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Tic116 Series Silicon Controlled Rectifiers
Tic116 Series Silicon Controlled Rectifiers
A 2
● Max IGT of 20 mA
G 3
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC116D 400
TIC116M 600
Repetitive peak off-state voltage VDRM V
TIC116S 700
TIC116N 800
TIC116D 400
TIC116M 600
Repetitive peak reverse voltage VRRM V
TIC116S 700
TIC116N 800
Continuous on-state current at (or below) 70°C case temperature (see Note 1) IT(RMS) 8 A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
IT(AV) 5 A
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3) ITM 80 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 W
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
APRIL 1971 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
14
12
0° 180°
Φ 10
10 Conduction
Continuous DC Angle
8
6
1
4 Φ = 180°
0 0·1
30 40 50 60 70 80 90 100 110 0·1 1 10 100
TC - Case Temperature - °C IT - Continuous On-State Current - A
Figure 1. Figure 2.
10 1
TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3. Figure 4.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
VAA =12 V
RL = 100 Ω
IGT - Gate Trigger Current - mA
0·8
10
0·6
0·4
VAA =12 V
RL = 100 Ω
0·2
tp(g) ≥ 20 µs
1 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 5. Figure 6.
2 Duty Cycle ≤ 2 %
IH - Holding Current - mA
1·5
10
0·5
1 0
-50 -25 0 25 50 75 100 125 0·1 1 10 100
TC - Case Temperature - °C ITM - Peak On-State Current - A
Figure 7. Figure 8.
APRIL 1971 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
6,6
6,0
15,32
14,55
14,1
1,47 12,7
0,97 1,07
0,66
1 2 3
2,74 0,64
2,34 0,41
5,28 2,90
4,68 2,40
NOTE A: The centre pin is in electrical contact with the mounting tab.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5