Optics & Laser Technology 142 (2021) 107177

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Optics and Laser Technology

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Optical mode conversion based on silicon-on-insulator material Ψ-junction

coupler and multimode interferometer
Dao Duy Tu a, Ho Duc Tam Linh a, b, Vuong Quang Phuoc a, b, Dao Duy Thang c,
Truong Cao Dung d, Nguyen Tan Hung b, e
a
University of Sciences, Hue University, Viet Nam
b
University of Danang - Advanced Institute of Science and Technology, Danang, Viet Nam
c
Sensor Systems, Silicon Austria Labs GmbH (SAL), Europastraße 12, 9524 Villach, Austria
d
Posts and Telecommunications Institute of Technology, Hanoi, Viet Nam
e
University of Danang - University of Science and Technology, Danang, Viet Nam

A R T I C L E I N F O A B S T R A C T

Keywords: In mode-division multiplexing (MDM) networks, converting modes back and forth between a higher-order mode
Silicon-on-insulator material and a lower-order mode plays a vital role in improving network capacity and flexibility. This paper presents a
Photonics integrated circuit spatial optical mode conversion supporting three modes based on two Ψ-junction couplers and two multi-mode
Planar lightwave circuits
interference couplers (MMIs). The proposed device can arbitrarily convert a TEi mode to a TEj mode (where i, j =
Multimode interferometer and Ψ-junction
waveguide
0, 1, 2) by setting three phase-shifters at 0 or 180 degrees, which are introduced at the Ψ-junction and MMI
couplers. Through numerical simulations using the spatial three-dimensions beam propagation method (3D-
BPM), the mode converter shows a high conversion efficiency with the insertion loss smaller than 0.2 dB and the
crosstalk below − 20 dB at the center wavelength of 1.55 μm. The device works effectively in C band, partially in
S and L bands within a wideband up to 80 nm. We believe that the proposed device would be a potential platform
for applications in MDM networks and photonic integrated circuit systems.

1. Introduction
Wavelength division multiplexing (WDM) technology has played an
essential role in increasing the channel capacity for optical transmission
systems in the past decades. However, this technology could reach the
ultimate limitation because of some crucial issues such as the limitation
of wavelength resources of telecommunication windows, especially the
third windows of 1550 nm band, and problems relating to nonlinear
effects [1]. Several methods are aiming to overcome these problems. For
example, spatial division multiplexing (SDM), mode division multi­
plexing (MDM), multi-carrier, and super-channel techniques have been
developed by incorporating with WDM technique to enhance the total
channel capacity in optical networks [2,3]. Among those techniques,
MDM has been recently emerged as an efficient technique for channel
multiplexing by using orthogonal eigenmodes as independently infor­
mation carriers [4]. Notably, the total capacity could be multi-fold
increased by combining MDM with WDM to form hybrid WDM-MDM
systems [5–7].
Multi-mode light sources are essential components in MDM systems
where multi-mode semiconductor lasers are used to radiate different
mode lights directly [8]. However, technical difficulties and cost are the
main challenges to realize multi-mode laser sources. An alternative, yet
more straightforward, technique to generate multi-mode lights is to use
mode-order converters optically converting a fundamental mode to
higher-order modes. Essential requirements for such mode-order con­
verters to be applicable in practical systems are the reconfigurability in
mode-order conversion, integration, and compatibility with semi­
conductor laser [9,10] as well as optical fibers [11–13].
Different mode conversions have been proposed using waveguide
structures such as taper [14,15], circular waveguides [16–19], Bragg
grating [20,21], and Mach–Zehnder interferometer [22]. In particular, a
mode converter based on a tapered core and four bi-pyramids was used
to convert LP01 mode to LP02 mode and vice versa [14]. For example,
mode conversions from LP01 to LP0m (m = 2, 3, 4, 5, 6, 7) can be realized
by changing the length parameters of the tapered section[15]. X. Li et al.
demonstrated a high-power orthogonal mode converter with the circu­
lar shape to convert mode from mode TE11 to mode TE10 [19].
Furthermore, a periodic Bragg grating was also proposed to switch TE0
mode to TE1 mode [20]. The Mach–Zehnder interferometer, combined
with a phase shifter, was used to create a mode exchange between mode

