STTH6003CW ®

STTH6003CW Pb
Pb Free Plating Product
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-247AD/TO-3P
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS

Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics Anode
Base Backside
· Low Recovery Loss
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current

GENERAL DESCRIPTION
STTH6003CW using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
Symbol Parameter Test Conditions Values Unit
VR Maximum D.C. Reverse Voltage 300 V
VRRM Maximum Repetitive Reverse Voltage 300 V
TC=110°C, Per Diode 30 A
IF(AV) Average Forward Current
TC=110°C, Per Package 60 A
IF(RMS) RMS Forward Current TC=110°C, Per Diode 42 A
IFSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 480 A

PD Power Dissipation 156 W

TJ Junction Temperature -55to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Torque Module-to-Sink Recommended（M3） 1.1 N·m
Rth(J-C) Thermal Resistance Junction-to-Case, Per Diode 0.8 °C /W
Weight 6 g
ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VR=300V -- -- 10 µA
IRM Reverse Leakage Current
VR=300V, TJ=125°C -- -- 10 mA

IF=30A -- 1.25 1.8 V

VF Forward Voltage
IF=30A, TJ=125°C -- 1.12 -- V
trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 22 -- ns
trr Reverse Recovery Time VR=150V, IF=30A -- 35 -- ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 2.5 -- A
trr Reverse Recovery Time VR=150V, IF=30A -- 70 -- ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 6.8 -- A

Rev.05 Page 1/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 STTH6003CW ®

60 100
VR=150V
IF=60A
TJ =125°C
50
80

40
TJ =125°C
60

trr (ns)
IF (A)

30 IF=30A

40 IF=15A
20
TJ =25°C
20
10

0 0
0 0.3 0.9
0.6 1.2 1.5 1.8 0 200 400 600 800 1000
VF（V） diF/dt（A/μs）
Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt

24 600
VR=150V VR=150V
TJ =125°C TJ =125°C
20 500

16 400
IRRM (A)

Qrr (nc)

IF=60A
IF=60A
12 IF=30A 300 IF=30A
IF=15A IF=15A
8 200

4 100

0 0
0 200400 600 800 1000 0 200 400 600 800 1000
diF/dt（A/μs） diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt

1.2 10

1
1
0.8
ZthJC (K/W)

Duty
-1 0.5
0.6 10
Kf

0.2
trr 0.1
0.05
0.4 IRRM Single Pulse
-2
10
Qrr
0.2

0 10-3 -4
0 7525 50
100 125 150 10 10-3 10-2 10-1 1
TJ (°C) Rectangular Pulse Duration (seconds)
Fig5. Dynamic Parameters vs Junction Temperature Fig6. Transient Thermal Impedance

Rev.05 Page 2/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 STTH6003CW ®

IF trr

0.25 IRRM
Qrr
IRRM

dIF/dt 0.9 IRRM

Fig7. Diode Reverse Recovery Test Circuit and Waveform

Dimensions in Millimeters
Fig8. Package Outline

Rev.05 Page 3/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/