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SEMICONDUCTOR TECHNICAL DATA by 2N5550/D

  

NPN Silicon


*Motorola Preferred Device

COLLECTOR
3

2
BASE

1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 140 160 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO 160 180 Vdc

Emitter – Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5550 140 —
2N5551 160 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0 ) 2N5550 160 —
2N5551 180 —
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5550 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5551 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551 — 50
Emitter Cutoff Current IEBO — 50 nAdc
(VEB = 4.0 Vdc, IC = 0)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 60 —
2N5551 80 —

(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 60 250

2N5551 80 250

(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 20 —

2N5551 30 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 0.15

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 0.25

2N5551 — 0.20
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 1.0

(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 1.2

2N5551 — 1.0

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT 100 300 MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance Cobo — 6.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 — 30
2N5551 — 20
Small–Signal Current Gain hfe 50 200 —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure NF dB
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, 2N5550 — 10
f = 1.0 kHz) 2N5551 — 8.0

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
500
300 VCE = 1.0 V
TJ = 125°C
h FE, DC CURRENT GAIN 200 VCE = 5.0 V
25°C
100
– 55°C
50
30
20

10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 

101
VCE = 30 V
100

IC, COLLECTOR CURRENT ( µA)

10–1 TJ = 125°C
IC = ICES

10–2 75°C

10–3 REVERSE FORWARD

25°C
10–4

10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut–Off Region

1.0 2.5
TJ = 25°C

θV, TEMPERATURE COEFFICIENT (mV/ °C)

2.0 TJ = – 55°C to +135°C
0.8 1.5
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10 1.0

0.6 0.5 qVC for VCE(sat)
0
0.4 – 0.5
– 1.0
qVB for VBE(sat)
0.2 – 1.5
VCE(sat) @ IC/IB = 10 – 2.0
0 – 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages Figure 5. Temperature Coefficients

100
70 TJ = 25°C
50
30
VBB VCC
C, CAPACITANCE (pF)

10.2 V
– 8.8 V 30 V 20
Vin
100 3.0 k RC 10
0.25 µF Cibo
10 µs RB 7.0
INPUT PULSE Vout 5.0
5.1 k
3.0 Cobo
tr, tf ≤ 10 ns Vin 100 1N914
DUTY CYCLE = 1.0% 2.0

1.0
Values Shown are for IC @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit Figure 7. Capacitances

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
1000 5000
IC/IB = 10 tf @ VCC = 120 V IC/IB = 10
3000
500 TJ = 25°C TJ = 25°C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
t, TIME (ns)

t, TIME (ns)
100 500

300 ts @ VCC = 120 V

50 td @ VEB(off) = 1.0 V
200
30 VCC = 120 V
20 100

10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–On Time Figure 9. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data


◊ 2N5550/D