BYV54V

® BYV541V

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

n SUITED FOR SMPS K2 A2 A2 K1

n VERY LOW FORWARD LOSSES

n NEGLIGIBLE SWITCHING LOSSES
n HIGH SURGE CURRENT CAPABILITY K1

( s ) A1 K2 A1

n HIGH AVALANCHE ENERGY CAPABILITY

INSULATED : t
BYV541V-200
c
BYV54V-200

u
n
Insulating voltage = 2500 VRMS
Capacitance = 45 pF
o d )
P r ( s
t e c t
l e d u
DESCRIPTION
s o r o
O b
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
e P
Packaged in ISOTOPTM this device is intended for
- l e t
s )
use in low voltage, high frequency inverters, free
o
wheeling and polarity protection applications.
(
ISOTOP

c t b s (Plastic)

d u - O
r o
ABSOLUTE MAXIMUM RATINGS
s )
Symbol
e P c t ( Parameter Value Unit

l e t
IF(RMS)
d u
RMS forward current Per diode 100 A

s oIF(AV)
r o
Average forward current δ = 0.5 50 A

O b IFSM
e P Tc=90°C Per diode
1000 A

l e t Surge non repetitive forward current tp=10ms Per diode

sinusoidal

s oTstg
Tj
Storage and junction temperature range - 40 to +
150
°C
°C

O b - 40 to + 150

Symbol Parameter BYV54V / BYV541V Unit

VRRM Repetitive peak reverse voltage 200 V

ISOTOP is a trademark of STMicroelectronics.

May 2000 - Ed : 2E 1/5

 BYV54V / BYV541V
THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c) Junction to case Per diode 1.2 °C/W

Total 0.85

Rth (c) Coupling 0.1 °C/W

When the diodes 1 and 2 are used simultaneously :

Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

( s )
ELECTRICAL CHARACTERISTICS (Per diode)
c t
STATIC CHARACTERISTICS
d u
Symbol Test Conditions
r o s ) Min. Typ. Max. Unit

IR *
e P c t ( 50 µA
Tj = 25°C

l e t
VR = VRRM

d u
Tj = 100°C
s o r o 5 mA

VF ** Tj = 125°C
O b IF = 50 A
e P 0.85 V

- l e t
Tj = 125°C

( s ) o
IF = 100 A 1.00

c
Tj = 25°C t b s IF = 100 A 1.15

Pulse test :
d u - O
r o
* tp = 5 ms, duty cycle < 2 %

s )
e P c t (
** tp = 380 µs, duty cycle < 2 %

l e t d u
RECOVERY CHARACTERISTICS

s o r o
O bSymbol

e P Test Conditions Min. Typ. Max. Unit

trr
l e t Tj = 25°C IF = 0.5A
IR = 1A
Irr = 0.25A 40 ns

s o
O b IF = 1A
VR = 30V
dIF/dt = -50A/µs 60

tfr Tj = 25°C IF = 1A tr = 5 ns 10 ns
VFR = 1.1 x VF

VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V

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 BYV54V / BYV541V

Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.

P F(av)(W) IM(A)
45 1000
40 =1 T
=0.1 =0.2 =0.5
P=30W
35 800
I
=0.05 M
30
600 =tp/T
25 tp

20 P=15W
T 400
15
10
( s ) P=45W

5 I F(av)(A) =tp/T
c t tp
200 P=60W

0
0 5 10 15 20 25 30 35
d
40u 45 50
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

r o s )
Fig.3 : Forward voltage drop versus forward
e P c t ( Fig.4 : Relative variation of thermal impedance
current (maximum values).

l e t d u junction to case versus pulse duration.

VFM(V)
s o r o 1.0
K
Zth(j-c) (tp. )
1.8

1.6
O b e P K =
Rth(j-c)

1.4
Tj=125 oC

- l e t =0.5
1.2

( s ) o
0.5
=0.2
1.0

c t b s =0.1
0.8

0.6
d u - O T

0.4
r o s )
0.2 Single pulse

0.2

e P c t ( IFM(A)

t
=tp/T tp
tp(s)
u
0.0
0.1

o
1

l e o d
10 100 500
1.0E-03 1.0E-02 1.0E-01 1.0E+00

b s P r
Fig.5 : Non repetitive surge peak forward current Fig.6 : Average current versus ambient

O e
versus overload duration.
t
temperature. (duty cycle : 0.5)

o l e
IM(A) I F(av)(A)

s
400

b
60

O 50 Rth(j-a)=Rth(j-c)
300
40

200 Tc=25 oC 30
=0.5
T
Tc=50 o C 20
100 IM
Tc=90 o C
10
t
=0.5
t(s) =tp/T tp Tamb( o C)
0 0
0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160

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 BYV54V / BYV541V

Fig.7 : Junction capacitance versus reverse Fig.8 : Recovery charges versus dIF/dt.
voltage applied (Typical values).

C(pF) QRR(nC)
42 0 1 20
F=1Mhz Tj=25 oC 11 0 90%CONFIDENCE
40 0
1 00 IF=IF(av)
38 0 Tj=100 OC
90
36 0 80
34 0 70
60
32 0 Tj=25 O C
50
30 0 40
28 0 30
20
( s )
26 0
24 0
VR(V)
c t
10
0
dIF/dt(A/us)
1 10 1 00 20 0

d u 1 10 1 00

Fig.9 : Peak reverse current versus dIF/dt.

r o s )
Fig.10 : Dynamic parameters versus junction

e P t (
temperature.
c
l e t d u
4.0
IRM(A)

s o r o 1.50
QRR;IRM[Tj]/QRR;IRM[Tj=125 oC]

b P
90%CONFIDENCE
3.6
IF=IF(av)
3.2
2.8
- O Tj=100 OC

e t e 1.25

2.4

s ) o l 1.00
IRM
2.0
1.6
c t ( b s 0.75
QRR

1.2
d u - O 0.50

o
Tj=25 O C
0.8
0.4
P r ( s ) dIF/dt(A/us)
0.25
Tj( oC)
0.0
1
t e
20
c t 10 1 00
0.00
0 25 50 75 100 125 150

l e d u
s o r o
O b e P
l e t
s o
O b

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 BYV54V / BYV541V

PACKAGE MECHANICAL DATA

ISOTOP

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081

( s ) D 37.80 38.20 1.488 1.504

c t D1
E
31.50 31.70
25.15 25.50
1.240 1.248
0.990 1.004

d u E1
E2
23.85 24.15
24.80 typ.
0.939 0.951
0.976 typ.

r o s ) G 14.90 15.10 0.587 0.594

e P c t ( G1
G2
12.60 12.80
3.50 4.30
0.496 0.504
0.138 0.169

l e t d u F
F1
4.10
4.60
4.30
5.00
0.161 0.169
0.181 0.197

s o r o P 4.00 4.30 0.157 0.69

O b e P P1
S
4.00 4.40
30.10 30.30
0.157 0.173
1.185 1.193

- l e t
n Marking : Type number
( s ) o
n Cooling method : C
Weight : 27 g
c t b s
u
n

d
Epoxy meets UL94, V0
- O
r o s )
e P c t (
l e t d u
s o r o
O b e P
l e t
s o
O b
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
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