E-mail addresses: hdtlinh@hueuni.edu.vn (H.D. Tam Linh), hung.nguyen@dut.udn.vn (N.T. Hung).

https://doi.org/10.1016/j.optlastec.2021.107177
Received 30 July 2020; Received in revised form 2 April 2021; Accepted 17 April 2021
Available online 14 May 2021
0030-3992/© 2021 Elsevier Ltd. All rights reserved.
D.D. Tu et al. Optics and Laser Technology 142 (2021) 107177

Fig. 1. The proposed mode converter, a) structure diagram, b) S-bent waveguide of the Ψ-junction coupler, and c) cross-section of the waveguide.

TE0 and mode TE1 [22]. However, the above mode conversion struc­
tures often come with large sizes over a few thousands of micrometers,
which are not suitable for on-chip applications.
On the other hand, mode conversions based on planar lightwave
circuits have been proposed, including tapered directional couplers
[23,24], micro-ring resonator [25], photonic crystal waveguides
[26,27], Y-junction waveguides [28], and multi-mode interference
(MMI) couplers [29–35]. Prominently, the devices using the MMI
coupler are very noticeable because they have outstanding advantages
such as simple configuration, compact size, wideband, and large
fabrication tolerance. They are also easily compatible with silicon
technology that is currently a low-cost device manufacturing technol­
ogy. For instance, mode converters from first mode TE0 to TE1 [34] or
TE2 [29] were realized using an MMI coupler with a butterfly shape
phase shifter. An MMI-based mode converter was also proposed for LP01
to LP11 mode conversion [35]. However, the above devices supported
only one pair of mode conversion, which limits capability for practical
use.
In this paper, we propose a design of mode converter based on
Silicon-on-Insulator (SOI) platform, arbitrarily converting modes TEi0

Fig. 2. Mode conversions of Ψ-junction coupler.

