Nuclear Instruments and Methods in Physics Research B 208 (2003) 21–26

www.elsevier.com/locate/nimb

LIGA process – micromachining technique using

synchrotron radiation lithography – and some
industrial applications
Yoshihiro Hirata *

Harima R&D Laboratories, Sumitomo Electric Industries, Ltd., 3-12-1 Kouto, Kamigori, Ako, Hyogo 678-1205, Japan

Abstract

We developed the LIGA (Lithographie or lithography/Galvanoformung or electroforming/Abformung or molding)

process using a compact synchrotron radiation (SR) source. To make a compact SR source applicable for the LIGA
process, we developed a highly sensitive resist and highly transparent mask for deep SR lithography. We commer-
cialized two devices, a piezoelectric composite and a microprobe for IC testing. A microconnector and optical switch
were also developed.
Ó 2003 Elsevier B.V. All rights reserved.

PACS: 07.10.C; 07.85.Q; 85.40.H

Keywords: LIGA; Synchrotron radiation (SR); Resist; Lithography; Piezoelectric composite; Contact probe

1. Introduction fabricated, and their accuracy (0.5 lm) is very

The trend forwards the downsizing of mechan-
ical parts is increasing in many fields. Although the
size of mechanical parts is small, maintaining their
mechanical stiffness is necessary. Therefore, the
thickness and the aspect ratio (height/width) of
the microcomponents are required to be high. The
LIGA process, which is composed of synchrotron
radiation (SR) lithography, electroforming and
molding, is one of the most promising microma-
chining techniques (see Fig. 1) [1–4]. By the LIGA
process, thick microcomponents (typically over
200 lm) with a high aspect ratio (over 10) can be
*
Tel.: +81-791-58-0659; fax: +81-791-58-0670.
E-mail address: hirata-yoshihiro@sei.co.jp (Y. Hirata).
high. SR whose peak wavelength is between 1 and
3A is used, so the diffraction is low and a structure
of fine width can be accurately fabricated. More-
over, the absorption is sufficiently low to pattern a
thick resist structure.
However, SR sources whose peak wavelength is
between 1 and 3 A  are too large (circumference of
50–100 m) for industrial application, and their
number is limited. On the other hand, the compact
SR source (circumference of under 20 m) is easily
accessible. However, the intensity of SR from a
compact SR source is less than 10% of that from
the SR sources normally used for the LIGA pro-
cess. Therefore, a sensitive resist must be devel-
oped.
Even if a large SR source is used, a sensitive
resist is also usable. Basically, in the LIGA process,

