Philips Semiconductors Product specification

Triacs BT132 series D

logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT132- 500D 600D
bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V
control applications. These devices IT(RMS) RMS on-state current 1 1 A
are intended to be interfaced directly ITSM Non-repetitive peak on-state current 16 16 A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.

PINNING - TO92 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
1 main terminal 2
T2 T1
2 gate

3 main terminal 1
3 2 1 G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
VDRM Repetitive peak off-state - 5001 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; Tlead ≤51 ˚C - 1 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 16 A
t = 16.7 ms - 17.6 A
I2t I2t for fusing t = 10 ms - 1.28 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

January 1998 1 Rev 1.000

Philips Semiconductors Product specification

Triacs BT132 series D

logic level

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-lead Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
Rth j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.0 5 mA
T2+ G- - 2.5 5 mA
T2- G- - 2.5 5 mA
T2- G+ - 5.0 10 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.6 10 mA
T2+ G- - 4.5 15 mA
T2- G- - 1.2 10 mA
T2- G+ - 2.2 15 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 5 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs

January 1998 2 Rev 1.000

Philips Semiconductors Product specification

Triacs BT132 series D

logic level

Ptot / W BT132D
Tmb(max) / C IT(RMS) / A BT132D
1.4 41 1.2

1.2 =180 53 51 C
1
1

120
1 65
0.8
90
0.8 77
60 0.6
0.6 89
30
0.4
0.4 101

0.2
0.2 113

00 125 0
0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
0
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus lead temperature Tlead.

ITSM / A BT132D IT(RMS) / A BT132D

1000 3
IT ITSM
2.5
T time

Tj initial = 25 C max 24

100 1.5

dI T/dt limit 1

T2- G+ quadrant 0.5

10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tlead ≤ 51˚C.

ITSM / A BT136 VGT(Tj)

20 VGT(25 C) BT136
1.6
IT I TSM

time
1.4
15 T

Tj initial = 25 C max
1.2

10 1

0.8
5
0.6

0 0.4
10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

January 1998 3 Rev 1.000

Philips Semiconductors Product specification

Triacs BT132 series D

logic level

IGT(Tj) IT / A BT136
IGT(25 C) BT136D 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2

6
1.5

4
1

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-sp (K/W) BT134W

IL(25 C) TRIAC 100
3

2.5 10

2 unidirectional

1 bidirectional
1.5

P tp
D
1
0.1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-lead, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVD/dt (V/us)

1000
IH(25C) TRIAC
3

2.5
100
2

1.5

1 10

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.

January 1998 4 Rev 1.000

Philips Semiconductors Product specification

Triacs BT132 series D

logic level

MECHANICAL DATA

Dimensions in mm
2.54
Net Mass: 0.2 g

0.66
0.56 1.6

4.8 max 4.2 max

5.2 max

12.7 min

0.48 0.40
0.40 min
321
Fig.13. TO92 Variant; plastic envelope.

Notes
1. Epoxy meets UL94 V0 at 1/8".

January 1998 5 Rev 1.000

Philips Semiconductors Product specification

Triacs BT132 series D

logic level

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

January 1998 6 Rev 1.000

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