC bias current (gray curve) and
for Idc ¼ 0.7 mA (black curve). Figure 4 shows the off-
diagonal GMI component of the wire measured at the same
Idc values. In contrast to the complicated GMI signals
obtained at Idc ¼ 0, a good linear characteristic is obtained
for Idc ¼ 0.7 mA. Besides, in the latter case the measurements
are identical both for increasing and descending branches of
the applied magnetic field. This shows that the presence of a
small dc bias current is very important [9, 16] to stabilize
the behavior of the off-diagonal GMI component of the
amorphous Co-rich microwire. The measured characteristics
of the GMI sensor are given in Table 2.
Figure 4 The off-diagonal GMI component of the Co-rich
microwire in the absence of the dc bias current, Idc ¼ 0 (gray),
and for Idc ¼ 0.7 mA (black) as a function of applied magnetic field.
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Table 2 Parameters of the GMI sensor.
parameter value
wire length, L 10 mm
resistance, Rdc 36 V cm1
coil radius, Rc 0.25 mm
coil turns number, Nc 85
ac frequency, fac 4 MHz
dc bias current, Idc 0.7 mA
Zzz/Rdc 1.75 (75%)
sensitivity at Iz1 ¼ 0.22 mA, V1/B 30 V T1
sensitivity at Iz2 ¼ 2 mA, V2/B 300 V T1
Note that the GMI-sensor sensitivities, V T1, are given in
Table 2 for two amplitudes of the high-frequency excitation
current. The value Iz1 ¼ 0.22 mA was used to measure the
GMI-sensor characteristics presented in Figs. 3 and 4.
However, the current amplitude was increased up to Iz2 ¼ 2 mA
when the sensor was operated in the magnetometer regime.
2.2 Estimation of the off-diagonal GMI sensiti-
vity When an ac current flows along the microwire, the EMF
induced in the receiving pick-up coil, E ¼ 2pRcNcew(Rc), is
proportional to the number of the coil turns Nc, and the
amplitude of the circumferential component of the high-
frequency electric field in the coil, ew(Rc), where Rc is the
coil radius. It can be shown [16], that the circumferential
component of the electric field outside the microwire
decreases approximately inversely proportional to the radial
coordinate, so that ew(Rc) ¼ Rew(R)/Rc, where R is the radius
of the metallic core of the microwire. On the other hand, in
the linear regime with respect to the ac current amplitude
Iz the circumferential electric field component is proportional
to the off-diagonal component of the microwire impedance,
ew(R) ¼ IzZwz(f,H). Therefore, the EMF induced in the
receiving pick-up coil is given by E ¼ 2pRNcIzZwz(f,H).
Thus, one can see, that the sensitivity of the GMI sensor
to the applied magnetic field, apart from the obvious
parameters Nc and Iz, is determined also by the magnetic-
field dependence of the off-diagonal impedance component
Zwz(f,H). As follows from the theory [8, 16], in a range
of applied magnetic fields |H| < Ha, where Ha is the wire
anisotropy field, the off-diagonal impedance component
Zwz(f,H) is nearly proportional to the applied magnetic
field, Zwz(f,H)  CH. However, the coefficient C ¼ dZwz/dH
depends on the frequency of the ac current f, as well as on
many other parameters, such as the distribution of the residual
quenching stress over the wire cross section, the magneto-
striction constant l, the effective magnetic damping k, the
amplitude of the weak dc bias current Idc, etc. Therefore,
the analysis of the dependence of Zwz(f,H) on the applied
magnetic field H can be made only by means of numerical
simulation [16], based on the micromagnetic calculation of
the distribution of the magnetization along the wire radius as
a function of applied magnetic field, and the corresponding
solution of the Maxwell’s equations for the high-frequency
components of the propagating electromagnetic field.
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Figure 5 Calculated magnetic-field dependence of the off-diagonal
GMI component at various material parameters of amorphous
Co-rich microwire.
Figure 5 shows the results of the calculation of the
Zwz(f,H) component of Co-rich microwire used as the sensing
