Chemical Physics Letters 778 (2021) 138825

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Chemical Physics Letters

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Research paper

An unexplored strategy for synthesis of ZnO nanowire films by

electrochemical anodization using an organic-based electrolyte.
Morphological and optical properties characterization
Alejandra Tello a, Andrés Boulett b, Julio Sánchez b, Guadalupe del C. Pizarro c, César Soto d,
Omar E. Linarez Pérez e, Ronald Sanhueza c, Diego P. Oyarzún a, *
a
Laboratorio de Nanotecnología, Energía y Sistemas Complejos, Facultad de Ciencias Naturales, Departamento de Química y Biología, Universidad de Atacama,
Copayapu 485, Copiapó, Chile
b
Universidad de Santiago de Chile (USACH), Facultad de Química y Biología, Departamento de Ciencias del Ambiente, Santiago, Chile
c
Laboratorio de Polímeros y Ciencia de los Materiales, Departamento de Química, Universidad Tecnológica Metropolitana, Avda. Las Palmeras 3360, Santiago, Chile
d
Departamento de Química Analítica e Inorgánica, Facultad de Ciencias Químicas, Edmundo Larenas 129, Universidad de Concepción, Concepción, Chile
e
Instituto de Investigaciones en Fisicoquímica de Córdoba (INFIQC), Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Haya de la Torre y Medina
Allende, 5000 Córdoba, Argentina

A R T I C L E I N F O A B S T R A C T

Keywords: In this work we report the preparation of ZnO nanowires by an unexplored strategy of electrochemical anod­
anodic ZnO ization using an electrolyte medium based mainly on ethylene glycol and fluoride ions, studying the anodization
Electrosynthesis as a function of parameters, such as: temperature and voltage. The results obtained by field emission scanning
Nano-needles
electron microscopy (FESEM) and transmission electron microscopy (TEM) show mainly a nanowire morphology
Optical properties
with an average length of 296 nm. Microscopic evidence demonstrate that the size of nanostructures,
morphology and homogeneity of resulting surfaces are completely related to the temperature and voltage con­
ditions used during the zinc anodization. The results obtained by Raman spectroscopy and X-ray diffraction
(XRD) corroborate the formation of only ZnO, with a crystallographic structure of hexagonal wurtzite. Finally,
through diffuse reflectivity spectroscopy, bandgap values of [3.19–3.22] eV were estimated, classifying it as a
material with potential characteristics for the fabrication of photoelectrodes for photoelectrochemical and
photocatalytic applications.

1. Introduction
Zinc oxide (ZnO) is classified as an n-type binary semiconductor
material due to the interstitial zinc and vacant oxygen atoms in its
crystal network, in addition to presenting at room temperature a direct
bandgap value of ~ 3.37 eV [1]. Crystallized ZnO has a hexagonal
wurtzite shape, with partially polar characteristics [2]. ZnO nano­
structures have several properties, such as transparency in the visible
light range, high electron mobility, low cost, biocompatibility, simple
synthesis, high surface area and high bandgap values [2,3]. Various
morphologies for ZnO nanostructures have been reported in the litera­
ture, including: nanowires, nanorods, nanorings, nanotubes, nano­
spheres, nanoflowers and nano-needles [4,5]. The nanowires are the
ones that draw attention above the other morphologies because they can
present an increase of the surface area, which optimizes their diverse
properties [6]. Precisely because of all these characteristics already
mentioned, ZnO nanostructures stand out over traditional nano­
structured semiconductors such as: SnO2, WO3, CuO, SiO2, GeO2 and
TiO2 [7-9]. Among these semiconductors, TiO2 is one of the most studied
nowadays, due to its large specific surface area, biocompatibility and
low cost, compared to the other traditional semiconductors. However,
ZnO presents certain advantages compared to TiO2, because it has
similar bandgap values and band edge positions, as well as higher
electron mobility than TiO2 [10]. For this reason, ZnO has attracted
considerable interest from the scientific community during the last
decade, where it has been studied or used in different areas and appli­
cations such as: photodetectors, photodiodes, solar cells, gas sensors,
supercapacitors, photocatalysis, optoelectronic devices, piezoelectrics,

* Corresponding author.
E-mail address: diego.oyarzun@uda.cl (D.P. Oyarzún).