2
D.D. Tu et al.
Fig. 3. Effective refractive index as a function of the width of input waveguide for modes TE0 , TE1 and TE2 .
(TEi ) to TEj0 (TEj ) (i, j = 0, 1, 2). The converter is constructed by two
cascaded 3 × 3 MMI couplers and two Ψ-junction couplers at the input
and output.. . Despite using the 180-degree fixed phase shifter in the
simulation, we only present a proposal with a converter between arbi­
trary modes from TE0 to TE2 if the phase conditions are as specified.
Through simulations using a spatial three-dimension beam propagation
method (3D-BPM), we show that all nine possible mode conversion pairs
are successfully realized with high conversion efficiency and low
crosstalk in an 80 nm wideband.
2. Design and simulation
The structure of the mode converter is shown in Fig. 1. This mode
converter consists of two 3 × 3 MMI couplers and two Ψ-junction cou­
plers that are symmetrically placed together. The proposed device based
on SOI technology with core and cladding layers is made by Si and SiO2 ,
respectively. The refractive index of the core of Ncore = 3.47, while the
refractive index of the cladding of Nclad = 1.44 and the cover layer also
has the refractive index of Ncover = 1.44. The channel structure used to
create this mode converter with a height of H = 0.22 μm. Besides, a taper
placed between the access waveguides and MMI device to improve
transmission efficiency, with the length Ltp and width Wtp of 30 μm and
Fig. 4. The length Lb of the two outside branches of Ψ-junction as a function of epm .
3
Optics and Laser Technology 142 (2021) 107177
1.0 μm, respectively.
2.1. Ψ-junction coupler
Ψ-junction coupler is designed to convert TE1 and TE2 higher-order
modes into TE0 fundamental modes and vice versa. Fig. 2 illustrates
three cases of conversion as different order modes are transmitted to the
input waveguide of the Ψ-junction coupler. When mode TE2 is launched
into the central waveguide, it is converted to two modes TE0 . First, mode
TE0 enters port 1, and another mode TE0 enters port 3 with the same
amplitude and phase. Similarly, when we launch a mode TE1 into the
input center waveguide, then at the ports 1 and 3 of the Ψ-junction
coupler also receive the mode TE0 with equal amplitude, but their
phases reverse 180 degrees. For mode TE0 , the power of this mode enters
on port number 2 of Ψ-junction coupler. Because the Ψ-junction coupler
has symmetrical properties, so two modes TE0 are launched into two
ports 1, and 3 with the same amplitude and the in-phase (out-phase), a
mode TE2 (TE1 ) appears at the input waveguide. In the other case, if the
port 2 is put into a mode TE0 , then at the input of the Ψ-junction coupler
also get mode TE0 . We used a commercialized available design tool
based on Beam Propagation Method (BPM), which have been widely
used for the design and simulation of integrated and fiber-optic
D.D. Tu et al.
Fig. 5. Switching operations of 3 × 3 MMI coupler.
waveguide devices and circuits in previously reported works [37–41].
Fig. 3 shows the effective refractive index as a function of the width of
waveguides. Here, the width of input waveguide is chosen to be Win =
1.9 μm supported three modes TE0 , TE1 and TE2 . The width of straight
waveguide and two S-bent waveguides are set at Wc = 0.9 μm and w =
0.6 μm to support only one TE0 mode, respectively. The branch angle Φ
of S-bent waveguides is the critical parameter that makes the Ψ-junction
easy to convert higher-order modes to fundamental modes and less
crosstalk between the output branches. It depends on three parameters:
G, M, and Lb , as indicated in Fig. 1(b). Therein, G is the starting point of
the S-bent waveguide, and its endpoint coincides with the MMI coupler’s
input waveguides, M is the horizontal shift between the starting and
endpoint, and the length of the S-bent waveguide is Lb . Since M, G, and
endpoint of S-bent waveguide are fixed, the angle Φ depends mainly on
the length Lb and this length will be surveyed in the next part.
With the input field of the Ψ-junction coupler at position z = 0 in the
x-coordinate width direction is Qm (x, 0). This light field passes through
the primary waveguide of length L have the following form:
Qm (x, L) = Qm (x, 0)ejβm L
where βm is the constant propagation at the mode m − th (m = 0, 1, 2).
The field Qm (x,L) is split into sub-fields at the branches p − th (p = 1, 2, 3)
of the Ψ-junction coupler.
∑
3 LMMI =
Qm (x, L) = δpm qpm (x)
p=1
δpm and qpm are the field excitation coefficients and mode field distri­
bution of m − th mode at p − th output port, where δpm is estimated by
calculating overlap integrals.
∫
Qm (x, L)qpm (x)dx
δpm = √∫̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅̅ (3)
q2pm (x)dx
Based on the three-dimension beam propagation simulation method,
⃒ ⃒2
we investigate the power excitation coefficients epm = ⃒δpm ⃒ at output
branches of the Ψ-junction coupler for each mode m-th. The simulation
results in Fig. 4 show the relationship between the epm coefficients and
the length Lb of the curved waveguides of the Ψ-junction coupler. From
the simulation results demonstrate that with the Lb value greater than
200 μm, the conversion efficiency is highest from the higher-order
modes to the TE0 fundamental modes in the branches. In our design,
we choose the length of Lb = 200 μm to reduce the size of the device.
Optics and Laser Technology 142 (2021) 107177
2.2. 3×3 MMI Coupler
MMI coupler works based on the self-imaging mechanism in rect­
angular multi-mode interference waveguide. This phenomenon is stated
as follows: An input field is reproduced in a single image or multi-image
at periodic intervals when the input field spreads along with the MMI. A
parameter related to periodic intervals is called Lπ . The two modes with
the lowest order in the MMI region is defined as the beat length Lπ and
this beat length is given by [36]:
π 4nr W 2e
Lπ = ≈ (4)
β0 − β1 3λ0
with
λ0 ( )− 1
We = WM + n2r − n2c 2
(5)
π
where, the effective width of the MMI region, wavelength of signal, the
refractive index of the core and cladding layers are We , λ0 , nr and nc ,
(1) respectively. For waveguides with such high contrast, the width of the
MMI is approximately equal to the effective width We [36].
Based on the value of Lπ , we can determine the length of MMI by the
symmetric interference mechanism MMI.
3Lπ
(6)
8
(2)
From the above formulas, we calculate the length LMMI and the width
WMMI of 3 × 3 MMI region are 43.9 μm and 6.8 μm, respectively (Fig. 5).
The access waveguides are located at the positions ±WMMI /4 and the
center position of the MMI region, where the signal propagates with the
smallest attenuation. The operating principle of the MMI is summarized
as follows:
• When launching a mode TE0 with any phase into port I2 , we observe
two modes TE0 at two ports O1 and O3 of the 3 × 3 MMI with an
equal phase and amplitude.
• If two signals TE0 in the same phase and amplitude are simulta­
neously transmitted to the two input ports I1 and I3 of the MMI, they
are merged at the output O2 . Nevertheless, if these two signals TE0
are in the out of phase 180 degrees, they continue to go straight and
keep the phase difference at the external ports O1 or O3 of the device.
• If a mode TE0 transmitted to one of the two outer branches I1 or I3 of
the 3 × 3 MMI, all three output branches O1 , O2 and O3 receive
signals. However, the amplitude at the center branch O2 is twice the
amplitude of two outer branches O1 and O3 .
4
D.D. Tu et al. Optics and Laser Technology 142 (2021) 107177