element in the present paper. For this wire the off-diagonal
component of the residual quenching stress, which
determines the weak helical anisotropy of the wire, was
previously [16] estimated to be swz ¼ 0.02. Simultaneously,
it was found that the magnetic field of dc bias current with an
amplitude Idc  0.7 mA stabilizes the behavior of the off-
diagonal GMI component of the wire in the whole range of
external magnetic fields. However, the magnetostriction
constant l for this wire is not precisely known, while the
amplitude of residual quenching stress and the effective
magnetic damping may depend on the annealing conditions.
As Fig. 5 shows, the maximum on the dependency of
Zwz(f,H) on H corresponds approximately to the wire
anisotropy field Ha. At fixed amplitude of the residual
quenching stress, the increase of the magnetostriction
constant l leads to an increase in the wire anisotropy field,
and thus reduces the derivative dZwz/dH in the linear region
of the transfer characteristics of the GMI sensor. On the other
hand, the decrease of the effective magnetic damping leads
to a noticeable increase in the GMI sensor sensitivity.
Comparison of experimental and calculated data for Zwz(f,H)
component gives generally a reasonable agreement between
the results. This helps one to model the parameters of a GMI
sensor that uses a piece of a Co-rich glass-coated microwire
as a sensing element.
2.3 Electronics To operate in the magnetometer
regime a simple electronic circuit was developed to register
the output signal of the off-diagonal GMI sensor. Note that
similar electronics with a feedback circuit has been used [11,
12, 20, 21] in sensitive magnetometers based on microwires,
as well as on thin-film sandwiches and amorphous ribbons.
The functional scheme of the present off-diagonal GMI
magnetometer is shown in Fig. 6. The electronics consists of
a sine wave fac ¼ 4 MHz excitation generator, a dc current
source and a detection unit. The amplitude of the high-
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Figure 6 Block diagram of the electronics developed for an off-
diagonal GMI magnetometer.
frequency excitation current is given by Iz2 ¼ 2 mA, the dc
bias current being Idc ¼ 0.7 mA. The detection unit consists
of the low-noise preamplifier, phase shifter and lock-in
detector. These elements demodulate the ac signal obtained
from the pick-up coil wound around the Co-rich microwire.
The next element is an integrator with current power output,
which is used for the generation of the feedback current and
the output signal.
When the feedback current is turned on, the signal
proportional to the applied magnetic field goes with the
opposite sign to the receiving pick-up coil and partly
compensates the external magnetic field. The resistor R2
limits the feedback current magnitude and sets the range of
the measured external magnetic field. A method of driving a
microwire and to register its signals was patented in the
Russian Federation [22].
Figure 7 shows a photograph of the electronics board
developed. The PCB size is 20 mm  80 mm. The board is
powered by the voltage of þ5.6 V. The increase in the
number of magnetometer channels is obtained by increasing
the number of cards arranged one above the other, as shown
in Fig. 7. In the left panel of Fig. 7 a general view of the GMI
sensors manufactured for three-channel GMI magnetometer
is shown.
3 Performance Figure 8 shows the output signals of
the GMI magnetometer for different values of the feedback
resistor R2. Without a feedback current the range of the
measured magnetic fields was small 3.5 mT (curve 1 in
Fig. 8). Using the feedback signal the measured range of the
magnetic fields can be expanded depending on the value of
resistor R2 up to 70 mT for R2 ¼ 720 V (curve 2), and up
to 250 mT for R2 ¼ 200 V (curve 3), respectively.
Figure 7 A photo of the off-diagonal GMI sensors (left panel) and
printed-circuit board electronics. The PCB electronics size is
20 mm  80 mm.
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Phys. Status Solidi A (2014) 5