https://doi.org/10.1016/j.cplett.2021.138825
Received 30 March 2021; Received in revised form 9 June 2021; Accepted 11 June 2021
Available online 13 June 2021
0009-2614/© 2021 Elsevier B.V. All rights reserved.
A. Tello et al.
batteries to store energy or hydrogen, in the field of medicine to obtain
biosensors capable of detecting biological molecules, such as glucose
and cholesterol in aqueous solutions [2,4,11,12].
There are reported different methods of synthesis of ZnO nano­
structures, such as electrodeposition [1], thermal evaporation [13],
chemical vapor deposition [14], thermal decomposition [15], sol–gel
processes [16] and electrochemical anodization [17]. However,
methods consisting of high temperatures difficult to control the
morphology of the synthesized oxide, which considerably affects their
photoelectrochemical and optical properties of semiconductor nano­
structures [18], while colloidal methods cause low adhesion of nano­
structures on a substrate, limiting their potentials applications in
electronic devices [18]. On the contrary, the electrochemical anodiza­
tion method is a simple, fast, low-cost and environmentally compatible
method [19], by which several morphologies of ZnO nanoparticles have
been obtained, for example: nanopores, nanoflakes, nanoflowers,
nanosheets and nanowire, obtained using various types of electrolytes
[20-35]. However, in no case it has been reported in the literature the
obtaining of ZnO nanowires by electrochemical anodization using an
electrolyte based on an organic medium, such as ethylene glycol and in
combination with fluoride (F-) ions [20-35]. On the other hand, previous
studies reported that these chemical conditions of the electrolyte benefit
the type of morphology, homogeneity and size of metal oxide nano­
structures obtained by electrochemical anodization, such as Cu2O
nanograins and TiO2 nanopores or nanotubes [19,36,37], classifying it
as a material with potential characteristics for obtaining photo­
electrodes with photoelectrochemical applications in the photo­
degradation of pollutants in aqueous media and photolysis of water
[21,28,32,33].
In this work, it is reported the synthesis of films with ZnO nanowires
obtained through electrochemical anodization of Zn, using an organic
support electrolyte (ethylene glycol), with the presence of F- ions and
studying parameters, such as applied voltage and synthesis temperature.
Also, the physicochemical and photoelectrochemical characterization of
ZnO nanowires was performed by FESEM and TEM microscopy, Raman
spectroscopy, XRD, diffuse reflectance spectrometry and j/E photocur­
rent profiles.
2. Materials and methods
The ZnO nanowires were obtained by electrochemical anodization of
Zn in an electrochemical cell composed of two electrodes. The anode
consisted of a 99.99% pure Zn (Sigma Aldrich) sheet, 0.25 mm thick and
1.0 cm2 of exposed area, mounted on a Teflon support. While as a
counter electrode was used a carbon sponge of 0.5 cm thick and 9.0 cm2
of exposed area. Prior to anodizing, the working electrode was me­
chanically polished on polishing pads, in conjunction with an aqueous
suspension of Al2O3 with a particle size of 0.05 μm. Subsequently, the
surface of the sheet was degreased by immersing it in an acetone/
ethanol solution in a 1:1 ratio and using an ultrasonic bath for 15 min.
After this time, the Zn sheet was rinsed with deionized water and dried
under a flow of N2.
The anodizing experiments were performed using a DYME 200 V/ 2
A power supply with DMMVIEW_C software, version 1.0. Voltages of 20,
30 and 40 V were applied for 3600 s at temperatures of 10 and 20 ◦ C.
The electrolyte solution was prepared using analytical grade reagents
and composed of 0.1 mol/L NaOH, 0.2 %w/v NH4F, 10 %v/v H2O and
80.5 %v/v C2H6O2. Anodization was performed with continuum
stirring.
The surface and morphological characteristics of the anodized ZnO
nanowires were obtained by FESEM and TEM microscopies using a Carl
Zeiss Σigma and LEO1420VP microscopes, respectively. For TEM mea­
surements, an aqueous dispersion of the nanowires was obtained by
sonication for 15 min. The analysis of the micrographs was made with
Gwyddion 2.53 software. The chemical characterization was carried out
by Raman spectroscopy using a Horiba LabRAM HR spectrometer with a
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Chemical Physics Letters 778 (2021) 138825
He/Ne laser (wavelength 632.8 nm) and XRD using a Bruker D8
Advance model with a Cu- radiation of Kα at 40 KV, 40 mA, λ = 1.54 Å
and a scanning range of 20◦ to 70◦ . The optical characterization was
done by diffuse reflectance spectrometry using a UV–Vis Lambda 35
spectrophotometer, Perkin Elmer. Finally, the photocurrent measure­
ments were performed with a three-electrode configuration using a 0.5
M K2SO4 electrolyte solution under an argon atmosphere. The electro­
chemical cell used was provided with an optical passage through a cir­
cular quartz window of 0.8 cm2 area. The sample was illuminated with
an ORIEL INSTRUMENTS 6263 Xenon lamp. The illumination power
was quantified with an ORIEL 70,260 radiant energy meter. Measure­
ments were recorded on an EG&G PRINCETON APPLIED RESEARCH
273-A Potentiostat/Galvanostat.
3. Results and discussion
3.1. ZnO nanostructures anodization
Fig. 1 shows the potentiostatic profiles (j/t) obtained during the
anodizing of Zn films. Three different stages of current as a function of
time are observed (Fig. 1a and b). First, a strong current increase, from
0 to ≤ 6.34 mA cm2, due to the active dissolution of the zinc substrate by
the effect of the voltage applied on the medium [18,19,33]. This current
increase is directly related to the applied voltage, obtaining the highest
values in the samples prepared at 40 V and the lowest in the samples
made at 20 V, since they contribute less energy to the system [18]. The
second stage consists of a rapid and significant decrease in current be­
tween 20 and 110 s in all potentiostatic profiles obtained (Fig. 1 a and b),
due to the fact that the anode surface is mostly covered by nano­
structures [34], also reaching minimum currents that are also directly
related to the amount of energy applied to the system [18]. The for­
mation of these nanostructures is generated by the continuous oxidation
of zinc by effect of the voltage applied (Eq. (1)) and the fluoride disso­
lution of the oxide (Eqs. (2) and (3)). [18,38]. The latter step is related to
the generation of surfaces with higher roughness than the initial ones
[18,19], caused by the partial chemical dissolution of the film previously
formed on the electrode surface due to the presence of fluoride ions in
the electrolyte medium to form highly soluble ZnF2 species (Ksp =
3.04x10-2) [18,39]. Then, the third anodization stage shows a current
evolution to a steady state value where a longitudinal ZnO crystal
growth by the chemical reprecipitation of the oxide due to the addition