Fig. 6. Phase shifting as a function of the length of the phase shifter.

phase shifter is added to the mode converter, this device can switch
Table 1
between the modes together. In practice, a phase shifter of an active
Setting of phase shifters for all nine mode-conversion pairs of the converter.
silicon photonic device is typically done either by the thermo-optic ef­
TEi to TEj Phase shifters ϕ = (PS1 , PS2 , PS3 ) fect [42] or the electro-optic effect [43]. The purpose of both of these
TE0 TE1 TE2 methods is to change the silicon material’s refractive index, thereby
changing the phase of the light signal passing through the waveguide.
(0, 0, 0) (0, π, 0) (0, π, π)
TE0
While the thermo-optic effect utilizes the temperature dependence of the
(0, π, 0) (0, 0, 0) (0, 0, π)
TE1
thermo-optic coefficient of silicon [44], the electro-optic effect uses the
(π, π, 0) (π, 0, 0) (0, 0, 0)
TE2
change in charge carriers’ concentration [45] to induce a change in the
refractive index. However, in this paper, we would like to emphasize the
idea of device mode conversion if phase values are satisfied. Thus, to
Here we use the first two properties of MMI to design the mode
make a simple phase shifter, we fix the width of the butterfly-shaped
converter. The third property is not discussed in this structure.
phase shifter Wps = 0.7 μm and measured the phase at the output of
the two waveguides. We calculate the difference between the two-phase
2.3. Phase shifter values and determine the length of Lps that satisfies the phase difference
between them by 180 degrees. From the simulation result shown in
When there is no phase shifter, the mode converter can only convert Fig. 6, at the length of Lps = 56.6 μm, the difference phase at the output
a few modes such as TE0 to TE0 , TE1 to TE1 and TE2 to TE2 . When the

Fig. 7. The electric field amplitude distribution for input mode TE0 to output mode TE0 (left), TE1 (middle) and TE2 (right).

5
D.D. Tu et al. Optics and Laser Technology 142 (2021) 107177

Fig. 8. The electric field amplitude distribution for input mode TE1 to output mode TE0 (left), TE1 (middle) and TE2 (right).

