11

(Saturated) MOSFET Small-Signal Model Transconductance

■ Concept: find an equivalent circuit which interrelates the incremental changes The small-signal drain current due to vgs is therefore given by
in iD, vGS, vDS, etc. for the MOSFET in saturation
id = gm vgs.

vGS = VGS + vgs , iD = ID + id -- we want to find id = (?) vgs

D iD = ID + id

G
We have the functional dependence of the total drain current in saturation: +
+
B VDS = 4 V
vgs _
iD = µn Cox (W/2L) (vGS - VTn ) (1 + λnvDS) = iD(vGS, vDS)
2
_
+ S
Solution: do a Taylor expansion around the DC operating point (also called the VGS = 3 V_
quiescent point or Q point) defined by the DC voltages Q(VGS, VDS):

2 600
∂i D 1 ∂ iD 2
iD = ID + ( v gs ) + --- ( v gs ) + …
∂v GS 2 ∂ v2 500
id vGS = VGS + vgs
Q GS
Q iD 400
Q vGS = VGS = 3 V
(µA) 300
If the small-signal voltage is really “small,” then we can neglect all everything past gm = id / vgs
the linear term -- 200

100
∂i D
iD = ID + ( v gs ) = I D + g m v gs
∂v GS
1 2 3 4 5 6
Q VDS (V)

where the partial derivative is defined as the transconductance, gm.

EE 105 Fall 1998 EE 105 Fall 1998

Lecture 11 Lecture 11
 Another View of gm Transconductance (cont.)

* Plot the drain current as a function of the gate-source voltage, so that ■ Evaluating the partial derivative:
the slope can be identified with the transconductance:

g m = µ n C ox  ----- ( V GS – V Tn ) ( 1 + λ n V DS )
W
L
D iD = ID + id

G
+ ■ In order to find a simple expression that highlights the dependence of gm on the
+ B VDS = 4 V
vgs _ DC drain current, we neglect the (usually) small error in writing:
_
+ S
VGS = 3 V_
2I D
2µ n C ox  ----- I D = --------------------------
W
gm =
 L V GS – V Tn
iD(vGS, VDS = 4 V)
600

500 For typical values (W/L) = 10, ID = 100 µA, and µnCox = 50 µAV-2 we find that
id
gm = id / vgs
iD 400 Q
(µA) 300
gm = 320 µAV-1 = 0.32 mS
200

100

1 2 3 4 5 6 vGS (V)
vGS = VGS = 3 V vGS = VGS + vgs

EE 105 Fall 1998 EE 105 Fall 1998

Lecture 11 Lecture 11
 (Partial) Small-Signal Circuit Model Output Conductance/Resistance

■ How do we make a circuit which expresses id = gm vgs ? Since the current is not ■ We can also find the change in drain current due to an increment in the drain-
across its “controlling” voltage, we need a voltage-controlled current source: source voltage:
∂i D
g o = ------------ = µ n C ox  ------ ( V GS – V Tn ) λ n ≅ λ n I D
W 2
∂v DS 2L
Q

gate id
The output resistance is the inverse of the output conductance
+ drain

vgs gmvgs
_ source 1 1
r o = ----- = ------------
_ go λn ID

The (partial) small-signal circuit model with ro added looks like:

id = gm vgs + (1/ro)vds

gate drain
+ +
id
gmvgs ro vds
vgs
_ source _

EE 105 Fall 1998 EE 105 Fall 1998

Lecture 11 Lecture 11
 ,,
MOSFET Capacitances in Saturation Complete Small-Signal Model
fringe electric
field lines
gate ■ All these capacitances are “patched” onto the small-signal circuit schematic
source drain
,,,
,,

,,,,
containing gm and ro ... gmb is open-circuited for EECS 105 since vbs = 0 V.
n+ n+
Csb qN (vGS) depletion
Cdb
overlap LD overlap LD region

Cgd id
gate
+ drain

vgs Cgs Cgb gmvgs gmbvbs ro

_ source
_

vbs Csb
Cdb
+
bulk

In saturation, the gate-source capacitance contains two terms, one due to the
channel charge’s dependence on vGS [(2/3)WLCox] and one due to the overlap of
gate and source (WCov, where Cov is the overlap capacitance in fF per µm of gate
width)
2
C gs = --- WLC ox + WC ov
3
In addition, there is the small but very important gate-drain capacitance (just the
overlap capacitance Cgd = Cov)

There are depletion capacitances between the drain and bulk (Cdb) and between
source and bulk (Csb). Finally, the extension of the gate over the field oxide leads to
a small gate-bulk capacitance Cgb.

EE 105 Fall 1998 EE 105 Fall 1998

Lecture 11 Lecture 11
 p-channel MOSFETs p-channel MOSFET Models

■ Structure is complementary to the n-channel MOSFET ■ DC drain current in the three operating regions: -ID > 0

,
,
■ In a CMOS technology, one or the other type of MOSFET is built into a well -- a
deep diffused region -- so that there are electrically isolated “bulk” regions in the
–ID = 0 A ( V SG ≤ – V T )
same substrate
– I D = µ p C ox ( W ⁄ L )[ VSG + V Tp – ( V SD ⁄ 2 ) ] ( 1 + λ p V SD )VSD ( V SG ≥ – V Tp, VSD ≤ VSG + V Tp )
2
– I D = µ p C ox ( W ⁄ ( 2L ) ) ( V SG + V T p ) ( 1 + λ p VSD ) ( V SG ≥ – V Tp, VSD ≥ VSG + V Tp )

,





 ,

,,,,,,,,,,

,,,,,,, ,, ,, ■ The threshold voltage with backgate effect is given by:

,

n-channel p-channel
V Tp = V TOp – γ p ( ( – V SB + 2φ n ) – 2φ n )
,,,,,,,,,,,

, ,,,,,,,
,
MOSFET MOSFET
,

Numerical values:

,
,
,

,,,,,,

,,,,,,,,,
,,,,, µpCox is a measured parameter. Typical value: µpCox = 25 µAV-2
,,,,,

A A
–1
0.1µmV
λ p ≈ --------------------------
L
(a)

common bulk contact for isolated bulk contact with

VTp = -0.7 to -1.0 V, which should be approximately -VTn for a well-controlled
all n-channel MOSFETs p-channel MOSFET CMOS process
(to ground or to the − supply) shorted to source
,,,,,,
,,,,
,,,,
,,,
,,
,,,
,,
,,,
,,

p+ n+ source n+ drain p+ drain p+ source n+

p-type substrate n well
(b)

EE 105 Fall 1998 EE 105 Fall 1998

Lecture 11 Lecture 11
 p-channel MOSFET small-signal model

■ the source is the highest potential and is located at the top of the schematic

source
+

Cgs gmvsg gmbvsb ro

vsg
Cgd
−id
vsb _ gate
drain

Cgb Csb
Cdb
_ bulk

EE 105 Fall 1998

Lecture 11