0168-583X/03/$ - see front matter Ó 2003 Elsevier B.V. All rights reserved.
doi:10.1016/S0168-583X(03)00632-3
22 Y. Hirata / Nucl. Instr. and Meth. in Phys. Res. B 208 (2003) 21–26
Fig. 1. Schematic view of the LIGA process.
mass production is realized by molding. Therefore,
the long SR exposure time has never been a serious
problem. However, the requirement for micro-
components, fabricated by SR lithography and
electroforming, is increasing. This is because the
metal parts are difficult to mass-produce using
molded polymer parts, and there is a limitation to
the size and aspect ratio that can be realized in the
molding process.
By using the developed LIGA process, we
commercialized two devices, a piezoelectric com-
posite and a microprobe for IC testing. A micro-
connector and optical switch were also developed.
2. SR lithography
2.1. Sensitive resist
Polymethyl methacrylate (PMMA) is usually
used as a resist for the LIGA process. The accu-
racy realized by PMMA (see Fig. 2) is very good,
but on the other hand, the sensitivity of 4 kJ/cm3 is
very low.
In general, the sensitivity of the SR resist for
ULSI fabrication is enhanced by increasing the
X-ray absorption or the chemical reaction yield
by means of a chain reaction. By the former
technique, a thick resist cannot be patterned, and
Fig. 2. Chemical formula of PMMA.
the precision of the resist structure becomes infe-
rior with the latter.
Therefore, the sensitivity must be enhanced by
increasing the chemical reaction yields of the base
resin. The degradation of the PMMA by X-ray is
initiated with the scission of the carbonyl group
(C@O) in the side chain from the main chain. As
the OCH3 group bound carbonyl group in PMMA
changed to the OH group which is a stronger
electron withdrawing group, the binding energy
between the main chain and the carbonyl group
decreased and the chemical reaction yield in-
creased. Therefore, the copolymer of methyl
methacrylate (MMA) and methacrylic acid
(MAA) (see Fig. 3) was considered to give higher
chemical reaction yields than PMMA.
We developed a co-polymer of MMA (95%)
and MAA (5%) resist [5]. Its G-value (radiation-
induced chemical yields per 100 eV of absorbed
 Y. Hirata / Nucl. Instr. and Meth. in Phys. Res. B 208 (2003) 21–26
C H3 C H3
( C H2 C )m ( C H2 C )
n and high accuracy (0.5 lm in 40  20 mm2 area).
C O C O
OCH 3 OH
Fig. 3. Chemical formula of P(MMA-co-MAA).
energy) was 3.3. The G-value of PMMA was re-
ported as 0.84, and therefore a higher chemical
reaction yield was confirmed [2]. By selecting me-
thyl isobutyl ketone (MiBK) as the developer, the
sensitivity of developed resist was 10 times higher
than that of PMMA. Thus, the exposure time by
compact SR is 1.5 h for the resist of 300 lm height
and 20 mm width. In addition, the gradient of the
side wall is very small, 1.6 mrad, and a precise
resist structure can be realized.
2.2. Mask for SR lithography
Fig. 4 shows the schematic view of the X-ray
mask [6]. To transmit SR whose wavelength is
between 1 and 3 A  efficiently, SiN of 2 lm thick-
ness is selected as a membrane. The SiN membrane
is deposited by chemical vapor deposition.
The absorber is made of amorphous WN and
the thickness is typically 5 lm, because contrast
over 200 is required for deep SR lithography. The
WN layer is sputtered. It is known that W films
deposited by sputtering have columnar structures
(with grain size of about 0.2 lm). It results in the
edge roughness of the absorber, thus we obtained
amorphous WN by adding nitrogen to the argon
sputtering gas and realized an edge roughness
under 0.1 lm. To suppress the side etching to less
than 0.1 lm during electron cyclotron resonance
etching by SF6 , the substrate was cooled to below
)40 °C.
Absorber:WN
Membrane:SiN
Frame:Si
Fig. 4. Schematic view of the X-ray mask.
23
Consequently, a resist pattern made by this X-
ray mask has smooth side walls (roughness: 30 nm)
3. Applications
3.1. Piezoelectric ceramics/polymer composite
Medical ultrasonic diagnosis has been widely
used because of its negligible influence on patients
and its ability for blood flow measurement and
real time measurements. To improve the resolu-
tion, the replacement of the transducer material
from piezoelectric ceramics such as lead zirconate
titanate (PZT) to 1–3 piezoelectric composites, as
shown in Fig. 5, is a promising idea. However, by
the conventional dice-and-fill method, it is im-
possible to fabricate PZT rods which are suffi-
ciently small to cause the composites to behave
like homogeneous materials.
We applied the LIGA process, and made pi-
ezoelectric composites for high-frequency appli-
cations industrially available for the first time [7].
The realized PZT rod size is 25 lm, which is one-
fourth of the size realized by conventional meth-
ods. Fig. 6 shows scanning electron microscope
(SEM) images of the PZT columnar array [8].
The pulse width was recognized to be one-third
shorter and the sensitivity was three times higher
than those of the PZT probe. This composite was
adapted to the commercially available endoscope
in 2001. The image became clearer, and the image
of a deeper region can now be obtained while
maintaining high resolution. Furthermore, the
frequency band is wider, which enables the selec-
tion of several frequencies using only one ultra-
sonic element; this contributes to the improvement
of the measurement performance of the probes.
Fig. 5. Schematic view of piezoelectric composite.
24 Y. Hirata / Nucl. Instr. and Meth. in Phys. Res. B 208 (2003) 21–26

normally 0.5–1 lm nickel crystals to 50 nm size

and by arranging crystal orientation to be in the
same direction, a material that is extremely high in
YoungÕs modulus and in elastic limit was realized.
Since the contact probe has an extremely minute
microstructure, material control at a nano level is
an issue of great importance.

