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Chapter 3

Bipolar Junction Transistor

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Electronic Devices and Circuit Theory
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Bipolar Junction Transistors


Ch.3 Summary

Transistor Construction
There are two types of transistors: pnp

pnp and npn

The terminals are labeled:


E – Emitter; B – Base; C - Collector

npn

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Ch.3 Summary
Transistor Operations
NPN Transistor PNP Transistor

Forward Reverse
bias bias Forward bias Reverse bias

*With the external sources, VEE and VCC

Emitter current is the sum of the collector I I I


E C B (1)
and base currents:

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Ch.3 Summary
Types of Configuration

(i) Common
Base

(iii) Common
(ii) Common Emitter
Collector

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Ch.3 Summary

Operating Regions
Active
Operating range of the amplifier.

Cutoff
The amplifier is basically off. There is
voltage, but little current.

Saturation
The amplifier is fully on. There is current,
but little voltage.

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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Ch.3 Summary
The BJT As A Switch
A switch is a two state device that is either open or closed.
A BJT acts as a switch when driven back and forth between
saturation and cutoff.

Electronics Fundamentals: A Systems Approach, Copyright © 2014 by Pearson Education, Inc.


First Edition, Thomas L. Floyd | David M. Buchla All Rights Reserved
Ch.3 Summary

Common-Emitter Characteristics

Base Characteristics

Collector Characteristics

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.3 Summary
Important Parameter
Relationship Between Currents:

I C  βI B (2) β = amplification factor

Emitter and collector currents:

IC  I E (3)

Base-emitter voltage:

VBE  0.7 V (for Silicon) (4)

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.3 Summary

Transistor Specification Sheet

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.3 Summary

Transistor Specification Sheet

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.3 Summary

Transistor Specification Sheet

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved

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