interfacial alkalinization, takes place (Eq. (4)) [18].
Zn(s) + 2OH–(aq) → ZnO(s) + H2O + 2e- (1)
-
ZnO(s) + 2F (aq) + H2O → ZnF2(s) + 2OH (aq) –
(2)
2+ -
ZnF2(s) → Zn (aq) + 2F (aq) (3)
2+ –
Zn (aq) + 2OH (aq) → ZnO(s) + H2O (4)
3.2. FESEM microscopy of ZnO nanostructures
Fig. 2 shows the FESEM micrographs and nanostructure size histo­
grams of the samples anodized at 20 ◦ C (Fig. 2a, c, e and g) and at 10 ◦ C
(Fig. 2b, d, f and h) at various voltage values. It is observed that at 20 ◦ C,
homogeneous, highly rough surfaces are obtained at 40 and 20 V volt­
ages (Fig. 2a and e) and with low roughness at 30 V (Fig. 2c) due to the
type of morphology of the oxide formed. In specific the types of mor­
phologies obtained at voltages of 40, 30 and 20 V respectively are:
nanoflakes with average size values of approximately 160 nm (Fig. 2a),
nanowires with an average length of 383 nm (Fig. 2c and g), an average
width of approximately 61 nm (inset in Fig. 2c) and a surface similar to
that of a sponge (Fig. 2e). On the other hand, it is observed in FESEM
micrographs obtained by anodization at 10 ◦ C and at 40 and 20 V
A. Tello et al.
Fig. 1. Potentiostatic j/t profiles obtained during anodizing of Zn foils, using an electrolytic solution based on ethylene glycol and F- ions, at temperatures of 20 ◦ C
(a) and 10 ◦ C (b), applying voltages of: 40 V (blue line), 30 V (black line) and 20 V (red line), for 3600 s.
voltages (Fig. 2b and f), oxide surfaces with low roughness and irregu­
larity. On the other hand, the surface obtained at a voltage of 30 V also
shows low roughness, but being considerably more homogeneous than
those obtained in the other two conditions already mentioned (Fig. 2d).
Finally, the type of morphology obtained in all the anodization at 10 ◦ C
was of nanowires with an average length of 296 nm for the three voltage
values studied (Figure b, h, and insets in Fig. 2d,f).
3.3. TEM microscopy of ZnO nanowires
Through TEM micrographs, it was obtained a more detailed study of
the ZnO nanowires obtained at 10 ◦ C, with a voltage of 30 V and
dispersed in water for 15 min of sonication (Fig. 3a–f). In all the TEM
micrographs at clear field (Fig. 3a, c and e), nanowires with an average
length of approximately 500 nm and an average diameter of approxi­
mately 100 nm are observed, corroborating the information obtained by
FESEM. While with the dark field TEM micrographs it was proved that
the dark morphologies observed in light field effectively correspond to
the anodized ZnO nanowires in the dimensions already mentioned
(Fig. 3b, d and f) [1]. Also, nanostructures with sizes < 100 nm are
observed, corresponding to pieces of nanowires that were fractured
during the ultrasound treatment [1]. These results indicate that the
anodized ZnO nanowires in these experimental conditions can be
dispersed in water by a simple and fast method, as sonication, which
does not affect the morphology or dimensions of most of the ZnO
nanowires [1].
3.4. Raman and XDR of ZnO nanowires
Fig. 4a shows the Raman spectra of the ZnO nanowires obtained by
electrochemical anodization at 10 ◦ C. In each of the obtained spectra,
signals are observed at approximately 435 cm− 1, 574 cm− 1 and 1089
cm− 1 respectively. Based on the previously reported for ZnO nanowires,
the signal at 1089 cm− 1 is attributed to a multiphoton resonance process
in the nanometer-sized ZnO structure [40]. Whereas the signal at 574
cm− 1 is due to a defect in the crystal structure of the oxide, caused by the
vacancy of interstitial oxygen atoms [24,34,40]. On the other hand, the
signal at 435 cm− 1 is attributed to the presence of the hexagonal wurt­
zite structure in the obtained oxide and to the non-polar vibrational
mode of an oxygen atom [40]. However, this type of crystal structure
must be posteriorly corroborated by XRD.
The XRD pattern of ZnO nanowires obtained by electrochemical
anodization is shown in Fig. 4b. This measurement was performed to
study the chemical composition and crystallinity of the synthesized
nanostructures. Diffraction signals were determined between 2θ = 20◦ −
70◦ , obtaining the following signals at 2θ = 31.662◦ , 34.322◦ , 36,175◦ ,
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Chemical Physics Letters 778 (2021) 138825
47.462◦ , 54.722◦ , 62.822◦ and 67.755◦ , corresponding to the respective
crystallographic planes of ZnO nanowires with a hexagonal wurtzite
crystalline phase, such as (1 0 0), (0 0 2), (1 0 1), (1 0 2), (0 1 3), (1 1 0) and
(1 1 2) (JCPDS, 80–0075) [33]. The higher intensity of the (0 0 2) plane
indicates greater crystallinity of the nanostructures and furthermore, a
tendency for perpendicular to the substrate surface growth of hexagonal
wurtzite crystallites [41]. This information obtained by XRD corrobo­
rates the crystalline phase characteristics and morphology of the ZnO
nanowires previously elucidated by Raman spectroscopy and by FESEM
and TEM microscopy.
3.5. Bandgap estimation of ZnO nanowires
Fig. 5 shows the optical behavior of the nanowires obtained by
electrochemical anodization at 10 ◦ C and at various voltage values. In
the diffuse reflectance spectrum (Fig. 5a), a reflectivity edge is observed
for the three samples analyzed from approximately 310 nm to 350 nm.
This is generated due to the reflectance of photons that do not have the
necessary energy to interact with atoms or electrons [42], in addition to
structural defects caused by oxygen or zinc vacancy in ZnO [5].
Although, a reflectance edge at longer wavelength than that obtained in
this research has been reported in the scientific literature, this decrease
has been attributed to increased quantum confinement of the ZnO
nanowires [5,13,42]. The estimation of the bandgap values of ZnO
nanostructures with a direct band separation can be calculated using the
Kubelka-Munk function and the Tauc Plot ratio (equation (5) and (6)
respectively) [5,6], extrapolating to the x-axis the slope obtained by a
ratio (F(R) × hν)n versus hν [5,6].
(1 − R)2
F(R) = (5)
2R
hv = (F(R)xhv)n (6)
Where, R is the reflectance in absolute values of the analyzed sample,
ν is the frequency of a photon, h is the Planck constant y and n has values
of 1 for indirect band transition semiconductors or 0.5 for direct band
transition semiconductors, such as ZnO [5,6]. The estimated values of
bandgap of ZnO wires obtained at 40 V, 30 V and 20 V are 3.17 eV, 3.19
eV and 3.22 eV, respectively (Fig. 5b), this slight decrease in bandgap
values as the voltage increases can be attributed to a quantum
confinement effect in the nanowires [43].
In the scientific literature, it has been reported to obtain several ZnO
nanostructures with bandgap values between 3.10 and 3.87 eV, syn­
thesized using different electrolytic media, but in no case, they have
been obtained using an electrolytic medium based on ethylene glycol
and F- ions (see Table 1) [20-35]. In this context, Ramirez-Canon et al.
A. Tello et al. Chemical Physics Letters 778 (2021) 138825