Fig. 9. The electric field amplitude distribution for input mode TE2 to output mode TE0 (left), TE1 (middle) and TE2 (right).

is 180 degrees when the signal is inserted into the phase shifter.
To convert between the modes TEi to TEj (i = j = 0, 1, 2), we must set
the 180-degrees phase shifters at the appropriate locations. We have
summarized the values that need to be set in the phase shifters presented
in Table 1.
To clarify the principle of mode conversion, we choose the case of
switching from TE0 to TE1 mode. According to the phase values of
Table 1, the values of the three Phase Shifters PS1 , PS2 , and PS3 are 0,
180, and 0 degrees, respectively. First, the TE0 mode signal at the
Ψ-junction input propagate directly into the middle waveguide. In this
case, the value of PS1 does not affect the signal in the central branch.
Next, from the first property of the MMI, this signal is divided into two
signals with equal amplitude and phase at O1 and O3 output ports of the
fist MMI. If the PS2 value is 180 degrees, these two signals are out of
phase 180 degrees at the input of the second MMI (the output of the first
MMI after go through the PS2 phase shifter). Based on the second
property of the MMI, these two signals continue to go straight at O1 and
O3 output ports of the second MMI and keep the phase difference 180
degrees between two signals. With the PS3 set to 0 degrees, these two
180-degree phase difference signals are synthesized into TE1 mode at
the output of the Ψ-junction coupler. Finally, we receive the TE1 signal
at the output when the TE0 signal is transmitted at the input of the mode
converter.
3. Performance evaluation and discussion
Three modes TE0 , TE1 and TE2 are transmitted at the wavelength of λ
= 1.55 μm at the input waveguide of the device. The simulation results
of conversion between modes based on spatial 3D-BPM simulation
method are shown in Figs. 7, 8 and 9. From these field-mode images, we

6
D.D. Tu et al. Optics and Laser Technology 142 (2021) 107177

Fig. 10. Mode conversion efficiency as a function of wavelength for the input mode TE0 , a) Insertion Loss when transmitting from mode TE0 to desirable mode TEj (j
= 0, 1, 2), b) Crosstalk of unwanted modes to desirable mode.

Fig. 11. Mode conversion efficiency as a function of wavelength for the input mode TE1 , a) Insertion Loss when transmitting from mode TE1 to desirable mode TEj (j
= 0, 1, 2), b) Crosstalk of unwanted modes to desirable mode.

Fig. 12. Mode conversion efficiency as a function of wavelength for the input mode TE2 , a) Insertion Loss when transmitting from mode TE2 to desirable mode TEj (j
= 0, 1, 2), b) Crosstalk of unwanted modes to desirable mode.

7
D.D. Tu et al. Optics and Laser Technology 142 (2021) 107177

Fig. 13. Investigate the effect of the power imbalance on mode conversion efficiency between ports 1 and 3 of MMI, a) Diagram evaluates the tolerance of Ψ-junction
coupler, b) Insertion Loss of desirable mode at output, c) Crosstalk of unwanted modes to desirable mode.

