D44VH10(NPN),

D45VH10 (PNP)

Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and www.onsemi.com
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits. 15 A
Features COMPLEMENTARY SILICON
• Fast Switching POWER TRANSISTORS
• Key Parameters Specified @ 100°C 80 V, 83 W
• Low Collector−Emitter Saturation Voltage PNP NPN
• Complementary Pairs Simplify Circuit Designs COLLECTOR 2, 4 COLLECTOR 2, 4
• These Devices are Pb−Free and are RoHS Compliant*

1 1
MAXIMUM RATINGS BASE BASE
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc EMITTER 3 EMITTER 3

Collector−Emitter Voltage VCEV 100 Vdc 4

Emitter Base Voltage VEB 7.0 Vdc
Collector Current − Continuous IC 15 Adc TO−220
CASE 221A
Collector Current − Peak (Note 1) ICM 20 Adc
STYLE 1
Total Power Dissipation PD
@ TC = 25°C 83 W 1
Derate above 25°C 0.67 W/°C 2
3
Operating and Storage Junction TJ, Tstg −55 to 150 °C
Temperature Range MARKING DIAGRAM

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.
D4xVH10G
THERMAL CHARACTERISTICS AYWW
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RqJC 1.5 °C/W
Thermal Resistance, Junction to Ambient RqJA 62.5 °C/W
x = 4 or 5
Maximum Lead Temperature for Soldering TL 275 °C A = Assembly Location
Purposes: 1/8″ from Case for 5 Seconds Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

D44VH10G TO−220 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
D45VH10G TO−220 50 Units/Rail
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D. (Pb−Free)

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 8 D44VH/D
 D44VH10 (NPN), D45VH10 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc
(IC = 25 mAdc, IB = 0) 80 − −

Collector−Emitter Cutoff Current ICEV mAdc

(VCE = Rated VCEV, VBE(off) = 4.0 Vdc) − − 10
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100°C) − − 100
Emitter Base Cutoff Current IEBO mAdc
(VEB = 7.0 Vdc, IC = 0) − − 10

ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 2.0 Adc, VCE = 1.0 Vdc) 35 − −
(IC = 4.0 Adc, VCE = 1.0 Vdc) 20 − −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10 − − 0.4
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10 − − 1.0
(IC = 15 Adc, IB = 3.0 Adc, TC = 100°C)
D44VH10 − − 0.8
D45VH10 − − 1.5
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 8.0 Adc, IB = 0.4 Adc)
D44VH10 − − 1.2
(IC = 8.0 Adc, IB = 0.8 Adc)
D45VH10 − − 1.0
(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100°C)
D44VH10 − − 1.1
(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100°C)
D45VH10 − − 1.5
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product fT MHz
(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz) − 50 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
D44VH10 − 120 −
D45VH10 − 275 −

SWITCHING CHARACTERISTICS
Delay Time td − − 50 ns
Rise Time tr − − 250
(VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc)
Storage Time ts − − 700
Fall Time tf − − 90
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

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 D44VH10 (NPN), D45VH10 (PNP)

1000 1000
VCE = 1 V VCE = 1 V

25°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

125°C
125°C

−40°C 25°C
100 100 −40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44VH10 DC Current Gain Figure 2. D45VH10 DC Current Gain

1000 1000
VCE = 5 V VCE = 5 V
hFE, DC CURRENT GAIN

25°C hFE, DC CURRENT GAIN

125°C
125°C
25°C
100 −40°C 100 −40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44VH10 DC Current Gain Figure 4. D45VH10 DC Current Gain

0.40 0.6
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

0.35
0.5
0.30
−40°C 0.4
0.25 −40°C
0.20 0.3
25°C
0.15 25°C 125°C
0.2
0.10 125°C
0.1
0.05
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44VH10 ON−Voltage Figure 6. D45VH10 ON−Voltage

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 D44VH10 (NPN), D45VH10 (PNP)

1.2 1.4
VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

−40°C 1.2
1.0
−40°C
1.0
0.8
125°C
0.8
0.6 125°C
25°C 0.6
0.4 25°C
0.4

0.2 0.2

0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. D44VH10 ON−Voltage Figure 8. D45VH10 ON−Voltage

100 TA TC
IC, COLLECTOR CURRENT (AMPS)

PD, POWER DISSIPATION (WATTS)

50
30
20 1.0 ms
100 ms 3.0 60
10 10 ms
5.0
3.0 2.0 40
2.0 TC ≤ 70° C dc 1.0 ms TC
1.0 DUTY CYCLE ≤ 50%
0.5 1.0 20 TA
0.3 D44H/45H8
0.2 D44H/45H10,11
0.1 0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C)
Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating
Safe Operating Area

1.0
0.7
RESISTANCE (NORMALIZED)

D = 0.5
r(t), TRANSIENT THERMAL

0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 11. Thermal Response

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 D44VH10 (NPN), D45VH10 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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