Fig. 2. FESEM micrographs of the surface of zinc foils (a-f) and histograms of the length (g and h) of anodized ZnO nanostructures in an electrolytic solution based on
ethylene glycol and F- ions. At temperatures of 20 ◦ C (a, c, e and g) and 10 ◦ C (b, d, f and h), applying voltages of: 40 V (a and b), 30 V (c,d,g and h) and 20 V (e and f),
during 3600 s.

have reported obtaining ZnO nanowires by anodization, with a bandgap
value of 3.5 eV, using an electrolytic medium of C2H5OH + KHCO3 [26].
While Mateen et al. and Alsultany et al. have reported obtaining ZnO
nanowires, using a KHCO3 based electrolytic medium, with bandgap
values of 3.19 and 3.27 eV respectively, also by electrochemical anod­
ization [13,33]. Therefore, our bandgap values obtained are very close
to the lower limit of the range reported in the scientific literature (Eg >
3.19 eV) for ZnO nanowires obtained by electrochemical anodization of
a zinc film, using several electrolytic media (Table 1) [24,26,30-35].
3.6. Photocurrent density of the ZnO nanowires
Fig. 6 shows the photocurrent profile j/E corresponding to ZnO
nanowires anodized at 10 ◦ C, with a voltage of 30 V, for 3600 s and