can visually see the converted modes exactly as in theory presented

Table 2
above. Besides, based on the energy distribution at the output of the
Design parameters for mode converter.
modes, it can be shown that the optical conversion efficiency is also very
high. Symbols Definition Value
(optimized)
However, to evaluate precisely the power attenuation and interfer­
ence between modes at the output of the device, we use two parameters: Ncore The refractive index of core 3.47
Insertion loss (IL) and Crosstalk (CT). The formula is given below: Nclad The refractive index of cladding 1.44
( ) Ncover The refractive index of cover 1.44
Pout− desirable
IL(dB) = 10log10 (7) H The standard height of structure 0.22 μm
Pin Ltp The length of taper waveguide 30.0 μm
( ) Wtp The width of taper waveguide 1.0 μm
ΣPout− unwanted The width of Ψ-junction input waveguide 1.9 μm
CT(dB) = 10log10 (8) Win
Pout− desirable Wc The width of Ψ-junction center output waveguide 0.9 μm
w The width of access waveguides 0.6 μm
where Pin is the input power of the modes TEi , Pout− desirable is the power of Lb The length of Ψ-junction output waveguide 200 μm
the desired mode TEj at the output, and Pout− unwanted is the power of other LMMI The length of MMI coupler 43.9 μm
unwanted modes TEj that have the same at the output of the mode WMMI The width of MMI coupler 6.8 μm
converter. Lps The length of fixed phase shifter 56.6 μm
From the simulation results indicated in Figs. 10–12, insertion loss is Wps The width of fixed phase shifter 0.7 μm
always less than 0.2 dB at the wavelength of 1.55 μm, and smaller than G The starting point of S-bent waveguide 0.65 μm
1.0 dB in the entire C band. Moreover, crosstalk is also less than − 20 dB M The horizontal shift between the starting and 1.05 μm
for all mode conversion cases. That means the appearance of unwanted endpoint of S bent
modes is low. Moreover, the simulation results also show that in the
range bandwidth of 70 nm, insertion loss also achieves a small value
rapidly below 1 dB, and the CT is larger than − 10 dB. This result
under 2.0 dB.
demonstrates that the unbalanced effect of the Ψ-junction branches has
In last part of this section, we investigate the fabrication tolerance of
less impact on the device’s mode conversion performance.. Table 2
the converter against the imbalance of the Ψ-junction coupler. This is
below shows the parameter values that are used to design the mode
because in practice, the fabrication of a Ψ-junction structure is often
converter. These parameters have been optimized for the best mode
more complicated than that of MMI. While the MMI structure is simple
switching performance.
and easy for fabrication with a broad tolerance, the Ψ-junction structure
is often susceptible to parameters such as branching angles, S-bent
4. Conclusion
waveguide radius or variation of the widths of the branching wave­
guides. These parameters can cause unequally power splitting into the
In this paper, we have successfully designed and simulated the mode
branches. To evaluate the unbalanced power impact on the output
converter based on two MMIs and two symmetric Ψ-junction coupler on
branches of the Ψ-junction component, we removed the input Ψ-junc­
a layered silicon-on-insulator substrate. While the Ψ-junction coupler
tion coupler, then launched two TE0 modes at different power levels to
converts the input high-order modes into the low-order modes TE0 in the
port 1 and port 3 of the first MMI (Fig. 13(a)). The width of the MMI’s
output branches, the MMI has the function of switching mode signals
input access waveguides is wide enough to support only one TE0 mode.
TE0 between the access waveguides. Through the spatial 3D-BPM
Thus, we use only TE0 mode to input into the MMI. In this case, we set
simulation method, we have shown that the device can arbitrarily
the phase with same values used in the three cases converting TE2 to TEj
convert between TEi and TEj (i, j = 0, 1, 2) by setting suitable phase
(j = 0, 1, 2) as shown in Table 1 to receive the desired modes TE0 , TE1 ,
values of the phase shifters. These results show that the device can
and TE2 at the output of the device. Figs. 13(b) and (c) show the
operate with high mode conversion efficiency in a broad bandwidth
insertion loss and crosstalk at the device’s output as functions of the
range up to 80 nm, which covers the entire C band and partially works in
power imbalance between MMI’s first and third input ports. The ob­
the S and L bands. Also, the device has large fabrication tolerance
tained results show that the device has a broad tolerance with a power
against the power imbalance between the Ψ-junction coupler branches.
change of about ±3 dB, with IL and CT smaller than 0.5 dB and − 15 dB,
respectively. The results remain well when the imbalance change from
±3 dB to ±6 dB. However, power ratio beyond ±6 dB, the IL decrease

