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Power MOSFET
–60V, 100mΩ, –4A, Single P-Channel www.onsemi.com
Features
• ON-resistance RDS(on)1=77mW(typ.)
• 4V Drive
• ESD Diode - Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Value Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --4 A
Drain Current (Pulse) IDP PW≤10ms, duty cycle≤1% --16 A
Power Dissipation PD When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
6 5 4
0.2
LOT No.
0.05
XE
1.6
2.8
TL
1 2 3
0.6
4 : Source 1, 2, 5, 6
0.9
5 : Drain
6 : Drain
CPH6
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet. 4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
CPH6354
P.G 50Ω S
ORDERING INFORMATION
Device Package Shipping memo
CPH6354-TL-H
CPH6 3,000pcs./reel Pb-Free and Halogen Free
CPH6354-TL-W
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2
CPH6354
ID -- VDS ID -- VGS
--4.0 --8
.0V VDS= --10V
0V
--3
--6.0
.
--4
--3.5 --7
.0V -10.0V
5V
--3.0 --6
.
Drain Current, ID -- A
Drain Current, ID -- A
--4
--2.5 --16 - --5
--2.0 --4
C
--1.0 --2
5°C
25° --25°
Ta=7
--0.5 --1
C
0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1 --2 --3 --4 --5 --6
Drain-to-Source Voltage, VDS -- V IT16614 Gate-to-Source Voltage, VGS -- V IT16615
RDS(on) -- VGS RDS(on) -- Ta
220 300
Ta=25°C
200
160 --2A
200 1A
140 = --
, ID
4.5V
Static Drain-to-Source = --
Static Drain-to-Source
120
150 VGS
100
A
= --1
80
.0 V, I D
100
= --4 A
60 VGS = --2
0V, I D
= --10.
40 50 VGS
20
0 0
0 --2 --4 --6 --8 --10 --12 --14 --16 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT16616 Ambient Temperature, Ta -- °C IT16617
10
gFS -- ID IS -- VSD
--10
VDS= --10V 7 VGS=0V
7
5
Forward Transconductance, gFS -- S
5
3
2
3
Source Current, IS -- A
C --1.0
2
5°
--2 7
= °C 5
Ta 75
1.0 3
C
--25°C
25°C
7 2
°C
5°
25
Ta=7
5 --0.1
7
3 5
2 3
2
0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Drain Current, ID -- A HD16618 Forward Diode Voltage, VSD -- V IT16619
SW Time -- ID Ciss, Coss, Crss -- VDS
100 1000
f=1MHz
7 td(off) 7 Ciss
5 5
Switching Time, SW Time -- ns
3 tf 3
Ciss, Coss, Crss -- pF
2 2
10 tr 100
7 td(on) 7
Coss
5 5
Crss
3 3
2 2
VDD= --30V
VGS= --10V
1.0 10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --10 --20 --30 --40 --50 --60
Drain Current, ID -- A IT16620 Drain-to-Source Voltage, VDS -- V IT16621
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CPH6354
VGS -- Qg SOA
--10 --100
VDS= --30V 7
5
--9 ID= --4A 3
IDP= --16A (PW≤10ms)
Gate-to-Source Voltage, VGS -- V
2
--8
10
--10 0m
Drain Current, ID -- A
--7 7
ID= --4A s
5
3
10 1m
--6 DC ms s
2 10
op 0m
--5 --1.0 er s
7
ati
5
on
--4 (T
3 a=
25
--3
2
Operation in this area °C
--0.1
)
7
is limited by RDS(on).
--2
5
3 Ta=25°C
--1 Single pulse
2
0 --0.01
When mounted on ceramic substrate (1500mm2×0.8mm)
0 2 4 6 8 10 12 14 16 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Total Gate Charge, Qg -- nC IT16622 Drain-to-Source Voltage, VDS -- V HD16623
PD -- Ta
1.8
When mounted on ceramic substrate
1.6 (1500mm2×0.8mm)
Power Dissipation, PD -- W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C HD16624
RθJA -- Pulse Time
100
7
5 Duty Cycle=0.5
3
Thermal Resistance, RθJA -- ºC/W
2 0.2
10 0.1
7
5 0.05
3
2 0.02
1.0 0.01
7
5
3
2
ulse
0.1 le P
7 Sing
5
3 When mounted on ceramic substrate
2 (1500mm2×0.8mm)
0.01
0.000001 2 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Pulse Time, PT -- s HD141028
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4
CPH6354
Outline Drawing Land Pattern Example
CPH6354-TL-H, CPH6354-TL-W
Mass (g) Unit
Unit: mm
0.015 mm
* For reference
0.6
1.4
2.4
0.95 0.95
Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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Mouser Electronics
Authorized Distributor
ON Semiconductor:
CPH6354-TL-H CPH6354-TL-W