4
A. Tello et al.
Fig. 3. TEM micrographs light field (a,c and e) and dark field (b,d and f) of anodized ZnO nanowires in an electrolyte solution based on ethylene glycol and F- ions, at
a temperature of 10 ◦ C, with a voltage of 30 V and for 3600 s.
obtained with or without the presence of continuous illumination. A
maximum photocurrent density of 436 µA cm− 2 is observed for the ZnO
nanowires without illumination (see Fig. 6, black line), while in the
presence of continuous illumination the photocurrent density increases
considerably to a maximum value of 1698 µA cm− 2 (see Fig. 6, red line).
This increase of the photocurrent density in the curve is attributed to a
higher separation effectiveness of the charge carriers and lower energy
losses, due to the fact that when the ZnO nanowires are illuminated,
photoholes are created by electron excitation from the valence to the
conductive semiconductor bands, these are driven to the interface be­
tween the working electrode and the electrolyte, being finally trans­
ferred to the electrolyte solution [43]. In addition, it has been previously
reported in the literature that for ZnO nanowires the oxygen vacancies
are mainly in the vicinity of the surfaces and that irradiation with light
energy causes weakly bound oxygens to be desorbed from the surface at
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Chemical Physics Letters 778 (2021) 138825
a higher rate than without light irradiation. This generates a reduction of
the electron depletion region of the surface, which in turn results in
higher photoconductivity [44].
Based on the results presented in this research, the obtained ZnO
nanowires can be classified as a material with potential characteristics
for obtaining photoelectrodes that can be used in various applications,
such as: photoelectrochemical, photocatalytic, degradation of pollutants
in aqueous media and in water photolysis [21,28,32,33].
4. Conclusions
The results obtained in this work inform the obtaining of ZnO
nanostructures by means of electrochemical anodization using an elec­
trolyte based mainly on ethylene glycol and F- ions. The homogeneity
and morphology of the nanostructures vary depending on the synthesis
A. Tello et al. Chemical Physics Letters 778 (2021) 138825

