Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability k a
• High thermal cycling performance 1 2 IF(AV) = 8 A
• Low thermal resistance
IRRM ≤ 0.2 A
trr ≤ 25 ns

GENERAL DESCRIPTION PINNING SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
tab
intended for use as output rectifiers
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYW29E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.
1 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYW29E -150 -200
VRRM Peak repetitive reverse - 150 200 V
voltage
VRWM Working peak reverse - 150 200 V
voltage
VR Continuous reverse voltage - 150 200 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied VRRM(max)
IRRM Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
IRSM Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
Tj Operating junction - 150 ˚C
temperature
Tstg Storage temperature - 40 150 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VC Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ

November 1998 1 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 2.7 K/W
to mounting base
Rth j-a Thermal resistance junction in free air - 60 - K/W
to ambient

ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
IR Reverse current VR = VRWM - 2 10 µA
VR = VRWM; Tj = 100˚C - 0.2 0.6 mA
Qrr Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 4 11 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs 20 25 ns
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs - 1 - V

November 1998 2 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

dI
I F 0.5A
F
dt
IF

t
rr 0A

time
I rec = 0.25A

IR
Q 10% 100%
s
trr2
I
R I
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm Fig.4. Definition of trr2

I PF / W BYW29 Tmb(max) / C
F 12 108
Vo = 0.791 V
D = 1.0
Rs = 0.013 Ohms
10 115

0.5 122
8

time 0.2
6 129
VF 0.1
4 136
tp tp
I D=
T
V 2 143
fr
t
VF T
0 150
0 2 4 6 8 10 12
time IF(AV) / A

Fig.2. Definition of Vfr Fig.5. Maximum forward dissipation PF = f(IF(AV));

square current waveform where IF(AV) =IF(RMS) x √D.

R PF / W BYW29 Tmb(max) / C
8 122
Vo = 0.791 V a = 1.57
Rs = 0.013 Ohms
7 125.5
1.9
2.2
6 129
D.U.T. 5
2.8
132.5
Voltage Pulse Source 4
4 136

3 139.5
Current
shunt 2 143
to ’scope
1 146.5

0 150
0 1 2 3 4 5 6 7 8
IF(AV) / A

Fig.3. Circuit schematic for trr2 Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).

November 1998 3 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

trr / ns
1000 100 Qs / nC

IF=10A
5A
IF=10A 2A
100 1A

10
IF=1A

10

1 1.0
1 10 100 1.0 10 100
dIF/dt (A/us) -dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C. Fig.10. Maximum Qs at Tj = 25 ˚C.

Irrm / A Transient thermal impedance, Zth j-mb (K/W)

10 10

IF=10A 1
1
IF=1A
0.1

0.1
0.01 PD tp tp
D=
T

T t
0.01 0.001
1 10 100 1us 10us 100us 1ms 10ms 100ms 1s 10s
-dIF/dt (A/us) pulse width, tp (s) PBYL1025

Fig.8. Maximum Irrm at Tj = 25 ˚C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp).

IF / A BYW29
30
Tj=150 C
Tj=25 C

20

typ max
10

0
0 0.5 1 1.5 2
VF / V

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter Tj

November 1998 4 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max
3,0 max
not tinned

3,0
13,5
min
1,3
max 1 2
(2x) 0,9 max (2x)
0,6
5,08 2,4

Fig.12. TO220AC; pin 1 connected to mounting base.

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

November 1998 5 Rev 1.300

Philips Semiconductors Product specification

Rectifier diodes BYW29E series

ultrafast, rugged

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1998 6 Rev 1.300