Internatio! fer] Rectifier PD-9.827 IRFZ46 HEXFET® Power MOSFET © Dynamic dv/dt Rating © 175°C Operating Temperature D © Fast Switching © Ease of Paralleling © Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and fow package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Vpgs = 50V Rsion) = 0.0240 Ip = 50*A Parameter Continuous Drain Current, Vas @ 10V ‘Continuous Drain Current, Ves @ 10 V Pulsed Drain Current Power Dissi I 150 Ww. Linear Derating Factor { 1.0 Wee Ves Gate-to-Source Voltage #20) Vv Eas Single Pulse Avalanche Energy ® 100 md alat Peak Diode Recovery dvidt_ 45 Vins Ts ‘Operating Junction and “55 10 +175 Tra. ‘Storage Temperature Range c Soldering Temperature, for 10 seconds '300 (1.6mm from case) Mounting Torque. 6-32 or MS screw 10 lbfein (1.1. Nem) Thermal Resistance Parameter Min. Typ. Max. | Units Raic Junetion-to-Case = | = 1.0 Roos ‘Case-to-Sink, Flat, Greased Surface — | 050 = ecw Pasa Junetion-to-Ambient = = 62 1283 Cay SHEETS:IRFZ46 TGR Electrical Character ics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. [Units “Test Conditions Vienoss | Drain-to-Source Breakdown Votage | 50_| — | — | V | Vas-OV, lo= 250A ‘AViaqoss/ATy| Breakdown Voltage Temp. Cosfficient _— | 0.087] — | VO |Relerence to 25°C, lo= mA Rosten Static Drain-to-Source On-Resistance | — | — 0024] @ _|Vas=10V, In=32A © Nesiev Gato Threshold Volage 20, — | 40 | V_|Vps=Ves, lo= 508A os Forward Transconductanos 27 — | — | 8 |Vose25V, load2a @ Hoss Drain-to-Source Leakage Currant ws ee a a in Gale-t0-Souroe Forward Leakage == 100, ess20v Gate-to-Source Reverse Leakage — [= Fo [Was=-20V) Gs Total Gate Charge = [= 18 Tp=54A Ose Gate-to-Source Charge = [= Tet] ne | Vos=4av Qe Gate-to-Drain (‘Miler’) Charge [= | Vas=tOV See Fig. 6 and 13.@ tan) Turn-On Delay Time = a Rise Time = HE aon “Tumn-Off Delay Time = a Fall Time = F=0.430 See Figure 10 bo Internal Drain Inductance jas} — Bovey nH | from package ls Internal Source Inductance —|7s]- and center of die contact Cis Input Capacitance = [860 | — Ves=0V Cons ‘Output Capacitance = [960 —} PF Vpo=25V Cue Reverse Transter Capacitance = [eo | — f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Tye. | Max [ Unis “Test Conditions is Continuous Source Current Pesce eet toe MOSFET symbot 5 (Body Diode) a showing the ) Io Pulsod Source Current eer eres integral reverse Nf (Body Diode) © p-n junction diode, Is Vso Diode Forward Voltage = | | 25 | V_TyH26°G, lea54A, VesnOv © te Reverse Recovery Time = [66 | 99] ns | T=25°O, b=54A Or Reverse Recovery Charge = [0a7 [OST | Wo dilét-100AKis & [ton Forward Tum-On Time Intrinsio turn-on time neglegible (turn-on is dominated by LstLo} Notes: © Repetitive rating; pulse with limited by @ lepsB4A, dilat=250A/us, VoosViamoss. max. junction temperature (See Figure 11) Tyst75°C @ Pulse width < 300 us; duly cycle <2%. 1284Ip, Drain Current (Amps) |p, Drain Current (Amps) 20us PULSE WIOTH| To = 2590 wt 10 ot Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Te=25°C Vps ~ 25¥ 20Us PULSE WITH ASO? oa Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ip, Drain Current (Amps) Rosin Drain-to-Source On Resistance (Normalized) 1285 IRFZ46 [20ss PULSE wOTH Te = 17560 wt 100 wo Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C Orem 86g maa =a 0 ao Ad BOAO 100 120 140 160 180 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRFZ46 IR’ 2 a oy ‘Ov. f= tMHZ z Cys + Sgg. Cos S-CATED Ygg > 48¥ gs * Spa: Coe 2 a8 3 vee = Gov EY] 9. 35 __ 208 8 6 | S [ Pa Fa tt 2 ~ 8 | x = SI 5 mo] hy z 3 Cogs 2 g 7 3 1000 - 8 TY ‘ 8 rT el FOR TEST CIRCUIT RE 13 se 99S 20-80 a0 507 Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Isp, Reverse Drain Current (Amps) Vos = OV os Te 7 a Bs Vep, Source-o-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage Ip, Drain Current (Amps) Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY Fos (on) Freeasee 2 Scere since russe Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating AreaIQR IRFZ46 Ip, Drain Current (Amps) 50 80 oT 20 ssa Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs Case Temperature Thermal Response (Zajc) 'SINGLE PULSE (THERMAL AesPonse) aot 108 10) 10) A Vos >" PAL SHEETS Fig 10b. Switching Time Waveforms I] 2. Peak ty-Poy * Znje #1 sow * Zanse # Te 4 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1287IRFZ46 TOR| Vay eto obtain YDS roatifed las Rg 4) + wo Yoo = sorrow Sek «0 LNT TTI eor0 Fig 12a. Unclamped Inductive Test Circuit Eng, Single Pulse Energy (mu) L. \Varypss | t % Yoo mH Naot = 25 vs i a 50 1 109 125, 150 75 Starting Ty, Junction Temperature(°C) Oe Ee See Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Nos Curent Sampling Restore Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dvidt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing ~ See page 1509 Appendix C: Part Marking Information — See page 1516 International Appendix E: Optional Leadforms — See page 1525 ter] Rectifi er 1288