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Effects of thickness on mechanical properties of conducting polythiophene


films

Article  in  Journal of Materials Science Letters · May 2002


DOI: 10.1023/A:1015737106002

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J O U R N A L O F M A T E R I A L S S C I E N C E L E T T E R S 2 1, 2 0 0 2, 715 – 717

Effects of thickness on mechanical properties of conducting


polythiophene films
XI-SHU WANG, XI-QIAO FENG
Department of Engineering Mechanics, Tsinghua University, Beijing 100084, People’s Republic of China
E-mail: xshwang@mail.tsinghua.edu.cn

Owing to the rapid development of conducting poly- measure the displacement of a film specimen under
mers [1, 2], it has become possible to control the electri- strain.
cal property of polymers over the range from insulation When subjected to an externally applied force, a
to high conductivity. Some polymeric materials have polythiophene film may undergo a considerable shape
successively been synthesized with conductivity simi- change, especially in the longitudinal direction due
lar to such metals as copper [3]. Polymers and electrical to the large ratio of the length L to the width W
conductivity are no longer mutually exclusive. In addi- (L/W ≥ 10). The shape change of a film can be detected
tion, conducting polymers possess some other superior by the ESPI method. Several tensile stress-strain curves
properties such as low mass density, ease of fabrica- of polythiophene films of different thickness are shown
tion, flexibility in design, and resistance to corrosion. in Fig. 1. Following the linear elastic deformation, plas-
Therefore, they can be used in various applications as tic deformation occurs at a threshold stress, referred to
substitutes of metals [4]. The promise of combining as the yield stress. During plastic deformation, an ev-
these properties with good electrical properties in poly- ident strain-hardening curve is observed, that is, the
mers has prompted extensive interest in the last two applied stress has to be increased continuously for fur-
decades. However, most of the previously synthesized ther development of plastic strain. The maximum stress
conducting polymers are brittle, insoluble, intractable, that a polythiophene film of thickness less than 10 µm
and often decomposed before melting [5]. The prepa- can bear is similar to that of an aluminum thin film.
ration of conducting polymers with high strength and It can be seen from Fig. 1 that the strength of a poly-
good chemical stability remains still a great challenge. thiophene film exhibits an evident dependence upon its
To date, there is still a lack of investigation on the re- thickness. As the film thickness increases, the tensile
lationship between the macroscopic properties and mi- strength decreases. This size effect of tensile strength is
crostructures of conducting polymer films. Recently, especially evident when the film thickness is less than
polythiophene thin films with high conductivity and 10 µm. However, the film strengths approach to a con-
chemical stability have been synthesized by an electro- stant value when the thickness is larger than 15 µm. No
chemical method [6, 7]. The mechanical properties of evident difference has been observed in the yield stress
such kinds of films are experimentally investigated in among films when their thickness is larger than about
this paper by using an electronic speckle pattern inter- 15 µm. In our measurement, films of thickness 4 µm
ferometry method and the SEM technique. Significant possess the highest strength. The physical micromech-
effects of thickness on the strength and Young’s mod- anisms of such a size effect will be analyzed below.
ulus of films are found. The elastic modulus of a film can also be obtained by
The conducting polythiophene films used in this the same experimental system, from which both strain
study were synthesized in a one-compartment cell with
the use of an EG&G potentiostat model 283 under com-
puter control [6, 7]. Two AISI 304 stainless steel sheets
with a spacing of 5 mm are used as the working and
counter electrodes. The anodic potential is referred to
the third electrode made of Ag/AgC1. Polythiophene
films were yielded by electrolysis of 0.03 M thiophene
in freshly distilled boron trifluoride diethyl etherate at
a constant potential of 1.3 V. The film thickness was
controlled by adjusting the total charge passed in the
cell. Thus, polythiophene films with different thick-
nesses ranging from one to hundreds of microns were
successively grown/deposited on the base of a stain-
less steel plate by controlling the strength of the elec-
tric current and the synthesis time. These films behave
like metal thin films and can be cut easily into vari-
ous shapes of specimens. An electronic speckle pat- Figure 1 Stress-strain curves of polythiophene films of different
tern interferometry (ESPI) method [8] was used to thickness.

