<£s.mi-(londu<2toi LPioducti, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Light DeteCtOr Planar Silicon Photo-Darlington Amplifier

2N5777-80
absolute maximum ratings: f25°C) (unless otherwise specified)
2N5777, 79 2N5778, 80 /x
Voltages—Dark Characteristics (L14D1.3) (L14D2.4)
Collector to Emitter VCEO 25 40 Volts
Collector to Base VCBO 25 40 Volts
Emitter to Base VEBO 8 12 Volts
1 i
Current DIMENSIONS WITHIN tMTINOJ |A '
JtOEC OUTUNC »0-»2 .
Light Current IL 250 250 mA NOTE 1: L«44 *«««tw if
Dissipation .070 OM -JJOttom Ito Holing jog
plani.Btl»n<i.Z90i>n4wi4M
Power Dissipation* PT 200 200 mW )Md a AMI. of .021 il H«I4. 1
h

Oil
Temperature »LL OIMEN. IN INCHES AND
AM orrrBvurr iiui r««
1
•* U "(f*C
Junction Temperature TOLE««NCEO.

Storage Temperature iStg

•*--6S°C to f 100°C
•Derate 2.67mW/"C above 2S°C ambient
electrical characteristics: (2 5°C) (ume5S otherwise specified)
2N5777, 78 2NS779. 80
Static Characteristics Min. Max. Min. Mix.

Light Current (VCE = 5V, H = SmW/cm1 **) IL 0.5 - 2.0 mA

Forward Current Transfer Ratio (VCE = 5V,
Ic = 2.0mA) hFE 1.0k - 2.0k
2N5777, 79 2N5778. 80
Min. Max. Min. Mix.

Dark Current (VCE = 12V, IB = 0) ID - 100 100

Co I lector-Emitter Breakdown Voltage
(l c = 10mA, H = 0) V (BR)CEO 25 - 40 Volts
Collector-Base Breakdown Voltage
, H =0) V(BR)CBO 25 - 40 Volts
Emitter-Base Breakdown Voltage
(IE= IOO^A.H = 0) V(BR)EBO 8 - 12 Volts
2IM5777-80
Dynamic Characteristics Min. Typ. Max.
Switching Speeds <VCE = 10V, I L = 10mA,
R L = 100 ohms, GaAs LED source)
Delay Time td 30 100 /jsec.
Rite Time 75 250 THE O.OB*" SQUARE PCUET
Storage Time 03 5 IS WIlrflNTHE SHADED AREA

Fall Time tf 45 150 Msec. THE ACriVE AREA IS

CENTERED WITHIN A O.OI5*
SQUARE ON THE PELLET
Collector-Base Capacitance (VCB = 10V, f = 1MHz) t'cb 7.6 10 pF SURFACE
DIMENSIONS IN INCHES
Emitter-Base Capacitance (V£B = 0.5V, f = 1MHz) ceb 10.5 - PF
Collector-Emitter Capacitance (VcEO = lov . PELLET LOCATION
f - 1MHz) ^'ceo 3.4 _
**H = Radiation Flux Density. Radiation source is an unfiltered
tungsten filament bulb at 2870°K color temperature.

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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