3.3. Microconnectors

Microconnectors which require small insertion

force are developed. To realize a large positioning
Fig. 6. SEM image of the PZT columnar array (25 lm square, margin, the terminals and tapered guides are ar-
250 lm height). ranged cylindrically. These connectors are appli-
cable for the high density wiring of electronics
devices.
3.2. Microprobe for IC testing
We fabricated the terminals and guides using
SR lithography and electroforming to achieve high
The contact probe works by contacting to an IC
accuracy and a high aspect ratio. The cantilever
pad and then passing electrical test signals into and
terminals were fabricated using a sacrificial layer
out of the pad. As ICs become more integrated, IC
process. Fig. 8 shows the cantilever terminals and
pad pitches will become smaller, from 120–150 lm
guides. Tapered terminals and guides for smooth
to 90 lm or less, in the future. However, with
connection with the microconnectors were re-
conventional machining methods, the contact
quired. To realize them, structures made by SR
probe size cannot be made smaller.
lithography and electroforming were processed by
Using SR lithography and electroforming, a
microelectrodischarge machining. Fig. 9 shows the
contact probe that is sufficiently compact which
fabricated structures of tapered terminals and
can be used for narrow IC pad pitches and high-
guides [10]. For stable electrical contact under a
frequency ranges was developed. The contact
weak contact force (0.5 mN), the terminals are
probe is 30 lm square (see Fig. 7) [9]. The material
coated with 0.1 lm-thick electroplated Au. The
of the developed contact probe is an alloy of nickel
roughness of the Au surface is less than 30 nm
and manganese. This material can be used under a
(Ra).
maximum temperature of 150 °C. By miniaturizing

Fig. 8. SEM image of the female connector with cantilever

Fig. 7. SEM image of the microcontact probe. terminal.
 Y. Hirata / Nucl. Instr. and Meth. in Phys. Res. B 208 (2003) 21–26
Fig. 9. SEM image of the male connector with tapered termi-
nal.
The upper limit of current is 150 mA and the
breakdown voltage is 370 V (DC) at atmospheric
pressure in air. These connectors can be used over
1000 times.
3.4. Optical switch
As the information traffic volume is increased
dramatically, the optical network is expanding.
Many switches are required at the node, so the
switching system becomes larger and more ex-
pensive. It is a major bottleneck hindering the
growth of the information traffic volume. The
optical micromechanical switch is now recognized
as an effective solution to this problem. The size is
greatly reduced, and the switching speed becomes
faster when using the optical micromechanical
switch. Furthermore, the switches are made by a
batch process, and thus the array of switches can
be easily fabricated and the cost is expected to be
low.
We developed an optical switch composed of a
ribbon-like electrostatic actuator and the LIGA
mirror [11]. The ribbon-like actuator is curved
downward from the substrate by the induced stress
by electroforming. Fig. 10 shows the schematic
view of the switch unit and Fig. 11 shows the
switch.
A large mirror stroke (150 lm) and low driving
voltage (22 V) are achieved simultaneously. The
switching time is only 1.3 ms. The mirror surface is
very smooth and its vertical angle offset is less than
25
spacer
electrode cantilever Si substrate
platform LIGA
mirror
Fig. 10. Schematic view of the optical switch.
Fig. 11. SEM photograph of the optical switch. Cantilever
width: 150 lm; thickness: 5 lm; mirror height: 125 lm.
0.1°, therefore the reflection loss is very low ()0.41
dB at the wavelength of 1.55 lm). In addition, the
pitch can be narrower than that in the case of
other types of optical switches.
4. Conclusions
We developed SR lithography for a compact
SR source and applied it to the commer-
cialization of piezoelectric composite ultrasonic
transducers and a microprobe for IC testing. We
also developed a microconnector and an optical
switch.
We consider that one of the most important
points in order to realize the industrialization of
LIGA applications is the reduction of the process
cost, particularly for manufacturing metallic parts.
It is also important to reduce the cost for fabri-
cating a 3D structure. We are making efforts to
solve these problems in order to make many LIGA
applications available industrially.
26 Y. Hirata / Nucl. Instr. and Meth. in Phys. Res. B 208 (2003) 21–26

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