Figure 10 The response of the GMI magnetometer to abrupt

Figure 8 The GMI magnetometer responses obtained using
different feedback resistors R2. In the absence of feedback (curve 1)
the maximal applied magnetic field was 3.5 mT. The original
nearly linear range of the GMI sensor was enlarged up to 250 mT
(curve 3) using the feedback loop connection with R2 ¼ 200 V.
The noise characteristics of the GMI magnetometer were
measured using the spectrum analyzer Ono Sokki CF-5210.
During the measurement the GMI sensor was placed inside
the permalloy magnetic shield. Figure 9 shows the noise
spectrum of the magnetometer in the frequency range up to
1000 Hz. The rms noise density at a frequency 300 Hz was
10 pT Hz1/2. However, at a frequency 3 Hz the noise
increases about an order, up to 80 pT Hz1/2. Note that the
equivalent noise density of the electronics does not exceed
3 pT Hz1/2 in the same frequency range.
We also measured the temporal drift of the GMI
magnetometer placed within a magnetic screen. Figure 10
shows the response of the magnetometer to the abrupt jumps
of the magnetic field with the amplitudes of 10 and
20 nT, as well as the corresponding temporal drift of the
magnetic field jumps of 10 and þ20 nT and its time drift during
1 h. The time drift is approximately 5 nT h1.
magnetometer during 1 h. The drift was estimated to be of
approximately 5 nT h1. The temperature characteristics of
the magnetometer are under investigation. The impact of a
large magnetic field on the magnetometer could lead to
a slight shift of the zero point of the order of 20–40 nT.
This effect was observed in the measurement without the
feedback current. The parameters of the off-diagonal GMI
magnetometer are given in Table 3.
4 Conclusions In this paper a highly sensitive GMI
sensor based on the off-diagonal GMI effect in Co-rich glass-
coated amorphous microwire with weak helical anisotropy is
designed and manufactured. It is shown that the optimal
choice of the amplitude of the high-frequency current, as
well as the amplitude of the dc bias current enables one
to obtain a sensor with good linearity of the transfer
characteristic and high steepness of the conversion, which
may exceed 300 V T1.
Using this GMI sensor a prototype of the GMI
magnetometer is developed. The magnetometer has a small
size, a sensitivity 10 pT Hz1/2 at frequencies above 300 Hz.
The dynamic range of the magnetometer exceeds 120 dB.
Both the one- and three-channel versions of the GMI

Table 3 Parameters of the GMI magnetometer.

parameter value

field direction uniaxial

magnetic field sensitivity
at 300 Hz 10 pT Hz1/2
at 3 Hz 80 pT Hz1/2
detection ranges 3.5, 70, 250 mT
transfer coefficient 1500, 75, 20 mV mT1
frequency response 0–1000 Hz
long-term stability 5 nT h1
Figure 9 Noise spectra of the GMI magnetometer measured within analog output 4.5 V
a magnetic shield. The calibration magnetic signals (70 nT/0.5 nT) power supply þ5.5 V  90 mA
were used at a frequency f ¼ 120 Hz.

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6 S. Gudoshnikov et al.: Highly sensitive magnetometer based on the off-diagonal GMI effect
magnetometer are manufactured. The reliability of the
magnetometer, its high sensitivity and wide dynamic range
have been confirmed experimentally. Nevertheless this
GMI magnetometer is slightly behind the other GMI and
orthogonal flux gate magnetometers on dynamic character-
istics [11] and noise characteristics [11, 23, 24]. The noise
parameters and the dynamic characteristics of the magnetom-
eter may be improved due to optimization of the sensor
excitation conditions and widening of the detection electron-
ics frequency bandwidth. The studies of the low-frequency
temperature offset drift [25] will be done in a future study.
Acknowledgements We thank A. Kozlov for useful
discussions and for long-term cooperation. This work was
supported by EU under FP7 “EM-safety” project, by Spanish
Ministry of Science and Innovation, MICINN under Project
MAT2010-18914, by the Basque Government under SAIOTEK-
2012 MEMFOMAG (S-PE12UN139) and SAIOTEK 13 PRO-
MAGMI (SA-2013/00035) and DURADMAG (SA-2013/00018)
projects. A. Zh. and V. Zh. wish to acknowledge support of the
Basque Government under Program of Mobility of the Investigat-
ing Personnel of the Department of Education, Universities and
Investigation (grants MV-2013-2-22 and MV-2013-2-23). Techni-
cal and human support provided by S. G. Iker (UPV/EHU,
MICINN, GV/EJ, ERDF and ESF) is gratefully acknowledged.
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