0261–8028 
C 2002 Kluwer Academic Publishers 715
film includes two regions significantly distinct in mi-
crostructure. A thin film of thickness about 3–4 µm
has a perfect microstructure with few microdefects. As
the thickness increases, more and more defects (voids
and large molecule agglomerates) appear, causing the
degradation and incompact microstructure of the films.
The nucleation and growth mechanism of such a
film can be interpreted by the models in Ref. [9] and
the references therein. The early stage of the electro-
chemical deposition process plays a significant role in
the microstructural morphology and mechanical prop-
erties of the films. In this stage, the polythiophene
molecules ([C4 –H4 –S]n ) deposited on the steel sheet
Figure 2 Relationship between Young’s modulus and film thickness. are relatively small (n is small) and they form in a uni-
form order like crystals. With the further growth of the
and stress can be measured with a satisfactory accu- film, a three-dimensional deposition of bigger polythio-
racy. The Young’s modulus E of conducting polythio- phene molecules leads to the incompact microstructure
phene films is plotted in Fig. 2 with respect to the film with profuse defects. At the same time, some salt an-
thickness. It is seen that the Young’s modulus decreases ionics can be dissociated, as can also be observed in
rapidly as the thickness increases when the latter is less SEM images.
than about 10 µm, but approaches to a constant value As a consequence of the synthesis process, the
for larger thickness. Therefore, the dependence rela- microstructure of a conducting polythiophene film
tionship of the Young’s modulus upon the thickness changes with the increase in the thickness. The hetero-
includes two regimes, a constant regime for thickness geneous microstructure leads to some residual stresses
larger than about 10 µm, and a decreasing regime with at the micro scale before and during the desiccation
smaller thickness. The main reason of this phenomenon process of films. Microcracks caused by the hetero-
seems to be associated with the growth mechanisms of geneity and the residual stresses can be clearly seen in
the polythiophene films during electrochemical synthe- SEM images (Fig. 4). However, few microcracks have
sis. When a film is very thin (e.g., less than 3 µm), been observed in films thinner than 4–5 µm. Microde-
the polythiophene grows in a stable manner on the fects seem to be the main reason of the size effects on
base layer of stainless steel, yielding a rather homo- the mechanical properties (e.g., strength and stiffness)
geneous and compact film with few microdefects. With of polythiophene thin films under tension. Quantitative
its further development, however, more and more big investigation on the property-microstructure relation of
molecule groups from, causing numerous distributed films can be conducted by means of micromechanics
microdefects such as micro-cracks and micro-voids in theory, but is omitted in this letter.
the whole surface of the film, which can be observed in In summary, the strength and elastic modulus of con-
SEM images. ducting polythiophene films synthesized by an electro-
To gain a better understanding of the thickness ef- chemical method have been investigated experimen-
fects on the mechanical properties of the films, it is tally by the ESPI and SEM techniques. Evident effects
significant to observe their microstructures. The SEM of film thickness on mechanical properties have been
image in Fig. 3 shows a part of a fracture surface along found. High strength and stiffness can be achieved only
the thickness direction of a film after a tensile frac- in polythiophene films thinner than 10 µm, because the
ture test, observed at a certain angle from the fracture heterogeneous microstructure causes profuse microde-
surface. It is clearly seen that the cross section of the fects and residual stresses in thicker films. To obtain

Figure 4 SEM image of microcracks in a conducting polythiophene


Figure 3 SEM image of a fracture surface of a polythiophene film. film.

716
polythiophene films thicker than 10 µm and of higher 2. W . D . G I L L , T . C . C L A R K E and G . B . S T R E E T , Appl. Phys.
quality, the synthesis method needs to be improved to Commun. 2 (1982) 211.
3. S . N . B H A D A N I , S . K . S E N G U P T A and J . P R A S A D ,
yield a stable growth of films.
J. Appl. Polym. Sci. 47 (1993) 1215.
4. G . W E G N E R , Angew Chem. Int. Ed. Engl. 20 (1981) 361.
Acknowledgments 5. S . L I , C . W . M A C O S C O and H . S . W H I T E , Science 259 (1993)
The authors wish to thank Prof. Gaoquan Shi’s group 957.
6. G . S H I , C . L I and Y . L I A N G , Adv. Mater. 11 (1999) 1145.
for their help, and gratefully acknowledge the support 7. G . S H I , S . J I N , G . X U E and C . L I , Science 267 (1995)
from the Basic-Research Foundation of Tsinghua Uni- 994.
versity (JC2000057), and the National Natural Science 8. R . D . R U I Z , G . H . K A U F M A N N , O . M ö L L E R and G . E .
Foundation (19891180). G A L I Z Z I , Optics Lasers Eng. 32 (2000) 473.
9. K . K O N T T U R I , M . P O H J A K A L L I O , G . S U N D H O L M and
E . V I E I L , J. Electroanaly. Chem. 384 (1995) 67.
References
1. K . G U R U N A T H A N , A . V . M U R U G A N , R . M A R I M U T H U ,
U . P . M U L I K and D . P . A M A L N E R K A R , Mat. Chem. Phys. Received 10 September 2001
61 (1999) 173. and accepted 14 January 2002

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