8
D.D. Tu et al.
CRediT authorship contribution statement
Dao Duy Tu: Conceptualization, Methodology, Writing - original
draft. Ho Duc Tam Linh: Supervision, Writing - review & editing,
Project administration. Vuong Quang Phuoc: Validation, Software.
Dao Duy Thang: Formal analysis, Data curation. Truong Cao Dung:
Supervision. Nguyen Tan Hung: Supervision.
Declaration of Competing Interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influence
the work reported in this paper.
Acknowledgments
This research was supported by Fund for Science and Technology
Development of the University of Danang under project number B2020-
DN02-82. Work of Ho Duc Tam Linh was funded by Vingroup Joint
Stock Company and supported by the Domestic Master/PhD Scholarship
Programme of Vingroup Innovation Foundation (VINIF), Vingroup Big
Data Institute (VINBIGDATA), code VINIF.2020.TS.95.
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Dao Duy Tu was born in Lam Dong, Vietnam, in 1996. He received the B.E degree from
Hue University of Sciences, Hue, Vietnam, in 2019. He is currently working at SAVARTI
Company. His research interests include optical communications and networking, and
photonic integrated circuits.
Ho Duc Tam Linh was born in Hue, Vietnam, in 1986. He received the B.E. degree from
Hue University of Science, Hue, Vietnam in 2009, and the M.E. degree from Vietnam
National University-University of Engineering and Technology, Hanoi, Vietnam, in 2014.
He is currently pursuing a Ph.D. degree at The University of Danang-University of Science
and Technology, Danang, Vietnam. His research interests include optical communications
and networking, all-optical signal processing, and photonics integrated circuits.
Vuong Quang Phuoc was born in Hue, Vietnam, in 1990. He received a B.E. degree from
Hue University of Science, Hue, Vietnam in 2013, and an M.E. degree from the University
of Danang-University of Science and Technology, Danang, Vietnam in 2018. His research
interests include optical communications systems, networking, and artificial intelligence.
D.D. Tu et al.
Dao Duy Thang was born in Hanoi, Vietnam, in 1983. He received his B.S. and M.S.
degrees from Vietnam National University (VNU) in 2008 and 2011, respectively, and
obtained his Ph.D. degree from Nara Institute of Science and Technology (NAIST) in 2015.
After working at the National Institute for Materials Science (NIMS) in Japan as a NIMS
postdoctoral fellow and a JSPS postdoctoral fellow, he is currently a senior scientist at
Silicon Austria Labs GmbH (SAL). His research interests include nano-plasmonics, meta­
surfaces, integrated photonics and photonic MEMS sensors.
Truong Cao Dung was born in Thanh Hoa, Vietnam, in 1980. He received the B.E. and M.
E. and Ph.D. degrees from Hanoi University of Science and Technology, Hanoi, Vietnam, in
2003, 2006, and 2015, respectively. He is currently a Teacher in the Department of
Electronic Engineering, Posts and Telecommunications Institute of Technology, Hanoi,
Vietnam. His research interests include photonic integrated circuits, plasmonics, and op­
tical communication systems.
10
Optics and Laser Technology 142 (2021) 107177
Nguyen Tan Hung was born in Danang, Vietnam, in 1980. He received the B.E. degree
from The University of Danang-University of Science and Technology, Danang, Vietnam in
2003, and the M.E. and Ph.D. degrees from the University of Electro-Communications,
Tokyo, Japan, in 2009 and 2012, respectively. From 2012 to 2016, he was a Researcher
with the National Institute of Advanced Industrial Science and Technology, Tsukuba,
Japan, where he worked on ultrafast and spectrally efficient all-optical network technol­
ogies and developed an all-optical wavelength converter. He is currently a Teacher in the
Department of Electronics and Telecommunication Engineering, The University of
Danang-University of Science and Technology, Danang, Vietnam. His research interests
include optical communications and networking, all-optical signal processing, and pho­
tonics integrated circuits. Dr. Hung is a member of the IEEE Photonics Society.