Fig. 4. a) Raman spectra of ZnO nanowires obtained by electrochemical anodization in an electrolytic solution based on ethylene glycol and F- ions, at a temperature
of 10 ◦ C, with voltages of: 40 V (blue line), 30 V (black line) and 20 V (red line), for 3600 s. b) XRD diffraction pattern of synthesized ZnO nanowires using the same
electrolytic solution at 10 ◦ C, with a voltage of 30 V, for 3600 s.

Fig. 5. a) Diffuse reflectance spectrum and b) bandgap estimation by the Kubelka-Munk method of anodized ZnO nanowires in an electrolytic solution based on
ethylene glycol and F- ions, at a temperature of 10 ◦ C, with voltages of: 40 V (blue line), 30 V (black line) and 20 V (red line), for 3600 s.

Table 1
Morphologies and Band gap of ZnO nanostructures reported in the literature,
obtained by electrochemical anodization using various types of electrolytes.
Electrolyte (aqueous solution) Morphology Band gap References
(eV)

NaOH + NH4F + H2O + C2H6O2 Nanowire [3.19–3.22] Present

study
H2O, NaOH, H2C2O4 or CH3OH + Nanoporous [3.10–3.87] [20-24]
HF
C2H5OH + H2SO4, C2H5OH + Nanoflakes — [25-28]
H3PO4, (NH4)2SO4 or (NH4)2SO4
+ NaOH
NaOH, C2H5OH + NaOH, C2H5OH Nanoflowers ~3.50 [24,26,27]
+ H2C2O4, CH3OH + HCl,
C2H5OH + HNO3 or C2H5OH +
HF
(NH4)2SO4 or (NH4)2SO4 + NH4Cl Nanosheets — [29]
KHCO3, NaHCO3, NH4CO3, NH4F, Nanowire [3.19–3.50] [24,26,30-
C2H5OH + KHCO3, CH3OH + HF 35]
or HF
Fig. 6. Photocurrent profile j / E for ZnO nanowires anodized at 10 ◦ C, with a
voltage of 30 V, for 3600 s and obtained with or without the presence of
continuous illumination.

6
A. Tello et al.
conditions, where at low temperatures (10 ◦ C) it is promoted the
obtaining of nanowires with an average length of 296 nm according to
FESEM and TEM microscopy, with a chemical composition of only ZnO
and a hexagonal wurtzite crystal structure according to Raman and XRD
spectroscopy. In addition, bandgap values of [3.19–3.22] eV were esti­
mated by diffuse reflectivity spectroscopy, which are slightly lower or
equal to the lower limit of the range reported in scientific literature (Eg
> 3.19 eV) for ZnO nanowires obtained by electrochemical anodization.
It is also observed an increase in its photocurrent density under illumi­
nation, classifying it as a material with potential characteristics for
obtaining photoelectrodes with photoelectrochemical, photocatalytic
and water photolysis applications.
CRediT authorship contribution statement
Alejandra Tello: Methodology, Data curation. Andrés Boulett:
Software, Validation. Julio Sánchez: Visualization, Investigation.
Guadalupe del C. Pizarro: Supervision. César Soto: Validation, Visu­
alization. Omar E. Linarez Pérez: Data curation, Writing - original
draft. Ronald Sanhueza: Methodology, Data curation. Diego P. Oyar­
zún: Writing - review & editing.
Declaration of Competing Interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influence
the work reported in this paper.
Acknowledgements
We thank Fondecyt project 1191336 and the financial support by the
Fund for Scientific and Technological Equipment, year 2019, code LE19-
01, Universidad Tecnológica Metropolitana. DPO thanks the financial
support from PAI77200065 project OELP thank FESEM microscopy fa­
cilities at LAMARX, FAMAF-UNC/CONICET, Sistema Nacional de
Microscopía-MINCyT, are gratefully acknowledged. RAMAN equipment
at LANN, INFIQC-UNC/CONICET.
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