CHENMKO ENTERPRISE CO.

,LTD
CH3904PT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere

APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.

FEATURE SOT-23
* Small surface mounting type. (SOT-23)

.041 (1.05)
.033 (0.85)
* Low current (Max.=200mA).
* Suitable for high packing density.

.019 (0.50)
.018 (0.30)
* Low voltage (Max.=40V) . (1)

* High saturation current capability.

.082 (2.10)
.066 (1.70)
.119 (3.04)
.110 (2.80)
(3)
* Voltage controlled small signal switch.
(2)

CONSTRUCTION
* NPN Switching Transistor .055 (1.40) .028 (0.70)
.047 (1.20) .020 (0.50)
MARKING .103 (2.64)
.086 (2.20)
* s1A

.007 (0.177)
.002 (0.05)
3 .045 (1.15)
CIRCUIT
.033 (0.85)
1

2
Dimensions in inches and (millimeters) SOT-23

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 60 V
VCEO collector-emitter voltage open base − 40 V
VEBO emitter-base voltage open collector − 6 V
IC collector current DC − 200 mA
ICM peak collector current − 200 mA
IBM peak base current − 100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 330 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-4
 RATING CHARACTERISTIC CURVES ( CH3904PT )

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA
IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA
hFE DC current gain VCE = 1 V; note 1
IC = 0.1 mA 60 −
IC = 1 mA 80 −
IC = 10 mA 100 300
IC = 50 mA 60 −
IC = 100 mA 30 −
VCEsat collector-emitter saturation IC = 10 mA; IB = 1 mA − 200 mV
voltage IC = 50 mA; IB = 5 mA − 300 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV
IC = 50 mA; IB = 5 mA − 950 mV
Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF
Ce emitter capacitance IC = ic = 0; VBE = 500 mV; − 8 pF
f = 1 MHz
fT transition frequency IC = 10 mA; VCE = 20 V; 300 − MHz
f = 100 MHz
F noise Þgure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; − 5 dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
ton turn-on time ICon = 10 mA; IBon = 1 mA; − 65 ns
td delay time IBoff = −1 mA − 35 ns
tr rise time − 35 ns
toff turn-off time − 240 ns
ts storage time − 200 ns
tf fall time − 50 ns

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
 RATING CHARACTERISTIC CURVES ( CH3904PT )

Total power dissipation Ptot = f (TS) Saturation voltage IC = f (VBEsat, VCEsat)

hFE = 10

360
2
mW
mA
C
300 10 2
270
5
240
P tot

210 V CE V BE

180

150 10 1

120
5
90

60

30

0 10 0
0 15 30 45 60 75 90 105 120 °C 150 0 0.2 0.4 0.6 0.8 1.0 V 1.2
TS V BE sat , V CE sat

Permissible pulse load DC current gain hFE = f (I C)

Ptotmax / PtotDC = f (tp ) VCE = 10V, normalized

10 3 10 1
Ptot max tp
Ptot DC tp
D= h FE
T 5
T

10 2 D=
0 125 C
0.005
5 0.01
0.02 25 C
0.05 10 0
0.1
0.2 -55 C
10 1 0.5 5

10 0 -6 10 -1
10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 10
-1
5 10 0 5 10 1 mA 10 2 2
tp ΙC
 RATING CHARACTERISTIC CURVES ( CH3904PT )

Short-circuit forward current Open-circuit output admittance

transfer ratio h21e = f (IC) h22e = f (IC)
VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz
10 3 10 2
s
h 21e h 22e
5 5

10 2 10 1

5 5

10 1 10 0
-1 0 1 -1 0 1
10 5 10 mA 10 10 5 10 mA 10
ΙC ΙC

Delay time td = f (IC ) Storage time t stg = f (IC)

Rise time tr = f (IC)

10 3 10 3
ns ns
t r ,t d ts
tr 25 C
td h FE = 10 125 C h FE = 20
10

10 2 10 2
VCC = 3 V
h FE = 20
10
40 V
15 V
10 1 V BE = 2 V 10 1
0V

10 0 10 0
0
10
0
5 10 1 5 10 2 mA 10 3 10 5 10 1 5 10 2 mA 10 3
ΙC ΙC
 RATING CHARACTERISTIC CURVES ( CH3904PT )

Fall time tf = f (IC) Rise time tr = f (IC)

10 3 10 3
ns ns
tf tr
25 C
125 C 25 C
VCC = 40 V
VCC = 40 V
125 C h FE = 10
10 2 10 2

h FE = 20

h FE = 10
10 1 10 1

10 0 10 0
0
10
0
5 10 1 5 10 2 mA 10 3 10 5 10 1 5 10 2 mA 10 3
ΙC ΙC

Input impedance Open-circuit reverse voltage

h11e = f (IC) transfer ratio h12e = f (I C)
VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz

10 2 10 -3

k h 12e
h 11e

10 1

5
10 -4

10 0 5

10 -1 10 -5 -1 0 1
10 -1 5 10 0 mA 10 1 10 5 10 mA 10
ΙC ΙC
 RATING CHARACTERISTIC CURVES ( CH3904PT )

Test circuits

Delay and rise time

+3.0 V

275
300 ns D = 2%
+10.9 V
10 k
0 C
-0.5 V
<4.0 pF
<1.0 ns

Storage and fall time

+3.0 V

10 < t 1 < 500 s

t1 275
D = 2%
+10.9 V
10 k
0 C

-9.1 V <4.0 pF
1N916

<1.0 ns